auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 11.6 EUR |
| 16+ | 9.9 EUR |
| 30+ | 8.34 EUR |
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Technische Details TW107Z65C,S1F Toshiba
Description: G3 650V SIC-MOSFET TO-247-4L 10, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Power Dissipation (Max): 76W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.2mA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V, Rds On (Max) @ Id, Vgs: 152mOhm @ 10A, 18V.
Weitere Produktangebote TW107Z65C,S1F nach Preis ab 8.11 EUR bis 14.33 EUR
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TW107Z65C,S1F | Hersteller : Toshiba |
 Trans MOSFET N-CH SiC 650V 20A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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TW107Z65C,S1F | Hersteller : Toshiba |
MOSFET G3 650V SiC-MOSFET TO-247-4L 107mohm |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| TW107Z65C,S1F | Hersteller : Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247-4L 10 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.2mA Supplier Device Package: TO-247-4L(X) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Rds On (Max) @ Id, Vgs: 152mOhm @ 10A, 18V |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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