Die Produkte microsemi corporation

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JAN1N6316CUS 11083-lds-0193-1-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6316D 10924-lds-0193-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD130-16 MSD130-16 10534-msd130-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Current - Average Rectified (Io): 130A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
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Lieferzeit 21-28 Tag (e)
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10+ 80.48 EUR
25+ 79.85 EUR
APT40DC120HJ APT40DC120HJ index.php?option=com_docman&task=doc_download&gid=7001 Microsemi Corporation Description: BRIDGE RECT 1P 1.2KV 40A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD30-12 MSD30-12 10539-msd30-rev0-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Supplier Device Package: MSD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSDM75-16 MSDM75-16 MSDM75.pdf Microsemi Corporation Description: BRIDGE RECT 3P 1.6KV 75A M2-1
Current - Average Rectified (Io): 75A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD75-12 MSD75-12 10544-msd75-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.2KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD75-08 MSD75-08 10544-msd75-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 800V 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSDM100-16 MSDM100-16 MSDM100.pdf Microsemi Corporation Description: BRIDGE RECT 3P 1.6KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD100-12 MSD100-12 10532-msd100-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.2KV 100A M3
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD100-08 MSD100-08 10532-msd100-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 800V 100A M3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Package / Case: SM3-20H
Supplier Device Package: M3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD200-08 MSD200-08 10538-msd200-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 800V 200A M3
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC40H1201G APTDC40H1201G 7411-aptdc40h1201g-datasheet Microsemi Corporation Description: BRIDGE RECT 1PHASE 1.2KV 40A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD30-18 10539-msd30-rev0-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.8KV 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD30-16 MSD30-16 10539-msd30-rev0-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.6KV 30A MSD
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: MSD
Package / Case: M1
Mounting Type: QC Terminal
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.6kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT60DF120HJ APT60DF120HJ APT60DF120HJ.pdf Microsemi Corporation Description: BRIDGE RECT 1P 1.2KV 90A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD75-18 10544-msd75-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.8KV 75A
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.8kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSDM100-08 MSDM100.pdf Microsemi Corporation Description: BRIDGE RECT 3P 800V 100A M2-1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Reverse Leakage @ Vr: 500µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSDM100-12 MSDM100-12 MSDM100.pdf Microsemi Corporation Description: BRIDGE RECT 3P 1.2KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT100DL60HJ APT100DL60HJ 6557-apt100dl60hj-datasheet Microsemi Corporation Description: BRIDGE RECT 1P 600V 100A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
MSDM100-18 MSDM100.pdf Microsemi Corporation Description: BRIDGE RECT 3P 1.8KV 100A M2-1
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD75-16 MSD75-16 10544-msd75-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.6KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.6kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC10H601G APTDC10H601G_Oct2012.pdf Microsemi Corporation Description: BRIDGE RECT 1PHASE 600V 10A SP1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 200µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10DC120HJ APT10DC120HJ index.php?option=com_docman&task=doc_download&gid=6587 Microsemi Corporation Description: BRIDGE RECT 1P 1.2KV 10A SOT227
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 1.2kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC20H601G index.php?option=com_docman&task=doc_download&gid=7408 Microsemi Corporation Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 600V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDF200H170G 7424-aptdf200h170g-datasheet Microsemi Corporation Description: BRIDGE RECT 1P 1.7KV 240A SP6
Base Part Number: APTDF200
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 350µA @ 1700V
Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
Current - Average Rectified (Io): 240A
Voltage - Peak Reverse (Max): 1.7kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC20H1201G index.php?option=com_docman&task=doc_download&gid=7407 Microsemi Corporation Description: BRIDGE RECT 1PHASE 1.2KV 20A SP1
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20DC120HJ APT20DC120HJ index.php?option=com_docman&task=doc_download&gid=6718 Microsemi Corporation Description: BRIDGE RECT 1P 1.2KV 20A SOT227
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 20A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC40H601G APTDC40H601G 7412-aptdc40h601g-datasheet Microsemi Corporation Description: BRIDGE RECT 1PHASE 600V 40A SP1
Packaging: Bulk
Manufacturer: Microsemi Corporation
Base Part Number: APTDC40
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT20140 UFT20140 UFT200_201_202.pdf Microsemi Corporation Description: DIODE MODULE 400V 100A
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Mounting Type: Screw Mount
Package / Case: Module
Supplier Device Package: Module
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 330 Stücke - Preis und Lieferfrist anzeigen
CPT60045 CPT60045 CPT60035-45_Dwg.pdf Microsemi Corporation Description: DIODE MODULE 45V 300A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 2A @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X51DC120J APT2X51DC120J doc_details Microsemi Corporation Description: DIODE MODULE 1.2KV 50A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X60DC120J APT2X60DC120J index.php?option=com_docman&task=doc_download&gid=6855 Microsemi Corporation Description: DIODE MODULE 1.2KV 60A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X61D40J APT2X61D40J 6167-apt2x61d40j-apt2x60d40j-datasheet Microsemi Corporation Description: DIODE MODULE 400V 60A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37ns
Current - Reverse Leakage @ Vr: 250µA @ 400V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
1+ 50.13 EUR
10+ 46.23 EUR
APT2X100DQ100J APT2X100DQ100J 123802-apt2x101dq100j-apt2x100dq100j-datasheet Microsemi Corporation Description: DIODE MODULE 1KV 100A ISOTOP
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 290ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSCD60-12 MSCD60-12 MSxD60.pdf Microsemi Corporation Description: DIODE MODULE 1.2KV 60A D1
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Packaging: Bulk
Part Status: Obsolete
Manufacturer: Microsemi Corporation
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
1+ 34.43 EUR
MSCD60-16 MSCD60-16 MSxD60.pdf Microsemi Corporation Description: DIODE MODULE 1.6KV 60A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSKD60-16 MSKD60-16 MSxD60.pdf Microsemi Corporation Description: DIODE MODULE 1.6KV 60A D1
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X31D120J APT2X31D120J 6158-apt2x31d120j-apt2x30d120j-datasheet Microsemi Corporation Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
1+ 58.98 EUR
10+ 54.41 EUR
MSKD100-08 MSKD100-08 127505-msk-a-cd100-rev1 Microsemi Corporation Description: DIODE MODULE 800V 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 800V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSKD100-12 MSKD100-12 127505-msk-a-cd100-rev1 Microsemi Corporation Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSCD120-12 MSCD120-12 MSxD120.pdf Microsemi Corporation Description: DIODE MODULE 1.2KV 120A D1
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Current - Average Rectified (Io) (per Diode): 120A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1+ 48.44 EUR
MSCD120-16 MSCD120-16 MSxD120.pdf Microsemi Corporation Description: DIODE MODULE 1.6KV 120A D1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 6mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X150DL60J APT2X150DL60J index.php?option=com_docman&task=doc_download&gid=6840 Microsemi Corporation Description: DIODE MODULE 600V 150A ISOTOP
Manufacturer: Microsemi Corporation
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 408ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS123100 HS123100 HS12380,90,100.pdf Microsemi Corporation Description: DIODE SCHOTTKY 100V 120A HALFPAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 3mA @ 100V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT7260SM5D UFT7260SM5D Microsemi Corporation Description: DIODE MODULE 600V 35A SM5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
Current - Average Rectified (Io) (per Diode): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25µA @ 600V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SM5
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST153100 FST153100 Microsemi Corporation Description: DIODE MODULE 100V 75A TO249
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Screw Mount
Current - Reverse Leakage @ Vr: 1.5mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 940mV @ 75A
Current - Average Rectified (Io) (per Diode): 75A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST60100 FST60100 FST6080-FST60100_Dwg.pdf Microsemi Corporation Description: DIODE MODULE 100V 60A TO249
Current - Reverse Leakage @ Vr: 2mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT14140 UFT14140 Microsemi Corporation Description: DIODE MODULE 400V 70A TO249
Mounting Type: Screw Mount
Package / Case: TO-249AA
Supplier Device Package: TO-249
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16050 FST16050 FST16035-FST16050.pdf Microsemi Corporation Description: DIODE MODULE 50V 80A TO249
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 50V
Mounting Type: Chassis Mount
Package / Case: TO-249AA Isolated Base
Supplier Device Package: TO-249
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS246150 HS246150 HS246150(R).pdf Microsemi Corporation Description: DIODE SCHOTTKY 150V 240A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 8mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Current - Average Rectified (Io): 240A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HU10260 HU10260 HU100,101,102.pdf Microsemi Corporation Description: DIODE GEN PURP 600V 100A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CPT40145 CPT40145 CPT40130-CPT40145.pdf Microsemi Corporation Description: DIODE MODULE 45V 200A MD3CC
Supplier Device Package: MD3CC
Package / Case: MD3CC
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 570mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HU20260 HU20260 Microsemi Corporation Description: DIODE GEN PURP 600V 200A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 130ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
1+ 181.44 EUR
CPT50060 CPT50060 CPT50060.pdf Microsemi Corporation Description: DIODE MODULE 60V 250A 2TOWER
Part Status: Obsolete
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 730mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 280 Stücke - Preis und Lieferfrist anzeigen
CPT500100 CPT500100 Microsemi Corporation Description: DIODE MODULE 100V 250A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
APT2X21DC120J APT2X21DC120J 6842-apt2x21dc120j-apt2x20dc120j-datasheet Microsemi Corporation Description: DIODE MODULE 1.2KV 20A SOT227
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SDM30004 SDM30004 SDM300.pdf Microsemi Corporation Description: DIODE GEN PURP 400V 300A MODULE
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 400V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDF400KK170G APTDF400KK170G 7442-aptdf400kk170g-datasheet Microsemi Corporation Description: DIODE MODULE 1.7KV 480A SP6
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io) (per Diode): 480A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572ns
Current - Reverse Leakage @ Vr: 750µA @ 1700V
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: SP6
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1+ 349.15 EUR
APT2X41DC120J APT2X41DC120J 6850-apt2x41dc120j-apt2x40dc120j-datasheet Microsemi Corporation Description: DIODE MODULE 1.2KV 40A SOT227
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io) (per Diode): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X61DC120J APT2X61DC120J 6855-apt2x61dc120j-apt2x60dc120j-datasheet Microsemi Corporation Description: DIODE MODULE 1.2KV 60A SOT227
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
auf Bestellung 202 Stücke
Lieferzeit 21-28 Tag (e)
1+ 330.59 EUR
10+ 308.99 EUR
25+ 298.19 EUR
APTM50HM75STG APTM50HM75STG index.php?option=com_docman&task=doc_download&gid=8195 Microsemi Corporation Description: MOSFET 4N-CH 500V 46A SP4
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A
Drain to Source Voltage (Vdss): 500V
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
1+ 257.81 EUR
10+ 241.7 EUR
25+ 230.42 EUR
APTM10AM02FG APTM10AM02FG index.php?option=com_docman&task=doc_download&gid=8040 Microsemi Corporation Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Package / Case: SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Power - Max: 1250W
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 71 Stücke
Lieferzeit 21-28 Tag (e)
1+ 499.88 EUR
10+ 478.77 EUR
25+ 468.21 EUR
APT17F120J APT17F120J 6692-apt17f120j-datasheet Microsemi Corporation Description: MOSFET N-CH 1200V 18A SOT-227
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
Power Dissipation (Max): 545W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10M11JVRU2 APT10M11JVRU2 APT10M11JVRU2.pdf Microsemi Corporation Description: MOSFET N-CH 100V 142A SOT227
Packaging: Bulk
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Power Dissipation (Max): 450W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10035JLL APT10035JLL 123944-apt10035jll-c-pdf Microsemi Corporation Description: MOSFET N-CH 1000V 25A SOT-227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20M22JVRU2 APT20M22JVRU2 6750-apt20m22jvru2-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 97A SOT-227
Power Dissipation (Max): 450W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT100F50J APT100F50J 6559-apt100f50j-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 103A SOT227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT60M75JFLL APT60M75JFLL 6442-apt60m75jfll-datasheet Microsemi Corporation Description: MOSFET N-CH 600V 58A SOT-227
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
1+ 121.17 EUR
APT60M75JLL APT60M75JLL 6443-apt60m75jll-datasheet Microsemi Corporation Description: MOSFET N-CH 600V 58A SOT-227
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM10HM19FT3G APTM10HM19FT3G index.php?option=com_docman&task=doc_download&gid=8057 Microsemi Corporation Description: MOSFET 4N-CH 100V 70A SP3
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 208W
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT33N90JCCU2 APT33N90JCCU2 doc_details Microsemi Corporation Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10021JLL APT10021JLL 5610-apt10021jll-datasheet Microsemi Corporation Description: MOSFET N-CH 1000V 37A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1+ 177.02 EUR
APTM100H45STG APTM100H45STG index.php?option=com_docman&task=doc_download&gid=8015 Microsemi Corporation Description: MOSFET 4N-CH 1000V 18A SP4
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
1+ 313.18 EUR
APTM100A18FTG APTM100A18FTG index.php?option=com_docman&task=doc_download&gid=7992 Microsemi Corporation Description: MOSFET 2N-CH 1000V 43A SP4
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
Packaging: Bulk
Part Status: Active
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM10HM05FG APTM10HM05FG index.php?option=com_docman&task=doc_download&gid=8054 Microsemi Corporation Description: MOSFET 4N-CH 100V 278A SP6
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM20UM03FAG APTM20UM03FAG index.php?option=com_docman&task=doc_download&gid=8144 Microsemi Corporation Description: MOSFET N-CH 200V 580A SP6
Input Capacitance (Ciss) (Max) @ Vds: 43300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 840nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 15mA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Bulk
Power Dissipation (Max): 2270W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM100H18FG APTM100H18FG index.php?option=com_docman&task=doc_download&gid=8009 Microsemi Corporation Description: MOSFET 4N-CH 1000V 43A SP6
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM100AM90FG APTM100AM90FG index.php?option=com_docman&task=doc_download&gid=7998 Microsemi Corporation Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6849 2N6849 8809-lds-0009-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12 Stücke - Preis und Lieferfrist anzeigen
2N6804 125024-lds-0113-datasheet Microsemi Corporation Description: MOSFET P-CH 100V TO-204AA TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120 Stücke - Preis und Lieferfrist anzeigen
2N6762 8925-lds-0111-datasheet Microsemi Corporation Description: MOSFET N-CH 500V TO-3
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
2N6760 8925-lds-0111-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 5.5A TO204AA
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
2N6766 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 200V TO-204AE TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20M22JVRU3 APT20M22JVRU3 6751-apt20m22jvru3-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 97A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10M11JVRU3 APT10M11JVRU3 APT10M11JVRU3.pdf Microsemi Corporation Description: MOSFET N-CH 100V 142A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
1+ 71.96 EUR
APTM100DA33T1G index.php?option=com_docman&task=doc_download&gid=8002 Microsemi Corporation Description: MOSFET N-CH 1000V 23A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Package / Case: SP1
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM100SK33T1G index.php?option=com_docman&task=doc_download&gid=8019 Microsemi Corporation Description: MOSFET N-CH 1000V 23A SP1
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM120DA56T1G Microsemi Corporation Description: MOSFET N-CH 1200V 18A SP1
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM120SK56T1G APTM120SK56T1G.pdf Microsemi Corporation Description: MOSFET N-CH 1200V 18A SP1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Power Dissipation (Max): 390W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM60H23FT1G APTM60H23UT1G-Rev0.pdf Microsemi Corporation Description: MOSFET 4N-CH 600V 20A SP1
Packaging: Bulk
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT45M100J APT45M100J 7053-apt45m100j-datasheet Microsemi Corporation Description: MOSFET N-CH 1000V 45A SOT-227
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC60AM83B1G Microsemi Corporation Description: MOSFET 3N-CH 600V 36A SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A
Drain to Source Voltage (Vdss): 600V
FET Feature: Super Junction
FET Type: 3 N Channel (Phase Leg + Boost Chopper)
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC60DSKM45T1G Microsemi Corporation Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC80DSK15T3G Microsemi Corporation Description: MOSFET 2N-CH 800V 28A SP3
Supplier Device Package: SP3
Package / Case: SP3
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 277W
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT33N90JCCU3 APT33N90JCCU3 Microsemi Corporation Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6766T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 30A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC90SKM60T1G 7394-aptc90skm60t1g-datasheet Microsemi Corporation Description: MOSFET N-CH 900V 59A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC90DSK12T1G APTC90DSK12T1G.pdf Microsemi Corporation Description: MOSFET 2N-CH 900V 30A SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 900V
FET Feature: Super Junction
FET Type: 2 N Channel (Dual Buck Chopper)
Part Status: Obsolete
Supplier Device Package: SP1
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM10DHM09T3G Microsemi Corporation Description: MOSFET 2N-CH 100V 139A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6316CUS 11083-lds-0193-1-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6316D 10924-lds-0193-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD130-16 10534-msd130-rev1-datasheet
MSD130-16
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Current - Average Rectified (Io): 130A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
auf Bestellung 34 Stücke
Lieferzeit 21-28 Tag (e)
1+ 83.03 EUR
10+ 80.48 EUR
25+ 79.85 EUR
APT40DC120HJ index.php?option=com_docman&task=doc_download&gid=7001
APT40DC120HJ
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 40A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD30-12 10539-msd30-rev0-datasheet
MSD30-12
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Supplier Device Package: MSD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSDM75-16 MSDM75.pdf
MSDM75-16
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 75A M2-1
Current - Average Rectified (Io): 75A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD75-12 10544-msd75-rev1-datasheet
MSD75-12
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD75-08 10544-msd75-rev1-datasheet
MSD75-08
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSDM100-16 MSDM100.pdf
MSDM100-16
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD100-12 10532-msd100-rev1-datasheet
MSD100-12
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 100A M3
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD100-08 10532-msd100-rev1-datasheet
MSD100-08
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 100A M3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Package / Case: SM3-20H
Supplier Device Package: M3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD200-08 10538-msd200-rev1-datasheet
MSD200-08
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 200A M3
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC40H1201G 7411-aptdc40h1201g-datasheet
APTDC40H1201G
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 40A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD30-18 10539-msd30-rev0-datasheet
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD30-16 10539-msd30-rev0-datasheet
MSD30-16
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 30A MSD
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: MSD
Package / Case: M1
Mounting Type: QC Terminal
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.6kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT60DF120HJ APT60DF120HJ.pdf
APT60DF120HJ
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 90A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD75-18 10544-msd75-rev1-datasheet
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 75A
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.8kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSDM100-08 MSDM100.pdf
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 800V 100A M2-1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Reverse Leakage @ Vr: 500µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSDM100-12 MSDM100.pdf
MSDM100-12
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.2KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT100DL60HJ 6557-apt100dl60hj-datasheet
APT100DL60HJ
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 600V 100A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
MSDM100-18 MSDM100.pdf
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.8KV 100A M2-1
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSD75-16 10544-msd75-rev1-datasheet
MSD75-16
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.6kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC10H601G APTDC10H601G_Oct2012.pdf
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 10A SP1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 200µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10DC120HJ index.php?option=com_docman&task=doc_download&gid=6587
APT10DC120HJ
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 10A SOT227
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 1.2kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC20H601G index.php?option=com_docman&task=doc_download&gid=7408
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 600V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDF200H170G 7424-aptdf200h170g-datasheet
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.7KV 240A SP6
Base Part Number: APTDF200
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 350µA @ 1700V
Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
Current - Average Rectified (Io): 240A
Voltage - Peak Reverse (Max): 1.7kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC20H1201G index.php?option=com_docman&task=doc_download&gid=7407
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 20A SP1
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20DC120HJ index.php?option=com_docman&task=doc_download&gid=6718
APT20DC120HJ
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 20A SOT227
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 20A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC40H601G 7412-aptdc40h601g-datasheet
APTDC40H601G
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 40A SP1
Packaging: Bulk
Manufacturer: Microsemi Corporation
Base Part Number: APTDC40
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT20140 UFT200_201_202.pdf
UFT20140
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 100A
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Mounting Type: Screw Mount
Package / Case: Module
Supplier Device Package: Module
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 330 Stücke - Preis und Lieferfrist anzeigen
CPT60045 CPT60035-45_Dwg.pdf
CPT60045
Hersteller: Microsemi Corporation
Description: DIODE MODULE 45V 300A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 2A @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X51DC120J doc_details
APT2X51DC120J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 50A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X60DC120J index.php?option=com_docman&task=doc_download&gid=6855
APT2X60DC120J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X61D40J 6167-apt2x61d40j-apt2x60d40j-datasheet
APT2X61D40J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 60A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37ns
Current - Reverse Leakage @ Vr: 250µA @ 400V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
1+ 50.13 EUR
10+ 46.23 EUR
APT2X100DQ100J 123802-apt2x101dq100j-apt2x100dq100j-datasheet
APT2X100DQ100J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1KV 100A ISOTOP
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 290ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSCD60-12 MSxD60.pdf
MSCD60-12
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A D1
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Packaging: Bulk
Part Status: Obsolete
Manufacturer: Microsemi Corporation
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
1+ 34.43 EUR
MSCD60-16 MSxD60.pdf
MSCD60-16
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.6KV 60A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSKD60-16 MSxD60.pdf
MSKD60-16
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.6KV 60A D1
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X31D120J 6158-apt2x31d120j-apt2x30d120j-datasheet
APT2X31D120J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
1+ 58.98 EUR
10+ 54.41 EUR
MSKD100-08 127505-msk-a-cd100-rev1
MSKD100-08
Hersteller: Microsemi Corporation
Description: DIODE MODULE 800V 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 800V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSKD100-12 127505-msk-a-cd100-rev1
MSKD100-12
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSCD120-12 MSxD120.pdf
MSCD120-12
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 120A D1
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Current - Average Rectified (Io) (per Diode): 120A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1+ 48.44 EUR
MSCD120-16 MSxD120.pdf
MSCD120-16
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.6KV 120A D1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 6mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X150DL60J index.php?option=com_docman&task=doc_download&gid=6840
APT2X150DL60J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 600V 150A ISOTOP
Manufacturer: Microsemi Corporation
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 408ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS123100 HS12380,90,100.pdf
HS123100
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 120A HALFPAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 3mA @ 100V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT7260SM5D
UFT7260SM5D
Hersteller: Microsemi Corporation
Description: DIODE MODULE 600V 35A SM5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
Current - Average Rectified (Io) (per Diode): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25µA @ 600V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SM5
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST153100
FST153100
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V 75A TO249
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Screw Mount
Current - Reverse Leakage @ Vr: 1.5mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 940mV @ 75A
Current - Average Rectified (Io) (per Diode): 75A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST60100 FST6080-FST60100_Dwg.pdf
FST60100
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V 60A TO249
Current - Reverse Leakage @ Vr: 2mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UFT14140
UFT14140
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 70A TO249
Mounting Type: Screw Mount
Package / Case: TO-249AA
Supplier Device Package: TO-249
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FST16050 FST16035-FST16050.pdf
FST16050
Hersteller: Microsemi Corporation
Description: DIODE MODULE 50V 80A TO249
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 50V
Mounting Type: Chassis Mount
Package / Case: TO-249AA Isolated Base
Supplier Device Package: TO-249
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HS246150 HS246150(R).pdf
HS246150
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 150V 240A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 8mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Current - Average Rectified (Io): 240A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HU10260 HU100,101,102.pdf
HU10260
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 100A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CPT40145 CPT40130-CPT40145.pdf
CPT40145
Hersteller: Microsemi Corporation
Description: DIODE MODULE 45V 200A MD3CC
Supplier Device Package: MD3CC
Package / Case: MD3CC
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 570mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
HU20260
HU20260
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 200A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 130ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
1+ 181.44 EUR
CPT50060 CPT50060.pdf
CPT50060
Hersteller: Microsemi Corporation
Description: DIODE MODULE 60V 250A 2TOWER
Part Status: Obsolete
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 730mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 280 Stücke - Preis und Lieferfrist anzeigen
CPT500100
CPT500100
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V 250A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
APT2X21DC120J 6842-apt2x21dc120j-apt2x20dc120j-datasheet
APT2X21DC120J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 20A SOT227
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SDM30004 SDM300.pdf
SDM30004
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 300A MODULE
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 400V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDF400KK170G 7442-aptdf400kk170g-datasheet
APTDF400KK170G
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.7KV 480A SP6
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io) (per Diode): 480A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572ns
Current - Reverse Leakage @ Vr: 750µA @ 1700V
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: SP6
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1+ 349.15 EUR
APT2X41DC120J 6850-apt2x41dc120j-apt2x40dc120j-datasheet
APT2X41DC120J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 40A SOT227
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io) (per Diode): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X61DC120J 6855-apt2x61dc120j-apt2x60dc120j-datasheet
APT2X61DC120J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A SOT227
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
auf Bestellung 202 Stücke
Lieferzeit 21-28 Tag (e)
1+ 330.59 EUR
10+ 308.99 EUR
25+ 298.19 EUR
APTM50HM75STG index.php?option=com_docman&task=doc_download&gid=8195
APTM50HM75STG
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 500V 46A SP4
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A
Drain to Source Voltage (Vdss): 500V
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
1+ 257.81 EUR
10+ 241.7 EUR
25+ 230.42 EUR
APTM10AM02FG index.php?option=com_docman&task=doc_download&gid=8040
APTM10AM02FG
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Package / Case: SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Power - Max: 1250W
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 71 Stücke
Lieferzeit 21-28 Tag (e)
1+ 499.88 EUR
10+ 478.77 EUR
25+ 468.21 EUR
APT17F120J 6692-apt17f120j-datasheet
APT17F120J
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SOT-227
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
Power Dissipation (Max): 545W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10M11JVRU2 APT10M11JVRU2.pdf
APT10M11JVRU2
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 142A SOT227
Packaging: Bulk
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Power Dissipation (Max): 450W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10035JLL 123944-apt10035jll-c-pdf
APT10035JLL
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 25A SOT-227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20M22JVRU2 6750-apt20m22jvru2-datasheet
APT20M22JVRU2
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 97A SOT-227
Power Dissipation (Max): 450W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT100F50J 6559-apt100f50j-datasheet
APT100F50J
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 103A SOT227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT60M75JFLL 6442-apt60m75jfll-datasheet
APT60M75JFLL
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 58A SOT-227
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
1+ 121.17 EUR
APT60M75JLL 6443-apt60m75jll-datasheet
APT60M75JLL
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 58A SOT-227
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM10HM19FT3G index.php?option=com_docman&task=doc_download&gid=8057
APTM10HM19FT3G
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 100V 70A SP3
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 208W
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT33N90JCCU2 doc_details
APT33N90JCCU2
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10021JLL 5610-apt10021jll-datasheet
APT10021JLL
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1+ 177.02 EUR
APTM100H45STG index.php?option=com_docman&task=doc_download&gid=8015
APTM100H45STG
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 18A SP4
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
1+ 313.18 EUR
APTM100A18FTG index.php?option=com_docman&task=doc_download&gid=7992
APTM100A18FTG
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 43A SP4
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
Packaging: Bulk
Part Status: Active
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM10HM05FG index.php?option=com_docman&task=doc_download&gid=8054
APTM10HM05FG
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 100V 278A SP6
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM20UM03FAG index.php?option=com_docman&task=doc_download&gid=8144
APTM20UM03FAG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 580A SP6
Input Capacitance (Ciss) (Max) @ Vds: 43300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 840nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 15mA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Bulk
Power Dissipation (Max): 2270W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM100H18FG index.php?option=com_docman&task=doc_download&gid=8009
APTM100H18FG
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 43A SP6
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM100AM90FG index.php?option=com_docman&task=doc_download&gid=7998
APTM100AM90FG
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6849 8809-lds-0009-datasheet
2N6849
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12 Stücke - Preis und Lieferfrist anzeigen
2N6804 125024-lds-0113-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V TO-204AA TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120 Stücke - Preis und Lieferfrist anzeigen
2N6762 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V TO-3
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
2N6760 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 5.5A TO204AA
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
2N6766 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V TO-204AE TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20M22JVRU3 6751-apt20m22jvru3-datasheet
APT20M22JVRU3
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 97A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10M11JVRU3 APT10M11JVRU3.pdf
APT10M11JVRU3
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 142A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
1+ 71.96 EUR
APTM100DA33T1G index.php?option=com_docman&task=doc_download&gid=8002
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 23A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Package / Case: SP1
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM100SK33T1G index.php?option=com_docman&task=doc_download&gid=8019
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 23A SP1
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM120DA56T1G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM120SK56T1G APTM120SK56T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Power Dissipation (Max): 390W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM60H23FT1G APTM60H23UT1G-Rev0.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 600V 20A SP1
Packaging: Bulk
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT45M100J 7053-apt45m100j-datasheet
APT45M100J
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 45A SOT-227
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC60AM83B1G
Hersteller: Microsemi Corporation
Description: MOSFET 3N-CH 600V 36A SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A
Drain to Source Voltage (Vdss): 600V
FET Feature: Super Junction
FET Type: 3 N Channel (Phase Leg + Boost Chopper)
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC60DSKM45T1G
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC80DSK15T3G
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 800V 28A SP3
Supplier Device Package: SP3
Package / Case: SP3
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 277W
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT33N90JCCU3
APT33N90JCCU3
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6766T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC90SKM60T1G 7394-aptc90skm60t1g-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 59A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTC90DSK12T1G APTC90DSK12T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 900V 30A SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 900V
FET Feature: Super Junction
FET Type: 2 N Channel (Dual Buck Chopper)
Part Status: Obsolete
Supplier Device Package: SP1
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTM10DHM09T3G
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 139A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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