Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73438) > Seite 247 nach 1224
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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B140WS-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 1A SOD323Current - Reverse Leakage @ Vr: 50 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -40°C ~ 125°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 125pF @ 0V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
auf Bestellung 1122000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS16HLP-7 | Diodes Incorporated |
Description: DIODE STD 100V 215MA X1DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS70LP-7B | Diodes Incorporated |
Description: DIODE SCHOTT 70V 70MA X1DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Schottky Capacitance @ Vr, F: 1pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA Current - Reverse Leakage @ Vr: 10 µA @ 70 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAT54WT-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 100MA SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAV99-13-F | Diodes Incorporated |
Description: DIODE ARRAY GP 75V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BC847B-13-F | Diodes Incorporated |
Description: TRANS NPN 45V 0.1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BC856B-13-F | Diodes Incorporated |
Description: TRANS PNP 65V 0.1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 310 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BC857BS-13-F | Diodes Incorporated |
Description: TRANS 2PNP 45V 100MA SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BCX41TA | Diodes Incorporated |
Description: TRANS NPN 125V 0.8A SOT-23-3Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100µA, 1V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 125 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: SOT-23-3 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52C3V6-13-F | Diodes Incorporated |
Description: DIODE ZENER 3.6V 370MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5.56% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52C51S-13 | Diodes Incorporated |
Description: DIODE ZENER 51V 200MW SOD123 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZ20BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 20V 500MW SOD323FPackaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 70 nA @ 17.7 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 20 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2.5% |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZ5V6BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 5.6V 500MW SOD323FVoltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2.5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 80 Ohms |
auf Bestellung 345000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZ6V2BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 6.12V 500MW SOD323FPackaging: Tape & Reel (TR) Tolerance: ±3% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.12 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 3 V |
auf Bestellung 1947000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX10C-13 | Diodes Incorporated |
Description: DIODE ZENER 10V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX11C-13 | Diodes Incorporated |
Description: DIODE ZENER 11V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX12C-13 | Diodes Incorporated |
Description: DIODE ZENER 12V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX13B-13 | Diodes Incorporated |
Description: DIODE ZENER 13V 300MW SOT23 |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX14-13 | Diodes Incorporated |
Description: DIODE ZENER 14V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX15-13 | Diodes Incorporated |
Description: DIODE ZENER 15V 300MW SOT23 |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX16-13 | Diodes Incorporated |
Description: DIODE ZENER 16V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX18C-13 | Diodes Incorporated |
Description: DIODE ZENER 18V 300MW SOT23Current - Reverse Leakage @ Vr: 50 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% Packaging: Tape & Reel (TR) |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX20C-13 | Diodes Incorporated |
Description: DIODE ZENER 20V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX22D-13 | Diodes Incorporated |
Description: DIODE ZENER 22V 300MW SOT23 |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX27D-13 | Diodes Incorporated |
Description: DIODE ZENER 27V 300MW SOT23 |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX30D-13 | Diodes Incorporated |
Description: DIODE ZENER 30V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX33-13 | Diodes Incorporated |
Description: DIODE ZENER 33V 300MW SOT23Voltage - Zener (Nom) (Vz): 33 V Power - Max: 300 mW Impedance (Max) (Zzt): 75 Ohms Current - Reverse Leakage @ Vr: 50 nA @ 27 V Voltage Coupled to Current - Reverse Leakage @ Vr: 27 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Supplier Device Package: SOT-23-3 Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX36-13 | Diodes Incorporated |
Description: DIODE ZENER 36.9V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX39F-13 | Diodes Incorporated |
Description: DIODE ZENER 39V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX43-13 | Diodes Incorporated |
Description: DIODE ZENER 43V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX5V1B-13 | Diodes Incorporated |
Description: DIODE ZENER 5.1V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX5V6B-13 | Diodes Incorporated |
Description: DIODE ZENER 5.6V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX6V2B-13 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 300MW SOT23Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 nA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 6.2 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX6V8C-13 | Diodes Incorporated |
Description: DIODE ZENER 6.8V 300MW SOT23Current - Reverse Leakage @ Vr: 100 nA @ 5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2.56% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX7V5C-13 | Diodes Incorporated |
Description: DIODE ZENER 7.5V 300MW SOT23Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 6 Ohms |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDZX8V2C-13 | Diodes Incorporated |
Description: DIODE ZENER 8.2V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DDZX9V1C-13 | Diodes Incorporated |
Description: DIODE ZENER 9.1V 300MW SOT23 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DESD6V8DLP-7B | Diodes Incorporated |
Description: TVS DIODE 5.25VWM X1DFN10063Power Line Protection: No Power - Peak Pulse: 70W Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 2 Supplier Device Package: X1-DFN1006-3 Voltage - Reverse Standoff (Typ): 5.25V Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DF1501S | Diodes Incorporated |
Description: BRIDGE RECT 1P 100V 1.5A DF-S |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DFLF1800-7 | Diodes Incorporated |
Description: DIODE GP 800V 1A POWERDI123 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: PowerDI™ 123 Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: POWERDI®123 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DFLS260-7 | Diodes Incorporated |
Description: DIODE SCHOTTK 60V 2A POWERDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMC3032LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8.1A/7A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4407SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 9.9A 8SOInput Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.45W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMG4468LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.62A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN3030-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMG4812SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 8A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1.54W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMG7702SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A POWERDI3333 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMG9933USD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.6A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Current - Continuous Drain (Id) @ 25°C: 4.6A Drain to Source Voltage (Vdss): 20V Power - Max: 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004TK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 540MA SOT523Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V |
auf Bestellung 366000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2300UFB-7B | Diodes Incorporated |
Description: MOSFET N-CH 20V 1.32A 3DFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 468mW (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta) FET Type: N-Channel |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2600UFB-7 | Diodes Incorporated |
Description: MOSFET N-CH 25V 1.3A 3DFNOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMN3024SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMN3025LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMN3051LDM-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT26Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN66D0LW-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 115MA SOT323 |
auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMP1045U-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 4A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1045UFY4-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2015H4-3 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2008UFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 14A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP210DUDJ-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.2A SOT-963 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DMP2160UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFNSupplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 417000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP21D0UFB-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 770MA 3DFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| B140WS-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A SOD323
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1A SOD323
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 1122000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 15000+ | 0.13 EUR |
| BAS16HLP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS70LP-7B |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 70V 70MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Description: DIODE SCHOTT 70V 70MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAT54WT-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 100MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 100MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAV99-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC847B-13-F |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC856B-13-F |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC857BS-13-F |
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Hersteller: Diodes Incorporated
Description: TRANS 2PNP 45V 100MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
Description: TRANS 2PNP 45V 100MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCX41TA |
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Hersteller: Diodes Incorporated
Description: TRANS NPN 125V 0.8A SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100µA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Description: TRANS NPN 125V 0.8A SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100µA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 125 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: SOT-23-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| BZT52C3V6-13-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5.56%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.6V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5.56%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.067 EUR |
| 30000+ | 0.057 EUR |
| BZT52C51S-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 51V 200MW SOD123
Description: DIODE ZENER 51V 200MW SOD123
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DDZ20BSF-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 500MW SOD323F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 70 nA @ 17.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
Description: DIODE ZENER 20V 500MW SOD323F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 70 nA @ 17.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
| DDZ5V6BSF-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 500MW SOD323F
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 80 Ohms
Description: DIODE ZENER 5.6V 500MW SOD323F
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 80 Ohms
auf Bestellung 345000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.043 EUR |
| 6000+ | 0.042 EUR |
| 9000+ | 0.038 EUR |
| 15000+ | 0.036 EUR |
| DDZ6V2BSF-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.12V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 3 V
Description: DIODE ZENER 6.12V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 3 V
auf Bestellung 1947000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.065 EUR |
| 6000+ | 0.048 EUR |
| 9000+ | 0.046 EUR |
| DDZX10C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 300MW SOT23
Description: DIODE ZENER 10V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX11C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 300MW SOT23
Description: DIODE ZENER 11V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX12C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 300MW SOT23
Description: DIODE ZENER 12V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX13B-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 13V 300MW SOT23
Description: DIODE ZENER 13V 300MW SOT23
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
| DDZX14-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 14V 300MW SOT23
Description: DIODE ZENER 14V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX15-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 300MW SOT23
Description: DIODE ZENER 15V 300MW SOT23
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.063 EUR |
| DDZX16-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 300MW SOT23
Description: DIODE ZENER 16V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX18C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 18V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.063 EUR |
| 30000+ | 0.062 EUR |
| 50000+ | 0.056 EUR |
| DDZX20C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 300MW SOT23
Description: DIODE ZENER 20V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX22D-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 22V 300MW SOT23
Description: DIODE ZENER 22V 300MW SOT23
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
| DDZX27D-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Description: DIODE ZENER 27V 300MW SOT23
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.071 EUR |
| DDZX30D-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 300MW SOT23
Description: DIODE ZENER 30V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX33-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 300MW SOT23
Voltage - Zener (Nom) (Vz): 33 V
Power - Max: 300 mW
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 27
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Supplier Device Package: SOT-23-3
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 33V 300MW SOT23
Voltage - Zener (Nom) (Vz): 33 V
Power - Max: 300 mW
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 27
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Supplier Device Package: SOT-23-3
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX36-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 36.9V 300MW SOT23
Description: DIODE ZENER 36.9V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX39F-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 300MW SOT23
Description: DIODE ZENER 39V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX43-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 43V 300MW SOT23
Description: DIODE ZENER 43V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX5V1B-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Description: DIODE ZENER 5.1V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX5V6B-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 300MW SOT23
Description: DIODE ZENER 5.6V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX6V2B-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 300MW SOT23
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Description: DIODE ZENER 6.2V 300MW SOT23
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX6V8C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 300MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 6.8V 300MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX7V5C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 6 Ohms
Description: DIODE ZENER 7.5V 300MW SOT23
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 6 Ohms
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.069 EUR |
| 30000+ | 0.068 EUR |
| 50000+ | 0.061 EUR |
| 100000+ | 0.054 EUR |
| DDZX8V2C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23
Description: DIODE ZENER 8.2V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DDZX9V1C-13 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 300MW SOT23
Description: DIODE ZENER 9.1V 300MW SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DESD6V8DLP-7B |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.25VWM X1DFN10063
Power Line Protection: No
Power - Peak Pulse: 70W
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 2
Supplier Device Package: X1-DFN1006-3
Voltage - Reverse Standoff (Typ): 5.25V
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5.25VWM X1DFN10063
Power Line Protection: No
Power - Peak Pulse: 70W
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 2
Supplier Device Package: X1-DFN1006-3
Voltage - Reverse Standoff (Typ): 5.25V
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DF1501S |
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Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1.5A DF-S
Description: BRIDGE RECT 1P 100V 1.5A DF-S
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.62 EUR |
| DFLF1800-7 |
Hersteller: Diodes Incorporated
Description: DIODE GP 800V 1A POWERDI123
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 1A POWERDI123
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DFLS260-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 60V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTK 60V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMC3032LSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.31 EUR |
| DMG4407SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMG4468LFG-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.62A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN3030-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 7.62A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN3030-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMG4812SSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| DMG7702SFG-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI3333
Description: MOSFET N-CH 30V 12A POWERDI3333
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMG9933USD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.29 EUR |
| 5000+ | 0.26 EUR |
| 7500+ | 0.25 EUR |
| 12500+ | 0.24 EUR |
| 17500+ | 0.23 EUR |
| 25000+ | 0.21 EUR |
| DMN2004TK-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 540MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
Description: MOSFET N-CH 20V 540MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
auf Bestellung 366000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.26 EUR |
| 15000+ | 0.24 EUR |
| 30000+ | 0.23 EUR |
| DMN2300UFB-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.32A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 468mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 20V 1.32A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 468mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.17 EUR |
| 50000+ | 0.14 EUR |
| DMN2600UFB-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 25V 1.3A 3DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMN3024SFG-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DMN3025LFG-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| DMN3051LDM-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 4A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| 15000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
| DMN66D0LW-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT323
Description: MOSFET N-CH 60V 115MA SOT323
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
| DMP1045U-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| DMP1045UFY4-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2015H4-3
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2015H4-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| DMP2008UFG-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.38 EUR |
| 9000+ | 0.37 EUR |
| 15000+ | 0.35 EUR |
| 21000+ | 0.33 EUR |
| 30000+ | 0.32 EUR |
| DMP210DUDJ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.2A SOT-963
Description: MOSFET 2P-CH 20V 0.2A SOT-963
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP2160UFDB-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 417000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| DMP21D0UFB-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 770MA 3DFN
Description: MOSFET P-CH 20V 770MA 3DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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