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ZXM61N02FTA ZXM61N02FTA Diodes Incorporated ZXM61N02F.pdf Description: MOSFET N-CH 20V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 930mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
auf Bestellung 49964 Stücke:
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30+0.59 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.27 EUR
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ZXM61N03FTA ZXM61N03FTA Diodes Incorporated ZXM61N03F.pdf description Description: MOSFET N-CH 30V 1.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 910mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 665312 Stücke:
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46+0.39 EUR
100+0.31 EUR
500+0.28 EUR
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ZXM64N02XTA ZXM64N02XTA Diodes Incorporated ZXM64N02X.pdf Description: MOSFET N-CH 20V 5.4A 8-MSOP
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ZXMD63C02XTA ZXMD63C02XTA Diodes Incorporated ZXMD63C02X.pdf Description: MOSFET N/P-CH 20V 8-MSOP
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ZXMD63C03XTA ZXMD63C03XTA Diodes Incorporated ZXMD63C03X.pdf Description: MOSFET N/P-CH 30V 8-MSOP
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ZXMD63N02XTA ZXMD63N02XTA Diodes Incorporated ZXMD63N02X.pdf Description: MOSFET 2N-CH 20V 2.5A 8-MSOP
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ZXMD63N03XTA ZXMD63N03XTA Diodes Incorporated ZXMD63N03X.pdf Description: MOSFET 2N-CH 30V 2.3A 8-MSOP
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ZXM61P02FTA ZXM61P02FTA Diodes Incorporated ZXM61P02F.pdf description Description: MOSFET P-CH 20V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V
auf Bestellung 490183 Stücke:
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ZXM61P03FTA ZXM61P03FTA Diodes Incorporated ZXM61P03F.pdf Description: MOSFET P-CH 30V 1.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 995753 Stücke:
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ZXM64P02XTA ZXM64P02XTA Diodes Incorporated ZXM64P02X.pdf Description: MOSFET P-CH 20V 3.5A 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 9645 Stücke:
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10+1.76 EUR
100+1.37 EUR
500+1.16 EUR
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ZMV829ATA Diodes Incorporated 830%20Series.pdf Description: DIODE VAR CAP 8.2PF 25V SOD-323
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ZMV831ATA Diodes Incorporated 830%20Series.pdf Description: DIODE VAR CAP 15PF 25V SOD-323
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ZMV832ATA Diodes Incorporated 830%20Series.pdf Description: DIODE VAR CAP 22PF 25V SOD-323
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ZMV833ATA ZMV833ATA Diodes Incorporated 830%20Series.pdf Description: DIODE VAR CAP 33PF 25V SOD-323
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ZMV834ATA Diodes Incorporated 830%20Series.pdf Description: DIODE VAR CAP 47PF 25V SOD-323
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ZMV835ATA Diodes Incorporated 830%20Series.pdf Description: DIODE VAR CAP 68PF 25V SOD-323
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ZMV930TA Diodes Incorporated 930series.pdf Description: DIODE VAR CAP 8.7PF 12V SOD-323
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ZMV931TA Diodes Incorporated 930series.pdf Description: DIODE VAR CAP 14.5PF 12V SOD-323
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ZMV932TA Diodes Incorporated 930series.pdf Description: DIODE VAR CAP 17PF 12V SOD-323
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ZMV933ATA ZMV933ATA Diodes Incorporated 930series.pdf Description: DIODE VAR CAP 42PF 12V SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Capacitance @ Vr, F: 12pF @ 4V, 50MHz
Q @ Vr, F: 150 @ 4V, 50MHz
Supplier Device Package: SOD-323
Voltage - Peak Reverse (Max): 12 V
Produkt ist nicht verfügbar
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ZMV933TA Diodes Incorporated 930series.pdf Description: DIODE VAR CAP 42PF 12V SOD-323
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ZMV934ATA Diodes Incorporated 930series.pdf Description: DIODE VAR CAP 95PF 12V SOD-323
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ZMV934TA Diodes Incorporated 930series.pdf Description: DIODE VAR CAP 95PF 12V SOD-323
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ZXM62P02E6TA ZXM62P02E6TA Diodes Incorporated ZXM62P02E6.pdf Description: MOSFET P-CH 20V 2.3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 84000 Stücke:
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3000+0.40 EUR
6000+0.39 EUR
Mindestbestellmenge: 3000
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ZXM62P02E6TA ZXM62P02E6TA Diodes Incorporated ZXM62P02E6.pdf Description: MOSFET P-CH 20V 2.3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 88362 Stücke:
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16+1.16 EUR
18+1.00 EUR
100+0.70 EUR
500+0.58 EUR
1000+0.49 EUR
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ZVP2120GTA ZVP2120GTA Diodes Incorporated ZVP2120G.pdf Description: MOSFET P-CH 200V 200MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 34629 Stücke:
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15+1.18 EUR
18+1.02 EUR
100+0.71 EUR
500+0.59 EUR
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B1100-13 B1100-13 Diodes Incorporated ds30018.pdf Description: DIODE SCHOTTKY 100V 1A SMA
Produkt ist nicht verfügbar
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B520C-13 B520C-13 Diodes Incorporated B520C-B560C.pdf Description: DIODE SCHOTTKY 20V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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B530C-13 B530C-13 Diodes Incorporated B520C-B560C.pdf Description: DIODE SCHOTTKY 30V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
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B540C-13 B540C-13 Diodes Incorporated B520C-B560C.pdf Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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B550C-13 B550C-13 Diodes Incorporated B520C-B560C.pdf Description: DIODE SCHOTTKY 50V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
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B560C-13 B560C-13 Diodes Incorporated B520C-B560C.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
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ES2A-13 ES2A-13 Diodes Incorporated ES2AA%2CBA%2CCA%2CDA.pdf Description: DIODE SUPERFST SMB 50V 20NS 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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ES2B-13 ES2B-13 Diodes Incorporated ES2AA%2CBA%2CCA%2CDA.pdf Description: DIODE STANDARD 100V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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ES2C-13 ES2C-13 Diodes Incorporated ES2AA%2CBA%2CCA%2CDA.pdf Description: DIODE SUPERFAST SMB 150V 20NS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
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ES2D-13 ES2D-13 Diodes Incorporated ES2AA,BA,CA,DA.pdf Description: DIODE GEN PURP 200V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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ES3A-13 ES3A-13 Diodes Incorporated ES3A%20D.pdf Description: DIODE SUPERFST SMC 50V 20NS 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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ES3B-13 ES3B-13 Diodes Incorporated ES3A%20D.pdf Description: DIODE STANDARD 100V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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ES3C-13 ES3C-13 Diodes Incorporated ES3A%20D.pdf Description: DIODE STANDARD 150V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
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ES3D-13 ES3D-13 Diodes Incorporated ES3A%20D.pdf Description: DIODE STANDARD 200V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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GBJ10005 GBJ10005 Diodes Incorporated ds21218.pdf Description: BRIDGE RECT 1PHASE 50V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ1001 GBJ1001 Diodes Incorporated ds21218.pdf Description: BRIDGE RECT 1PHASE 100V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1002 GBJ1002 Diodes Incorporated ds21218.pdf Description: BRIDGE RECT 1PHASE 200V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1004 GBJ1004 Diodes Incorporated ds21218.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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GBJ1501 GBJ1501 Diodes Incorporated ds21219.pdf Description: BRIDGE RECT 1PHASE 100V 15A GBJ
Produkt ist nicht verfügbar
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GBJ1502 GBJ1502 Diodes Incorporated ds21219.pdf Description: BRIDGE RECT 1PHASE 200V 15A GBJ
Produkt ist nicht verfügbar
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GBJ1504 GBJ1504 Diodes Incorporated ds21219.pdf Description: BRIDGE RECT 1PHASE 400V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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GBJ20005 GBJ20005 Diodes Incorporated ds21220.pdf Description: RECT BRIDGE GPP 50V 20A GBJ
Produkt ist nicht verfügbar
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GBJ2001 GBJ2001 Diodes Incorporated ds21220.pdf Description: RECT BRIDGE GPP 100V 20A GBJ
Produkt ist nicht verfügbar
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GBJ2002 GBJ2002 Diodes Incorporated ds21220.pdf Description: RECT BRIDGE GPP 200V 20A GBJ
Produkt ist nicht verfügbar
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GBJ2004 GBJ2004 Diodes Incorporated GBJ20005~GBJ2010.pdf Description: BRIDGE RECT 1PHASE 400V 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ6005 GBJ6005 Diodes Incorporated ds21216.pdf Description: BRIDGE RECT 1PHASE 50V 6A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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GBJ601 GBJ601 Diodes Incorporated ds21216.pdf Description: BRIDGE RECT 1PHASE 100V 6A GBJ
Produkt ist nicht verfügbar
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GBJ602 GBJ602 Diodes Incorporated ds21216.pdf Description: BRIDGE RECT 1PHASE 200V 6A GBJ
Produkt ist nicht verfügbar
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GBJ604 GBJ604 Diodes Incorporated ds21216.pdf Description: BRIDGE RECT 1PHASE 400V 6A GBJ
Produkt ist nicht verfügbar
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GBJ8005 GBJ8005 Diodes Incorporated ds21217.pdf Description: RECT BRIDGE GPP 50V 8A GBJ
Packaging: Tube
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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GBJ801 GBJ801 Diodes Incorporated ds21217.pdf Description: BRIDGE RECT 1PHASE 100V 8A GBJ
Packaging: Tube
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.00 EUR
15+2.56 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
GBJ802 GBJ802 Diodes Incorporated ds21217.pdf Description: BRIDGE RECT 1PHASE 200V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ804 GBJ804 Diodes Incorporated ds21217.pdf Description: BRIDGE RECT 1PHASE 400V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU401 GBU401 Diodes Incorporated ds21225.pdf Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 1524 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.57 EUR
20+1.36 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.80 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
ZXM61N02FTA ZXM61N02F.pdf
ZXM61N02FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 930mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
auf Bestellung 49964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
30+0.59 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 18
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ZXM61N03FTA description ZXM61N03F.pdf
ZXM61N03FTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 910mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 665312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
46+0.39 EUR
100+0.31 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 33
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ZXM64N02XTA ZXM64N02X.pdf
ZXM64N02XTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 5.4A 8-MSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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ZXMD63C02XTA ZXMD63C02X.pdf
ZXMD63C02XTA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 8-MSOP
Produkt ist nicht verfügbar
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ZXMD63C03XTA ZXMD63C03X.pdf
ZXMD63C03XTA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8-MSOP
auf Bestellung 13602000 Stücke:
Lieferzeit 10-14 Tag (e)
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ZXMD63N02XTA ZXMD63N02X.pdf
ZXMD63N02XTA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.5A 8-MSOP
auf Bestellung 483345000 Stücke:
Lieferzeit 10-14 Tag (e)
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ZXMD63N03XTA ZXMD63N03X.pdf
ZXMD63N03XTA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 2.3A 8-MSOP
auf Bestellung 4715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+3.39 EUR
100+2.72 EUR
500+2.24 EUR
Mindestbestellmenge: 5
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ZXM61P02FTA description ZXM61P02F.pdf
ZXM61P02FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 900MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V
auf Bestellung 490183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
45+0.40 EUR
100+0.19 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
ZXM61P03FTA ZXM61P03F.pdf
ZXM61P03FTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 1.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 995753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
32+0.55 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
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ZXM64P02XTA ZXM64P02X.pdf
ZXM64P02XTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 9645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
10+1.76 EUR
100+1.37 EUR
500+1.16 EUR
Mindestbestellmenge: 9
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ZMV829ATA 830%20Series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 8.2PF 25V SOD-323
Produkt ist nicht verfügbar
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ZMV831ATA 830%20Series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 15PF 25V SOD-323
Produkt ist nicht verfügbar
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ZMV832ATA 830%20Series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 22PF 25V SOD-323
Produkt ist nicht verfügbar
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ZMV833ATA 830%20Series.pdf
ZMV833ATA
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 33PF 25V SOD-323
Produkt ist nicht verfügbar
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ZMV834ATA 830%20Series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 47PF 25V SOD-323
Produkt ist nicht verfügbar
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ZMV835ATA 830%20Series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 68PF 25V SOD-323
Produkt ist nicht verfügbar
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ZMV930TA 930series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 8.7PF 12V SOD-323
Produkt ist nicht verfügbar
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ZMV931TA 930series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 14.5PF 12V SOD-323
Produkt ist nicht verfügbar
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ZMV932TA 930series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 17PF 12V SOD-323
Produkt ist nicht verfügbar
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ZMV933ATA 930series.pdf
ZMV933ATA
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 42PF 12V SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Capacitance @ Vr, F: 12pF @ 4V, 50MHz
Q @ Vr, F: 150 @ 4V, 50MHz
Supplier Device Package: SOD-323
Voltage - Peak Reverse (Max): 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZMV933TA 930series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 42PF 12V SOD-323
Produkt ist nicht verfügbar
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ZMV934ATA 930series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 95PF 12V SOD-323
Produkt ist nicht verfügbar
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ZMV934TA 930series.pdf
Hersteller: Diodes Incorporated
Description: DIODE VAR CAP 95PF 12V SOD-323
Produkt ist nicht verfügbar
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ZXM62P02E6TA ZXM62P02E6.pdf
ZXM62P02E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.40 EUR
6000+0.39 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ZXM62P02E6TA ZXM62P02E6.pdf
ZXM62P02E6TA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 88362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.00 EUR
100+0.70 EUR
500+0.58 EUR
1000+0.49 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
ZVP2120GTA ZVP2120G.pdf
ZVP2120GTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 200V 200MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 34629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
18+1.02 EUR
100+0.71 EUR
500+0.59 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
B1100-13 ds30018.pdf
B1100-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 1A SMA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B520C-13 B520C-B560C.pdf
B520C-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B530C-13 B520C-B560C.pdf
B530C-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B540C-13 B520C-B560C.pdf
B540C-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B550C-13 B520C-B560C.pdf
B550C-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
B560C-13 B520C-B560C.pdf
B560C-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2A-13 ES2AA%2CBA%2CCA%2CDA.pdf
ES2A-13
Hersteller: Diodes Incorporated
Description: DIODE SUPERFST SMB 50V 20NS 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2B-13 ES2AA%2CBA%2CCA%2CDA.pdf
ES2B-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 100V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2C-13 ES2AA%2CBA%2CCA%2CDA.pdf
ES2C-13
Hersteller: Diodes Incorporated
Description: DIODE SUPERFAST SMB 150V 20NS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2D-13 ES2AA,BA,CA,DA.pdf
ES2D-13
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES3A-13 ES3A%20D.pdf
ES3A-13
Hersteller: Diodes Incorporated
Description: DIODE SUPERFST SMC 50V 20NS 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES3B-13 ES3A%20D.pdf
ES3B-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 100V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES3C-13 ES3A%20D.pdf
ES3C-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 150V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES3D-13 ES3A%20D.pdf
ES3D-13
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 200V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ10005 ds21218.pdf
GBJ10005
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1001 ds21218.pdf
GBJ1001
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1002 ds21218.pdf
GBJ1002
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1004 ds21218.pdf
GBJ1004
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 10A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1501 ds21219.pdf
GBJ1501
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 15A GBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1502 ds21219.pdf
GBJ1502
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 15A GBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1504 ds21219.pdf
GBJ1504
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ20005 ds21220.pdf
GBJ20005
Hersteller: Diodes Incorporated
Description: RECT BRIDGE GPP 50V 20A GBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ2001 ds21220.pdf
GBJ2001
Hersteller: Diodes Incorporated
Description: RECT BRIDGE GPP 100V 20A GBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ2002 ds21220.pdf
GBJ2002
Hersteller: Diodes Incorporated
Description: RECT BRIDGE GPP 200V 20A GBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ2004 GBJ20005~GBJ2010.pdf
GBJ2004
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 20A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ6005 ds21216.pdf
GBJ6005
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 50V 6A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ601 ds21216.pdf
GBJ601
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 6A GBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ602 ds21216.pdf
GBJ602
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 6A GBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ604 ds21216.pdf
GBJ604
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 6A GBJ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ8005 ds21217.pdf
GBJ8005
Hersteller: Diodes Incorporated
Description: RECT BRIDGE GPP 50V 8A GBJ
Packaging: Tube
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GBJ801 ds21217.pdf
GBJ801
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 8A GBJ
Packaging: Tube
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.00 EUR
15+2.56 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
GBJ802 ds21217.pdf
GBJ802
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ804 ds21217.pdf
GBJ804
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 8A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU401 ds21225.pdf
GBU401
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 1524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
20+1.36 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.80 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
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