WMJ90R260S WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W, Mounting: THT, Drain-source voltage: 900V, Drain current: 10A, On-state resistance: 0.26Ω, Type of transistor: N-MOSFET, Power dissipation: 310W, Polarisation: unipolar, Kind of package: tube, Gate charge: 39.5nC, Technology: WMOS™ S, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 50A, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.