WMX3N150D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 239 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 41+ | 1.77 EUR |
| 45+ | 1.62 EUR |
| 57+ | 1.27 EUR |
| 60+ | 1.2 EUR |
| 300+ | 1.19 EUR |
| 900+ | 1.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMX3N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W, Case: TO3PF, Mounting: THT, Kind of package: tube, Power dissipation: 90W, Polarisation: unipolar, Gate charge: 40nC, Technology: WMOS™ D1, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 12A, Drain-source voltage: 1.5kV, Drain current: 3A, On-state resistance: 5.7Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMX3N150D1 nach Preis ab 1.2 EUR bis 1.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMX3N150D1 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W Case: TO3PF Mounting: THT Kind of package: tube Power dissipation: 90W Polarisation: unipolar Gate charge: 40nC Technology: WMOS™ D1 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 12A Drain-source voltage: 1.5kV Drain current: 3A On-state resistance: 5.7Ω Type of transistor: N-MOSFET |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
|