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DCX68-13 DCX68-13 Diodes Incorporated ds31163.pdf Description: TRANS NPN 20V 1A SOT89-3
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DCX69-13 DCX69-13 Diodes Incorporated ds31264.pdf Description: TRANS PNP 20V 1A SOT89-3
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DCX69-16-13 DCX69-16-13 Diodes Incorporated ds31264.pdf Description: TRANS PNP 20V 1A SOT89-3
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DLPD3V3LC-7 DLPD3V3LC-7 Diodes Incorporated ds30662.pdf Description: TVS DIODE 3.3VWM 22VC SOT26
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DMN2005DLP4K-7 DMN2005DLP4K-7 Diodes Incorporated ds30801.pdf Description: MOSFET 2N-CH 20V 0.3A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMN2005LP4K-7 DMN2005LP4K-7 Diodes Incorporated ds30799.pdf Description: MOSFET N-CH 20V 200MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 900mV @ 100µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
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DMN3150L-7 DMN3150L-7 Diodes Incorporated DMN3150L.pdf Description: MOSFET N-CH 28V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 28 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V
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DMN32D2LFB4-7 DMN32D2LFB4-7 Diodes Incorporated ds31124.pdf Description: MOSFET N-CH 30V 300MA 3DFN
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
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DMP2004K-7 DMP2004K-7 Diodes Incorporated ds30933.pdf Description: MOSFET P-CH 20V 600MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
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DMP2004VK-7 DMP2004VK-7 Diodes Incorporated ds30916.pdf Description: MOSFET 2P-CH 20V 0.53A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 530mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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DMP2104LP-7 DMP2104LP-7 Diodes Incorporated ds31091.pdf Description: MOSFET P-CH 20V 1.5A 3DFN1411
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1411-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V
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DMP2215L-7 DMP2215L-7 Diodes Incorporated DMP2215L.pdf Description: MOSFET P-CH 20V 2.7A SOT23-3
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.08W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
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DMP2240UDM-7 DMP2240UDM-7 Diodes Incorporated ds31197.pdf Description: MOSFET 2P-CH 20V 2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
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DPLS350E-13 DPLS350E-13 Diodes Incorporated ds31230.pdf Description: TRANS PNP 50V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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DPLS350Y-13 DPLS350Y-13 Diodes Incorporated ds31149.pdf Description: TRANS PNP 50V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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DXT2222A-13 DXT2222A-13 Diodes Incorporated DXT2222A.pdf Description: TRANS NPN 40V 0.6A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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DXT2907A-13 DXT2907A-13 Diodes Incorporated ds30944.pdf Description: TRANS PNP 60V 0.6A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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DZT5401-13 DZT5401-13 Diodes Incorporated DZT5401.pdf Description: TRANS PNP 150V 0.6A SOT-223-3
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
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25000+0.23 EUR
62500+0.21 EUR
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DZT5551-13 DZT5551-13 Diodes Incorporated ds31219.pdf Description: TRANS NPN 160V 0.6A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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SBR40U200CT SBR40U200CT Diodes Incorporated SBR40U200CT.pdf Description: DIODE ARR SBR 200V 20A TO220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
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50+5.82 EUR
100+4.99 EUR
500+4.44 EUR
1000+3.8 EUR
2000+3.58 EUR
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SBR60A150CT SBR60A150CT Diodes Incorporated SBR60A150CT.pdf Description: DIODE ARR SBR 150V 30A TO220-3
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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T12S5-7 T12S5-7 Diodes Incorporated ds31112.pdf Description: TVS DIODE 12VWM 28VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 300W
Power Line Protection: No
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T3V3S5-7 T3V3S5-7 Diodes Incorporated ds31112.pdf Description: TVS DIODE 3.3VWM 16VC SOD523
Power Line Protection: No
Power - Peak Pulse: 220W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 85pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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3000+0.18 EUR
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T5V0S5-7 T5V0S5-7 Diodes Incorporated ds31112.pdf Description: TVS DIODE 5V 27V SOD523
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2DB1132R-13 2DB1132R-13 Diodes Incorporated 2DB1132P_Q_R.pdf Description: TRANS PNP 32V 1A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 190MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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29+0.73 EUR
100+0.46 EUR
500+0.35 EUR
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2DB1188R-13 2DB1188R-13 Diodes Incorporated 2DB1188P_Q_R.pdf Description: TRANS PNP 32V 2A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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17+1.27 EUR
27+0.79 EUR
100+0.51 EUR
500+0.38 EUR
1000+0.35 EUR
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2DD1766R-13 2DD1766R-13 Diodes Incorporated ds31167.pdf Description: TRANS NPN 32V 2A SOT89-3
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25+0.86 EUR
29+0.73 EUR
100+0.54 EUR
500+0.43 EUR
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2DD2150R-13 2DD2150R-13 Diodes Incorporated 2DD2150R.pdf Description: TRANS NPN 20V 3A SOT89-3
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3.0SMCJ20A-13 3.0SMCJ20A-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 20VWM 32.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 62.6A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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DCX53-13 DCX53-13 Diodes Incorporated ds31160.pdf Description: TRANS PNP 80V 1A SOT89-3
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DCX53-16-13 DCX53-16-13 Diodes Incorporated ds31160.pdf Description: TRANS PNP 80V 1A SOT89-3
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DCX56-13 DCX56-13 Diodes Incorporated ds31161.pdf Description: TRANS NPN 80V 1A SOT-89-3
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
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DCX56-16-13 DCX56-16-13 Diodes Incorporated ds31161.pdf Description: TRANS NPN 80V 1A SOT-89-3
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
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DCX68-13 DCX68-13 Diodes Incorporated ds31163.pdf Description: TRANS NPN 20V 1A SOT89-3
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DCX69-13 DCX69-13 Diodes Incorporated ds31264.pdf Description: TRANS PNP 20V 1A SOT89-3
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DCX69-16-13 DCX69-16-13 Diodes Incorporated ds31264.pdf Description: TRANS PNP 20V 1A SOT89-3
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DLPD3V3LC-7 DLPD3V3LC-7 Diodes Incorporated ds30662.pdf Description: TVS DIODE 3.3VWM 22VC SOT26
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DMN2005DLP4K-7 DMN2005DLP4K-7 Diodes Incorporated ds30801.pdf Description: MOSFET 2N-CH 20V 0.3A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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DMN2005LP4K-7 DMN2005LP4K-7 Diodes Incorporated ds30799.pdf Description: MOSFET N-CH 20V 200MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 900mV @ 100µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
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DMN3150L-7 DMN3150L-7 Diodes Incorporated DMN3150L.pdf Description: MOSFET N-CH 28V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 28 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V
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DMN32D2LFB4-7 DMN32D2LFB4-7 Diodes Incorporated ds31124.pdf Description: MOSFET N-CH 30V 300MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
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DMP2004K-7 DMP2004K-7 Diodes Incorporated ds30933.pdf Description: MOSFET P-CH 20V 600MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
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DMP2004VK-7 DMP2004VK-7 Diodes Incorporated ds30916.pdf Description: MOSFET 2P-CH 20V 0.53A SOT563
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 530mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
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DMP2104LP-7 DMP2104LP-7 Diodes Incorporated ds31091.pdf Description: MOSFET P-CH 20V 1.5A 3DFN1411
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1411-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V
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500+0.33 EUR
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DMP2215L-7 DMP2215L-7 Diodes Incorporated DMP2215L.pdf Description: MOSFET P-CH 20V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.08W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMP2240UDM-7 DMP2240UDM-7 Diodes Incorporated ds31197.pdf Description: MOSFET 2P-CH 20V 2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
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DPLS350E-13 DPLS350E-13 Diodes Incorporated ds31230.pdf Description: TRANS PNP 50V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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DPLS350Y-13 DPLS350Y-13 Diodes Incorporated ds31149.pdf Description: TRANS PNP 50V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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DXT2222A-13 DXT2222A-13 Diodes Incorporated DXT2222A.pdf Description: TRANS NPN 40V 0.6A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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DXT2907A-13 DXT2907A-13 Diodes Incorporated ds30944.pdf Description: TRANS PNP 60V 0.6A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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DZT5401-13 DZT5401-13 Diodes Incorporated DZT5401.pdf Description: TRANS PNP 150V 0.6A SOT-223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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DZT5551-13 DZT5551-13 Diodes Incorporated ds31219.pdf Description: TRANS NPN 160V 0.6A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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T3V3S5-7 T3V3S5-7 Diodes Incorporated ds31112.pdf Description: TVS DIODE 3.3VWM 16VC SOD523
Power Line Protection: No
Power - Peak Pulse: 220W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 85pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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40+0.52 EUR
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T5V0S5-7 T5V0S5-7 Diodes Incorporated ds31112.pdf Description: TVS DIODE 5V 27V SOD523
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2DD2150R-13 2DD2150R-13 Diodes Incorporated 2DD2150R.pdf Description: TRANS NPN 20V 3A SOT89-3
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DCX53-13 DCX53-13 Diodes Incorporated ds31160.pdf Description: TRANS PNP 80V 1A SOT89-3
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DCX53-16-13 DCX53-16-13 Diodes Incorporated ds31160.pdf Description: TRANS PNP 80V 1A SOT89-3
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DCX69-13 DCX69-13 Diodes Incorporated ds31264.pdf Description: TRANS PNP 20V 1A SOT89-3
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DCX69-16-13 DCX69-16-13 Diodes Incorporated ds31264.pdf Description: TRANS PNP 20V 1A SOT89-3
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DLPD3V3LC-7 DLPD3V3LC-7 Diodes Incorporated ds30662.pdf Description: TVS DIODE 3.3VWM 22VC SOT26
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DCX68-13 ds31163.pdf
DCX68-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 1A SOT89-3
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DCX69-13 ds31264.pdf
DCX69-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT89-3
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DCX69-16-13 ds31264.pdf
DCX69-16-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT89-3
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DLPD3V3LC-7 ds30662.pdf
DLPD3V3LC-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 22VC SOT26
Produkt ist nicht verfügbar
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DMN2005DLP4K-7 ds30801.pdf
DMN2005DLP4K-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.3A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
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3000+0.21 EUR
9000+0.2 EUR
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DMN2005LP4K-7 ds30799.pdf
DMN2005LP4K-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 200MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 900mV @ 100µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
3000+0.19 EUR
6000+0.17 EUR
9000+0.15 EUR
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DMN3150L-7 DMN3150L.pdf
DMN3150L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 28V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 28 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V
auf Bestellung 20000 Stücke:
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AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
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DMN32D2LFB4-7 ds31124.pdf
DMN32D2LFB4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 300MA 3DFN
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 132000 Stücke:
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3000+0.24 EUR
6000+0.23 EUR
9000+0.21 EUR
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DMP2004K-7 ds30933.pdf
DMP2004K-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 600MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
auf Bestellung 366000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
15000+0.1 EUR
21000+0.099 EUR
30000+0.094 EUR
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DMP2004VK-7 ds30916.pdf
DMP2004VK-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.53A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 530mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.24 EUR
6000+0.23 EUR
9000+0.2 EUR
15000+0.19 EUR
30000+0.18 EUR
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DMP2104LP-7 ds31091.pdf
DMP2104LP-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 1.5A 3DFN1411
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1411-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V
Produkt ist nicht verfügbar
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DMP2215L-7 DMP2215L.pdf
DMP2215L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.7A SOT23-3
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.08W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.2 EUR
6000+0.18 EUR
9000+0.17 EUR
21000+0.15 EUR
75000+0.14 EUR
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DMP2240UDM-7 ds31197.pdf
DMP2240UDM-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 2A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.33 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.27 EUR
30000+0.26 EUR
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DPLS350E-13 ds31230.pdf
DPLS350E-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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DPLS350Y-13 ds31149.pdf
DPLS350Y-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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DXT2222A-13 DXT2222A.pdf
DXT2222A-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.21 EUR
5000+0.19 EUR
7500+0.18 EUR
12500+0.17 EUR
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DXT2907A-13 ds30944.pdf
DXT2907A-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 0.6A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.26 EUR
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DZT5401-13 DZT5401.pdf
DZT5401-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 0.6A SOT-223-3
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
auf Bestellung 100530 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.3 EUR
5000+0.27 EUR
7500+0.26 EUR
12500+0.25 EUR
17500+0.24 EUR
25000+0.23 EUR
62500+0.21 EUR
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DZT5551-13 ds31219.pdf
DZT5551-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR40U200CT SBR40U200CT.pdf
SBR40U200CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 200V 20A TO220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
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3+7.35 EUR
50+5.82 EUR
100+4.99 EUR
500+4.44 EUR
1000+3.8 EUR
2000+3.58 EUR
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SBR60A150CT SBR60A150CT.pdf
SBR60A150CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 150V 30A TO220-3
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 9 Stücke:
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3+7.28 EUR
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T12S5-7 ds31112.pdf
T12S5-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 28VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 300W
Power Line Protection: No
Produkt ist nicht verfügbar
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T3V3S5-7 ds31112.pdf
T3V3S5-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 16VC SOD523
Power Line Protection: No
Power - Peak Pulse: 220W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 85pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
9000+0.15 EUR
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T5V0S5-7 ds31112.pdf
T5V0S5-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5V 27V SOD523
Produkt ist nicht verfügbar
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2DB1132R-13 2DB1132P_Q_R.pdf
2DB1132R-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 1A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 190MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 1287638 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
29+0.73 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
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2DB1188R-13 2DB1188P_Q_R.pdf
2DB1188R-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 2A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 338895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
27+0.79 EUR
100+0.51 EUR
500+0.38 EUR
1000+0.35 EUR
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2DD1766R-13 ds31167.pdf
2DD1766R-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 32V 2A SOT89-3
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
29+0.73 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.33 EUR
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2DD2150R-13 2DD2150R.pdf
2DD2150R-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 3A SOT89-3
Produkt ist nicht verfügbar
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3.0SMCJ20A-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ20A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 20VWM 32.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3300pF @ 1MHz
Current - Peak Pulse (10/1000µs): 62.6A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 66350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
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DCX53-13 ds31160.pdf
DCX53-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT89-3
Produkt ist nicht verfügbar
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DCX53-16-13 ds31160.pdf
DCX53-16-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT89-3
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DCX56-13 ds31161.pdf
DCX56-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A SOT-89-3
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Produkt ist nicht verfügbar
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DCX56-16-13 ds31161.pdf
DCX56-16-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 1A SOT-89-3
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Produkt ist nicht verfügbar
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DCX68-13 ds31163.pdf
DCX68-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 1A SOT89-3
Produkt ist nicht verfügbar
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DCX69-13 ds31264.pdf
DCX69-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT89-3
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DCX69-16-13 ds31264.pdf
DCX69-16-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT89-3
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DLPD3V3LC-7 ds30662.pdf
DLPD3V3LC-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 22VC SOT26
Produkt ist nicht verfügbar
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DMN2005DLP4K-7 ds30801.pdf
DMN2005DLP4K-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.3A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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DMN2005LP4K-7 ds30799.pdf
DMN2005LP4K-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 200MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 900mV @ 100µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
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DMN3150L-7 DMN3150L.pdf
DMN3150L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 28V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 28 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V
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DMN32D2LFB4-7 ds31124.pdf
DMN32D2LFB4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 300MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
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DMP2004K-7 ds30933.pdf
DMP2004K-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 600MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 16 V
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56+0.38 EUR
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DMP2004VK-7 ds30916.pdf
DMP2004VK-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.53A SOT563
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 530mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 400mW
Technology: MOSFET (Metal Oxide)
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DMP2104LP-7 ds31091.pdf
DMP2104LP-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 1.5A 3DFN1411
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1411-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V
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DMP2215L-7 DMP2215L.pdf
DMP2215L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.08W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMP2240UDM-7 ds31197.pdf
DMP2240UDM-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 90861 Stücke:
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15+1.44 EUR
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DPLS350E-13 ds31230.pdf
DPLS350E-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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DPLS350Y-13 ds31149.pdf
DPLS350Y-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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DXT2222A-13 DXT2222A.pdf
DXT2222A-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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DXT2907A-13 ds30944.pdf
DXT2907A-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 0.6A SOT-89-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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DZT5401-13 DZT5401.pdf
DZT5401-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 0.6A SOT-223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 100765 Stücke:
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17+1.27 EUR
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100+0.51 EUR
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DZT5551-13 ds31219.pdf
DZT5551-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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17+1.27 EUR
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T3V3S5-7 ds31112.pdf
T3V3S5-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 16VC SOD523
Power Line Protection: No
Power - Peak Pulse: 220W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 85pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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32+0.67 EUR
40+0.52 EUR
100+0.32 EUR
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T5V0S5-7 ds31112.pdf
T5V0S5-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5V 27V SOD523
Produkt ist nicht verfügbar
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2DD2150R-13 2DD2150R.pdf
2DD2150R-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 3A SOT89-3
Produkt ist nicht verfügbar
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DCX53-13 ds31160.pdf
DCX53-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT89-3
Produkt ist nicht verfügbar
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DCX53-16-13 ds31160.pdf
DCX53-16-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT89-3
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DCX69-13 ds31264.pdf
DCX69-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT89-3
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DCX69-16-13 ds31264.pdf
DCX69-16-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 1A SOT89-3
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DLPD3V3LC-7 ds30662.pdf
DLPD3V3LC-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 22VC SOT26
Produkt ist nicht verfügbar
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