auf Bestellung 31614 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.41 EUR |
10+ | 1.16 EUR |
100+ | 0.9 EUR |
500+ | 0.76 EUR |
1000+ | 0.62 EUR |
3000+ | 0.56 EUR |
6000+ | 0.55 EUR |
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Technische Details TPN3300ANH,LQ Toshiba
Description: MOSFET N-CH 100V 9.4A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V, Power Dissipation (Max): 700mW (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-TSON Advance (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V.
Weitere Produktangebote TPN3300ANH,LQ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
TPN3300ANH,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 9.4A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN3300ANH,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 9.4A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
auf Bestellung 13558 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN3300ANH,LQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R |
Produkt ist nicht verfügbar |
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TPN3300ANH,LQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R |
Produkt ist nicht verfügbar |
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TPN3300ANH,LQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 100V 21A 8-Pin TSON Advance T/R |
Produkt ist nicht verfügbar |