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Hersteller: AKYGA SEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 120A
Kind of package: reel; tape
Capacitance: 0.2nF

Hersteller: AKYGA SEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape

Hersteller: AKYGA SEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 3GHz

Hersteller: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 14.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 14.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement

Hersteller: AKYGA SEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 600W; 5÷6.5V; 100A; unidirectional; DO214AA,SMB
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5...6.5V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape

Hersteller: AKYGA SEMI
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 380÷420V; 2.7A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE

Hersteller: AKYGA SEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD; tape
Max. off-state voltage: 1kV
Load current: 3A
Kind of package: tape
Semiconductor structure: single diode
Case: DO201AD
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 125A
Max. forward voltage: 1.1V

Hersteller: AKYGA SEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz

Hersteller: AKYGA SEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1.5A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -20...125°C
Number of channels: 1
Input voltage: 7...20V

Hersteller: AKYGA SEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1.2A; TO252; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1.2A
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 8...20V

Hersteller: AKYGA SEMI
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 35A; Ifsm: 450A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.45kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: 3GBJ

Hersteller: AKYGA SEMI
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 450A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.45kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: 3GBJ

Hersteller: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -55A; 3W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Pulsed drain current: -55A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement

Hersteller: AKYGA SEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 60A; 3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 30nC

Hersteller: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; Idm: -0.8A; 285mW
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -200mA
Power dissipation: 285mW
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Kind of channel: enhancement
Case: SOT23
Pulsed drain current: -0.8A
Gate charge: 1.8nC
Polarisation: unipolar
Kind of package: reel; tape