Produkte > CENTRAL SEMICONDUCTOR CORP > Alle Produkte des Herstellers CENTRAL SEMICONDUCTOR CORP (8038) > Seite 134 nach 134
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2N5061 APM TIN/LEAD | Central Semiconductor Corp |
Description: SCR 60V 800MA TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - On State (It (AV)) (Max): 510 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 10 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 60 V |
Produkt ist nicht verfügbar |
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1N5238B BK TIN/LEAD | Central Semiconductor Corp |
Description: 8.7V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 8.7 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V |
Produkt ist nicht verfügbar |
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TIP35C | Central Semiconductor Corp |
 Description: TRANS NPN 100V 25A TO-218Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W |
Produkt ist nicht verfügbar |
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BC847CW-RZ TR | Central Semiconductor Corp |
Description: TRANSISTOR-SMALL SIGNAL <=1A) Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 275 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847CW-RZ TR | Central Semiconductor Corp |
Description: TRANSISTOR-SMALL SIGNAL <=1A) Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 275 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857CW-RZ TR | Central Semiconductor Corp |
Description: TRANSISTOR-SMALL SIGNAL <=1A) Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 275 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857CW-RZ TR | Central Semiconductor Corp |
Description: TRANSISTOR-SMALL SIGNAL <=1A) Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 275 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CMJDH100 TR13 PBFREE | Central Semiconductor Corp |
Description: DIODE CUR REG 50V 12MA 580MW Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Applications: LED Driver Supplier Device Package: DFN123F Power - Max: 580mW Voltage - Anode - Cathode (Vak)(Max): 50V Regulator Current (Max): 12mA Voltage - Limiting (Max): 3.5V |
Produkt ist nicht verfügbar |
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CMJDH100 TR PBFREE | Central Semiconductor Corp |
Description: DIODE CUR REG 50V 12MA 580MW Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Applications: LED Driver Supplier Device Package: DFN123F Power - Max: 580mW Voltage - Anode - Cathode (Vak)(Max): 50V Regulator Current (Max): 12mA Voltage - Limiting (Max): 3.5V |
Produkt ist nicht verfügbar |
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CMXSH2-4LS BK PBFREE | Central Semiconductor Corp |
Description: DIODE ARR SCHOTT 40V 200MA SOT26 Packaging: Bulk Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-26 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 20 V |
Produkt ist nicht verfügbar |
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CMXSH2-4LS TR PBFREE | Central Semiconductor Corp |
Description: DIODE ARR SCHOTT 40V 200MA SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-26 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 20 V |
Produkt ist nicht verfügbar |
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TIP120 | Central Semiconductor Corp |
Description: TRANS NPN DARL 60V TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Voltage - Collector Emitter Breakdown (Max): 60 V |
Produkt ist nicht verfügbar |
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| BCX71H TR PBFREE | Central Semiconductor Corp |
Description: 45V 100MA 350MW SMD TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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| BCX71K TR PBFREE | Central Semiconductor Corp |
Description: 45V 100MA 350MW SMD TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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| 1N5236B BK TIN/LEAD | Central Semiconductor Corp |
Description: 7.5V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6 V |
Produkt ist nicht verfügbar |
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1N970B BK TIN/LEAD | Central Semiconductor Corp |
Description: 24V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V |
Produkt ist nicht verfügbar |
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1N970B TR TIN/LEAD | Central Semiconductor Corp |
Description: 24V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V |
Produkt ist nicht verfügbar |
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| 1N5237B BK TIN/LEAD | Central Semiconductor Corp |
Description: 8.2V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V |
Produkt ist nicht verfügbar |
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| CMUD6263E TR PBFREE | Central Semiconductor Corp |
Description: 70V SMD DIODE-SCHOTTKY (<1A) SIN Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 100µA Supplier Device Package: SOT-523 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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TIP3055 | Central Semiconductor Corp |
Description: TRANS NPN 100V 15A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 90 W |
Produkt ist nicht verfügbar |
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| BC337 APM PBFREE | Central Semiconductor Corp |
Description: 45V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 210MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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| BC337 APM TIN/LEAD | Central Semiconductor Corp |
Description: 45V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 210MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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BC846BT TR PBFREE | Central Semiconductor Corp |
Description: TRANS NPN 65V 0.1A SOT-523 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-523 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 250 mW |
auf Bestellung 1031 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1.5CE440A BK TIN/LEAD | Central Semiconductor Corp |
Description: 1500W TH TRANSIENT VOLTAGE SUPPR Packaging: Box Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 376V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 418V Voltage - Clamping (Max) @ Ipp: 600V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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| 1.5CE440A BK PBFREE | Central Semiconductor Corp |
Description: TVS DIODE 376VWM 600VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 376V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 418V Voltage - Clamping (Max) @ Ipp: 600V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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| 1.5CE440CA BK TIN/LEAD | Central Semiconductor Corp |
Description: 1500W TH TRANSIENT VOLTAGE SUPPR Packaging: Box Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 376V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 418V Voltage - Clamping (Max) @ Ipp: 600V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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| 1.5CE440CA BK PBFREE | Central Semiconductor Corp |
Description: TVS DIODE 376VWM 600VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 376V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 418V Voltage - Clamping (Max) @ Ipp: 600V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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CMSZ5222B TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 2.5V 500MW SOT323 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.5 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-323 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CMSZ5222B TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 2.5V 500MW SOT323 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.5 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-323 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
auf Bestellung 5199 Stücke: Lieferzeit 10-14 Tag (e) |
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CMPZ5228B TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 3.9V 350MW SOT23 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
Produkt ist nicht verfügbar |
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CMPZ5228B TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 3.9V 350MW SOT23 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
auf Bestellung 5240 Stücke: Lieferzeit 10-14 Tag (e) |
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CMJDH220 TR13 PBFREE | Central Semiconductor Corp |
Description: DIODE CUR REG 50V 25MA 580MW Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Applications: LED Driver Supplier Device Package: DFN123F Power - Max: 580mW Voltage - Anode - Cathode (Vak)(Max): 50V Regulator Current (Max): 25mA Voltage - Limiting (Max): 5.3V |
Produkt ist nicht verfügbar |
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CMJDH220 TR PBFREE | Central Semiconductor Corp |
Description: DIODE CUR REG 50V 25MA 580MW Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Applications: LED Driver Supplier Device Package: DFN123F Power - Max: 580mW Voltage - Anode - Cathode (Vak)(Max): 50V Regulator Current (Max): 25mA Voltage - Limiting (Max): 5.3V |
Produkt ist nicht verfügbar |
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| CMZ5377B TR13 PBFREE | Central Semiconductor Corp |
Description: 91V 10W SMD DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 91 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: SMC Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 69.2 V |
Produkt ist nicht verfügbar |
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MPS3392 APM PBFREE | Central Semiconductor Corp |
Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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| CS92A APM PBFREE | Central Semiconductor Corp |
Description: .8A 100V TH SCR Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
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| CS92A PBFREE | Central Semiconductor Corp |
Description: .8A 100V TH SCR Packaging: Box |
Produkt ist nicht verfügbar |
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PN4392 APM PBFREE | Central Semiconductor Corp |
Description: 2V 5V 50MA 625MW TH JFET N CHANN Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Current Drain (Id) - Max: 75 mA Supplier Device Package: TO-92-3 Power - Max: 625 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V |
Produkt ist nicht verfügbar |
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| 2N3392 APM PBFREE | Central Semiconductor Corp |
Description: 25V 500MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| P6SMB47A TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 40.2V SMD TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.3A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N6283 PBFREE | Central Semiconductor Corp |
Description: 20A 80V TH TRANSISTOR-BIPOLAR PO Packaging: Tube Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V Frequency - Transition: 4MHz Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 160 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N3707 TRE PBFREE | Central Semiconductor Corp |
Description: 30V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N3707 APM PBFREE | Central Semiconductor Corp |
Description: 30V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N3707 TIN/LEAD | Central Semiconductor Corp |
Description: 30V 200MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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2N3707 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 30V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 2N3707 APM TIN/LEAD | Central Semiconductor Corp |
Description: 30V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N5400 TRE PBFREE | Central Semiconductor Corp |
Description: 120V 600MA 625MW TH TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N5400 APM PBFREE | Central Semiconductor Corp |
Description: 120V 600MA 625MW TH TRANSISTOR-S Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N5400 PBFREE | Central Semiconductor Corp |
Description: 120V 600MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N5400 TIN/LEAD | Central Semiconductor Corp |
Description: 120V 600MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N5400 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 120V 600MA 625MW TH TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N5400 APM TIN/LEAD | Central Semiconductor Corp |
Description: 120V 600MA 625MW TH TRANSISTOR-S Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| PN5127 PBFREE | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2mA, 10V Frequency - Transition: 90MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| PN5127 TIN/LEAD | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2mA, 10V Frequency - Transition: 90MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|
|
MPS6535 PBFREE | Central Semiconductor Corp |
Description: 30V 600MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MPS6535 TIN/LEAD | Central Semiconductor Corp |
Description: 30V 600MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1N5227B BK PBFREE | Central Semiconductor Corp |
Description: 3.6V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1N5227B BK TIN/LEAD | Central Semiconductor Corp |
Description: 3.6V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N5061 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: SCR 60V 800MA TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 60 V
Description: SCR 60V 800MA TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5238B BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 8.7V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Description: 8.7V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP35C |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 100V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
Description: TRANS NPN 100V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC847CW-RZ TR |
|
Hersteller: Central Semiconductor Corp
Description: TRANSISTOR-SMALL SIGNAL <=1A)
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 275 mW
Description: TRANSISTOR-SMALL SIGNAL <=1A)
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 275 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| BC847CW-RZ TR |
|
Hersteller: Central Semiconductor Corp
Description: TRANSISTOR-SMALL SIGNAL <=1A)
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 275 mW
Description: TRANSISTOR-SMALL SIGNAL <=1A)
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 275 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 47+ | 0.37 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| BC857CW-RZ TR |
|
Hersteller: Central Semiconductor Corp
Description: TRANSISTOR-SMALL SIGNAL <=1A)
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 275 mW
Description: TRANSISTOR-SMALL SIGNAL <=1A)
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 275 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| BC857CW-RZ TR |
|
Hersteller: Central Semiconductor Corp
Description: TRANSISTOR-SMALL SIGNAL <=1A)
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 275 mW
Description: TRANSISTOR-SMALL SIGNAL <=1A)
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 275 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 47+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| CMJDH100 TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE CUR REG 50V 12MA 580MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 12mA
Voltage - Limiting (Max): 3.5V
Description: DIODE CUR REG 50V 12MA 580MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 12mA
Voltage - Limiting (Max): 3.5V
Produkt ist nicht verfügbar
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| CMJDH100 TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE CUR REG 50V 12MA 580MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 12mA
Voltage - Limiting (Max): 3.5V
Description: DIODE CUR REG 50V 12MA 580MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 12mA
Voltage - Limiting (Max): 3.5V
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| CMXSH2-4LS BK PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ARR SCHOTT 40V 200MA SOT26
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Description: DIODE ARR SCHOTT 40V 200MA SOT26
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
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| CMXSH2-4LS TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ARR SCHOTT 40V 200MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Description: DIODE ARR SCHOTT 40V 200MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
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| TIP120 |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN DARL 60V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Voltage - Collector Emitter Breakdown (Max): 60 V
Description: TRANS NPN DARL 60V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Voltage - Collector Emitter Breakdown (Max): 60 V
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| BCX71H TR PBFREE |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 350MW SMD TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: 45V 100MA 350MW SMD TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
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| BCX71K TR PBFREE |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 350MW SMD TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: 45V 100MA 350MW SMD TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
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| 1N5236B BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
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| 1N970B BK TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 24V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Description: 24V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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| 1N970B TR TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 24V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Description: 24V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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| 1N5237B BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 8.2V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Description: 8.2V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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| CMUD6263E TR PBFREE |
Hersteller: Central Semiconductor Corp
Description: 70V SMD DIODE-SCHOTTKY (<1A) SIN
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 100µA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: 70V SMD DIODE-SCHOTTKY (<1A) SIN
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 100µA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| TIP3055 |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
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| BC337 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 45V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: 45V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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| BC337 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 45V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: 45V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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| BC846BT TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 65V 0.1A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Description: TRANS NPN 65V 0.1A SOT-523
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
auf Bestellung 1031 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| 1.5CE440A BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 1500W TH TRANSIENT VOLTAGE SUPPR
Packaging: Box
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: 1500W TH TRANSIENT VOLTAGE SUPPR
Packaging: Box
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 1.5CE440A BK PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: TVS DIODE 376VWM 600VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 376VWM 600VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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| 1.5CE440CA BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 1500W TH TRANSIENT VOLTAGE SUPPR
Packaging: Box
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: 1500W TH TRANSIENT VOLTAGE SUPPR
Packaging: Box
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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| 1.5CE440CA BK PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: TVS DIODE 376VWM 600VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 376VWM 600VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 600V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMSZ5222B TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 2.5V 500MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 2.5V 500MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| CMSZ5222B TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 2.5V 500MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 2.5V 500MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 5199 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 53+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| CMPZ5228B TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 3.9V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.9V 350MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMPZ5228B TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 3.9V 350MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.9V 350MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 5240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 62+ | 0.29 EUR |
| 128+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| CMJDH220 TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE CUR REG 50V 25MA 580MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 25mA
Voltage - Limiting (Max): 5.3V
Description: DIODE CUR REG 50V 25MA 580MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 25mA
Voltage - Limiting (Max): 5.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMJDH220 TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: DIODE CUR REG 50V 25MA 580MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 25mA
Voltage - Limiting (Max): 5.3V
Description: DIODE CUR REG 50V 25MA 580MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 25mA
Voltage - Limiting (Max): 5.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMZ5377B TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 91V 10W SMD DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 69.2 V
Description: 91V 10W SMD DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 69.2 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS3392 APM PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PN4392 APM PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 2V 5V 50MA 625MW TH JFET N CHANN
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 75 mA
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Description: 2V 5V 50MA 625MW TH JFET N CHANN
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Current Drain (Id) - Max: 75 mA
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3392 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB47A TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 600W 40.2V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 40.2V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6283 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 20A 80V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
Description: 20A 80V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3707 TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3707 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3707 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3707 TRE TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3707 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5400 TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5400 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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| 2N5400 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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| 2N5400 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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| 2N5400 TRE TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2N5400 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Description: 120V 600MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PN5127 PBFREE |
Hersteller: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2mA, 10V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 12 V
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2mA, 10V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 12 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PN5127 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2mA, 10V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 12 V
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2mA, 10V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 12 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MPS6535 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 30V 600MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 30V 600MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS6535 TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 30V 600MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 30V 600MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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| 1N5227B BK PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N5227B BK TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH