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VSS8D5M10-M3/I

VSS8D5M10-M3/I Vishay General Semiconductor - Diodes Division

vss8d5m10.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 100V 2.3A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
auf Bestellung 8005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
32+ 0.55 EUR
100+ 0.39 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
2000+ 0.22 EUR
5000+ 0.21 EUR
Mindestbestellmenge: 28
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Technische Details VSS8D5M10-M3/I Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTT 100V 2.3A SLIMSMAW, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 480pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.3A, Supplier Device Package: SlimSMAW (DO-221AD), Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 400 µA @ 100 V.

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VSS8D5M10-M3/I VSS8D5M10-M3/I Hersteller : Vishay General Semiconductor - Diodes Division vss8d5m10.pdf Description: DIODE SCHOTT 100V 2.3A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
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