WMO16N65SR WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Pulsed drain current: 35A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Pulsed drain current: 35A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details WMO16N65SR WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W, Type of transistor: N-MOSFET, Technology: WMOS™ SR, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 8.4A, Pulsed drain current: 35A, Power dissipation: 86W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.35Ω, Mounting: SMD, Gate charge: 19.5nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMO16N65SR
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WMO16N65SR | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.4A Pulsed drain current: 35A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 19.5nC Kind of package: reel; tape Kind of channel: enhanced |
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