YJG53G06A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 34A; 30W, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 34A, Pulsed drain current: 160A, Power dissipation: 30W, Case: DFN5060-8, Gate-source voltage: ±20V, On-state resistance: 12mΩ, Mounting: SMD, Gate charge: 31nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.