WMK16N60FD WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
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Technische Details WMK16N60FD WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3, Type of transistor: N-MOSFET, Technology: WMOS™ FD, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 13A, Power dissipation: 86W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 0.32Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, Heatsink thickness: 1.2...1.45mm, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMK16N60FD
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WMK16N60FD | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.2...1.45mm |
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