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TPH6R30ANL,L1Q

TPH6R30ANL,L1Q Toshiba Semiconductor and Storage

TPH6R30ANL_datasheet_en_20191018.pdf?did=53698&prodName=TPH6R30ANL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 66A/45A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 4946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
13+ 1.46 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.78 EUR
2000+ 0.74 EUR
Mindestbestellmenge: 10
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Technische Details TPH6R30ANL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 66A/45A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V.

Weitere Produktangebote TPH6R30ANL,L1Q nach Preis ab 0.71 EUR bis 1.81 EUR

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TPH6R30ANL,L1Q TPH6R30ANL,L1Q Hersteller : Toshiba TPH6R30ANL_datasheet_en_20191018-1114623.pdf MOSFET U-MOSVIII-H 100V 66A 55nC MOSFET
auf Bestellung 12129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.81 EUR
10+ 1.49 EUR
100+ 1.16 EUR
500+ 0.98 EUR
1000+ 0.75 EUR
5000+ 0.71 EUR
Mindestbestellmenge: 2
TPH6R30ANL,L1Q TPH6R30ANL,L1Q Hersteller : Toshiba Semiconductor and Storage TPH6R30ANL_datasheet_en_20191018.pdf?did=53698&prodName=TPH6R30ANL Description: MOSFET N-CH 100V 66A/45A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
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