Technische Details ZTX696BSTZ
Description: TRANS NPN 180V 0.5A E-LINE, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V, Frequency - Transition: 70MHz, Supplier Device Package: E-Line (TO-92 compatible), Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 180 V, Power - Max: 1 W.
Weitere Produktangebote ZTX696BSTZ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ZTX696BSTZ | Hersteller : Diodes Inc | Trans GP BJT NPN 180V 0.5A 1000mW 3-Pin E-Line Box |
Produkt ist nicht verfügbar |
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ZTX696BSTZ | Hersteller : Diodes Zetex | Trans GP BJT NPN 180V 0.5A 1000mW 3-Pin E-Line Box |
Produkt ist nicht verfügbar |
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ZTX696BSTZ | Hersteller : Diodes Incorporated |
Description: TRANS NPN 180V 0.5A E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V Frequency - Transition: 70MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 180 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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ZTX696BSTZ | Hersteller : Diodes Incorporated | Bipolar Transistors - BJT NPN Super E-Line |
Produkt ist nicht verfügbar |