auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 20.13 EUR |
| 10+ | 17.74 EUR |
| 30+ | 16.88 EUR |
| 60+ | 16.47 EUR |
| 120+ | 16.14 EUR |
| 510+ | 15.82 EUR |
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Technische Details TW083N65C,S1F Toshiba
Description: G3 650V SIC-MOSFET TO-247 83MOH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 5V @ 600µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V.
Weitere Produktangebote TW083N65C,S1F nach Preis ab 16.5 EUR bis 21.65 EUR
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TW083N65C,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: G3 650V SIC-MOSFET TO-247 83MOHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 5V @ 600µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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