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TPN7R504PL,LQ

TPN7R504PL,LQ Toshiba

TPN7R504PL_datasheet_en_20170413-1568630.pdf Hersteller: Toshiba
MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 8049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.95 EUR
10+ 0.83 EUR
100+ 0.58 EUR
500+ 0.48 EUR
1000+ 0.41 EUR
3000+ 0.36 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 3
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Technische Details TPN7R504PL,LQ Toshiba

Description: MOSFET N-CH 40V 38A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V, Power Dissipation (Max): 610mW (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V.

Weitere Produktangebote TPN7R504PL,LQ nach Preis ab 0.54 EUR bis 1 EUR

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TPN7R504PL,LQ TPN7R504PL,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=55436&prodName=TPN7R504PL Description: MOSFET N-CH 40V 38A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
auf Bestellung 612 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
20+ 0.89 EUR
100+ 0.68 EUR
500+ 0.54 EUR
Mindestbestellmenge: 18
TPN7R504PL,LQ TPN7R504PL,LQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=55436&prodName=TPN7R504PL Description: MOSFET N-CH 40V 38A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
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