Die Produkte rectron usa
Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
---|---|---|---|---|---|---|
![]() |
RM12N100LD | Rectron USA |
Description: MOSFET N-CH 100V 12A TO252-2 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 10A, 10V Power Dissipation (Max): 34.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM8205F | Rectron USA |
Description: MOSFET 2 N-CH 20V 6A SOT23-6 Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drain to Source Voltage (Vdss): 20V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Rectron USA Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Power - Max: 1.14W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 20V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 17mOhm @ 1A, 4.5V, 20mOhm @ 6A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM60P04Y | Rectron USA |
Description: MOSFET P-CHANNEL 60V 4A SOT23 Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 25V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Packaging: Tape & Reel (TR) Manufacturer: Rectron USA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
DL4742A-T |
![]() |
Rectron USA |
Description: DIODE ZENER 20V 1W MELF Part Status: Active Supplier Device Package: DO-213AB (MELF, LL41) Voltage - Zener (Nom) (Vz): 20 V Power - Max: 1 W Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
MB10S |
![]() |
Rectron USA |
Description: BRIDGE RECT GLASS 1000V .5A MDS Supplier Device Package: MD-S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 500 mA Current - Average Rectified (Io): 500 mA Voltage - Peak Reverse (Max): 1 kV Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11989932 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
EFM204-W |
![]() |
Rectron USA |
Description: DIODE SUPER FAST 200V 2A SMB Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 200V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Current - Average Rectified (Io): 2A Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
![]() |
SMF4762AV |
![]() |
Rectron USA |
Description: DIODE ZENER 82V 1W SOD-123FL Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V Power - Max: 1 W Part Status: Active Supplier Device Package: SOD-123FL Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 82 V Mounting Type: Surface Mount Package / Case: SOD-123FL Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
FM302-W |
![]() |
Rectron USA |
Description: DIODE GEN PURP GLASS 100V 3A SMC Operating Temperature - Junction: 150°C Supplier Device Package: SMC Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 1µA @ 100V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Average Rectified (Io): 3A Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Rectron USA |
auf Bestellung 6000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
![]() |
DRS306K |
![]() |
Rectron USA |
Description: BRIDGE RECT GLASS 800V 3A DK3 Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: D3K Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-ESIP Packaging: Tube Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
5.0SMCJ33A |
![]() |
Rectron USA |
Description: TVS DIODE 36.7VWM 53.3VC DO214AB Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Voltage - Clamping (Max) @ Ipp: 53.3V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 36.7V Applications: General Purpose |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
5KP190A |
![]() |
Rectron USA |
Description: TVS DIO 5KW 190V 310V UNI R-6 Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): Out of Bounds Voltage - Clamping (Max) @ Ipp: 310V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Manufacturer: Rectron USA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N4004 |
![]() |
Rectron USA |
Description: DIODE GEN PURP 1000V 1A DO-41 Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 200 nA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1701338 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
BZX84C12 |
![]() |
Rectron USA |
Description: DIODE ZENER 12V 200MW SOT-23 Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 350 mW Part Status: Active Tolerance: ±5% Packaging: Tape & Reel (TR) Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 25 Ohms Voltage - Zener (Nom) (Vz): 12 V Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4295484209 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
BZX85C82 |
![]() |
Rectron USA |
Description: DIODE ZENER 82V 1.3W DO-41 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-41G Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 62 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 368 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
SMA3Z33A |
![]() |
Rectron USA |
Description: DIODE ZENER 33V 3W SMA Impedance (Max) (Zzt): 35 Ohms Voltage - Zener (Nom) (Vz): 33 V Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 nA @ 24 V Power - Max: 3 W Part Status: Active Supplier Device Package: DO-214AC, SMA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
SMAJ13CA |
![]() |
Rectron USA |
Description: TVS DIODE 15.2VWM 21.5VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 15.2V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 400W Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 37278 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
1N4753A |
![]() |
Rectron USA |
Description: DIODE ZENER 36 V 1W DO-41G Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 36 V Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41G |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 52413 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
MMSZ4686T |
![]() |
Rectron USA |
Description: DIODE ZENER 3.9V 300MW SOD-523 Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 3.9V Tolerance: ±5% Power - Max: 300mW Current - Reverse Leakage @ Vr: 5µA @ 2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
BZX84C11W |
![]() |
Rectron USA |
Description: DIODE ZENER 11V 200MW SOT-323 Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 200 mW Supplier Device Package: SOT-323 Part Status: Active Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 11 V Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Tolerance: ±10% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N5231B |
![]() |
Rectron USA |
Description: DIODE ZENER 5.1 V 1W DO-35 Manufacturer: Rectron USA Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 17 Ohms Current - Reverse Leakage @ Vr: 5µA @ 2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 200mA Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30931 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
1N4728A |
![]() |
Rectron USA |
Description: DIODE ZENER 3.3V 1W DO-41G Current - Reverse Leakage @ Vr: 100 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41G Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13603 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
1N4732A |
![]() |
Rectron USA |
Description: DIODE ZENER 4.7 V 1W DO-41G Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41G Impedance (Max) (Zzt): 8 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 109841 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
1N4734A |
![]() |
Rectron USA |
Description: DIODE ZENER 5.6 V 1W DO-41G Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41G Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28605 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
BZX55C12 |
![]() |
Rectron USA |
Description: DIODE ZENER 12V 500MW DO-34 Part Status: Active Supplier Device Package: DO-35 Voltage - Zener (Nom) (Vz): 12 V Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Power - Max: 500 mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60087 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
DRS206K |
![]() |
Rectron USA |
Description: BRIDGE RECT GLASS 800V 2A DK3 Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: D3K Package / Case: 4-ESIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N4735A |
![]() |
Rectron USA |
Description: DIODE ZENER 6.2 V 1W DO-41G Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Zener (Nom) (Vz): 6.2 V Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41G Impedance (Max) (Zzt): 2 Ohms |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4616 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
1N4729A |
![]() |
Rectron USA |
Description: DIODE ZENER 3.6 V 1W DO-41G Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Power - Max: 1 W Part Status: Active Supplier Device Package: DO-41G Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 3.6 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 117661 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
2RS104M |
![]() |
Rectron USA |
Description: BRIDGE RECT 400V 2A RS-1M Packaging: Tube Package / Case: 4-SIP, RS-1M Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: RS-1M Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 400 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
P4FMAJ15CA |
![]() |
Rectron USA |
Description: TVS DIODE 15VWM 21.2VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N5337B |
![]() |
Rectron USA |
Description: DIODE ZENER 4.7V 5W DO-15 Power - Max: 5 W Part Status: Active Supplier Device Package: DO-15 Impedance (Max) (Zzt): 2 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 676 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
BZV55C 18BSC |
![]() |
Rectron USA |
Description: DIODE ZENER 18V 500MW LL-34 Current - Reverse Leakage @ Vr: 200 nA @ 13 V Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-80C Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 18 V Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
BZV55C 18BSB |
![]() |
Rectron USA |
Description: DIODE ZENER 18V 500MW LL-34 Current - Reverse Leakage @ Vr: 200 nA @ 13 V Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-80C Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 18 V Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
RL1N4005 |
![]() |
Rectron USA |
Description: DIODE GEN PURP 1000V 1A A-405 Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: A-405 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
RM120N30T2 | Rectron USA |
Description: MOSFET N-CH 30V 120A TO220-3 FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Rectron USA Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 120W (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
1N4002W |
![]() |
Rectron USA |
Description: DIODE GEN 1A 100V SOD-123F Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
P6KE39CA |
![]() |
Rectron USA |
Description: TVS DIODE 39VWM 53.9VC DO15 Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 53.9V Bidirectional Channels: 1 Supplier Device Package: DO-15 Voltage - Reverse Standoff (Typ): 39V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13152 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
RS406L |
![]() |
Rectron USA |
Description: BRIDGE RECT GLASS 800V 4A RS-4L Current - Reverse Leakage @ Vr: 2 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: RS-4L Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, RS-4L Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 85000 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
1.5KE36A-T |
![]() |
Rectron USA |
Description: TVS DIODE 30.8VWM 49.9VC 1.5KE Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 49.9V Packaging: Tape & Reel (TR) Voltage - Breakdown (Min): 34.2V Unidirectional Channels: 1 Supplier Device Package: 1.5KE Voltage - Reverse Standoff (Typ): 30.8V Current - Peak Pulse (10/1000µs): 30.1A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial |
auf Bestellung 100800 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
![]() |
MB4S-W |
![]() |
Rectron USA |
Description: BRIDGE RECTIFIER 400V .5 A Supplier Device Package: MD-S Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 5µA @ 400V Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA Current - Average Rectified (Io): 500mA Voltage - Peak Reverse (Max): 400V Technology: Standard Diode Type: Single Phase Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Rectron USA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
LL4148-T |
![]() |
Rectron USA |
Description: DIODE GEN PURP 100V 200MA LL34 Capacitance @ Vr, F: 4pF @ 0V, 1MHz Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: LL-34 Current - Average Rectified (Io): 500mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
DB107S-T-Z |
![]() |
Rectron USA |
Description: BRIDGE RECTIFIER 1A 1000V DB-S Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: DB-S Technology: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N5406-F |
![]() |
Rectron USA |
Description: DIODE GEN PURP 600V 3A DO-201AD Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Package / Case: DO-201AD, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 200nA @ 1000V Speed: Standard Recovery >500ns, > 200mA (Io) Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N4004-F |
![]() |
Rectron USA |
Description: DIODE GEN PU 400V 1A DO-41 AMMO Current - Reverse Leakage @ Vr: 200 nA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N4004-T |
![]() |
Rectron USA |
Description: DIODE GEN PURP 400V 1A DO-41 Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Current - Reverse Leakage @ Vr: 200 nA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7820 Stücke - Preis und Lieferfrist anzeigen
|
|
R3000 |
![]() ![]() |
Rectron USA |
Description: DIODE GEN PURP 3000V 200A DO15 Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 3000V Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA Current - Average Rectified (Io): 200mA Voltage - DC Reverse (Vr) (Max): 3000V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-15 Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole |
auf Bestellung 1000000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 1230 Stücke - Preis und Lieferfrist anzeigen
|
|
|
![]() |
SD05C |
![]() |
Rectron USA |
Description: ESD PROTECTION DIODE SOD-323 Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 14.5V Current - Peak Pulse (10/1000µs): 24A (8/20µs) Power - Peak Pulse: 350W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 200pF @ 1MHz (Max) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 183500 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
1N5817-B |
![]() |
Rectron USA |
Description: DIODE SCHOKKTY 20V 1A DO-41 Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Current - Reverse Leakage @ Vr: 200 µA @ 20 V Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 110pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
FR302-B |
![]() |
Rectron USA |
Description: DIODE FAST 100V 3A DO-201 Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
FR302-T |
![]() |
Rectron USA |
Description: DIODE FAST 100V 3A DO-201 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 65pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
RM18P100HDE | Rectron USA |
Description: MOSFET P-CH 100V 18A TO263-2 FET Type: P-Channel Power Dissipation (Max): 70W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 61nC @ 15V Part Status: Active Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 100mOhm @ 16A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 1000000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
1N5404G-T |
![]() |
Rectron USA |
Description: DIODE GEN PURP GLASS 400V 3A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Current - Reverse Leakage @ Vr: 500 nA @ 400 V Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 127963 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
RM75N60T2 | Rectron USA |
Description: MOSFET N-CHANNEL 60V 75A TO220-3 Manufacturer: Rectron USA Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 110W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 50V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM75N60LD | Rectron USA |
Description: MOSFET N-CHANNEL 60V 75A TO252-2 Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252-2 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM60N30DF | Rectron USA |
Description: MOSFET N-CHANNEL 30V 58A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 1844 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM45N60DF | Rectron USA |
Description: MOSFET N-CHANNEL 60V 45A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 30 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Packaging: Tape & Reel (TR) Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM45N600T7 | Rectron USA |
Description: MOSFET N-CH 600V 44.5A TO247 Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 100 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 431W Rds On (Max) @ Id, Vgs: 90mOhm @ 15.6A, 10V Current - Continuous Drain (Id) @ 25°C: 44.5A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
2N7002K36 | Rectron USA |
Description: MOSFET 2 N-CH 60V 250MA SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Power - Max: 350mW (Ta) FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V FET Feature: Standard Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
2N7002KD1 | Rectron USA |
Description: MOSFET N-CH 60V 350MA DFN1006-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
1SMAF2EZ10 |
![]() |
Rectron USA |
Description: DIODE ZENER 10V 2W SMAF Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 10V Power - Max: 2W Impedance (Max) (Zzt): 3.5 Ohms Current - Reverse Leakage @ Vr: 50µA @ 7.6V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 0.2mA Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Manufacturer: Rectron USA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
RM2020ES9 | Rectron USA |
Description: MOSFET N&P-CH 20V SOT363 FET Feature: Standard FET Type: N and P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Rectron USA Supplier Device Package: SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW (Ta), 800mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
1N4007-F |
![]() |
Rectron USA |
Description: DIODE GEN PURP 1000V 1A AMMO Current - Reverse Leakage @ Vr: 200 nA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N4007G-T |
![]() |
Rectron USA |
Description: DIODE GEN PURP GLASS 1000V 1A Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Diode Type: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 200 nA @ 1000 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1461086 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
1N4001-T |
![]() |
Rectron USA |
Description: DIODE GEN PURP 50V 1A DO-41 Current - Reverse Leakage @ Vr: 200 nA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Diode Type: Standard |
auf Bestellung 40000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 718 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
P4KE18-T |
![]() |
Rectron USA |
Description: TVS DIODE 14.5VWM 26.5VC DO41 Part Status: Active Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 26.5V Voltage - Breakdown (Min): 16.2V Unidirectional Channels: 1 Supplier Device Package: DO-41 Voltage - Reverse Standoff (Typ): 14.5V Current - Peak Pulse (10/1000µs): 15.1A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
auf Bestellung 40000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
![]() |
HER508-F |
![]() |
Rectron USA |
Description: DIODE HIGH EFF 1000V 5A DO-201 Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 50pF @ 4V, 1MHz Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 1000 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
1S40-T |
![]() |
Rectron USA |
Description: DIODE SCHOKKTY 40V 1A R-1 Operating Temperature - Junction: 150°C Supplier Device Package: R-1 Package / Case: R-1, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 200µA @ 40V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Current - Average Rectified (Io): 1A Diode Type: Schottky Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
|
10A6-T |
![]() |
Rectron USA |
Description: DIODE GEN PURP 600V 6A R-6 Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: R-6, Axial Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 135pF @ 4V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
1N5257B |
![]() |
Rectron USA |
Description: DIODE ZENER 33 V 1W DO-35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 27592 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
MB10F |
![]() |
Rectron USA |
Description: BRIDGE RECT GLASS 1000V .8A MB-F Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Current - Average Rectified (Io): 800 mA Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: MB-F Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 765585 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
RM80N60LD | Rectron USA |
Description: MOSFET N-CHANNEL 60V 80A TO252-2 Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252-2 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM80N60DF | Rectron USA |
Description: MOSFET N-CHANNEL 60V 80A 8DFN Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Package / Case: 8-PowerVDFN Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V Drain to Source Voltage (Vdss): 60 V Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM180N60T2 | Rectron USA |
Description: MOSFET N-CH 60V 180A TO220-3 Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
RM2A8N60S4 | Rectron USA |
Description: MOSFET N-CH 60V 2.8A SOT223-3 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 25V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drain to Source Voltage (Vdss): 60V |
auf Bestellung 1000000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
||
![]() |
P6KE68CA-T |
![]() |
Rectron USA |
Description: TVS DIODE 58.1VWM 92VC DO15 Power Line Protection: No Power - Peak Pulse: 600W Current - Peak Pulse (10/1000µs): 6.5A Voltage - Clamping (Max) @ Ipp: 92V Voltage - Breakdown (Min): 64.6V Voltage - Reverse Standoff (Typ): 58.1V Bidirectional Channels: 1 Part Status: Active Type: Zener Supplier Device Package: DO-15 Package / Case: DO-204AC, DO-15, Axial Packaging: Tape & Reel (TR) Manufacturer: Rectron USA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
![]() |
1N4004G-T |
![]() |
Rectron USA |
Description: DIODE GEN PU GLASS 400V 1A DO-41 Current - Reverse Leakage @ Vr: 200 nA @ 400 V Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 130363 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
2N7002K |
![]() ![]() ![]() |
Rectron USA |
Description: MOSFET N-CHANNEL 60V 300MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 998255 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
2N7002KA | Rectron USA |
Description: MOSFET N-CHANNEL 60V 115MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
2N7002KS6 | Rectron USA |
Description: MOSFET 2 N-CH 60V 250MA SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Power - Max: 350mW (Ta) FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA,10V FET Feature: Standard Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
1N4003-T |
![]() |
Rectron USA |
Description: DIODE GEN PURP 200V 1A DO-41 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 200 nA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Speed: Standard Recovery >500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1406 Stücke - Preis und Lieferfrist anzeigen
|
|
![]() |
RM12N650LD | Rectron USA |
Description: MOSFET N-CH 650V 11.5A TO252-2 Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252-2 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM12N650IP | Rectron USA |
Description: MOSFET N-CH 650V 11.5A TO251 Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM12N650T2 | Rectron USA |
Description: MOSFET N-CH 650V 11.5A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM12N650TI | Rectron USA |
Description: MOSFET N-CH 650V 11.5A TO220F Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 32.6W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM6N800LD | Rectron USA |
Description: MOSFET N-CHANNEL 800V 6A TO252-2 Manufacturer: Rectron USA Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V Power Dissipation (Max): 98W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-2 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM6N800IP | Rectron USA |
Description: MOSFET N-CHANNEL 800V 6A TO251 Manufacturer: Rectron USA Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V Power Dissipation (Max): 98W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Stub Leads, IPak |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM6N800HD | Rectron USA |
Description: MOSFET N-CHANNEL 800V 6A TO263-2 Manufacturer: Rectron USA Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V Power Dissipation (Max): 98W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM6N800TI | Rectron USA |
Description: MOSFET N-CHANNEL 800V 6A TO220F Manufacturer: Rectron USA Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V Power Dissipation (Max): 32.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM6N800T2 | Rectron USA |
Description: MOSFET N-CHANNEL 800V 6A TO220-3 Manufacturer: Rectron USA Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V Power Dissipation (Max): 98W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM40N600T7 | Rectron USA |
Description: IGBT TRENCH FS 600V 40A TO247-3 Part Status: Active Gate Charge: 149 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 1.12mJ (on), 610µJ (off) Td (on/off) @ 25°C: 21ns/203ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Reverse Recovery Time (trr): 151 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 306 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM4N650IP | Rectron USA |
Description: MOSFET N-CHANNEL 650V 4A TO251 Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 46W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM4N650LD | Rectron USA |
Description: MOSFET N-CHANNEL 650V 4A TO252-2 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252-2 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM4N650TI | Rectron USA |
Description: MOSFET N-CHANNEL 650V 4A TO220F Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 28.5W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM4N650T2 | Rectron USA |
Description: MOSFET N-CHANNEL 650V 4A TO220-3 Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 46W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM47N600T7 | Rectron USA |
Description: MOSFET N-CHANNEL 600V 47A TO247 Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 417W Rds On (Max) @ Id, Vgs: 81mOhm @ 15.6A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3111.9 pF @ 25 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM17N800TI | Rectron USA |
Description: MOSFET N-CHANNEL 800V 17A TO220F Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM17N800T2 | Rectron USA |
Description: MOSFET N-CH 800V 17A TO220-3 Power Dissipation (Max): 260W (Tc) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V Technology: MOSFET (Metal Oxide) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
![]() |
RM17N800HD | Rectron USA |
Description: MOSFET N-CH 800V 17A TO263-2 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-2 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
RM7N600IP | Rectron USA |
Description: MOSFET N-CHANNEL 600V 7A TO251 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 63W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 20V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Package / Case: TO-251-3 Stub Leads, IPak Supplier Device Package: TO-251 Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Tube Part Status: Active |
auf Bestellung 1000000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
||
RM7N600LD | Rectron USA |
Description: MOSFET N-CHANNEL 600V 7A TO252-2 Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 25V Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Tube Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 63W (Tc) |
auf Bestellung 1000000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
||
RM20N60LD | Rectron USA |
Description: MOSFET N-CHANNEL 60V 20A TO252-2 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 45W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 50V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 60V Packaging: Tape & Reel (TR) |
auf Bestellung 1000000 Stücke![]() Lieferzeit 21-28 Tag (e) |
|
RM12N100LD |

Hersteller: Rectron USA
Description: MOSFET N-CH 100V 12A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 10A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 12A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 10A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
RM8205F |

Hersteller: Rectron USA
Description: MOSFET 2 N-CH 20V 6A SOT23-6
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-23-6
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 1.14W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 1A, 4.5V, 20mOhm @ 6A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2 N-CH 20V 6A SOT23-6
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-23-6
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 1.14W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 1A, 4.5V, 20mOhm @ 6A, 4.5V
RM60P04Y |

Hersteller: Rectron USA
Description: MOSFET P-CHANNEL 60V 4A SOT23
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 25V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CHANNEL 60V 4A SOT23
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 25V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
DL4742A-T |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 20V 1W MELF
Part Status: Active
Supplier Device Package: DO-213AB (MELF, LL41)
Voltage - Zener (Nom) (Vz): 20 V
Power - Max: 1 W
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 20V 1W MELF
Part Status: Active
Supplier Device Package: DO-213AB (MELF, LL41)
Voltage - Zener (Nom) (Vz): 20 V
Power - Max: 1 W
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
MB10S |
![]() |

Hersteller: Rectron USA
Description: BRIDGE RECT GLASS 1000V .5A MDS
Supplier Device Package: MD-S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 500 mA
Current - Average Rectified (Io): 500 mA
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT GLASS 1000V .5A MDS
Supplier Device Package: MD-S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 500 mA
Current - Average Rectified (Io): 500 mA
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
auf Bestellung 11989932 Stücke - Preis und Lieferfrist anzeigen
EFM204-W |
![]() |

Hersteller: Rectron USA
Description: DIODE SUPER FAST 200V 2A SMB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Current - Average Rectified (Io): 2A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke Description: DIODE SUPER FAST 200V 2A SMB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Current - Average Rectified (Io): 2A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
SMF4762AV |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 82V 1W SOD-123FL
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: SOD-123FL
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Mounting Type: Surface Mount
Package / Case: SOD-123FL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 82V 1W SOD-123FL
Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: SOD-123FL
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Mounting Type: Surface Mount
Package / Case: SOD-123FL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
FM302-W |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP GLASS 100V 3A SMC
Operating Temperature - Junction: 150°C
Supplier Device Package: SMC
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
auf Bestellung 6000 Stücke Description: DIODE GEN PURP GLASS 100V 3A SMC
Operating Temperature - Junction: 150°C
Supplier Device Package: SMC
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA

Lieferzeit 21-28 Tag (e)
DRS306K |
![]() |

Hersteller: Rectron USA
Description: BRIDGE RECT GLASS 800V 3A DK3
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: D3K
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT GLASS 800V 3A DK3
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: D3K
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
5.0SMCJ33A |
![]() |

Hersteller: Rectron USA
Description: TVS DIODE 36.7VWM 53.3VC DO214AB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 53.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 36.7V
Applications: General Purpose
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 36.7VWM 53.3VC DO214AB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 53.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 36.7V
Applications: General Purpose
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
5KP190A |
![]() |

Hersteller: Rectron USA
Description: TVS DIO 5KW 190V 310V UNI R-6
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): Out of Bounds
Voltage - Clamping (Max) @ Ipp: 310V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIO 5KW 190V 310V UNI R-6
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): Out of Bounds
Voltage - Clamping (Max) @ Ipp: 310V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Manufacturer: Rectron USA
1N4004 |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP 1000V 1A DO-41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1000V 1A DO-41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 1701338 Stücke - Preis und Lieferfrist anzeigen
BZX84C12 |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 12V 200MW SOT-23
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 200MW SOT-23
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 4295484209 Stücke - Preis und Lieferfrist anzeigen
BZX85C82 |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 82V 1.3W DO-41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41G
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 62 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 82V 1.3W DO-41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-41G
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 62 V
auf Bestellung 368 Stücke - Preis und Lieferfrist anzeigen
SMA3Z33A |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 33V 3W SMA
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 24 V
Power - Max: 3 W
Part Status: Active
Supplier Device Package: DO-214AC, SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 33V 3W SMA
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 24 V
Power - Max: 3 W
Part Status: Active
Supplier Device Package: DO-214AC, SMA
SMAJ13CA |
![]() |

Hersteller: Rectron USA
Description: TVS DIODE 15.2VWM 21.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 15.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15.2VWM 21.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 15.2V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 400W
Part Status: Active
auf Bestellung 37278 Stücke - Preis und Lieferfrist anzeigen
1N4753A |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 36 V 1W DO-41G
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 36 V 1W DO-41G
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
auf Bestellung 52413 Stücke - Preis und Lieferfrist anzeigen
MMSZ4686T |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 3.9V 300MW SOD-523
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 300mW
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.9V 300MW SOD-523
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 300mW
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
BZX84C11W |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 11V 200MW SOT-323
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOT-323
Part Status: Active
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 11V 200MW SOT-323
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOT-323
Part Status: Active
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±10%
Packaging: Tape & Reel (TR)
1N5231B |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 5.1 V 1W DO-35
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 200mA
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 5.1 V 1W DO-35
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 200mA
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
auf Bestellung 30931 Stücke - Preis und Lieferfrist anzeigen
1N4728A |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 3.3V 1W DO-41G
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.3V 1W DO-41G
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 13603 Stücke - Preis und Lieferfrist anzeigen
1N4732A |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 4.7 V 1W DO-41G
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 4.7 V 1W DO-41G
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
auf Bestellung 109841 Stücke - Preis und Lieferfrist anzeigen
1N4734A |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 5.6 V 1W DO-41G
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 5.6 V 1W DO-41G
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
auf Bestellung 28605 Stücke - Preis und Lieferfrist anzeigen
BZX55C12 |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 12V 500MW DO-34
Part Status: Active
Supplier Device Package: DO-35
Voltage - Zener (Nom) (Vz): 12 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 12V 500MW DO-34
Part Status: Active
Supplier Device Package: DO-35
Voltage - Zener (Nom) (Vz): 12 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
auf Bestellung 60087 Stücke - Preis und Lieferfrist anzeigen
DRS206K |
![]() |

Hersteller: Rectron USA
Description: BRIDGE RECT GLASS 800V 2A DK3
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: D3K
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT GLASS 800V 2A DK3
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: D3K
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Packaging: Tube
1N4735A |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 6.2 V 1W DO-41G
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 2 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 6.2 V 1W DO-41G
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 2 Ohms
auf Bestellung 4616 Stücke - Preis und Lieferfrist anzeigen
1N4729A |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 3.6 V 1W DO-41G
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.6 V 1W DO-41G
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-41G
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
auf Bestellung 117661 Stücke - Preis und Lieferfrist anzeigen
2RS104M |
![]() |

Hersteller: Rectron USA
Description: BRIDGE RECT 400V 2A RS-1M
Packaging: Tube
Package / Case: 4-SIP, RS-1M
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RS-1M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 400V 2A RS-1M
Packaging: Tube
Package / Case: 4-SIP, RS-1M
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RS-1M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
P4FMAJ15CA |
![]() |

Hersteller: Rectron USA
Description: TVS DIODE 15VWM 21.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15VWM 21.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
1N5337B |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 4.7V 5W DO-15
Power - Max: 5 W
Part Status: Active
Supplier Device Package: DO-15
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 4.7V 5W DO-15
Power - Max: 5 W
Part Status: Active
Supplier Device Package: DO-15
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 676 Stücke - Preis und Lieferfrist anzeigen
BZV55C 18BSC |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 18V 500MW LL-34
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80C
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 500MW LL-34
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80C
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
BZV55C 18BSB |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 18V 500MW LL-34
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80C
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 500MW LL-34
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-80C
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
RL1N4005 |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP 1000V 1A A-405
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1000V 1A A-405
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A-405
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Tape & Reel (TR)
RM120N30T2 |

Hersteller: Rectron USA
Description: MOSFET N-CH 30V 120A TO220-3
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 120A TO220-3
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Ta)
1N4002W |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN 1A 100V SOD-123F
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN 1A 100V SOD-123F
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
P6KE39CA |
![]() |

Hersteller: Rectron USA
Description: TVS DIODE 39VWM 53.9VC DO15
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.9V
Bidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 39V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 39VWM 53.9VC DO15
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.9V
Bidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 39V
auf Bestellung 13152 Stücke - Preis und Lieferfrist anzeigen
RS406L |
![]() |

Hersteller: Rectron USA
Description: BRIDGE RECT GLASS 800V 4A RS-4L
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: RS-4L
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-4L
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT GLASS 800V 4A RS-4L
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: RS-4L
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-4L
Packaging: Tube
auf Bestellung 85000 Stücke - Preis und Lieferfrist anzeigen
1.5KE36A-T |
![]() |

Hersteller: Rectron USA
Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Packaging: Tape & Reel (TR)
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 30.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
auf Bestellung 100800 Stücke Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Packaging: Tape & Reel (TR)
Voltage - Breakdown (Min): 34.2V
Unidirectional Channels: 1
Supplier Device Package: 1.5KE
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 30.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial

Lieferzeit 21-28 Tag (e)
MB4S-W |
![]() |

Hersteller: Rectron USA
Description: BRIDGE RECTIFIER 400V .5 A
Supplier Device Package: MD-S
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - Peak Reverse (Max): 400V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECTIFIER 400V .5 A
Supplier Device Package: MD-S
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - Peak Reverse (Max): 400V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
LL4148-T |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP 100V 200MA LL34
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: LL-34
Current - Average Rectified (Io): 500mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 200MA LL34
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: LL-34
Current - Average Rectified (Io): 500mA
DB107S-T-Z |
![]() |

Hersteller: Rectron USA
Description: BRIDGE RECTIFIER 1A 1000V DB-S
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DB-S
Technology: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECTIFIER 1A 1000V DB-S
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DB-S
Technology: Standard
1N5406-F |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP 600V 3A DO-201AD
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 3A DO-201AD
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
1N4004-F |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PU 400V 1A DO-41 AMMO
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PU 400V 1A DO-41 AMMO
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
1N4004-T |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP 400V 1A DO-41
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A DO-41
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 7820 Stücke - Preis und Lieferfrist anzeigen
R3000 | ![]() |
![]() |
Hersteller: Rectron USA
Description: DIODE GEN PURP 3000V 200A DO15
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 3000V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 3000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
auf Bestellung 1000000 Stücke Description: DIODE GEN PURP 3000V 200A DO15
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 3000V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 3000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole

Lieferzeit 21-28 Tag (e)
auf Bestellung 1230 Stücke - Preis und Lieferfrist anzeigen
SD05C |
![]() |

Hersteller: Rectron USA
Description: ESD PROTECTION DIODE SOD-323
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Power - Peak Pulse: 350W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz (Max)
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: ESD PROTECTION DIODE SOD-323
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Power - Peak Pulse: 350W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz (Max)
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
auf Bestellung 183500 Stücke - Preis und Lieferfrist anzeigen
1N5817-B |
![]() |

Hersteller: Rectron USA
Description: DIODE SCHOKKTY 20V 1A DO-41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOKKTY 20V 1A DO-41
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
FR302-B |
![]() |

Hersteller: Rectron USA
Description: DIODE FAST 100V 3A DO-201
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE FAST 100V 3A DO-201
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
FR302-T |
![]() |

Hersteller: Rectron USA
Description: DIODE FAST 100V 3A DO-201
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE FAST 100V 3A DO-201
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
RM18P100HDE |
Hersteller: Rectron USA
Description: MOSFET P-CH 100V 18A TO263-2
FET Type: P-Channel
Power Dissipation (Max): 70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 15V
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1000000 Stücke Description: MOSFET P-CH 100V 18A TO263-2
FET Type: P-Channel
Power Dissipation (Max): 70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 15V
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)

Lieferzeit 21-28 Tag (e)
1N5404G-T |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP GLASS 400V 3A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP GLASS 400V 3A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 127963 Stücke - Preis und Lieferfrist anzeigen
RM75N60T2 |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 75A TO220-3
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 60V 75A TO220-3
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
RM75N60LD |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 75A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 60V 75A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
RM60N30DF |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 30V 58A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1844 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 30V 58A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1844 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
RM45N60DF |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 45A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 60V 45A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
RM45N600T7 |

Hersteller: Rectron USA
Description: MOSFET N-CH 600V 44.5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 431W
Rds On (Max) @ Id, Vgs: 90mOhm @ 15.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 44.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 44.5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 431W
Rds On (Max) @ Id, Vgs: 90mOhm @ 15.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 44.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
2N7002K36 |

Hersteller: Rectron USA
Description: MOSFET 2 N-CH 60V 250MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Power - Max: 350mW (Ta)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2 N-CH 60V 250MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Power - Max: 350mW (Ta)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
2N7002KD1 |

Hersteller: Rectron USA
Description: MOSFET N-CH 60V 350MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 350MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
1SMAF2EZ10 |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 10V 2W SMAF
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Power - Max: 2W
Impedance (Max) (Zzt): 3.5 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 7.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 0.2mA
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Manufacturer: Rectron USA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 10V 2W SMAF
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Power - Max: 2W
Impedance (Max) (Zzt): 3.5 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 7.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 0.2mA
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Manufacturer: Rectron USA
RM2020ES9 |

Hersteller: Rectron USA
Description: MOSFET N&P-CH 20V SOT363
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW (Ta), 800mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N&P-CH 20V SOT363
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW (Ta), 800mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
1N4007-F |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP 1000V 1A AMMO
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1000V 1A AMMO
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
1N4007G-T |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP GLASS 1000V 1A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP GLASS 1000V 1A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
auf Bestellung 1461086 Stücke - Preis und Lieferfrist anzeigen
1N4001-T |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP 50V 1A DO-41
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard
auf Bestellung 40000 Stücke Description: DIODE GEN PURP 50V 1A DO-41
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Standard

Lieferzeit 21-28 Tag (e)
auf Bestellung 718 Stücke - Preis und Lieferfrist anzeigen
P4KE18-T |
![]() |

Hersteller: Rectron USA
Description: TVS DIODE 14.5VWM 26.5VC DO41
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 26.5V
Voltage - Breakdown (Min): 16.2V
Unidirectional Channels: 1
Supplier Device Package: DO-41
Voltage - Reverse Standoff (Typ): 14.5V
Current - Peak Pulse (10/1000µs): 15.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke Description: TVS DIODE 14.5VWM 26.5VC DO41
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 26.5V
Voltage - Breakdown (Min): 16.2V
Unidirectional Channels: 1
Supplier Device Package: DO-41
Voltage - Reverse Standoff (Typ): 14.5V
Current - Peak Pulse (10/1000µs): 15.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
HER508-F |
![]() |

Hersteller: Rectron USA
Description: DIODE HIGH EFF 1000V 5A DO-201
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 1000 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE HIGH EFF 1000V 5A DO-201
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 1000 V
1S40-T |
![]() |
Hersteller: Rectron USA
Description: DIODE SCHOKKTY 40V 1A R-1
Operating Temperature - Junction: 150°C
Supplier Device Package: R-1
Package / Case: R-1, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke Description: DIODE SCHOKKTY 40V 1A R-1
Operating Temperature - Junction: 150°C
Supplier Device Package: R-1
Package / Case: R-1, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
10A6-T |
![]() |
Hersteller: Rectron USA
Description: DIODE GEN PURP 600V 6A R-6
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 135pF @ 4V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 6A R-6
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 135pF @ 4V, 1MHz
1N5257B |
![]() |

Hersteller: Rectron USA
Description: DIODE ZENER 33 V 1W DO-35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 33 V 1W DO-35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
auf Bestellung 27592 Stücke - Preis und Lieferfrist anzeigen
MB10F |
![]() |

Hersteller: Rectron USA
Description: BRIDGE RECT GLASS 1000V .8A MB-F
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: MB-F
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT GLASS 1000V .8A MB-F
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: MB-F
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
auf Bestellung 765585 Stücke - Preis und Lieferfrist anzeigen
RM80N60LD |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 80A TO252-2
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 60V 80A TO252-2
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
RM80N60DF |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 80A 8DFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 60V 80A 8DFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerVDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Surface Mount
RM180N60T2 |

Hersteller: Rectron USA
Description: MOSFET N-CH 60V 180A TO220-3
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 180A TO220-3
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
RM2A8N60S4 |
Hersteller: Rectron USA
Description: MOSFET N-CH 60V 2.8A SOT223-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 60V
auf Bestellung 1000000 Stücke Description: MOSFET N-CH 60V 2.8A SOT223-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 60V

Lieferzeit 21-28 Tag (e)
P6KE68CA-T |
![]() |

Hersteller: Rectron USA
Description: TVS DIODE 58.1VWM 92VC DO15
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Bidirectional Channels: 1
Part Status: Active
Type: Zener
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 58.1VWM 92VC DO15
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Bidirectional Channels: 1
Part Status: Active
Type: Zener
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
1N4004G-T |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PU GLASS 400V 1A DO-41
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PU GLASS 400V 1A DO-41
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
auf Bestellung 130363 Stücke - Preis und Lieferfrist anzeigen
2N7002K |
![]() ![]() ![]() |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 998255 Stücke - Preis und Lieferfrist anzeigen
2N7002KA |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 115MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 60V 115MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
2N7002KS6 |

Hersteller: Rectron USA
Description: MOSFET 2 N-CH 60V 250MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 350mW (Ta)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA,10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2 N-CH 60V 250MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 350mW (Ta)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA,10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
1N4003-T |
![]() |

Hersteller: Rectron USA
Description: DIODE GEN PURP 200V 1A DO-41
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A DO-41
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
auf Bestellung 1406 Stücke - Preis und Lieferfrist anzeigen
RM12N650LD |

Hersteller: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 11.5A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RM12N650IP |

Hersteller: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO251
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 11.5A TO251
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
RM12N650T2 |

Hersteller: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 11.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
RM12N650TI |

Hersteller: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32.6W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 11.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32.6W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
RM6N800LD |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO252-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 800V 6A TO252-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RM6N800IP |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO251
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251
Package / Case: TO-251-3 Stub Leads, IPak
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 800V 6A TO251
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251
Package / Case: TO-251-3 Stub Leads, IPak
RM6N800HD |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO263-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 800V 6A TO263-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RM6N800TI |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO220F
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 32.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 800V 6A TO220F
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 32.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
RM6N800T2 |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO220-3
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 800V 6A TO220-3
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
RM40N600T7 |

Hersteller: Rectron USA
Description: IGBT TRENCH FS 600V 40A TO247-3
Part Status: Active
Gate Charge: 149 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.12mJ (on), 610µJ (off)
Td (on/off) @ 25°C: 21ns/203ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 151 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 306 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT TRENCH FS 600V 40A TO247-3
Part Status: Active
Gate Charge: 149 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.12mJ (on), 610µJ (off)
Td (on/off) @ 25°C: 21ns/203ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 151 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 306 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
RM4N650IP |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO251
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 650V 4A TO251
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
RM4N650LD |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO252-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 650V 4A TO252-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
RM4N650TI |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 28.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 650V 4A TO220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 28.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
RM4N650T2 |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO220-3
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 650V 4A TO220-3
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 46W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
RM47N600T7 |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 600V 47A TO247
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W
Rds On (Max) @ Id, Vgs: 81mOhm @ 15.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3111.9 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 600V 47A TO247
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W
Rds On (Max) @ Id, Vgs: 81mOhm @ 15.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3111.9 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
RM17N800TI |

Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 800V 17A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHANNEL 800V 17A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
RM17N800T2 |

Hersteller: Rectron USA
Description: MOSFET N-CH 800V 17A TO220-3
Power Dissipation (Max): 260W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 17A TO220-3
Power Dissipation (Max): 260W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
RM17N800HD |

Hersteller: Rectron USA
Description: MOSFET N-CH 800V 17A TO263-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 17A TO263-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
RM7N600IP |
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 600V 7A TO251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active
auf Bestellung 1000000 Stücke Description: MOSFET N-CHANNEL 600V 7A TO251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active

Lieferzeit 21-28 Tag (e)
RM7N600LD |
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 600V 7A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 25V
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
auf Bestellung 1000000 Stücke Description: MOSFET N-CHANNEL 600V 7A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 25V
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)

Lieferzeit 21-28 Tag (e)
RM20N60LD |
Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 60V 20A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
auf Bestellung 1000000 Stücke Description: MOSFET N-CHANNEL 60V 20A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)