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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.55 EUR |
| 10+ | 12.14 EUR |
| 50+ | 7.15 EUR |
| 100+ | 6.56 EUR |
| 250+ | 6.48 EUR |
| 500+ | 5.56 EUR |
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Technische Details ALD110900PAL Advanced Linear Devices
Description: MOSFET 2N-CH 10.6V 8PDIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V, Rds On (Max) @ Id, Vgs: 500Ohm @ 4V, Vgs(th) (Max) @ Id: 20mV @ 1µA, Supplier Device Package: 8-PDIP, Part Status: Active.
Weitere Produktangebote ALD110900PAL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ALD110900PAL | Hersteller : Advanced Linear Devices Inc. |
 Description: MOSFET 2N-CH 10.6V 8PDIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Rds On (Max) @ Id, Vgs: 500Ohm @ 4V Vgs(th) (Max) @ Id: 20mV @ 1µA Supplier Device Package: 8-PDIP Part Status: Active |
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