Produkte > DC COMPONENTS > Alle Produkte des Herstellers DC COMPONENTS (2409) > Seite 33 nach 41
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SMAJ120A | DC Components |
Супресори |
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| SMAJ12A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ12A | DC Components |
TVS UNIDIRECT 400W 12V 5% SMA Супресори |
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|
SMAJ12CA | DC Components |
Супресори |
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| SMAJ13A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ13A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ150A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 167÷192.5V; 1.6A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 1.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ150A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 167÷192.5V; 1.6A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 1.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ150CA | DC Components |
TVS BIDIRECT 400W 150V SMA Супресори |
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| SMAJ15A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ15A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ16A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 17.8÷20.5V; 15.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ17A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...21.7V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ17A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...21.7V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ17A | DC Components |
Супресори |
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| SMAJ180A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 198÷230.4V; 1.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 180V Breakdown voltage: 198...230.4V Max. forward impulse current: 1.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ180A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 198÷230.4V; 1.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 180V Breakdown voltage: 198...230.4V Max. forward impulse current: 1.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ18A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 20÷23.3V; 13.7A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ18CA | DC Components |
Супресори |
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| SMAJ200A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 220÷256V; 1.2A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 200V Breakdown voltage: 220...256V Max. forward impulse current: 1.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ200A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 220÷256V; 1.2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 200V Breakdown voltage: 220...256V Max. forward impulse current: 1.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ20A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ20CA | DC Components |
Супресори |
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| SMAJ220A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 220V Breakdown voltage: 242...281.6V Max. forward impulse current: 1.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ22A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ22A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ22A | DC Components |
400W, 22V, 5%, DO214AC, SMA Супресори |
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| SMAJ24A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ24A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ24CA | DC Components |
Супресори |
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| SMAJ26A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ26A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ26A | DC Components |
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори |
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| SMAJ28A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ30A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ30A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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|
SMAJ30A | DC Components |
300W, 30V, 5%, UNIDIR, TVS Супресори |
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| SMAJ30CA | DC Components |
Двунапр. супрессор 30В 10%, 400Вт, SMA (SMD) Супресори |
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| SMAJ33A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...42.2V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ33CA | DC Components |
300W, 33V, 5%, BIDIR, TVS Супресори |
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| SMAJ36A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 40÷46V; 6.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
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| SMAJ36A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 40÷46V; 6.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
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| SMAJ36CA | DC Components |
Супресори |
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| SMAJ40A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...51.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ40CA | DC Components |
Двунапр. супрессор 40В 10%, 400Вт, SMA (SMD) Супресори |
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| SMAJ43A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...54.9V Max. forward impulse current: 5.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ43A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...54.9V Max. forward impulse current: 5.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ48A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 53.3÷61.3V; 5.2A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ5,0A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.25V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ5.0CA | DC Components |
Двунапр. супрессор 5В 10%, 400Вт, SMA (SMD) DO-214AC Супресори |
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| SMAJ51A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ51A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...65.2V Max. forward impulse current: 4.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ54A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 60÷69V; 4.6A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ54A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 60÷69V; 4.6A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 4.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ58A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ58A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.1V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ6,0A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.67V Max. forward impulse current: 38.8A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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| SMAJ6,5A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 7.22÷8.3V; 35.7A; bidirectional; ±5%; SMA Mounting: SMD Tolerance: ±5% Type of diode: TVS Leakage current: 1mA Max. off-state voltage: 6.5V Breakdown voltage: 7.22...8.3V Max. forward impulse current: 35.7A Kind of package: reel; tape Peak pulse power dissipation: 0.4kW Case: SMA Features of semiconductor devices: glass passivated Semiconductor structure: bidirectional |
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|
SMAJ6.0A | DC Components |
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори |
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| SMAJ6.0A-TR | DC Components |
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори |
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| SMAJ120A |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ12A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ12A |
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Hersteller: DC Components
TVS UNIDIRECT 400W 12V 5% SMA Супресори
TVS UNIDIRECT 400W 12V 5% SMA Супресори
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| SMAJ12CA |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ13A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ13A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ150A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷192.5V; 1.6A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷192.5V; 1.6A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ150A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷192.5V; 1.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 1.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷192.5V; 1.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 1.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ150CA |
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Hersteller: DC Components
TVS BIDIRECT 400W 150V SMA Супресори
TVS BIDIRECT 400W 150V SMA Супресори
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| SMAJ15A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ15A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ16A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.8÷20.5V; 15.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.8÷20.5V; 15.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ17A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ17A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ17A |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ180A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ180A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ18A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ18CA |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ200A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ200A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ20A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ20CA |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ220A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ22A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ22A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ22A |
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Hersteller: DC Components
400W, 22V, 5%, DO214AC, SMA Супресори
400W, 22V, 5%, DO214AC, SMA Супресори
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| SMAJ24A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ24A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ24CA |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ26A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ26A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ26A |
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Hersteller: DC Components
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори
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| SMAJ28A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ30A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ30A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ30A |
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Hersteller: DC Components
300W, 30V, 5%, UNIDIR, TVS Супресори
300W, 30V, 5%, UNIDIR, TVS Супресори
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| SMAJ30CA |
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Hersteller: DC Components
Двунапр. супрессор 30В 10%, 400Вт, SMA (SMD) Супресори
Двунапр. супрессор 30В 10%, 400Вт, SMA (SMD) Супресори
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| SMAJ33A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷42.2V; 7.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ33CA |
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Hersteller: DC Components
300W, 33V, 5%, BIDIR, TVS Супресори
300W, 33V, 5%, BIDIR, TVS Супресори
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| SMAJ36A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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| SMAJ36A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷46V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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| SMAJ36CA |
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Hersteller: DC Components
Супресори
Супресори
Produkt ist nicht verfügbar
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| SMAJ40A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷51.1V; 6.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ40CA |
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Hersteller: DC Components
Двунапр. супрессор 40В 10%, 400Вт, SMA (SMD) Супресори
Двунапр. супрессор 40В 10%, 400Вт, SMA (SMD) Супресори
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| SMAJ43A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ43A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 47.8÷54.9V; 5.7A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 5.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ48A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 53.3÷61.3V; 5.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 53.3÷61.3V; 5.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ5,0A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.4÷7.25V; 43.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ5.0CA |
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Hersteller: DC Components
Двунапр. супрессор 5В 10%, 400Вт, SMA (SMD) DO-214AC Супресори
Двунапр. супрессор 5В 10%, 400Вт, SMA (SMD) DO-214AC Супресори
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| SMAJ51A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ51A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.7÷65.2V; 4.9A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...65.2V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ54A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷69V; 4.6A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷69V; 4.6A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ54A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷69V; 4.6A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 60÷69V; 4.6A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ58A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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| SMAJ58A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 64.4÷74.1V; 4.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
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| SMAJ6,0A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.67÷7.67V; 38.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ6,5A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷8.3V; 35.7A; bidirectional; ±5%; SMA
Mounting: SMD
Tolerance: ±5%
Type of diode: TVS
Leakage current: 1mA
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 35.7A
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Case: SMA
Features of semiconductor devices: glass passivated
Semiconductor structure: bidirectional
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 7.22÷8.3V; 35.7A; bidirectional; ±5%; SMA
Mounting: SMD
Tolerance: ±5%
Type of diode: TVS
Leakage current: 1mA
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 35.7A
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Case: SMA
Features of semiconductor devices: glass passivated
Semiconductor structure: bidirectional
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| SMAJ6.0A |
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Hersteller: DC Components
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори
Produkt ist nicht verfügbar
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| SMAJ6.0A-TR |
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Hersteller: DC Components
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори
Cупрессор 6В 10%, 400Вт, SMA (SMD) Супресори
Produkt ist nicht verfügbar
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