WMJ90R500S WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; Idm: 40A; 138W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 138W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; Idm: 40A; 138W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 138W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details WMJ90R500S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; Idm: 40A; 138W, Type of transistor: N-MOSFET, Technology: WMOS™ S, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 6A, Pulsed drain current: 40A, Power dissipation: 138W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.5Ω, Mounting: THT, Gate charge: 25nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMJ90R500S
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WMJ90R500S | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; Idm: 40A; 138W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 40A Power dissipation: 138W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |