YJ10N65CI YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details YJ10N65CI YANGJIE TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 50W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 860mΩ, Mounting: THT, Gate charge: 65nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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YJ10N65CI | Hersteller : YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 40A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 860mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |