Produkte > ADVANCED LINEAR DEVICES INC. > Alle Produkte des Herstellers ADVANCED LINEAR DEVICES INC. (527) > Seite 1 nach 9
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ALD1101APAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Rds On (Max) @ Id, Vgs: 75Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1101ASAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 75Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1101BPAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 75Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1101BSAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 40mA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1101PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 75Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Supplier Device Package: 8-PDIP Part Status: Active |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1101SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 75Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1102APAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 270Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1102ASAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 270Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1102BPAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Rds On (Max) @ Id, Vgs: 270Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1102BSAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1102PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Rds On (Max) @ Id, Vgs: 270Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Supplier Device Package: 8-PDIP Part Status: Active |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1102SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Rds On (Max) @ Id, Vgs: 270Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1103PBL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N and 2 P-Channel Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Rds On (Max) @ Id, Vgs: 75Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Supplier Device Package: 14-PDIP Part Status: Active |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1103SBL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Rds On (Max) @ Id, Vgs: 75Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Supplier Device Package: 14-SOIC Part Status: Active |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1105PBL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N and 2 P-Channel Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 14-PDIP Part Status: Active |
auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1105SBL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 14-SOIC Part Status: Active |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1106PBL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 14-PDIP Part Status: Active |
auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1106SBL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 14-SOIC Part Status: Active |
auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1107PBL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 P-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 1µA Supplier Device Package: 14-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1107SBL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 P-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 1µA Supplier Device Package: 14-SOIC Part Status: Active |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD110800APCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Supplier Device Package: 16-PDIP Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD110800ASCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Supplier Device Package: 16-SOIC Part Status: Active |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD110800PCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 20mV @ 1µA Supplier Device Package: 16-PDIP Part Status: Active |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD110800SCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 20mV @ 1µA Supplier Device Package: 16-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110802PCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V Vgs(th) (Max) @ Id: 220mV @ 1µA Supplier Device Package: 16-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110802SCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V Vgs(th) (Max) @ Id: 220mV @ 1µA Supplier Device Package: 16-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110804PCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V Vgs(th) (Max) @ Id: 420mV @ 1µA Supplier Device Package: 16-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110804SCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V Vgs(th) (Max) @ Id: 420mV @ 1µA Supplier Device Package: 16-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110808APCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V Vgs(th) (Max) @ Id: 810mV @ 1µA Supplier Device Package: 16-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110808ASCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V Vgs(th) (Max) @ Id: 810mV @ 1µA Supplier Device Package: 16-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110808PCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Supplier Device Package: 16-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110808SCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Supplier Device Package: 16-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110814PCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Supplier Device Package: 16-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110814SCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Supplier Device Package: 16-SOIC Part Status: Active |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1108EPCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 10V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5V Vgs(th) (Max) @ Id: 1.01V @ 1µA Supplier Device Package: 16-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1108ESCL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 10V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5V Vgs(th) (Max) @ Id: 1.01V @ 1µA Supplier Device Package: 16-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110900APAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD110900ASAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110900PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 20mV @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110900SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 20mV @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110902PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V Vgs(th) (Max) @ Id: 220mV @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110902SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V Vgs(th) (Max) @ Id: 220mV @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD110904PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V Vgs(th) (Max) @ Id: 420mV @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110904SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V Vgs(th) (Max) @ Id: 420mV @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110908APAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V Vgs(th) (Max) @ Id: 810mV @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110908ASAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V Vgs(th) (Max) @ Id: 810mV @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110908PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110908SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110914PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD110914SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1110EPAL | Advanced Linear Devices Inc. |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1110ESAL | Advanced Linear Devices Inc. |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1115MAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 8-MSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1115PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: N and P-Channel Complementary Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1115SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ALD1116PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1116SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 1170 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1117PAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD1117SAL | Advanced Linear Devices Inc. |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 1µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 245 Stücke: Lieferzeit 10-14 Tag (e) |
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ALD111910MAL | Advanced Linear Devices Inc. | Description: MOSFET 2N-CH 8MSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
ALD1101APAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1101ASAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1101BPAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1101BSAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.04A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 0.04A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1101PAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.61 EUR |
50+ | 9.20 EUR |
ALD1101SAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1102APAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1102ASAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1102BPAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1102BSAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1102PAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.61 EUR |
ALD1102SAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.43 EUR |
ALD1103PBL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N/2P-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 14-PDIP
Part Status: Active
Description: MOSFET 2N/2P-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 14-PDIP
Part Status: Active
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.97 EUR |
ALD1103SBL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 14-SOIC
Part Status: Active
Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Supplier Device Package: 14-SOIC
Part Status: Active
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 17.97 EUR |
50+ | 10.03 EUR |
ALD1105PBL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N/2P-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
Description: MOSFET 2N/2P-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.95 EUR |
50+ | 7.01 EUR |
100+ | 6.44 EUR |
ALD1105SBL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
Description: MOSFET 2N/2P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.99 EUR |
50+ | 7.03 EUR |
ALD1106PBL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.95 EUR |
50+ | 7.01 EUR |
100+ | 6.44 EUR |
ALD1106SBL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
auf Bestellung 595 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.95 EUR |
50+ | 7.01 EUR |
100+ | 6.44 EUR |
500+ | 5.48 EUR |
ALD1107PBL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4P-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
Description: MOSFET 4P-CH 10.6V 14PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1107SBL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
Description: MOSFET 4P-CH 10.6V 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 P-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 14-SOIC
Part Status: Active
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.02 EUR |
ALD110800APCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.53 EUR |
ALD110800ASCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 17.16 EUR |
ALD110800PCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.62 EUR |
ALD110800SCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110802PCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110802SCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110804PCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110804SCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110808APCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110808ASCL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110808PCL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110808SCL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110814PCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110814SCL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10.6V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.50 EUR |
ALD1108EPCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Description: MOSFET 4N-CH 10V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1108ESCL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: MOSFET 4N-CH 10V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 10V
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110900APAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.44 EUR |
ALD110900ASAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110900PAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110900SAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V
Vgs(th) (Max) @ Id: 20mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110902PAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110902SAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.28 EUR |
ALD110904PAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110904SAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110908APAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110908ASAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110908PAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110908SAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110914PAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD110914SAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1110EPAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10V 8DIP
Description: MOSFET 2N-CH 10V 8DIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1110ESAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10V 8SOIC
Description: MOSFET 2N-CH 10V 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1115MAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET N/P-CH 10.6V 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-MSOP
Description: MOSFET N/P-CH 10.6V 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1115PAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET N/P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET N/P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.15 EUR |
ALD1115SAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET N/P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ALD1116PAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.28 EUR |
ALD1116SAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1170 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.28 EUR |
50+ | 4.86 EUR |
100+ | 4.43 EUR |
500+ | 3.69 EUR |
1000+ | 3.51 EUR |
ALD1117PAL |
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Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
Description: MOSFET 2P-CH 10.6V 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.15 EUR |
ALD1117SAL |
![]() |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.28 EUR |
50+ | 4.87 EUR |
100+ | 4.44 EUR |
ALD111910MAL |
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 8MSOP
Description: MOSFET 2N-CH 8MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH