Die Produkte microsemi corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JAN1N6316CUS |
|
Microsemi Corporation |
Description: VOLTAGE REGULATOR Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Supplier Device Package: B, SQ-MELF Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 1.5V Impedance (Max) (Zzt): 17 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 4.7V Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| JANTXV1N6316D |
|
Microsemi Corporation |
Description: VOLTAGE REGULATOR Supplier Device Package: DO-35 (DO-204AH) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 1.5V Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Impedance (Max) (Zzt): 17 Ohms Power - Max: 500mW Tolerance: ±1% Voltage - Zener (Nom) (Vz): 4.7V Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
 |
MSD130-16 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3 Current - Average Rectified (Io): 130A Voltage - Peak Reverse (Max): 1.6kV Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M3 Supplier Device Package: M3 |
auf Bestellung 34 Stücke Lieferzeit 21-28 Tag (e) |
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 |
APT40DC120HJ |
|
Microsemi Corporation |
Description: BRIDGE RECT 1P 1.2KV 40A SOT227 Packaging: Bulk Part Status: Active Diode Type: Single Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 1.2kV Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A Current - Reverse Leakage @ Vr: 800µA @ 1200V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
MSD30-12 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD Packaging: Bulk Part Status: Obsolete Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2kV Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A Current - Reverse Leakage @ Vr: 200µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: M1 Supplier Device Package: MSD |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
MSDM75-16 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3P 1.6KV 75A M2-1 Current - Average Rectified (Io): 75A Voltage - Peak Reverse (Max): 1.6kV Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: M2-1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
MSD75-12 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.2KV 75A SM2 Packaging: Bulk Part Status: Obsolete Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2kV Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M2 Supplier Device Package: SM2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MSD75-08 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 800V 75A SM2 Packaging: Bulk Part Status: Obsolete Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M2 Supplier Device Package: SM2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
MSDM100-16 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3P 1.6KV 100A M2-1 Supplier Device Package: M2-1 Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 500µA @ 1600V Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A Current - Average Rectified (Io): 100A Voltage - Peak Reverse (Max): 1.6kV Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
MSD100-12 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.2KV 100A M3 Operating Temperature: -40°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 300µA @ 1200V Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A Current - Average Rectified (Io): 100A Voltage - Peak Reverse (Max): 1.2kV Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk Mounting Type: Chassis Mount Package / Case: M3 Supplier Device Package: M3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
MSD100-08 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 800V 100A M3 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 300µA @ 800V Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A Current - Average Rectified (Io): 100A Voltage - Peak Reverse (Max): 800V Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk Package / Case: SM3-20H Supplier Device Package: M3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MSD200-08 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 800V 200A M3 Packaging: Bulk Part Status: Obsolete Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A Current - Reverse Leakage @ Vr: 300µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M3 Supplier Device Package: M3 Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
APTDC40H1201G |
|
Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 1.2KV 40A SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) Current - Reverse Leakage @ Vr: 800µA @ 1200V Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A Current - Average Rectified (Io): 40A Voltage - Peak Reverse (Max): 1.2kV Technology: Silicon Carbide Schottky Diode Type: Single Phase Part Status: Active Packaging: Bulk Supplier Device Package: SP1 Package / Case: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| MSD30-18 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.8KV 30A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A Current - Average Rectified (Io): 30A Voltage - Peak Reverse (Max): 1.8kV Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk Current - Reverse Leakage @ Vr: 200µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: M1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
 |
MSD30-16 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.6KV 30A MSD Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk Supplier Device Package: MSD Package / Case: M1 Mounting Type: QC Terminal Operating Temperature: -40°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 200µA @ 1600V Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A Current - Average Rectified (Io): 30A Voltage - Peak Reverse (Max): 1.6kV |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT60DF120HJ |
|
Microsemi Corporation |
Description: BRIDGE RECT 1P 1.2KV 90A SOT227 Packaging: Bulk Part Status: Obsolete Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2kV Current - Average Rectified (Io): 90A Voltage - Forward (Vf) (Max) @ If: 3V @ 60A Current - Reverse Leakage @ Vr: 100µA @ 1200V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| MSD75-18 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.8KV 75A Packaging: Bulk Part Status: Obsolete Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1.8kV Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| MSDM100-08 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3P 800V 100A M2-1 Packaging: Bulk Part Status: Obsolete Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A Current - Reverse Leakage @ Vr: 500µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: M2-1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
 |
MSDM100-12 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3P 1.2KV 100A M2-1 Supplier Device Package: M2-1 Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 500µA @ 1200V Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A Current - Average Rectified (Io): 100A Voltage - Peak Reverse (Max): 1.2kV Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT100DL60HJ |
|
Microsemi Corporation |
Description: BRIDGE RECT 1P 600V 100A SOT227 Packaging: Bulk Part Status: Active Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 2V @ 100A Current - Reverse Leakage @ Vr: 250µA @ 600V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
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| MSDM100-18 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3P 1.8KV 100A M2-1 Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A Current - Average Rectified (Io): 100A Voltage - Peak Reverse (Max): 1.8kV Technology: Standard Diode Type: Three Phase Part Status: Obsolete Packaging: Bulk Current - Reverse Leakage @ Vr: 500µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: M2-1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MSD75-16 |
|
Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.6KV 75A SM2 Packaging: Bulk Part Status: Obsolete Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1.6kV Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M2 Supplier Device Package: SM2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| APTDC10H601G |
|
Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 600V 10A SP1 Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 200µA @ 600V Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Current - Average Rectified (Io): 10A Voltage - Peak Reverse (Max): 600V Technology: Silicon Carbide Schottky Diode Type: Single Phase Part Status: Obsolete Packaging: Bulk Supplier Device Package: SP1 Package / Case: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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APT10DC120HJ |
|
Microsemi Corporation |
Description: BRIDGE RECT 1P 1.2KV 10A SOT227 Technology: Silicon Carbide Schottky Diode Type: Single Phase Part Status: Active Packaging: Bulk Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Current - Reverse Leakage @ Vr: 200µA @ 1200V Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Current - Average Rectified (Io): 10A Voltage - Peak Reverse (Max): 1.2kV |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| APTDC20H601G |
|
Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 600V 20A SP1 Packaging: Bulk Part Status: Obsolete Diode Type: Single Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Current - Reverse Leakage @ Vr: 400µA @ 600V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| APTDF200H170G |
|
Microsemi Corporation |
Description: BRIDGE RECT 1P 1.7KV 240A SP6 Base Part Number: APTDF200 Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 350µA @ 1700V Voltage - Forward (Vf) (Max) @ If: 3V @ 200A Current - Average Rectified (Io): 240A Voltage - Peak Reverse (Max): 1.7kV Technology: Standard Diode Type: Single Phase Part Status: Active Packaging: Bulk Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| APTDC20H1201G |
|
Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 1.2KV 20A SP1 Packaging: Bulk Part Status: Active Diode Type: Single Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 1.2kV Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Current - Reverse Leakage @ Vr: 400µA @ 1200V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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APT20DC120HJ |
|
Microsemi Corporation |
Description: BRIDGE RECT 1P 1.2KV 20A SOT227 Part Status: Active Packaging: Bulk Current - Average Rectified (Io): 20A Voltage - Peak Reverse (Max): 1.2kV Technology: Silicon Carbide Schottky Diode Type: Single Phase Current - Reverse Leakage @ Vr: 400µA @ 1200V Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
APTDC40H601G |
|
Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 600V 40A SP1 Packaging: Bulk Manufacturer: Microsemi Corporation Base Part Number: APTDC40 Supplier Device Package: SP1 Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) Current - Reverse Leakage @ Vr: 800µA @ 600V Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A Current - Average Rectified (Io): 40A Voltage - Peak Reverse (Max): 600V Technology: Silicon Carbide Schottky Diode Type: Single Phase Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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UFT20140 |
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Microsemi Corporation |
Description: DIODE MODULE 400V 100A Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 50µA @ 400V Mounting Type: Screw Mount Package / Case: Module Supplier Device Package: Module |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 330 Stücke - Preis und Lieferfrist anzeigen
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CPT60045 |
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Microsemi Corporation |
Description: DIODE MODULE 45V 300A TO244AB Supplier Device Package: TO-244AB Package / Case: TO-244AB Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 2A @ 45V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A Current - Average Rectified (Io) (per Diode): 300A Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT2X51DC120J |
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Microsemi Corporation |
Description: DIODE MODULE 1.2KV 50A SOT227 Packaging: Bulk Part Status: Active Diode Configuration: 2 Independent Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 50A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1mA @ 1200V Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT2X60DC120J |
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Microsemi Corporation |
Description: DIODE MODULE 1.2KV 60A SOT227 Packaging: Bulk Part Status: Active Diode Configuration: 2 Independent Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.2mA @ 1200V Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT2X61D40J |
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Microsemi Corporation |
Description: DIODE MODULE 400V 60A ISOTOP Packaging: Tube Part Status: Active Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 37ns Current - Reverse Leakage @ Vr: 250µA @ 400V Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP® |
auf Bestellung 23 Stücke Lieferzeit 21-28 Tag (e) |
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APT2X100DQ100J |
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Microsemi Corporation |
Description: DIODE MODULE 1KV 100A ISOTOP Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 175°C Current - Reverse Leakage @ Vr: 100µA @ 1000V Reverse Recovery Time (trr): 290ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A Current - Average Rectified (Io) (per Diode): 100A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Diode Configuration: 2 Independent Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
 |
MSCD60-12 |
|
Microsemi Corporation |
Description: DIODE MODULE 1.2KV 60A D1 Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Standard Diode Configuration: 1 Pair Series Connection Packaging: Bulk Part Status: Obsolete Manufacturer: Microsemi Corporation Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5mA @ 1200V Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1 |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
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MSCD60-16 |
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Microsemi Corporation |
Description: DIODE MODULE 1.6KV 60A D1 Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5mA @ 1600V Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MSKD60-16 |
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Microsemi Corporation |
Description: DIODE MODULE 1.6KV 60A D1 Supplier Device Package: D1 Package / Case: D1 Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 5mA @ 1600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A Current - Average Rectified (Io) (per Diode): 60A Voltage - DC Reverse (Vr) (Max): 1600V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT2X31D120J |
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Microsemi Corporation |
Description: DIODE MODULE 1.2KV 30A ISOTOP Packaging: Tube Part Status: Active Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP® |
auf Bestellung 19 Stücke Lieferzeit 21-28 Tag (e) |
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MSKD100-08 |
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Microsemi Corporation |
Description: DIODE MODULE 800V 100A D1 Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5mA @ 800V Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MSKD100-12 |
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Microsemi Corporation |
Description: DIODE MODULE 1.2KV 100A D1 Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5mA @ 1200V Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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MSCD120-12 |
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Microsemi Corporation |
Description: DIODE MODULE 1.2KV 120A D1 Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation Supplier Device Package: D1 Package / Case: D1 Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 6mA @ 1200V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A Current - Average Rectified (Io) (per Diode): 120A Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Standard Diode Configuration: 1 Pair Series Connection |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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MSCD120-16 |
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Microsemi Corporation |
Description: DIODE MODULE 1.6KV 120A D1 Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 6mA @ 1600V Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT2X150DL60J |
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Microsemi Corporation |
Description: DIODE MODULE 600V 150A ISOTOP Manufacturer: Microsemi Corporation Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 175°C Current - Reverse Leakage @ Vr: 25µA @ 600V Reverse Recovery Time (trr): 408ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Average Rectified (Io) (per Diode): 150A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Diode Configuration: 2 Independent Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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HS123100 |
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Microsemi Corporation |
Description: DIODE SCHOTTKY 100V 120A HALFPAK Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A Current - Average Rectified (Io): 120A Voltage - DC Reverse (Vr) (Max): 100V Supplier Device Package: HALF-PAK Package / Case: HALF-PAK Mounting Type: Chassis Mount Capacitance @ Vr, F: 3000pF @ 5V, 1MHz Current - Reverse Leakage @ Vr: 3mA @ 100V Diode Type: Schottky Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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UFT7260SM5D | Microsemi Corporation |
Description: DIODE MODULE 600V 35A SM5 Reverse Recovery Time (trr): 75ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A Current - Average Rectified (Io) (per Diode): 35A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Diode Configuration: 1 Pair Series Connection Part Status: Obsolete Packaging: Bulk Current - Reverse Leakage @ Vr: 25µA @ 600V Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SM5 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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FST153100 | Microsemi Corporation |
Description: DIODE MODULE 100V 75A TO249 Supplier Device Package: TO-249 Package / Case: TO-249-9, TO-249AA Variant Mounting Type: Screw Mount Current - Reverse Leakage @ Vr: 1.5mA @ 100V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 940mV @ 75A Current - Average Rectified (Io) (per Diode): 75A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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FST60100 |
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Microsemi Corporation |
Description: DIODE MODULE 100V 60A TO249 Current - Reverse Leakage @ Vr: 2mA @ 100V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A Current - Average Rectified (Io) (per Diode): 60A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Packaging: Bulk Supplier Device Package: TO-249 Package / Case: TO-249-9, TO-249AA Variant Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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UFT14140 | Microsemi Corporation |
Description: DIODE MODULE 400V 70A TO249 Mounting Type: Screw Mount Package / Case: TO-249AA Supplier Device Package: TO-249 Current - Reverse Leakage @ Vr: 25µA @ 400V Reverse Recovery Time (trr): 60ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 70A Current - Average Rectified (Io) (per Diode): 70A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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FST16050 |
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Microsemi Corporation |
Description: DIODE MODULE 50V 80A TO249 Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io) (per Diode): 80A Voltage - Forward (Vf) (Max) @ If: 740mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 2mA @ 50V Mounting Type: Chassis Mount Package / Case: TO-249AA Isolated Base Supplier Device Package: TO-249 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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HS246150 |
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Microsemi Corporation |
Description: DIODE SCHOTTKY 150V 240A HALFPAK Supplier Device Package: HALF-PAK Package / Case: HALF-PAK Mounting Type: Chassis Mount Capacitance @ Vr, F: 6000pF @ 5V, 1MHz Current - Reverse Leakage @ Vr: 8mA @ 150V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A Current - Average Rectified (Io): 240A Voltage - DC Reverse (Vr) (Max): 150V Diode Type: Schottky Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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HU10260 |
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Microsemi Corporation |
Description: DIODE GEN PURP 600V 100A HALFPAK Supplier Device Package: HALF-PAK Package / Case: HALF-PAK Mounting Type: Chassis Mount Capacitance @ Vr, F: 275pF @ 10V, 1Mhz Current - Reverse Leakage @ Vr: 50µA @ 600V Reverse Recovery Time (trr): 90ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A Current - Average Rectified (Io): 100A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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CPT40145 |
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Microsemi Corporation |
Description: DIODE MODULE 45V 200A MD3CC Supplier Device Package: MD3CC Package / Case: MD3CC Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 10mA @ 45V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 570mV @ 200A Current - Average Rectified (Io) (per Diode): 200A Voltage - DC Reverse (Vr) (Max): 45V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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HU20260 | Microsemi Corporation |
Description: DIODE GEN PURP 600V 200A HALFPAK Supplier Device Package: HALF-PAK Package / Case: HALF-PAK Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 50µA @ 600V Reverse Recovery Time (trr): 130ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Current - Average Rectified (Io): 200A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Obsolete Packaging: Bulk |
auf Bestellung 3 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
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CPT50060 |
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Microsemi Corporation |
Description: DIODE MODULE 60V 250A 2TOWER Part Status: Obsolete Packaging: Bulk Voltage - DC Reverse (Vr) (Max): 60V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Supplier Device Package: Twin Tower Package / Case: Twin Tower Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 8mA @ 60V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 730mV @ 250A Current - Average Rectified (Io) (per Diode): 250A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 280 Stücke - Preis und Lieferfrist anzeigen
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CPT500100 | Microsemi Corporation |
Description: DIODE MODULE 100V 250A TO244AB Supplier Device Package: TO-244AB Package / Case: TO-244AB Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 8mA @ 100V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 900mV @ 250A Current - Average Rectified (Io) (per Diode): 250A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Schottky Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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APT2X21DC120J |
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Microsemi Corporation |
Description: DIODE MODULE 1.2KV 20A SOT227 Mounting Type: Chassis Mount Operating Temperature - Junction: -55°C ~ 175°C Current - Reverse Leakage @ Vr: 400µA @ 1200V Reverse Recovery Time (trr): 0ns Speed: No Recovery Time > 500mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Current - Average Rectified (Io) (per Diode): 20A Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Silicon Carbide Schottky Supplier Device Package: SOT-227 Package / Case: ISOTOP Diode Configuration: 2 Independent Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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SDM30004 |
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Microsemi Corporation |
Description: DIODE GEN PURP 400V 300A MODULE Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 75µA @ 400V Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APTDF400KK170G |
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Microsemi Corporation |
Description: DIODE MODULE 1.7KV 480A SP6 Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io) (per Diode): 480A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 572ns Current - Reverse Leakage @ Vr: 750µA @ 1700V Mounting Type: Chassis Mount Package / Case: LP4 Supplier Device Package: SP6 |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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APT2X41DC120J |
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Microsemi Corporation |
Description: DIODE MODULE 1.2KV 40A SOT227 Supplier Device Package: SOT-227 Package / Case: ISOTOP Mounting Type: Chassis Mount Current - Reverse Leakage @ Vr: 800µA @ 1200V Reverse Recovery Time (trr): 0ns Speed: No Recovery Time > 500mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A Current - Average Rectified (Io) (per Diode): 40A Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Silicon Carbide Schottky Diode Configuration: 2 Independent Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT2X61DC120J |
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Microsemi Corporation |
Description: DIODE MODULE 1.2KV 60A SOT227 Current - Reverse Leakage @ Vr: 1.2mA @ 1200V Reverse Recovery Time (trr): 0ns Speed: No Recovery Time > 500mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Current - Average Rectified (Io) (per Diode): 60A Voltage - DC Reverse (Vr) (Max): 1200V Diode Type: Silicon Carbide Schottky Diode Configuration: 2 Independent Part Status: Active Packaging: Bulk |
auf Bestellung 202 Stücke Lieferzeit 21-28 Tag (e) |
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APTM50HM75STG |
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Microsemi Corporation |
Description: MOSFET 4N-CH 500V 46A SP4 Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 357W Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 46A Drain to Source Voltage (Vdss): 500V FET Type: 4 N-Channel (H-Bridge) Part Status: Active Packaging: Bulk |
auf Bestellung 40 Stücke Lieferzeit 21-28 Tag (e) |
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APTM10AM02FG |
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Microsemi Corporation |
Description: MOSFET 2N-CH 100V 495A SP6 Supplier Device Package: SP6 Package / Case: SP6 Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Power - Max: 1250W Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs(th) (Max) @ Id: 4V @ 10mA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Current - Continuous Drain (Id) @ 25°C: 495A Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Bulk |
auf Bestellung 71 Stücke Lieferzeit 21-28 Tag (e) |
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APT17F120J |
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Microsemi Corporation |
Description: MOSFET N-CH 1200V 18A SOT-227 Packaging: Tube Part Status: Active Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Power Dissipation (Max): 545W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT10M11JVRU2 |
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Microsemi Corporation |
Description: MOSFET N-CH 100V 142A SOT227 Packaging: Bulk Part Status: Active Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Power Dissipation (Max): 450W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT10035JLL |
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Microsemi Corporation |
Description: MOSFET N-CH 1000V 25A SOT-227 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT20M22JVRU2 |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 97A SOT-227 Power Dissipation (Max): 450W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT100F50J |
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Microsemi Corporation |
Description: MOSFET N-CH 500V 103A SOT227 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT60M75JFLL |
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Microsemi Corporation |
Description: MOSFET N-CH 600V 58A SOT-227 Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP® Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 595W (Tc) Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube |
auf Bestellung 8 Stücke Lieferzeit 21-28 Tag (e) |
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APT60M75JLL |
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Microsemi Corporation |
Description: MOSFET N-CH 600V 58A SOT-227 Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP® Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 595W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APTM10HM19FT3G |
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Microsemi Corporation |
Description: MOSFET 4N-CH 100V 70A SP3 Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 208W Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 4 N-Channel (H-Bridge) Part Status: Active Packaging: Bulk Supplier Device Package: SP3 Package / Case: SP3 Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT33N90JCCU2 |
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Microsemi Corporation |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT10021JLL |
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Microsemi Corporation |
Description: MOSFET N-CH 1000V 37A SOT-227 Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP® Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drain to Source Voltage (Vdss): 1000V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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APTM100H45STG |
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Microsemi Corporation |
Description: MOSFET 4N-CH 1000V 18A SP4 Supplier Device Package: SP4 Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 357W Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 4 N-Channel (H-Bridge) Part Status: Active Packaging: Bulk |
auf Bestellung 8 Stücke Lieferzeit 21-28 Tag (e) |
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APTM100A18FTG |
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Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 43A SP4 Power - Max: 780W Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V Current - Continuous Drain (Id) @ 25°C: 43A FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) FET Type: 2 N-Channel (Half Bridge) Packaging: Bulk Part Status: Active Supplier Device Package: SP4 Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APTM10HM05FG |
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Microsemi Corporation |
Description: MOSFET 4N-CH 100V 278A SP6 Vgs(th) (Max) @ Id: 4V @ 5mA Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Current - Continuous Drain (Id) @ 25°C: 278A Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 4 N-Channel (H-Bridge) Part Status: Active Packaging: Bulk Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 780W Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APTM20UM03FAG |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 580A SP6 Input Capacitance (Ciss) (Max) @ Vds: 43300pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 840nC @ 10V Vgs(th) (Max) @ Id: 5V @ 15mA Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 580A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Bulk Power Dissipation (Max): 2270W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APTM100H18FG |
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Microsemi Corporation |
Description: MOSFET 4N-CH 1000V 43A SP6 Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V Current - Continuous Drain (Id) @ 25°C: 43A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 4 N-Channel (H-Bridge) Part Status: Active Packaging: Bulk Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 780W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APTM100AM90FG |
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Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 78A SP6 Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 1250W Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Drain to Source Voltage (Vdss): 1000V (1kV) FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
;%20;%203.jpg "2N6849") |
2N6849 |
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Microsemi Corporation |
Description: MOSFET P-CH 100V 6.5A TO39 Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12 Stücke - Preis und Lieferfrist anzeigen
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| 2N6804 |
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Microsemi Corporation |
Description: MOSFET P-CH 100V TO-204AA TO-3 Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120 Stücke - Preis und Lieferfrist anzeigen
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| 2N6762 |
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Microsemi Corporation |
Description: MOSFET N-CH 500V TO-3 Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Bulk Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
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| 2N6760 |
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Microsemi Corporation |
Description: MOSFET N-CH 400V 5.5A TO204AA Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
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| 2N6766 |
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Microsemi Corporation |
Description: MOSFET N-CH 200V TO-204AE TO-3 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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APT20M22JVRU3 |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 97A SOT-227 Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 450W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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APT10M11JVRU3 |
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Microsemi Corporation |
Description: MOSFET N-CH 100V 142A SOT227 Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 450W (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk |
auf Bestellung 3 Stücke Lieferzeit 21-28 Tag (e) |
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| APTM100DA33T1G |
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Microsemi Corporation |
Description: MOSFET N-CH 1000V 23A SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 390W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Package / Case: SP1 Supplier Device Package: SP1 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drain to Source Voltage (Vdss): 1000V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| APTM100SK33T1G |
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Microsemi Corporation |
Description: MOSFET N-CH 1000V 23A SP1 Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 390W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Package / Case: SP1 Supplier Device Package: SP1 Mounting Type: Chassis Mount Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drain to Source Voltage (Vdss): 1000V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| APTM120DA56T1G | Microsemi Corporation |
Description: MOSFET N-CH 1200V 18A SP1 Drain to Source Voltage (Vdss): 1200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Package / Case: SP1 Supplier Device Package: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 390W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| APTM120SK56T1G |
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Microsemi Corporation |
Description: MOSFET N-CH 1200V 18A SP1 Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V Power Dissipation (Max): 390W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| APTM60H23FT1G |
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Microsemi Corporation |
Description: MOSFET 4N-CH 600V 20A SP1 Packaging: Bulk Part Status: Active FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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APT45M100J |
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Microsemi Corporation |
Description: MOSFET N-CH 1000V 45A SOT-227 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drain to Source Voltage (Vdss): 1000V Technology: MOSFET (Metal Oxide) Part Status: Active Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 960W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| APTC60AM83B1G | Microsemi Corporation |
Description: MOSFET 3N-CH 600V 36A SP1 Supplier Device Package: SP1 Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 250W Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs(th) (Max) @ Id: 5V @ 3mA Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V Current - Continuous Drain (Id) @ 25°C: 36A Drain to Source Voltage (Vdss): 600V FET Feature: Super Junction FET Type: 3 N Channel (Phase Leg + Boost Chopper) Part Status: Obsolete Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| APTC60DSKM45T1G | Microsemi Corporation |
Description: MOSFET 2N-CH 600V 49A SP1 Packaging: Tray Part Status: Obsolete FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| APTC80DSK15T3G | Microsemi Corporation |
Description: MOSFET 2N-CH 800V 28A SP3 Supplier Device Package: SP3 Package / Case: SP3 FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 277W Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A Drain to Source Voltage (Vdss): 800V FET Feature: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
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APT33N90JCCU3 | Microsemi Corporation |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 290W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| 2N6766T1 |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 30A TO254AA Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 200V Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 150W (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| APTC90SKM60T1G |
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Microsemi Corporation |
Description: MOSFET N-CH 900V 59A SP1 Packaging: Tray Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| APTC90DSK12T1G |
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Microsemi Corporation |
Description: MOSFET 2N-CH 900V 30A SP1 Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 250W Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 30A Drain to Source Voltage (Vdss): 900V FET Feature: Super Junction FET Type: 2 N Channel (Dual Buck Chopper) Part Status: Obsolete Supplier Device Package: SP1 Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| APTM10DHM09T3G | Microsemi Corporation |
Description: MOSFET 2N-CH 100V 139A SP3 Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| JAN1N6316CUS |
|
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: VOLTAGE REGULATOR
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
| JANTXV1N6316D |
|
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
| MSD130-16 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Current - Average Rectified (Io): 130A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
auf Bestellung 34 Stücke Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Current - Average Rectified (Io): 130A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Lieferzeit 21-28 Tag (e)
|
| APT40DC120HJ |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 40A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1.2KV 40A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
| MSD30-12 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Supplier Device Package: MSD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Supplier Device Package: MSD
| MSDM75-16 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 75A M2-1
Current - Average Rectified (Io): 75A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3P 1.6KV 75A M2-1
Current - Average Rectified (Io): 75A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
| MSD75-12 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 1.2KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
| MSD75-08 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 800V 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
| MSDM100-16 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3P 1.6KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
| MSD100-12 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 100A M3
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 1.2KV 100A M3
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
| MSD100-08 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 100A M3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Package / Case: SM3-20H
Supplier Device Package: M3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 800V 100A M3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Package / Case: SM3-20H
Supplier Device Package: M3
| MSD200-08 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 200A M3
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 800V 200A M3
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Manufacturer: Microsemi Corporation
| APTDC40H1201G |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 40A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1.2KV 40A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
| MSD30-18 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 1.8KV 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
| MSD30-16 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 30A MSD
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: MSD
Package / Case: M1
Mounting Type: QC Terminal
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.6kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 1.6KV 30A MSD
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: MSD
Package / Case: M1
Mounting Type: QC Terminal
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.6kV
| APT60DF120HJ |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 90A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1.2KV 90A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
| MSD75-18 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 75A
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.8kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 1.8KV 75A
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.8kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
| MSDM100-08 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 800V 100A M2-1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Reverse Leakage @ Vr: 500µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3P 800V 100A M2-1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Reverse Leakage @ Vr: 500µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
| MSDM100-12 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.2KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3P 1.2KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
| APT100DL60HJ |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 600V 100A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 100A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
| MSDM100-18 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.8KV 100A M2-1
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3P 1.8KV 100A M2-1
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
| MSD75-16 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.6kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 3PHASE 1.6KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.6kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
| APTDC10H601G |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 10A SP1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 200µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 10A SP1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 200µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
| APT10DC120HJ |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 10A SOT227
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 1.2kV
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1.2KV 10A SOT227
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 1.2kV
| APTDC20H601G |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 600V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 600V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
| APTDF200H170G |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.7KV 240A SP6
Base Part Number: APTDF200
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 350µA @ 1700V
Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
Current - Average Rectified (Io): 240A
Voltage - Peak Reverse (Max): 1.7kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1.7KV 240A SP6
Base Part Number: APTDF200
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 350µA @ 1700V
Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
Current - Average Rectified (Io): 240A
Voltage - Peak Reverse (Max): 1.7kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
| APTDC20H1201G |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 20A SP1
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 1.2KV 20A SP1
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
| APT20DC120HJ |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 20A SOT227
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 20A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 1.2KV 20A SOT227
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 20A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
| APTDC40H601G |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 40A SP1
Packaging: Bulk
Manufacturer: Microsemi Corporation
Base Part Number: APTDC40
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1PHASE 600V 40A SP1
Packaging: Bulk
Manufacturer: Microsemi Corporation
Base Part Number: APTDC40
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
| UFT20140 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 100A
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Mounting Type: Screw Mount
Package / Case: Module
Supplier Device Package: Module
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 100A
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Mounting Type: Screw Mount
Package / Case: Module
Supplier Device Package: Module
auf Bestellung 330 Stücke - Preis und Lieferfrist anzeigen
| CPT60045 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 45V 300A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 2A @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 300A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 2A @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
| APT2X51DC120J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 50A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1.2KV 50A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
| APT2X60DC120J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1.2KV 60A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
| APT2X61D40J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 60A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37ns
Current - Reverse Leakage @ Vr: 250µA @ 400V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
auf Bestellung 23 Stücke Description: DIODE MODULE 400V 60A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37ns
Current - Reverse Leakage @ Vr: 250µA @ 400V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Lieferzeit 21-28 Tag (e)
|
| APT2X100DQ100J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1KV 100A ISOTOP
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 290ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1KV 100A ISOTOP
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 290ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Tube
| MSCD60-12 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A D1
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Packaging: Bulk
Part Status: Obsolete
Manufacturer: Microsemi Corporation
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
auf Bestellung 1 Stücke Description: DIODE MODULE 1.2KV 60A D1
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Packaging: Bulk
Part Status: Obsolete
Manufacturer: Microsemi Corporation
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
|
| MSCD60-16 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.6KV 60A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1.6KV 60A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
| MSKD60-16 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.6KV 60A D1
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1.6KV 60A D1
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
| APT2X31D120J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
auf Bestellung 19 Stücke Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Lieferzeit 21-28 Tag (e)
|
| MSKD100-08 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 800V 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 800V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 800V 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 800V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
| MSKD100-12 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
| MSCD120-12 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 120A D1
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Current - Average Rectified (Io) (per Diode): 120A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
auf Bestellung 1 Stücke Description: DIODE MODULE 1.2KV 120A D1
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Current - Average Rectified (Io) (per Diode): 120A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Lieferzeit 21-28 Tag (e)
|
| MSCD120-16 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.6KV 120A D1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 6mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1.6KV 120A D1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 6mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
| APT2X150DL60J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 600V 150A ISOTOP
Manufacturer: Microsemi Corporation
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 408ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 150A ISOTOP
Manufacturer: Microsemi Corporation
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 408ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Obsolete
Packaging: Tube
| HS123100 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 120A HALFPAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 3mA @ 100V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 100V 120A HALFPAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 3mA @ 100V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
| UFT7260SM5D |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 600V 35A SM5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
Current - Average Rectified (Io) (per Diode): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25µA @ 600V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SM5
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 600V 35A SM5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
Current - Average Rectified (Io) (per Diode): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25µA @ 600V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SM5
| FST153100 |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V 75A TO249
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Screw Mount
Current - Reverse Leakage @ Vr: 1.5mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 940mV @ 75A
Current - Average Rectified (Io) (per Diode): 75A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 75A TO249
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Screw Mount
Current - Reverse Leakage @ Vr: 1.5mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 940mV @ 75A
Current - Average Rectified (Io) (per Diode): 75A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
| FST60100 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V 60A TO249
Current - Reverse Leakage @ Vr: 2mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 60A TO249
Current - Reverse Leakage @ Vr: 2mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Chassis Mount
| UFT14140 |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 70A TO249
Mounting Type: Screw Mount
Package / Case: TO-249AA
Supplier Device Package: TO-249
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 400V 70A TO249
Mounting Type: Screw Mount
Package / Case: TO-249AA
Supplier Device Package: TO-249
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
| FST16050 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 50V 80A TO249
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 50V
Mounting Type: Chassis Mount
Package / Case: TO-249AA Isolated Base
Supplier Device Package: TO-249
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 50V 80A TO249
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 50V
Mounting Type: Chassis Mount
Package / Case: TO-249AA Isolated Base
Supplier Device Package: TO-249
| HS246150 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 150V 240A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 8mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Current - Average Rectified (Io): 240A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 150V 240A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 8mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Current - Average Rectified (Io): 240A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
| HU10260 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 100A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 100A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
| CPT40145 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 45V 200A MD3CC
Supplier Device Package: MD3CC
Package / Case: MD3CC
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 570mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 45V 200A MD3CC
Supplier Device Package: MD3CC
Package / Case: MD3CC
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 570mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
| HU20260 |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 200A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 130ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 3 Stücke Description: DIODE GEN PURP 600V 200A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 130ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
|
| CPT50060 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 60V 250A 2TOWER
Part Status: Obsolete
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 730mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 60V 250A 2TOWER
Part Status: Obsolete
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 730mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
auf Bestellung 280 Stücke - Preis und Lieferfrist anzeigen
| CPT500100 |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V 250A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 100V 250A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| APT2X21DC120J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 20A SOT227
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1.2KV 20A SOT227
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
| SDM30004 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 300A MODULE
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 400V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 300A MODULE
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 400V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Manufacturer: Microsemi Corporation
| APTDF400KK170G |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.7KV 480A SP6
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io) (per Diode): 480A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572ns
Current - Reverse Leakage @ Vr: 750µA @ 1700V
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: SP6
auf Bestellung 1 Stücke Description: DIODE MODULE 1.7KV 480A SP6
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io) (per Diode): 480A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572ns
Current - Reverse Leakage @ Vr: 750µA @ 1700V
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: SP6
Lieferzeit 21-28 Tag (e)
|
| APT2X41DC120J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 40A SOT227
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io) (per Diode): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE MODULE 1.2KV 40A SOT227
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io) (per Diode): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
| APT2X61DC120J |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A SOT227
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
auf Bestellung 202 Stücke Description: DIODE MODULE 1.2KV 60A SOT227
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| APTM50HM75STG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 500V 46A SP4
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A
Drain to Source Voltage (Vdss): 500V
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 40 Stücke Description: MOSFET 4N-CH 500V 46A SP4
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A
Drain to Source Voltage (Vdss): 500V
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| APTM10AM02FG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Package / Case: SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Power - Max: 1250W
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 71 Stücke Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Package / Case: SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Power - Max: 1250W
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| APT17F120J |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SOT-227
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
Power Dissipation (Max): 545W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1200V 18A SOT-227
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
Power Dissipation (Max): 545W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
| APT10M11JVRU2 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 142A SOT227
Packaging: Bulk
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Power Dissipation (Max): 450W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 142A SOT227
Packaging: Bulk
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Power Dissipation (Max): 450W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
| APT10035JLL |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 25A SOT-227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 25A SOT-227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
| APT20M22JVRU2 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 97A SOT-227
Power Dissipation (Max): 450W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 97A SOT-227
Power Dissipation (Max): 450W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| APT100F50J |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 103A SOT227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 103A SOT227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
| APT60M75JFLL |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 58A SOT-227
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 8 Stücke Description: MOSFET N-CH 600V 58A SOT-227
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| APT60M75JLL |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 58A SOT-227
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 58A SOT-227
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
| APTM10HM19FT3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 100V 70A SP3
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 208W
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 100V 70A SP3
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 208W
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
| APT33N90JCCU2 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
| APT10021JLL |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1 Stücke Description: MOSFET N-CH 1000V 37A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| APTM100H45STG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 18A SP4
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
auf Bestellung 8 Stücke Description: MOSFET 4N-CH 1000V 18A SP4
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| APTM100A18FTG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 43A SP4
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
Packaging: Bulk
Part Status: Active
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1000V 43A SP4
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
Packaging: Bulk
Part Status: Active
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
| APTM10HM05FG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 100V 278A SP6
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 100V 278A SP6
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
| APTM20UM03FAG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 580A SP6
Input Capacitance (Ciss) (Max) @ Vds: 43300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 840nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 15mA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Bulk
Power Dissipation (Max): 2270W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 580A SP6
Input Capacitance (Ciss) (Max) @ Vds: 43300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 840nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 15mA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Bulk
Power Dissipation (Max): 2270W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6
| APTM100H18FG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 43A SP6
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 1000V 43A SP6
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
| APTM100AM90FG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Part Status: Active
Packaging: Bulk
| 2N6849 |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can
auf Bestellung 12 Stücke - Preis und Lieferfrist anzeigen
| 2N6804 |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V TO-204AA TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V TO-204AA TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
auf Bestellung 120 Stücke - Preis und Lieferfrist anzeigen
| 2N6762 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V TO-3
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V TO-3
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
| 2N6760 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 5.5A TO204AA
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 5.5A TO204AA
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
| 2N6766 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V TO-204AE TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V TO-204AE TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE
| APT20M22JVRU3 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 97A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 97A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
| APT10M11JVRU3 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 142A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
auf Bestellung 3 Stücke Description: MOSFET N-CH 100V 142A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| APTM100DA33T1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 23A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Package / Case: SP1
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 23A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Package / Case: SP1
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
| APTM100SK33T1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 23A SP1
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 23A SP1
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
| APTM120DA56T1G |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1200V 18A SP1
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
| APTM120SK56T1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Power Dissipation (Max): 390W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1200V 18A SP1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Power Dissipation (Max): 390W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
| APTM60H23FT1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 600V 20A SP1
Packaging: Bulk
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 600V 20A SP1
Packaging: Bulk
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
| APT45M100J |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 45A SOT-227
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 45A SOT-227
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
| APTC60AM83B1G |
Hersteller: Microsemi Corporation
Description: MOSFET 3N-CH 600V 36A SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A
Drain to Source Voltage (Vdss): 600V
FET Feature: Super Junction
FET Type: 3 N Channel (Phase Leg + Boost Chopper)
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 3N-CH 600V 36A SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A
Drain to Source Voltage (Vdss): 600V
FET Feature: Super Junction
FET Type: 3 N Channel (Phase Leg + Boost Chopper)
Part Status: Obsolete
Packaging: Tray
| APTC60DSKM45T1G |
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
| APTC80DSK15T3G |
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 800V 28A SP3
Supplier Device Package: SP3
Package / Case: SP3
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 277W
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 800V 28A SP3
Supplier Device Package: SP3
Package / Case: SP3
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 277W
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
FET Feature: Standard
| APT33N90JCCU3 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
| 2N6766T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 30A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
| APTC90SKM60T1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 59A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 900V 59A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
| APTC90DSK12T1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 900V 30A SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 900V
FET Feature: Super Junction
FET Type: 2 N Channel (Dual Buck Chopper)
Part Status: Obsolete
Supplier Device Package: SP1
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 900V 30A SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 900V
FET Feature: Super Junction
FET Type: 2 N Channel (Dual Buck Chopper)
Part Status: Obsolete
Supplier Device Package: SP1
Packaging: Tray
| APTM10DHM09T3G |
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 139A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 139A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
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