UF3SC120016K3S Qorvo
Hersteller: Qorvo
Description: SICFET N-CH 1200V 107A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
Description: SICFET N-CH 1200V 107A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
auf Bestellung 1589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 80.2 EUR |
30+ | 67.21 EUR |
120+ | 62.73 EUR |
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Technische Details UF3SC120016K3S Qorvo
Description: SICFET N-CH 1200V 107A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 107A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V.
Weitere Produktangebote UF3SC120016K3S nach Preis ab 70.52 EUR bis 99.23 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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UF3SC120016K3S | Hersteller : Qorvo | MOSFET 1200V/16mO,SICFET,G3,TO247-3 |
auf Bestellung 281 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC120016K3S | Hersteller : Qorvo / UnitedSiC | MOSFET 1200V/16mOhm, SiC, N-OFF STACKED CASCODE, G3 FAST, TO-247-3L |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC120016K3S | Hersteller : UNITEDSIC |
Description: UNITEDSIC - UF3SC120016K3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 107 A, 1.2 kV, 0.016 ohm, TO-247 Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 107 Verlustleistung Pd: 517 Gate-Source-Schwellenspannung, max.: 4.7 MOSFET-Modul-Konfiguration: Eins Verlustleistung: 517 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.016 Rds(on)-Prüfspannung: 12 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.016 SVHC: No SVHC (17-Jan-2022) |
auf Bestellung 466 Stücke: Lieferzeit 14-21 Tag (e) |