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UF3SC065040B7S

UF3SC065040B7S Qorvo

da008649 Hersteller: Qorvo
Description: 650V/40MOHM, SIC, STACKED FAST C
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+12.07 EUR
Mindestbestellmenge: 800
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Technische Details UF3SC065040B7S Qorvo

Description: 650V/40MOHM, SIC, STACKED FAST C, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.

Weitere Produktangebote UF3SC065040B7S nach Preis ab 12.07 EUR bis 22.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
UF3SC065040B7S UF3SC065040B7S Hersteller : Qorvo da008649 Description: 650V/40MOHM, SIC, STACKED FAST C
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 8464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.4 EUR
10+ 12.68 EUR
100+ 12.07 EUR
Mindestbestellmenge: 2
UF3SC065040B7S UF3SC065040B7S Hersteller : Qorvo UF3SC065040B7S_Data_Sheet-3177163.pdf MOSFET 650V/40mOhms,SICFET,G3,TO263-7
auf Bestellung 947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22.72 EUR
25+ 20.05 EUR
100+ 17.37 EUR
250+ 14.71 EUR
500+ 13.94 EUR
2400+ 13.64 EUR
4800+ 13.25 EUR
UF3SC065040B7S UF3SC065040B7S Hersteller : UNITEDSIC 3971369.pdf Description: UNITEDSIC - UF3SC065040B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 43 A, 650 V, 42 mohm, D2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 43A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 195W
Bauform - Transistor: D2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: PW Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.042ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)