VN0104N3-G

VN0104N3-G Microchip Technology


VN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005975A.pdf Hersteller: Microchip Technology
MOSFET 40V 3Ohm
auf Bestellung 12097 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.08 EUR
10+ 1.07 EUR
25+ 0.86 EUR
100+ 0.83 EUR
250+ 0.82 EUR
500+ 0.8 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 3
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Technische Details VN0104N3-G Microchip Technology

Description: MOSFET N-CH 40V 350MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V.

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VN0104N3-G VN0104N3-G Hersteller : Microchip Technology VN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005975A.pdf Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.25 EUR
25+ 1.03 EUR
100+ 0.95 EUR
Mindestbestellmenge: 15
VN0104N3-G VN0104N3-G Hersteller : MICROCHIP TECHNOLOGY vn0104.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 350mA; Idm: 2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 0.35A
Pulsed drain current: 2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
VN0104N3-G VN0104N3-G Hersteller : MICROCHIP TECHNOLOGY vn0104.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 350mA; Idm: 2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 0.35A
Pulsed drain current: 2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Produkt ist nicht verfügbar