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| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 23.6 EUR |
| 10+ | 20.8 EUR |
| 30+ | 20.24 EUR |
| 60+ | 19.1 EUR |
| 120+ | 17.97 EUR |
| 270+ | 17.42 EUR |
| 510+ | 16.28 EUR |
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Technische Details TW048Z65C,S1F Toshiba
Description: G3 650V SIC-MOSFET TO-247-4L 48, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.6mA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V.
Weitere Produktangebote TW048Z65C,S1F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| TW048Z65C,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: G3 650V SIC-MOSFET TO-247-4L 48Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.6mA Supplier Device Package: TO-247-4L(X) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V |
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