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AL1677-10BS-13 AL1677-10BS-13 Diodes Incorporated AL1677_NPA.pdf Description: LED OFFLINE DRIVER 8-SO
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AL1677-08BS-13 AL1677-08BS-13 Diodes Incorporated AL1677_NPA.pdf Description: IC LED DRIVER OFFL NO 800MA 8SO
Internal Switch(s): Yes
Current - Output / Channel: 800mA
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 15V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 16.2V
Voltage - Supply (Min): 8.5V
Dimming: No
Supplier Device Package: 8-SO
Topology: Step-Down (Buck)
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AL1677-05BS-13 AL1677-05BS-13 Diodes Incorporated AL1677_NPA.pdf Description: IC LED DRIVER OFFL NO 500MA 8SO
Voltage - Supply (Max): 16.2V
Voltage - Supply (Min): 8.5V
Dimming: No
Supplier Device Package: 8-SO
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 500mA
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 15V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AL1677-20BS-13 AL1677-20BS-13 Diodes Incorporated AL1677_NPA.pdf Description: IC LED DRIVER OFFL NO 2A 8SO
Voltage - Supply (Max): 16.2V
Voltage - Supply (Min): 8.5V
Dimming: No
Supplier Device Package: 8-SO
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 2A
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 15V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AP4312K6TR-G1 Diodes Incorporated Description: IC VREF SHUNT ADJ SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Voltage - Supply: 1.7V ~ 18V
Applications: Constant Voltage and Current Controller
Current - Supply: 180µA
Supplier Device Package: SOT-26
Part Status: Active
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DMC3021LSDQ-13 DMC3021LSDQ-13 Diodes Incorporated DMC3021LSDQ.pdf Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMC4015SSD-13 DMC4015SSD-13 Diodes Incorporated DMC4015SSD.pdf Description: MOSFET N/P-CH 40V 8.6A/6.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMN10H120SE-13 DMN10H120SE-13 Diodes Incorporated DMN10H120SE.pdf Description: MOSFET N-CH 100V 3.6A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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DMN15H310SE-13 DMN15H310SE-13 Diodes Incorporated DMN15H310SE.pdf Description: MOSFET N-CH 150V 2A/7.1A SOT223
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
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DMP3028LK3-13 DMP3028LK3-13 Diodes Incorporated DMP3028LK3.pdf Description: MOSFET P-CH 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
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DMP3036SSD-13 DMP3036SSD-13 Diodes Incorporated DMP3036SSD.pdf Description: MOSFET 2P-CH 30V 18.0A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
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DMP3036SSS-13 DMP3036SSS-13 Diodes Incorporated DMP3036SSS.pdf Description: MOSFET P-CH 30V 19.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
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AP9211SA-AB-HAC-7 AP9211SA-AB-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
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AP9211SA-AC-HAC-7 AP9211SA-AC-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
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AP9211SA-AD-HAC-7 AP9211SA-AD-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
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AP9211SA-AE-HAC-7 AP9211SA-AE-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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AP9211SA-AG-HAC-7 AP9211SA-AG-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
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AP9211SA-AH-HAC-7 AP9211SA-AH-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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BCM857BV-7 BCM857BV-7 Diodes Incorporated BCM857BV.pdf Description: TRANS 2PNP 45V 100MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-563
Part Status: Active
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15000+0.19 EUR
21000+0.18 EUR
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D5V0Q1B2LP3-7 D5V0Q1B2LP3-7 Diodes Incorporated D5V0Q1B2LP3.pdf Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: No
Part Status: Active
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20000+0.058 EUR
30000+0.057 EUR
50000+0.055 EUR
70000+0.05 EUR
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DCX115EU-7-F DCX115EU-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DCX143ZU-7-F DCX143ZU-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
21000+0.12 EUR
30000+0.11 EUR
75000+0.1 EUR
150000+0.095 EUR
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DMC25D0UVT-7 DMC25D0UVT-7 Diodes Incorporated DMC25D0UVT.pdf Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
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3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
30000+0.21 EUR
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DMN1019UVT-7 DMN1019UVT-7 Diodes Incorporated DMN1019UVT.pdf Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
Produkt ist nicht verfügbar
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DMN1045UFR4-7 DMN1045UFR4-7 Diodes Incorporated DMN1045UFR4.pdf Description: MOSFET N-CH 12V 3.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
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3000+0.21 EUR
9000+0.19 EUR
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DMN13H750S-7 DMN13H750S-7 Diodes Incorporated DMN13H750S.pdf Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
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DMN24H3D5L-7 DMN24H3D5L-7 Diodes Incorporated DMN24H3D5L.pdf Description: MOSFET N-CH 240V 480MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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DMP1200UFR4-7 DMP1200UFR4-7 Diodes Incorporated DMP1200UFR4.pdf Description: MOSFET P-CH 12V 2A X2-DFN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V
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DMP25H18DLFDE-7 DMP25H18DLFDE-7 Diodes Incorporated DMP25H18DLFDE.pdf Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
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DMP3036SFG-7 DMP3036SFG-7 Diodes Incorporated DMP3036SFG.pdf Description: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
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DMP3056L-7 DMP3056L-7 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
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AP4312K6TR-G1 Diodes Incorporated Description: IC VREF SHUNT ADJ SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Voltage - Supply: 1.7V ~ 18V
Applications: Constant Voltage and Current Controller
Current - Supply: 180µA
Supplier Device Package: SOT-26
Part Status: Active
Produkt ist nicht verfügbar
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AP9211SA-AH-HAC-7 AP9211SA-AH-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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BCM857BV-7 BCM857BV-7 Diodes Incorporated BCM857BV.pdf Description: TRANS 2PNP 45V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-563
Part Status: Active
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D5V0Q1B2LP3-7 D5V0Q1B2LP3-7 Diodes Incorporated D5V0Q1B2LP3.pdf Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: No
Part Status: Active
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DCX115EU-7-F DCX115EU-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DCX143ZU-7-F DCX143ZU-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMC25D0UVT-7 DMC25D0UVT-7 Diodes Incorporated DMC25D0UVT.pdf Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
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DMC3021LSDQ-13 DMC3021LSDQ-13 Diodes Incorporated DMC3021LSDQ.pdf Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMC4015SSD-13 DMC4015SSD-13 Diodes Incorporated DMC4015SSD.pdf Description: MOSFET N/P-CH 40V 8.6A/6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMN1019UVT-7 DMN1019UVT-7 Diodes Incorporated DMN1019UVT.pdf Description: MOSFET N-CH 12V 10.7A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.73W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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DMN1045UFR4-7 DMN1045UFR4-7 Diodes Incorporated DMN1045UFR4.pdf Description: MOSFET N-CH 12V 3.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
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DMN10H120SE-13 DMN10H120SE-13 Diodes Incorporated DMN10H120SE.pdf Description: MOSFET N-CH 100V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
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DMN13H750S-7 DMN13H750S-7 Diodes Incorporated DMN13H750S.pdf Description: MOSFET N-CH 130V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
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DMN15H310SE-13 DMN15H310SE-13 Diodes Incorporated DMN15H310SE.pdf Description: MOSFET N-CH 150V 2A/7.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
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DMN24H3D5L-7 DMN24H3D5L-7 Diodes Incorporated DMN24H3D5L.pdf Description: MOSFET N-CH 240V 480MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V
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DMP1200UFR4-7 DMP1200UFR4-7 Diodes Incorporated DMP1200UFR4.pdf Description: MOSFET P-CH 12V 2A X2-DFN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V
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DMP25H18DLFDE-7 DMP25H18DLFDE-7 Diodes Incorporated DMP25H18DLFDE.pdf Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
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DMP3028LK3-13 DMP3028LK3-13 Diodes Incorporated DMP3028LK3.pdf Description: MOSFET P-CH 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
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DMP3036SFG-7 DMP3036SFG-7 Diodes Incorporated DMP3036SFG.pdf Description: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
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DMP3036SSD-13 DMP3036SSD-13 Diodes Incorporated DMP3036SSD.pdf Description: MOSFET 2P-CH 30V 18.0A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
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DMP3036SSS-13 DMP3036SSS-13 Diodes Incorporated DMP3036SSS.pdf Description: MOSFET P-CH 30V 19.5A 8SO
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
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DMP3056L-7 DMP3056L-7 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DMC25D0UVT-13 DMC25D0UVT-13 Diodes Incorporated DMC25D0UVT.pdf Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
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DMC25D1UVT-13 DMC25D1UVT-13 Diodes Incorporated DMC25D1UVT.pdf Description: MOSFET N/P-CH 25V/12V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 25V, 12V
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMN1019UVT-13 DMN1019UVT-13 Diodes Incorporated DMN1019UVT.pdf Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
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DMN13H750S-13 DMN13H750S-13 Diodes Incorporated DMN13H750S.pdf Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
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DMN24H3D5L-13 DMN24H3D5L-13 Diodes Incorporated DMN24H3D5L.pdf Description: MOSFET N-CH 240V 0.48A SOT23
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DMP25H18DLFDE-13 DMP25H18DLFDE-13 Diodes Incorporated DMP25H18DLFDE.pdf Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
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DMP3018SFK-13 DMP3018SFK-13 Diodes Incorporated DMP3018SFK.pdf Description: MOSFET P-CH 30V 10.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2523-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
Produkt ist nicht verfügbar
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AL1677-10BS-13 AL1677_NPA.pdf
AL1677-10BS-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER 8-SO
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AL1677-08BS-13 AL1677_NPA.pdf
AL1677-08BS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL NO 800MA 8SO
Internal Switch(s): Yes
Current - Output / Channel: 800mA
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 15V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 16.2V
Voltage - Supply (Min): 8.5V
Dimming: No
Supplier Device Package: 8-SO
Topology: Step-Down (Buck)
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AL1677-05BS-13 AL1677_NPA.pdf
AL1677-05BS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL NO 500MA 8SO
Voltage - Supply (Max): 16.2V
Voltage - Supply (Min): 8.5V
Dimming: No
Supplier Device Package: 8-SO
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 500mA
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 15V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AL1677-20BS-13 AL1677_NPA.pdf
AL1677-20BS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL NO 2A 8SO
Voltage - Supply (Max): 16.2V
Voltage - Supply (Min): 8.5V
Dimming: No
Supplier Device Package: 8-SO
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 2A
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 15V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AP4312K6TR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Voltage - Supply: 1.7V ~ 18V
Applications: Constant Voltage and Current Controller
Current - Supply: 180µA
Supplier Device Package: SOT-26
Part Status: Active
Produkt ist nicht verfügbar
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DMC3021LSDQ-13 DMC3021LSDQ.pdf
DMC3021LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Produkt ist nicht verfügbar
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DMC4015SSD-13 DMC4015SSD.pdf
DMC4015SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 8.6A/6.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMN10H120SE-13 DMN10H120SE.pdf
DMN10H120SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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DMN15H310SE-13 DMN15H310SE.pdf
DMN15H310SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 150V 2A/7.1A SOT223
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
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2500+0.83 EUR
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DMP3028LK3-13 DMP3028LK3.pdf
DMP3028LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.52 EUR
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DMP3036SSD-13 DMP3036SSD.pdf
DMP3036SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 18.0A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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DMP3036SSS-13 DMP3036SSS.pdf
DMP3036SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 19.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.65 EUR
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AP9211SA-AB-HAC-7 AP9211.pdf
AP9211SA-AB-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9211SA-AC-HAC-7 AP9211.pdf
AP9211SA-AC-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP9211SA-AD-HAC-7 AP9211.pdf
AP9211SA-AD-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP9211SA-AE-HAC-7 AP9211.pdf
AP9211SA-AE-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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AP9211SA-AG-HAC-7 AP9211.pdf
AP9211SA-AG-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP9211SA-AH-HAC-7 AP9211.pdf
AP9211SA-AH-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BCM857BV-7 BCM857BV.pdf
BCM857BV-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 45V 100MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
21000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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D5V0Q1B2LP3-7 D5V0Q1B2LP3.pdf
D5V0Q1B2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: No
Part Status: Active
auf Bestellung 8490000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.065 EUR
20000+0.058 EUR
30000+0.057 EUR
50000+0.055 EUR
70000+0.05 EUR
Mindestbestellmenge: 10000 Stücke
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DCX115EU-7-F DCX_XXXX_U.pdf
DCX115EU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DCX143ZU-7-F DCX_XXXX_U.pdf
DCX143ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 474000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
21000+0.12 EUR
30000+0.11 EUR
75000+0.1 EUR
150000+0.095 EUR
Mindestbestellmenge: 3000 Stücke
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DMC25D0UVT-7 DMC25D0UVT.pdf
DMC25D0UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 291000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
30000+0.21 EUR
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DMN1019UVT-7 DMN1019UVT.pdf
DMN1019UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMN1045UFR4-7 DMN1045UFR4.pdf
DMN1045UFR4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 3.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
auf Bestellung 159000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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DMN13H750S-7 DMN13H750S.pdf
DMN13H750S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
6000+0.33 EUR
9000+0.31 EUR
Mindestbestellmenge: 3000 Stücke
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DMN24H3D5L-7 DMN24H3D5L.pdf
DMN24H3D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 480MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DMP1200UFR4-7 DMP1200UFR4.pdf
DMP1200UFR4-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 2A X2-DFN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.19 EUR
21000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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DMP25H18DLFDE-7 DMP25H18DLFDE.pdf
DMP25H18DLFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.95 EUR
Mindestbestellmenge: 3000 Stücke
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DMP3036SFG-7 DMP3036SFG.pdf
DMP3036SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.49 EUR
4000+0.44 EUR
6000+0.43 EUR
10000+0.4 EUR
14000+0.39 EUR
20000+0.37 EUR
Mindestbestellmenge: 2000 Stücke
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DMP3056L-7 DMP3056L.pdf
DMP3056L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
9000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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AP4312K6TR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Voltage - Supply: 1.7V ~ 18V
Applications: Constant Voltage and Current Controller
Current - Supply: 180µA
Supplier Device Package: SOT-26
Part Status: Active
Produkt ist nicht verfügbar
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AP9211SA-AH-HAC-7 AP9211.pdf
AP9211SA-AH-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCM857BV-7 BCM857BV.pdf
BCM857BV-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 45V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 55704 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
32+0.65 EUR
100+0.42 EUR
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D5V0Q1B2LP3-7 D5V0Q1B2LP3.pdf
D5V0Q1B2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: No
Part Status: Active
auf Bestellung 8490807 Stücke:
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DCX115EU-7-F DCX_XXXX_U.pdf
DCX115EU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DCX143ZU-7-F DCX_XXXX_U.pdf
DCX143ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMC25D0UVT-7 DMC25D0UVT.pdf
DMC25D0UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 291646 Stücke:
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DMC3021LSDQ-13 DMC3021LSDQ.pdf
DMC3021LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 1476 Stücke:
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DMC4015SSD-13 DMC4015SSD.pdf
DMC4015SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 8.6A/6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 13479 Stücke:
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DMN1019UVT-7 DMN1019UVT.pdf
DMN1019UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 1.73W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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DMN1045UFR4-7 DMN1045UFR4.pdf
DMN1045UFR4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 3.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
auf Bestellung 159663 Stücke:
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DMN10H120SE-13 DMN10H120SE.pdf
DMN10H120SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 905640 Stücke:
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DMN13H750S-7 DMN13H750S.pdf
DMN13H750S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 130V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 147502 Stücke:
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DMN15H310SE-13 DMN15H310SE.pdf
DMN15H310SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 150V 2A/7.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
auf Bestellung 482282 Stücke:
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DMN24H3D5L-7 DMN24H3D5L.pdf
DMN24H3D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 480MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V
auf Bestellung 7257 Stücke:
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DMP1200UFR4-7 DMP1200UFR4.pdf
DMP1200UFR4-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 2A X2-DFN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V
auf Bestellung 51000 Stücke:
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DMP25H18DLFDE-7 DMP25H18DLFDE.pdf
DMP25H18DLFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
auf Bestellung 150271 Stücke:
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DMP3028LK3-13 DMP3028LK3.pdf
DMP3028LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
auf Bestellung 6495 Stücke:
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DMP3036SFG-7 DMP3036SFG.pdf
DMP3036SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 223736 Stücke:
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DMP3036SSD-13 DMP3036SSD.pdf
DMP3036SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 18.0A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 847 Stücke:
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10+2.18 EUR
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DMP3036SSS-13 DMP3036SSS.pdf
DMP3036SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 19.5A 8SO
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 4245 Stücke:
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9+2.56 EUR
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DMP3056L-7 DMP3056L.pdf
DMP3056L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 146904 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
30+0.71 EUR
36+0.6 EUR
50+0.51 EUR
100+0.45 EUR
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DMC25D0UVT-13 DMC25D0UVT.pdf
DMC25D0UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
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DMC25D1UVT-13 DMC25D1UVT.pdf
DMC25D1UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/12V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 25V, 12V
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMN1019UVT-13 DMN1019UVT.pdf
DMN1019UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
Produkt ist nicht verfügbar
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DMN13H750S-13 DMN13H750S.pdf
DMN13H750S-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.33 EUR
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DMN24H3D5L-13 DMN24H3D5L.pdf
DMN24H3D5L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 0.48A SOT23
Produkt ist nicht verfügbar
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DMP25H18DLFDE-13 DMP25H18DLFDE.pdf
DMP25H18DLFDE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+1.01 EUR
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DMP3018SFK-13 DMP3018SFK.pdf
DMP3018SFK-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2523-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
Produkt ist nicht verfügbar
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