TPN4R806PL,L1Q Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 72A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.54 EUR |
| 10000+ | 0.53 EUR |
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Technische Details TPN4R806PL,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V, Power Dissipation (Max): 630mW (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V.
Weitere Produktangebote TPN4R806PL,L1Q nach Preis ab 0.55 EUR bis 1.37 EUR
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TPN4R806PL,L1Q | Hersteller : Toshiba |
MOSFET TRANS POWER MOSFET |
auf Bestellung 4383 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN4R806PL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 72A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V Power Dissipation (Max): 630mW (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V |
auf Bestellung 12779 Stücke: Lieferzeit 10-14 Tag (e) |
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