Produkte > DC COMPONENTS > Alle Produkte des Herstellers DC COMPONENTS (2815) > Seite 38 nach 47
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SMA5952B | DC COMPONENTS |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 130V; SMD; SMA; reel,tape; single diode Mounting: SMD Case: SMA Kind of package: reel; tape Power dissipation: 1.5W Tolerance: ±5% Zener voltage: 130V Features of semiconductor devices: glass passivated Semiconductor structure: single diode Type of diode: Zener |
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SMA5953B | DC COMPONENTS |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 150V; SMD; SMA; reel,tape; single diode Mounting: SMD Case: SMA Kind of package: reel; tape Power dissipation: 1.5W Tolerance: ±5% Zener voltage: 150V Features of semiconductor devices: glass passivated Semiconductor structure: single diode Type of diode: Zener |
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SMA5954B | DC COMPONENTS |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 160V; SMD; SMA; reel,tape; single diode Mounting: SMD Case: SMA Kind of package: reel; tape Power dissipation: 1.5W Tolerance: ±5% Zener voltage: 160V Features of semiconductor devices: glass passivated Semiconductor structure: single diode Type of diode: Zener |
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SMA5955B | DC COMPONENTS |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 180V; SMD; SMA; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 1.5W Features of semiconductor devices: glass passivated Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Zener voltage: 180V Type of diode: Zener |
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SMA5956B | DC COMPONENTS |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 200V; SMD; SMA; reel,tape; single diode Mounting: SMD Case: SMA Kind of package: reel; tape Power dissipation: 1.5W Tolerance: ±5% Zener voltage: 200V Features of semiconductor devices: glass passivated Semiconductor structure: single diode Type of diode: Zener |
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SMAJ100A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 111÷128V; 2.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...128V Max. forward impulse current: 2.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ100A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 111÷128V; 2.5A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...128V Max. forward impulse current: 2.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ10A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 11.1÷12.8V; 23.5A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ10A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 11.1÷12.8V; 23.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ10A | DC Components |
DO-214AC Супресори |
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SMAJ110A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 122÷140.5V; 2.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 110V Breakdown voltage: 122...140.5V Max. forward impulse current: 2.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ110A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 122÷140.5V; 2.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 110V Breakdown voltage: 122...140.5V Max. forward impulse current: 2.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ11A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 12.2÷14V; 22A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.2...14V Max. forward impulse current: 22A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ11A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 12.2÷14V; 22A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.2...14V Max. forward impulse current: 22A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ120A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 133÷153V; 2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
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SMAJ120A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 133÷153V; 2A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
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| SMAJ120A | DC Components |
Супресори |
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SMAJ12A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
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SMAJ12A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 5µA |
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| SMAJ12A | DC Components |
TVS UNIDIRECT 400W 12V 5% SMA Супресори |
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SMAJ12CA | DC Components |
Супресори |
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SMAJ13A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Tolerance: ±5% |
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SMAJ14A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 15.6÷17.9V; 17.2A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.9V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ14A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 15.6÷17.9V; 17.2A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.9V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ150A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 167÷192.5V; 1.6A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 1.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ150A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 167÷192.5V; 1.6A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 1.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ150CA | DC Components |
TVS BIDIRECT 400W 150V SMA Супресори |
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SMAJ15A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ15A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...19.2V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ160A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 178÷205V; 1.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 160V Breakdown voltage: 178...205V Max. forward impulse current: 1.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ16A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 17.8÷20.5V; 15.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ170A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 189÷217.5V; 1.4A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189...217.5V Max. forward impulse current: 1.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ170A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 189÷217.5V; 1.4A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189...217.5V Max. forward impulse current: 1.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ17A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...21.7V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ17A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...21.7V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMAJ17A | DC Components |
Супресори |
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SMAJ180A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 198÷230.4V; 1.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 180V Breakdown voltage: 198...230.4V Max. forward impulse current: 1.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ180A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 198÷230.4V; 1.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 180V Breakdown voltage: 198...230.4V Max. forward impulse current: 1.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMAJ18A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 20÷23.3V; 13.7A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ18A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 20÷23.3V; 13.7A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ18CA | DC Components |
Супресори |
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SMAJ200A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 220÷256V; 1.2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 200V Breakdown voltage: 220...256V Max. forward impulse current: 1.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ20A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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| SMAJ20CA | DC Components |
Супресори |
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SMAJ210A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 231÷268.8V; 1.2A; unidirectional; ±5%; SMA Breakdown voltage: 231...268.8V Max. forward impulse current: 1.2A Peak pulse power dissipation: 0.4kW Features of semiconductor devices: glass passivated Max. off-state voltage: 210V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMA Type of diode: TVS Tolerance: ±5% Mounting: SMD |
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SMAJ210A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 231÷268.8V; 1.2A; bidirectional; ±5%; SMA Breakdown voltage: 231...268.8V Max. forward impulse current: 1.2A Peak pulse power dissipation: 0.4kW Features of semiconductor devices: glass passivated Max. off-state voltage: 210V Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 5µA Case: SMA Type of diode: TVS Tolerance: ±5% Mounting: SMD |
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| SMAJ220A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 220V Breakdown voltage: 242...281.6V Max. forward impulse current: 1.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Tolerance: ±5% Features of semiconductor devices: glass passivated |
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SMAJ22A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ22A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...28V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ22A | DC Components |
SMAJ22A 400W, 22V, 5%, DO214AC, SMA Супресори |
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SMAJ24A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ24CA | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ24CA | DC Components |
Супресори |
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SMAJ26A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ26A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMAJ26A | DC Components |
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори |
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SMAJ28A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ28A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1...35.8V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ30A | DC COMPONENTS |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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SMAJ30A | DC COMPONENTS |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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| SMA5952B |
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Hersteller: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 130V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 130V
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 130V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 130V
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: Zener
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| SMA5953B |
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Hersteller: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 150V
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 150V
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: Zener
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| SMA5954B |
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Hersteller: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 160V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 160V
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 160V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 160V
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: Zener
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| SMA5955B |
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Hersteller: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 180V; SMD; SMA; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1.5W
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Zener voltage: 180V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 180V; SMD; SMA; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1.5W
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Zener voltage: 180V
Type of diode: Zener
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| SMA5956B |
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Hersteller: DC COMPONENTS
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 200V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 200V
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 200V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.5W
Tolerance: ±5%
Zener voltage: 200V
Features of semiconductor devices: glass passivated
Semiconductor structure: single diode
Type of diode: Zener
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| SMAJ100A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 111÷128V; 2.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 111÷128V; 2.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ100A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 111÷128V; 2.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 111÷128V; 2.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...128V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ10A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.1÷12.8V; 23.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.1÷12.8V; 23.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ10A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.1÷12.8V; 23.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.1÷12.8V; 23.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ10A |
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Hersteller: DC Components
DO-214AC Супресори
DO-214AC Супресори
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| SMAJ110A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 122÷140.5V; 2.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...140.5V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 122÷140.5V; 2.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...140.5V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ110A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 122÷140.5V; 2.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...140.5V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 122÷140.5V; 2.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...140.5V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ11A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 12.2÷14V; 22A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...14V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 12.2÷14V; 22A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...14V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ11A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 12.2÷14V; 22A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...14V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 12.2÷14V; 22A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...14V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ120A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 133÷153V; 2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 133÷153V; 2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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| SMAJ120A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 133÷153V; 2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 133÷153V; 2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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| SMAJ120A |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ12A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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| SMAJ12A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.3÷15.3V; 20.1A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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| SMAJ12A |
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Hersteller: DC Components
TVS UNIDIRECT 400W 12V 5% SMA Супресори
TVS UNIDIRECT 400W 12V 5% SMA Супресори
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| SMAJ12CA |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ13A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷16.5V; 18.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ14A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.6÷17.9V; 17.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.6÷17.9V; 17.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ14A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.6÷17.9V; 17.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.6÷17.9V; 17.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ150A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷192.5V; 1.6A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷192.5V; 1.6A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ150A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷192.5V; 1.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 1.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷192.5V; 1.6A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 1.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ150CA |
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Hersteller: DC Components
TVS BIDIRECT 400W 150V SMA Супресори
TVS BIDIRECT 400W 150V SMA Супресори
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| SMAJ15A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ15A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7÷19.2V; 16.4A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ160A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 178÷205V; 1.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 1.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 178÷205V; 1.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 1.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ16A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.8÷20.5V; 15.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.8÷20.5V; 15.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ170A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189÷217.5V; 1.4A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 1.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189÷217.5V; 1.4A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 1.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ170A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189÷217.5V; 1.4A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 1.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189÷217.5V; 1.4A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...217.5V
Max. forward impulse current: 1.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ17A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ17A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.9÷21.7V; 14.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...21.7V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ17A |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ180A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ180A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 198÷230.4V; 1.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 198...230.4V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ18A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ18A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20÷23.3V; 13.7A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ18CA |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ200A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 220÷256V; 1.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 220...256V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ20A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷25.5V; 12.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ20CA |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ210A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 231÷268.8V; 1.2A; unidirectional; ±5%; SMA
Breakdown voltage: 231...268.8V
Max. forward impulse current: 1.2A
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 210V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMA
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 231÷268.8V; 1.2A; unidirectional; ±5%; SMA
Breakdown voltage: 231...268.8V
Max. forward impulse current: 1.2A
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 210V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMA
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
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| SMAJ210A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 231÷268.8V; 1.2A; bidirectional; ±5%; SMA
Breakdown voltage: 231...268.8V
Max. forward impulse current: 1.2A
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 210V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Case: SMA
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 231÷268.8V; 1.2A; bidirectional; ±5%; SMA
Breakdown voltage: 231...268.8V
Max. forward impulse current: 1.2A
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 210V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Case: SMA
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
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| SMAJ220A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 242÷281.6V; 1.1A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 242...281.6V
Max. forward impulse current: 1.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Tolerance: ±5%
Features of semiconductor devices: glass passivated
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| SMAJ22A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ22A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷28V; 11.2A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ22A |
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Hersteller: DC Components
SMAJ22A 400W, 22V, 5%, DO214AC, SMA Супресори
SMAJ22A 400W, 22V, 5%, DO214AC, SMA Супресори
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| SMAJ24A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ24CA |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷30.7V; 10.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ24CA |
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Hersteller: DC Components
Супресори
Супресори
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| SMAJ26A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ26A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.9÷33.2V; 9.5A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ26A |
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Hersteller: DC Components
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори
SMA (DO214AC), 400Вт; 26В; 9,5А Супресори
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| SMAJ28A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ28A |
![]() |
Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1÷35.8V; 8.8A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ30A |
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Hersteller: DC COMPONENTS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; bidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ30A |
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Hersteller: DC COMPONENTS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3÷38.3V; 8.3A; unidirectional; ±5%; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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