US5U35TR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 700MA TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 700mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: MOSFET P-CH 45V 700MA TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 700mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.18 EUR |
18+ | 1.03 EUR |
100+ | 0.71 EUR |
500+ | 0.59 EUR |
1000+ | 0.51 EUR |
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Technische Details US5U35TR Rohm Semiconductor
Description: MOSFET P-CH 45V 700MA TUMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 800mOhm @ 700mA, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TUMT5, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V.
Weitere Produktangebote US5U35TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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US5U35TR | Hersteller : ROHM Semiconductor | MOSFET P Chan-45V+/-0.7A 4V Drive |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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US5U35TR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 45V 700MA TUMT5 Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 700mA, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT5 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
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