ZHB6790TA

ZHB6790TA Diodes Incorporated


ZHB6790.pdf Hersteller: Diodes Incorporated
Description: TRANS 2NPN/2PNP 40V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
auf Bestellung 52000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2 EUR
2000+ 1.9 EUR
5000+ 1.83 EUR
Mindestbestellmenge: 1000
Produktrezensionen
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Technische Details ZHB6790TA Diodes Incorporated

Description: TRANS 2NPN/2PNP 40V 2A SOT223, Packaging: Tape & Reel (TR), Package / Case: SOT-223-8, Mounting Type: Surface Mount, Transistor Type: 2 NPN, 2 PNP (H-Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.25W, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SM8.

Weitere Produktangebote ZHB6790TA nach Preis ab 1.78 EUR bis 4.22 EUR

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Preis ohne MwSt
ZHB6790TA ZHB6790TA Hersteller : Diodes Incorporated ZHB6790.pdf Bipolar Transistors - BJT H-Bridge-40V
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.03 EUR
10+ 3.61 EUR
100+ 2.92 EUR
500+ 2.39 EUR
1000+ 1.97 EUR
2000+ 1.83 EUR
5000+ 1.78 EUR
ZHB6790TA ZHB6790TA Hersteller : Diodes Incorporated ZHB6790.pdf Description: TRANS 2NPN/2PNP 40V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
auf Bestellung 52967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.22 EUR
10+ 3.51 EUR
100+ 2.79 EUR
500+ 2.36 EUR
Mindestbestellmenge: 5
ZHB6790TA ZHB6790.pdf
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
ZHB6790TA Hersteller : DIODES INCORPORATED ZHB6790.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP x2; bipolar; 40V; 2A; 2W; SM8; H-bridge
Type of transistor: NPN / PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 2W
Case: SM8
Pulsed collector current: 6A
Current gain: 150
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Semiconductor structure: H-bridge
Produkt ist nicht verfügbar
ZHB6790TA Hersteller : DIODES INCORPORATED ZHB6790.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP x2; bipolar; 40V; 2A; 2W; SM8; H-bridge
Type of transistor: NPN / PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 2W
Case: SM8
Pulsed collector current: 6A
Current gain: 150
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Semiconductor structure: H-bridge
Produkt ist nicht verfügbar