auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.66 EUR |
10+ | 3.91 EUR |
25+ | 3.7 EUR |
100+ | 3.15 EUR |
250+ | 2.99 EUR |
500+ | 2.82 EUR |
1000+ | 2.41 EUR |
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Technische Details XP65AN1K2IT YAGEO XSemi
Description: MOSFET N-CH 650V 7A TO220CFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V, Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220CFM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 100 V.
Weitere Produktangebote XP65AN1K2IT nach Preis ab 2.43 EUR bis 4.7 EUR
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XP65AN1K2IT | Hersteller : YAGEO XSEMI |
Description: MOSFET N-CH 650V 7A TO220CFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220CFM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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