UES1106SM-1 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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Technische Details UES1106SM-1 Microchip Technology
Description: DIODE GEN PURP 400V 2A A SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: A, SQ-MELF, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Weitere Produktangebote UES1106SM-1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| UES1106SM-1 | Hersteller : Microchip Technology | Rectifiers UFR,FRR _ A-Body Sq. Melf |
Produkt ist nicht verfügbar |