UPTB8e3/TR13 Microchip Technology
Hersteller: Microchip TechnologyDescription: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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Technische Details UPTB8e3/TR13 Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 10.9A, Voltage - Reverse Standoff (Typ): 8V, Supplier Device Package: Powermite 1 (DO216-AA), Bidirectional Channels: 1, Voltage - Breakdown (Min): 9V, Voltage - Clamping (Max) @ Ipp: 13.7V, Power - Peak Pulse: 1000W (1kW), Power Line Protection: No.
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Verfügbarkeit |
Preis ohne MwSt |
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UPTB8e3/TR13 | Hersteller : Microsemi |
ESD Suppressors / TVS Diodes Transient Voltage Suppressor |
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