auf Bestellung 5000 Stücke:
Lieferzeit 170-174 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.34 EUR |
10+ | 1.2 EUR |
100+ | 0.82 EUR |
500+ | 0.68 EUR |
1000+ | 0.58 EUR |
2500+ | 0.53 EUR |
5000+ | 0.49 EUR |
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Technische Details TPH8R808QM,LQ Toshiba
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V, Power Dissipation (Max): 3W (Ta), 109W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 300µA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V.
Weitere Produktangebote TPH8R808QM,LQ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TPH8R808QM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 109W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V |
Produkt ist nicht verfügbar |
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TPH8R808QM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 109W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V |
Produkt ist nicht verfügbar |