auf Bestellung 2584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.34 EUR |
10+ | 1.18 EUR |
100+ | 0.8 EUR |
500+ | 0.67 EUR |
1000+ | 0.57 EUR |
2500+ | 0.52 EUR |
5000+ | 0.46 EUR |
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Technische Details TPN1200APL,L1Q Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V, Power Dissipation (Max): 630mW (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V.
Weitere Produktangebote TPN1200APL,L1Q nach Preis ab 0.51 EUR bis 1.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TPN1200APL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TSO Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Power Dissipation (Max): 630mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V |
auf Bestellung 5369 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN1200APL,L1Q | Hersteller : Toshiba | Trans MOSFET N-CH Si 100V 66A 8-Pin TSON EP Advance T/R |
Produkt ist nicht verfügbar |
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TPN1200APL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TSO Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Power Dissipation (Max): 630mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V |
Produkt ist nicht verfügbar |