Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||
---|---|---|---|---|---|---|---|---|---|
![]() |
CC-C2-B15-0322 | CoolCAD |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V FET Feature: Standard Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 5mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
|
CC-C2-B15-0322 |
![]() |
Hersteller: CoolCAD
Description: SiC Power MOSFET 1200V 12A
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V
Description: SiC Power MOSFET 1200V 12A
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 26.40 EUR |
10+ | 21.12 EUR |