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SMCJ7.5CA-13-F SMCJ7.5CA-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 7.5VWM 12.9VC SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 116.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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14+1.51 EUR
17+1.31 EUR
100+0.9 EUR
500+0.75 EUR
1000+0.64 EUR
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SMCJ8.0A-13-F SMCJ8.0A-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 8VWM 13.6VC SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Unidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 110.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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SMCJ8.0CA-13-F SMCJ8.0CA-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 8V 13.6V SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 110.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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SMCJ8.5A-13-F SMCJ8.5A-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 8.5V 14.4V SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 14.4V
Voltage - Breakdown (Min): 9.44V
Unidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 8.5V
Current - Peak Pulse (10/1000µs): 104.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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SMCJ8.5CA-13-F SMCJ8.5CA-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 8.5VWM 14.4VC SMC
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SMCJ90A-13-F SMCJ90A-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 90VWM 146VC SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 10.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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SMCJ90CA-13-F SMCJ90CA-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 90VWM 146VC SMC
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TB0640H-13-F TB0640H-13-F Diodes Incorporated ds30360.pdf Description: THYRISTOR 58V 400A DO-214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 58V
Voltage - Breakover: 77V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Cut Tape (CT)
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TB0640M-13-F TB0640M-13-F Diodes Incorporated ds30361.pdf Description: THYRISTOR 58V 250A DO214AA
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 58V
Voltage - Breakover: 77V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 140pF
Packaging: Cut Tape (CT)
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TB0720M-13-F TB0720M-13-F Diodes Incorporated ds30361.pdf Description: THYRISTOR 65V 250A DO214AA
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TB0900H-13-F TB0900H-13-F Diodes Incorporated ds30360.pdf Description: THYRISTOR 75V 400A DO214AA
Produkt ist nicht verfügbar
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TB0900L-13-F TB0900L-13-F Diodes Incorporated ds30359.pdf Description: THYRISTOR 75V 150A DO214AA
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TB1100H-13-F TB1100H-13-F Diodes Incorporated ds30360.pdf Description: THYRISTOR 90V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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TB1100L-13-F TB1100L-13-F Diodes Incorporated ds30359.pdf Description: THYRISTOR 90V 150A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
Current - Peak Pulse (8/20µs): 150 A
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TB1100M-13-F TB1100M-13-F Diodes Incorporated ds30361.pdf Description: THYRISTOR 90V 250A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
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TB1300H-13-F TB1300H-13-F Diodes Incorporated ds30360.pdf Description: THYRISTOR 120V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 120V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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100+1.37 EUR
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TB1800H-13-F TB1800H-13-F Diodes Incorporated ds30360.pdf Description: THYRISTOR PROTECT BIDIR 100A SMB
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TB1800M-13-F TB1800M-13-F Diodes Incorporated ds30361.pdf Description: THYRISTOR 160V 250A DO214AA
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Part Status: Active
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 160V
Voltage - Breakover: 220V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 90pF
Packaging: Cut Tape (CT)
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TB2300H-13-F TB2300H-13-F Diodes Incorporated ds30360.pdf Description: THYRISTOR 190V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 190V
Voltage - Breakover: 265V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
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TB2300L-13-F TB2300L-13-F Diodes Incorporated ds30359.pdf Description: THYRISTOR 190V 150A DO214AA
Current - Peak Pulse (8/20µs): 150 A
Current - Peak Pulse (10/1000µs): 30 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 190V
Voltage - Breakover: 265V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Cut Tape (CT)
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TB2300M-13-F TB2300M-13-F Diodes Incorporated ds30361.pdf Description: THYRISTOR 190V 250A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 190V
Voltage - Breakover: 265V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 60pF
Packaging: Cut Tape (CT)
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TB2600H-13-F TB2600H-13-F Diodes Incorporated ds30360.pdf Description: THYRISTOR 220V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
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10+2.23 EUR
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500+1.2 EUR
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TB2600L-13-F TB2600L-13-F Diodes Incorporated ds30359.pdf Description: THYRISTOR 220V 150A DO214AA
Current - Peak Pulse (8/20µs): 150 A
Current - Peak Pulse (10/1000µs): 30 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Cut Tape (CT)
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TB2600M-13-F TB2600M-13-F Diodes Incorporated ds30361.pdf Description: THYRISTOR 220V 250A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
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11+2.03 EUR
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100+1.3 EUR
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TB3500H-13-F TB3500H-13-F Diodes Incorporated ds30360.pdf Description: THYRISTOR 320V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 400V
Voltage - Off State: 320V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
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25+1.64 EUR
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TB3500M-13-F TB3500M-13-F Diodes Incorporated ds30361.pdf Description: THYRISTOR 320V 250A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 400V
Voltage - Off State: 320V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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US1A-13-F US1A-13-F Diodes Incorporated ds16008.pdf Description: DIODE STANDARD 50V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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24+0.9 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.2 EUR
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US1D-13-F US1D-13-F Diodes Incorporated ds16008.pdf Description: DIODE STANDARD 200V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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35+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
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US1G-13-F US1G-13-F Diodes Incorporated ds16008.pdf Description: DIODE STANDARD 400V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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33+0.65 EUR
56+0.38 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.19 EUR
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US1J-13-F US1J-13-F Diodes Incorporated ds16008.pdf Description: DIODE STANDARD 600V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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ZXTD4591AM832TA ZXTD4591AM832TA Diodes Incorporated ZXTD4591AM832.pdf Description: TRANS NPN/PNP 40V 2A/1.5A 8-MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 2A, 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 8-MLP (3x2)
Part Status: Obsolete
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ZXTDC3M832TA ZXTDC3M832TA Diodes Incorporated ZXTDC3M832.pdf Description: TRANS NPN/PNP 50V/40V 4A/3A 8MLP
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ZXTDE4M832TA ZXTDE4M832TA Diodes Incorporated ZXTDE4M832.pdf Description: TRANS NPN/PNP 80V/70V 8MLP
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ZXMC3AM832TA ZXMC3AM832TA Diodes Incorporated ZXMC3AM832.pdf Description: MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
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ZXMC6A09DN8TA ZXMC6A09DN8TA Diodes Incorporated ZXMC6A09DN8.pdf Description: MOSFET N/P-CH 60V 3.9A/3.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V, 1580pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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ZXMN10A08DN8TA ZXMN10A08DN8TA Diodes Incorporated ZXMN10A08DN8.pdf Description: MOSFET 2N-CH 100V 1.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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ZXTDC3M832TA ZXTDC3M832TA Diodes Incorporated ZXTDC3M832.pdf Description: TRANS NPN/PNP 50V/40V 4A/3A 8MLP
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ZXTDE4M832TA ZXTDE4M832TA Diodes Incorporated ZXTDE4M832.pdf Description: TRANS NPN/PNP 80V/70V 8MLP
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ZXMC3AM832TA ZXMC3AM832TA Diodes Incorporated ZXMC3AM832.pdf Description: MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
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ZXMC6A09DN8TA ZXMC6A09DN8TA Diodes Incorporated ZXMC6A09DN8.pdf Description: MOSFET N/P-CH 60V 3.9A/3.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V, 1580pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXMN10A08DN8TA ZXMN10A08DN8TA Diodes Incorporated ZXMN10A08DN8.pdf Description: MOSFET 2N-CH 100V 1.6A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
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SMAJ5.0A-13-F SMAJ5.0A-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 5VWM 9.2VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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B0530WS-7-F B0530WS-7-F Diodes Incorporated B0530WS.pdf Description: DIODE SCHOTTKY 30V 500MA SOD323
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 58pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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B0540WS-7 B0540WS-7 Diodes Incorporated B0540WS.pdf Description: DIODE SCHOTTKY 40V 500MA SOD323
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
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SD107WS-7-F SD107WS-7-F Diodes Incorporated SD107WS.pdf Description: DIODE SCHOTTKY 30V 100MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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SDM100K30L-7 SDM100K30L-7 Diodes Incorporated SDM100K30L.pdf Description: DIODE SCHOTTKY 30V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 485 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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BAV199W-7 BAV199W-7 Diodes Incorporated ds30462.pdf Description: DIODE ARRAY GP 85V 140MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BZT52C51S-7 BZT52C51S-7 Diodes Incorporated ds30566.pdf Description: DIODE ZENER 51V 200MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
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BZT52C9V1T-7 BZT52C9V1T-7 Diodes Incorporated ds30502.pdf Description: DIODE ZENER 9.1V 300MW SOD523
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
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BC807-16W-7 BC807-16W-7 Diodes Incorporated BC807-16W_-25W_-40W.pdf Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC807-25W-7 BC807-25W-7 Diodes Incorporated BC807-16W_-25W_-40W.pdf Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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BC807-40W-7 BC807-40W-7 Diodes Incorporated BC807-16W_-25W_-40W.pdf Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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BC817-16W-7 BC817-16W-7 Diodes Incorporated ds30575.pdf Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC817-25W-7 BC817-25W-7 Diodes Incorporated ds30575.pdf Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BC817-40W-7 BC817-40W-7 Diodes Incorporated ds30575.pdf Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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DFLT17A-7 DFLT17A-7 Diodes Incorporated DFLT5V0A_DFLT220A.pdf Description: TVS DIODE 17VWM 27.6VC PWRDI 123
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 225W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: PowerDI™ 123
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 8.15A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
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DRDN005W-7 DRDN005W-7 Diodes Incorporated ds30573.pdf Description: TRANS NPN 80V 0.5A SOT363
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DRDN010W-7 DRDN010W-7 Diodes Incorporated ds30573.pdf Description: TRANS NPN 18V 1A SOT363
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DRDNB16W-7 DRDNB16W-7 Diodes Incorporated ds30573.pdf Description: TRANS PREBIAS NPN 50V SOT363
Resistors Included: R1 and R2
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Produkt ist nicht verfügbar
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DRDNB26W-7 DRDNB26W-7 Diodes Incorporated ds30573.pdf Description: TRANS PREBIAS NPN/DIODE SOT363
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SMCJ7.5CA-13-F ds19003.pdf
SMCJ7.5CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 7.5VWM 12.9VC SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.33V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 116.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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14+1.51 EUR
17+1.31 EUR
100+0.9 EUR
500+0.75 EUR
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SMCJ8.0A-13-F ds19003.pdf
SMCJ8.0A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 8VWM 13.6VC SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Unidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 110.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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9+2.43 EUR
11+1.99 EUR
100+1.55 EUR
500+1.31 EUR
1000+1.07 EUR
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SMCJ8.0CA-13-F ds19003.pdf
SMCJ8.0CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 8V 13.6V SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 13.6V
Voltage - Breakdown (Min): 8.89V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 8V
Current - Peak Pulse (10/1000µs): 110.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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8+2.64 EUR
10+2.15 EUR
100+1.68 EUR
500+1.42 EUR
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SMCJ8.5A-13-F ds19003.pdf
SMCJ8.5A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 8.5V 14.4V SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 14.4V
Voltage - Breakdown (Min): 9.44V
Unidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 8.5V
Current - Peak Pulse (10/1000µs): 104.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 62241 Stücke:
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6+3.64 EUR
10+2.32 EUR
100+1.57 EUR
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SMCJ8.5CA-13-F ds19003.pdf
SMCJ8.5CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 8.5VWM 14.4VC SMC
auf Bestellung 3979 Stücke:
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SMCJ90A-13-F ds19003.pdf
SMCJ90A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 90VWM 146VC SMC
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Unidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 90V
Current - Peak Pulse (10/1000µs): 10.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 285151 Stücke:
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17+1.27 EUR
20+1.09 EUR
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SMCJ90CA-13-F ds19003.pdf
SMCJ90CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 90VWM 146VC SMC
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TB0640H-13-F ds30360.pdf
TB0640H-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 58V 400A DO-214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 58V
Voltage - Breakover: 77V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 200pF
Packaging: Cut Tape (CT)
auf Bestellung 14900 Stücke:
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7+3.14 EUR
11+2 EUR
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TB0640M-13-F ds30361.pdf
TB0640M-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 58V 250A DO214AA
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 58V
Voltage - Breakover: 77V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 140pF
Packaging: Cut Tape (CT)
auf Bestellung 1514 Stücke:
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11+1.93 EUR
14+1.58 EUR
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TB0720M-13-F ds30361.pdf
TB0720M-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 65V 250A DO214AA
auf Bestellung 2736 Stücke:
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TB0900H-13-F ds30360.pdf
TB0900H-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 75V 400A DO214AA
Produkt ist nicht verfügbar
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TB0900L-13-F ds30359.pdf
TB0900L-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 75V 150A DO214AA
auf Bestellung 16320 Stücke:
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10+2.18 EUR
11+1.95 EUR
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TB1100H-13-F ds30360.pdf
TB1100H-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 90V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Part Status: Active
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 3666 Stücke:
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8+2.62 EUR
13+1.64 EUR
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TB1100L-13-F ds30359.pdf
TB1100L-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 90V 150A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
Current - Peak Pulse (8/20µs): 150 A
auf Bestellung 3013 Stücke:
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8+2.98 EUR
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TB1100M-13-F ds30361.pdf
TB1100M-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 90V 250A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 90pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
auf Bestellung 2777 Stücke:
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7+3.14 EUR
11+1.99 EUR
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TB1300H-13-F ds30360.pdf
TB1300H-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 120V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 120V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 2097 Stücke:
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7+3.22 EUR
11+2.05 EUR
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TB1800H-13-F ds30360.pdf
TB1800H-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR PROTECT BIDIR 100A SMB
auf Bestellung 1793 Stücke:
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TB1800M-13-F ds30361.pdf
TB1800M-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 160V 250A DO214AA
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Part Status: Active
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 160V
Voltage - Breakover: 220V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 90pF
Packaging: Cut Tape (CT)
auf Bestellung 4972 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.15 EUR
11+1.93 EUR
100+1.5 EUR
500+1.24 EUR
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TB2300H-13-F ds30360.pdf
TB2300H-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 190V
Voltage - Breakover: 265V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
auf Bestellung 6879 Stücke:
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AnzahlPrivatkunde
10+2.28 EUR
12+1.88 EUR
100+1.46 EUR
500+1.24 EUR
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TB2300L-13-F ds30359.pdf
TB2300L-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 150A DO214AA
Current - Peak Pulse (8/20µs): 150 A
Current - Peak Pulse (10/1000µs): 30 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 190V
Voltage - Breakover: 265V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Cut Tape (CT)
auf Bestellung 5776 Stücke:
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TB2300M-13-F ds30361.pdf
TB2300M-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 190V 250A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Peak Pulse (8/20µs): 250 A
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 190V
Voltage - Breakover: 265V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 60pF
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
13+1.64 EUR
100+1.27 EUR
500+1.08 EUR
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TB2600H-13-F ds30360.pdf
TB2600H-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 220V 400A DO214AA
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 80pF
Packaging: Cut Tape (CT)
auf Bestellung 9566 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.23 EUR
12+1.83 EUR
100+1.42 EUR
500+1.2 EUR
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TB2600L-13-F ds30359.pdf
TB2600L-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 220V 150A DO214AA
Current - Peak Pulse (8/20µs): 150 A
Current - Peak Pulse (10/1000µs): 30 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3.5 V
Voltage - Off State: 220V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Cut Tape (CT)
auf Bestellung 2188 Stücke:
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12+1.88 EUR
14+1.55 EUR
100+1.2 EUR
500+1.02 EUR
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TB2600M-13-F ds30361.pdf
TB2600M-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 220V 250A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
13+1.67 EUR
100+1.3 EUR
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TB3500H-13-F ds30360.pdf
TB3500H-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 320V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 80pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 400V
Voltage - Off State: 320V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
11+1.95 EUR
25+1.64 EUR
50+1.45 EUR
100+1.3 EUR
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TB3500M-13-F ds30361.pdf
TB3500M-13-F
Hersteller: Diodes Incorporated
Description: THYRISTOR 320V 250A DO214AA
Packaging: Cut Tape (CT)
Capacitance: 60pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 400V
Voltage - Off State: 320V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 250 A
Produkt ist nicht verfügbar
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US1A-13-F ds16008.pdf
US1A-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 50V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 266856 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.2 EUR
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US1D-13-F ds16008.pdf
US1D-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 17338 Stücke:
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AnzahlPrivatkunde
22+0.96 EUR
35+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
2000+0.23 EUR
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US1G-13-F ds16008.pdf
US1G-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 25287 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
56+0.38 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.19 EUR
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US1J-13-F ds16008.pdf
US1J-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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ZXTD4591AM832TA ZXTD4591AM832.pdf
ZXTD4591AM832TA
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 40V 2A/1.5A 8-MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 2A, 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 8-MLP (3x2)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ZXTDC3M832TA ZXTDC3M832.pdf
ZXTDC3M832TA
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 50V/40V 4A/3A 8MLP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ZXTDE4M832TA ZXTDE4M832.pdf
ZXTDE4M832TA
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 80V/70V 8MLP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ZXMC3AM832TA ZXMC3AM832.pdf
ZXMC3AM832TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ZXMC6A09DN8TA ZXMC6A09DN8.pdf
ZXMC6A09DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.9A/3.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V, 1580pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ZXMN10A08DN8TA ZXMN10A08DN8.pdf
ZXMN10A08DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 1.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
500+0.99 EUR
1000+0.9 EUR
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ZXTDC3M832TA ZXTDC3M832.pdf
ZXTDC3M832TA
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 50V/40V 4A/3A 8MLP
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ZXTDE4M832TA ZXTDE4M832.pdf
ZXTDE4M832TA
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 80V/70V 8MLP
Produkt ist nicht verfügbar
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ZXMC3AM832TA ZXMC3AM832.pdf
ZXMC3AM832TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
Produkt ist nicht verfügbar
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ZXMC6A09DN8TA ZXMC6A09DN8.pdf
ZXMC6A09DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.9A/3.7A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V, 1580pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 182 Stücke:
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6+3.64 EUR
10+3.03 EUR
100+2.42 EUR
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ZXMN10A08DN8TA ZXMN10A08DN8.pdf
ZXMN10A08DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 1.6A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
auf Bestellung 1019 Stücke:
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7+3 EUR
12+1.89 EUR
100+1.26 EUR
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SMAJ5.0A-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ5.0A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 9.2VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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B0530WS-7-F B0530WS.pdf
B0530WS-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 500MA SOD323
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 58pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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B0540WS-7 B0540WS.pdf
B0540WS-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 500MA SOD323
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Produkt ist nicht verfügbar
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SD107WS-7-F SD107WS.pdf
SD107WS-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 100MA SOD323
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 513000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
6000+0.13 EUR
15000+0.12 EUR
21000+0.12 EUR
30000+0.11 EUR
75000+0.11 EUR
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SDM100K30L-7 SDM100K30L.pdf
SDM100K30L-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 485 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Produkt ist nicht verfügbar
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BAV199W-7 ds30462.pdf
BAV199W-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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BZT52C51S-7 ds30566.pdf
BZT52C51S-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 51V 200MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
auf Bestellung 114000 Stücke:
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3000+0.056 EUR
6000+0.054 EUR
9000+0.048 EUR
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BZT52C9V1T-7 ds30502.pdf
BZT52C9V1T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 300MW SOD523
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±6%
Packaging: Tape & Reel (TR)
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.063 EUR
6000+0.06 EUR
9000+0.038 EUR
150000+0.036 EUR
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BC807-16W-7 BC807-16W_-25W_-40W.pdf
BC807-16W-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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BC807-25W-7 BC807-16W_-25W_-40W.pdf
BC807-25W-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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BC807-40W-7 BC807-16W_-25W_-40W.pdf
BC807-40W-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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BC817-16W-7 ds30575.pdf
BC817-16W-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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BC817-25W-7 ds30575.pdf
BC817-25W-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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BC817-40W-7 ds30575.pdf
BC817-40W-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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DFLT17A-7 DFLT5V0A_DFLT220A.pdf
DFLT17A-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC PWRDI 123
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 225W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: PowerDI™ 123
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 8.15A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.19 EUR
30000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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DRDN005W-7 ds30573.pdf
DRDN005W-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT363
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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DRDN010W-7 ds30573.pdf
DRDN010W-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 18V 1A SOT363
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
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DRDNB16W-7 ds30573.pdf
DRDNB16W-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT363
Resistors Included: R1 and R2
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Produkt ist nicht verfügbar
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DRDNB26W-7 ds30573.pdf
DRDNB26W-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/DIODE SOT363
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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