WMB032N04LG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 360A; 44.6W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 360A
Power dissipation: 44.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 20ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 360A; 44.6W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 360A
Power dissipation: 44.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 20ns
Anzahl je Verpackung: 1 Stücke
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Technische Details WMB032N04LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 360A; 44.6W; PDFN56, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 57A, Pulsed drain current: 360A, Power dissipation: 44.6W, Case: PDFN56, Gate-source voltage: ±20V, On-state resistance: 5.2mΩ, Mounting: SMD, Gate charge: 17.5nC, Kind of package: reel; tape, Kind of channel: enhanced, Reverse recovery time: 20ns, Anzahl je Verpackung: 1 Stücke.
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WMB032N04LG2 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 360A; 44.6W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 57A Pulsed drain current: 360A Power dissipation: 44.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 20ns |
Produkt ist nicht verfügbar |