Produkte > AKYGA SEMI > Alle Produkte des Herstellers AKYGA SEMI (201) > Seite 4 nach 4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AKS1199 | AKYGA SEMI |
 Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5÷16V; 15A; 300W; asymmetric,bidirectional Type of diode: TVS array Breakdown voltage: 7.5...16V Max. forward impulse current: 15A Peak pulse power dissipation: 0.3kW Semiconductor structure: asymmetric; bidirectional Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 7...12V Number of channels: 2 Kind of package: reel; tape |
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AKS1201 | AKYGA SEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; bidirectional; ESD; SOT23-6; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: bidirectional Version: ESD Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5V Number of channels: 2 Application: Ethernet; USB Kind of package: reel; tape |
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| AKS1202 | AKYGA SEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 200A Case: R6 Kind of package: tape Max. forward voltage: 1.1V |
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AKS1204 | AKYGA SEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 100V; 150mA; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.35A Kind of package: reel; tape Power dissipation: 0.5W Capacitance: 12pF |
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AKS1206 | AKYGA SEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -8A Gate charge: 11nC |
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AKS1207 | AKYGA SEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape Case: SMB Max. off-state voltage: 60V Load current: 5A Kind of package: reel; tape Semiconductor structure: single diode Capacitance: 0.2nF Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 120A Max. forward voltage: 0.7V |
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AKS1213 | AKYGA SEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 70A Kind of package: reel; tape |
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AKS1215 | AKYGA SEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 3GHz |
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| AKS1218 | AKYGA SEMI |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 14.4A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.7A Pulsed drain current: 14.4A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 38mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement |
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AKS1225 | AKYGA SEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 600W; 5÷6.5V; 100A; unidirectional; DO214AA,SMB Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.6kW Max. off-state voltage: 3.3V Breakdown voltage: 5...6.5V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape |
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| AKS1227 | AKYGA SEMI |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 380÷420V; 2.7A; bidirectional; DO201AE; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 342V Breakdown voltage: 380...420V Max. forward impulse current: 2.7A Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
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AKS1228 | AKYGA SEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD; tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD Kind of package: tape Max. forward voltage: 1.1V |
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AKS1230 | AKYGA SEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 625mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Case: TO92 Mounting: THT Frequency: 300MHz Power dissipation: 0.625W Current gain: 100...300 Kind of package: bulk |
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AKS1326 | AKYGA SEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1.5A; TO220-3; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 1.5A Case: TO220-3 Mounting: THT Kind of package: tube Operating temperature: -20...125°C Number of channels: 1 Input voltage: 7...20V |
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AKS1328 | AKYGA SEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1.2A; TO252; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 1.2A Case: TO252 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Input voltage: 8...20V |
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| AKS1372 | AKYGA SEMI |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 800V; If: 35A; Ifsm: 450A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 35A Max. forward impulse current: 0.45kA Electrical mounting: THT Version: flat Max. forward voltage: 1.1V Leads: flat pin Case: 3GBJ |
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| AKS1373 | AKYGA SEMI |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 450A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.45kA Version: flat Case: 3GBJ Electrical mounting: THT Leads: flat pin Max. forward voltage: 1.1V |
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AKS1376 | AKYGA SEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -55A; 3W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Type of transistor: P-MOSFET Gate-source voltage: ±10V On-state resistance: 20mΩ Pulsed drain current: -55A Power dissipation: 3W Gate charge: 73nC Polarisation: unipolar Drain current: -10A Kind of channel: enhancement Drain-source voltage: -20V |
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AKS1392 | AKYGA SEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 60A; 3W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 60A Gate charge: 30nC |
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| AKS1394 | AKYGA SEMI |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Version: flat Case: SGBJ Electrical mounting: THT Leads: flat pin Max. forward voltage: 1.1V |
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AKS1397 | AKYGA SEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; Idm: -0.8A; 285mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -200mA Power dissipation: 285mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5.7Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -0.8A |
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| AKS1199 |
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Hersteller: AKYGA SEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷16V; 15A; 300W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...16V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: asymmetric; bidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Number of channels: 2
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷16V; 15A; 300W; asymmetric,bidirectional
Type of diode: TVS array
Breakdown voltage: 7.5...16V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: asymmetric; bidirectional
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Number of channels: 2
Kind of package: reel; tape
auf Bestellung 4754 Stücke:
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| AKS1201 |
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Hersteller: AKYGA SEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; ESD; SOT23-6; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Number of channels: 2
Application: Ethernet; USB
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; ESD; SOT23-6; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5V
Number of channels: 2
Application: Ethernet; USB
Kind of package: reel; tape
auf Bestellung 5016 Stücke:
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| AKS1202 |
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Hersteller: AKYGA SEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: R6
Kind of package: tape
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: R6
Kind of package: tape
Max. forward voltage: 1.1V
auf Bestellung 10000 Stücke:
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| AKS1204 |
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Hersteller: AKYGA SEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 100V; 150mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Kind of package: reel; tape
Power dissipation: 0.5W
Capacitance: 12pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 100V; 150mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Kind of package: reel; tape
Power dissipation: 0.5W
Capacitance: 12pF
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| AKS1206 |
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Hersteller: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -8A
Gate charge: 11nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -8A
Gate charge: 11nC
auf Bestellung 2230 Stücke:
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| AKS1207 |
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Hersteller: AKYGA SEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Case: SMB
Max. off-state voltage: 60V
Load current: 5A
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 120A
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Case: SMB
Max. off-state voltage: 60V
Load current: 5A
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 120A
Max. forward voltage: 0.7V
auf Bestellung 2188 Stücke:
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| AKS1213 |
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Hersteller: AKYGA SEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
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| AKS1215 |
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Hersteller: AKYGA SEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 3GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 3GHz
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| AKS1218 |
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Hersteller: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 14.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 14.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 14.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Pulsed drain current: 14.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| AKS1225 |
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Hersteller: AKYGA SEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 600W; 5÷6.5V; 100A; unidirectional; DO214AA,SMB
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5...6.5V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 600W; 5÷6.5V; 100A; unidirectional; DO214AA,SMB
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5...6.5V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
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| AKS1227 |
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Hersteller: AKYGA SEMI
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 380÷420V; 2.7A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 380÷420V; 2.7A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 2.7A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
auf Bestellung 1800 Stücke:
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| AKS1228 |
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Hersteller: AKYGA SEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD; tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: tape
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD; tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: tape
Max. forward voltage: 1.1V
auf Bestellung 1250 Stücke:
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| AKS1230 |
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Hersteller: AKYGA SEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power dissipation: 0.625W
Current gain: 100...300
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power dissipation: 0.625W
Current gain: 100...300
Kind of package: bulk
auf Bestellung 9613 Stücke:
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| AKS1326 |
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Hersteller: AKYGA SEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1.5A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -20...125°C
Number of channels: 1
Input voltage: 7...20V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1.5A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -20...125°C
Number of channels: 1
Input voltage: 7...20V
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
| AKS1328 |
|
Hersteller: AKYGA SEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1.2A; TO252; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1.2A
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 8...20V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1.2A; TO252; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1.2A
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 8...20V
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| AKS1372 |
|
Hersteller: AKYGA SEMI
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 35A; Ifsm: 450A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.45kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: 3GBJ
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 35A; Ifsm: 450A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.45kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: 3GBJ
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| AKS1373 |
|
Hersteller: AKYGA SEMI
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 450A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.45kA
Version: flat
Case: 3GBJ
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 450A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.45kA
Version: flat
Case: 3GBJ
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
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| AKS1376 |
|
Hersteller: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -55A; 3W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
On-state resistance: 20mΩ
Pulsed drain current: -55A
Power dissipation: 3W
Gate charge: 73nC
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -55A; 3W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
On-state resistance: 20mΩ
Pulsed drain current: -55A
Power dissipation: 3W
Gate charge: 73nC
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -20V
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| AKS1392 |
Hersteller: AKYGA SEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 60A; 3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 30nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 60A; 3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 30nC
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| AKS1394 |
Hersteller: AKYGA SEMI
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: flat
Case: SGBJ
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1kV; If: 35A; Ifsm: 400A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: flat
Case: SGBJ
Electrical mounting: THT
Leads: flat pin
Max. forward voltage: 1.1V
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| AKS1397 |
|
Hersteller: AKYGA SEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; Idm: -0.8A; 285mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -200mA
Power dissipation: 285mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -0.8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.2A; Idm: -0.8A; 285mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -200mA
Power dissipation: 285mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.7Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -0.8A
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