Produkte > WAYON > WMN12N80M3
WMN12N80M3

WMN12N80M3 WAYON


WMx12N80M3.pdf Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
On-state resistance: 620mΩ
Drain current: 12A
Drain-source voltage: 800V
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details WMN12N80M3 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO262, Case: TO262, Mounting: THT, Kind of package: tube, On-state resistance: 620mΩ, Drain current: 12A, Drain-source voltage: 800V, Power dissipation: 86W, Polarisation: unipolar, Technology: WMOS™ M3, Kind of channel: enhanced, Gate-source voltage: ±30V, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote WMN12N80M3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
WMN12N80M3 WMN12N80M3 Hersteller : WAYON WMx12N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
On-state resistance: 620mΩ
Drain current: 12A
Drain-source voltage: 800V
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar