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74AUP2G07FW4-7 74AUP2G07FW4-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 4mA
Supplier Device Package: X2-DFN1010-6
auf Bestellung 66653 Stücke:
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28+0.63 EUR
38+0.47 EUR
42+0.43 EUR
100+0.29 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.15 EUR
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74AUP2G07FW4-7 74AUP2G07FW4-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 4mA
Supplier Device Package: X2-DFN1010-6
auf Bestellung 70000 Stücke:
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10000+0.12 EUR
25000+0.11 EUR
50000+0.1 EUR
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74AUP2G07FZ4-7 74AUP2G07FZ4-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
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74AUP2G07FZ4-7 74AUP2G07FZ4-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
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74AUP2G14FW3-7 74AUP2G14FW3-7 Diodes Incorporated 74AUP2G14.pdf Description: IC INVERTER 2CH 2-INP DFN0910-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0910-6
Input Logic Level - High: 0.6V ~ 2.29V
Input Logic Level - Low: 0.1V ~ 0.88V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
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500+0.22 EUR
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74AUP2G14FZ4-7 74AUP2G14FZ4-7 Diodes Incorporated 74AUP2G14.pdf Description: IC INVERTER 2CH 2-INP DFN1410-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 0.6V ~ 2.29V
Input Logic Level - Low: 0.1V ~ 0.88V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
Produkt ist nicht verfügbar
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74AUP2G14FZ4-7 74AUP2G14FZ4-7 Diodes Incorporated 74AUP2G14.pdf Description: IC INVERTER 2CH 2-INP DFN1410-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 0.6V ~ 2.29V
Input Logic Level - Low: 0.1V ~ 0.88V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
Produkt ist nicht verfügbar
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74AUP2G17FW3-7 74AUP2G17FW3-7 Diodes Incorporated 74AUP2G17.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN0910-6
Part Status: Active
auf Bestellung 109984 Stücke:
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39+0.45 EUR
48+0.37 EUR
100+0.28 EUR
250+0.23 EUR
500+0.2 EUR
1000+0.18 EUR
2500+0.15 EUR
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74AUP2G17FW4-7 74AUP2G17FW4-7 Diodes Incorporated 74AUP2G17.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1010-6
Part Status: Active
auf Bestellung 94056 Stücke:
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39+0.45 EUR
48+0.37 EUR
100+0.28 EUR
250+0.23 EUR
500+0.2 EUR
1000+0.18 EUR
2500+0.15 EUR
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74AUP2G34FW4-7 74AUP2G34FW4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF/DVR DUAL LP 6DFN
auf Bestellung 495080000 Stücke:
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74AUP2G34FW4-7 74AUP2G34FW4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FW4-7 74AUP2G34FW4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FZ4-7 74AUP2G34FZ4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF NON-INVERT 3.6V 6DFN
Produkt ist nicht verfügbar
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74AUP2G34FZ4-7 74AUP2G34FZ4-7 Diodes Incorporated 74AUP2G34.pdf Description: IC BUFF NON-INVERT 3.6V 6DFN
Produkt ist nicht verfügbar
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D12V0H1U2WS-7 D12V0H1U2WS-7 Diodes Incorporated D12V0H1U2WS.pdf Description: TVS DIODE 12VWM 24VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 140655 Stücke:
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39+0.46 EUR
59+0.3 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.14 EUR
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D12V0H1U2WS-7 D12V0H1U2WS-7 Diodes Incorporated D12V0H1U2WS.pdf Description: TVS DIODE 12VWM 24VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.098 EUR
21000+0.095 EUR
30000+0.091 EUR
75000+0.089 EUR
Mindestbestellmenge: 3000
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D24V0L1B2LPS-7B D24V0L1B2LPS-7B Diodes Incorporated D24V0L1B2LPS.pdf Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 167988 Stücke:
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44+0.4 EUR
56+0.32 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.15 EUR
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D24V0L1B2LPS-7B D24V0L1B2LPS-7B Diodes Incorporated D24V0L1B2LPS.pdf Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 160000 Stücke:
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10000+0.14 EUR
Mindestbestellmenge: 10000
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D5V0F4U5P5-7 D5V0F4U5P5-7 Diodes Incorporated D5V0F4U5P5.pdf Description: TVS DIODE 5.5VWM 12.5VC SOT953
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-953
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Part Status: Active
auf Bestellung 21466 Stücke:
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24+0.74 EUR
36+0.49 EUR
100+0.33 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 24
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DMG3402L-7 DMG3402L-7 Diodes Incorporated DMG3402L.pdf Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
auf Bestellung 792591 Stücke:
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29+0.62 EUR
43+0.42 EUR
100+0.21 EUR
500+0.2 EUR
1000+0.18 EUR
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DMG3402L-7 DMG3402L-7 Diodes Incorporated DMG3402L.pdf Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
auf Bestellung 789000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
9000+0.099 EUR
15000+0.095 EUR
21000+0.092 EUR
Mindestbestellmenge: 3000
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DMN10H120SFG-7 DMN10H120SFG-7 Diodes Incorporated DMN10H120SFG.pdf Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 53294 Stücke:
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13+1.41 EUR
17+1.06 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
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DMN10H120SFG-7 DMN10H120SFG-7 Diodes Incorporated DMN10H120SFG.pdf Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 48000 Stücke:
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2000+0.37 EUR
4000+0.36 EUR
Mindestbestellmenge: 2000
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DMN10H220LE-13 DMN10H220LE-13 Diodes Incorporated DMN10H220LE.pdf Description: MOSFET N-CH 100V 2.3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 28654 Stücke:
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18+0.99 EUR
21+0.85 EUR
100+0.58 EUR
500+0.48 EUR
1000+0.44 EUR
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DMN10H220LE-13 DMN10H220LE-13 Diodes Incorporated DMN10H220LE.pdf Description: MOSFET N-CH 100V 2.3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 27500 Stücke:
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2500+0.35 EUR
5000+0.34 EUR
12500+0.33 EUR
Mindestbestellmenge: 2500
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DMN3032LE-13 DMN3032LE-13 Diodes Incorporated DMN3032LE.pdf Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
auf Bestellung 1345053 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
23+0.78 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
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DMN3032LE-13 DMN3032LE-13 Diodes Incorporated DMN3032LE.pdf Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
auf Bestellung 1345000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.29 EUR
5000+0.27 EUR
12500+0.26 EUR
17500+0.25 EUR
Mindestbestellmenge: 2500
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DMP6250SE-13 DMP6250SE-13 Diodes Incorporated DMP6250SE.pdf Description: MOSFET P-CH 60V 2.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
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DMP6250SE-13 DMP6250SE-13 Diodes Incorporated DMP6250SE.pdf Description: MOSFET P-CH 60V 2.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
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DT1452-02SO-7 DT1452-02SO-7 Diodes Incorporated DT1452-02SO.pdf Description: TVS DIODE 5.5VWM 11VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: Yes
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DT1452-02SO-7 DT1452-02SO-7 Diodes Incorporated DT1452-02SO.pdf Description: TVS DIODE 5.5VWM 11VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: Yes
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DXT696BK-13 DXT696BK-13 Diodes Incorporated DXT696BK.pdf Description: TRANS NPN 180V 0.5A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 3.9 W
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DXT696BK-13 DXT696BK-13 Diodes Incorporated DXT696BK.pdf Description: TRANS NPN 180V 0.5A TO-252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 3.9 W
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GDZ3V9LP3-7 GDZ3V9LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 3.9V 250MW 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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137+0.13 EUR
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GDZ3V9LP3-7 GDZ3V9LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 3.9V 250MW 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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GDZ4V7LP3-7 GDZ4V7LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 4.7V 250MW 2DFN
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GDZ4V7LP3-7 GDZ4V7LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 4.7V 250MW 2DFN
Produkt ist nicht verfügbar
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MBRF10150CT-LJ MBRF10150CT-LJ Diodes Incorporated MBR%28F%2910150CT.pdf Description: DIODE ARR SCHOT 150V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF1060CT-JT MBRF1060CT-JT Diodes Incorporated MBRF1030_60CT.pdf Description: DIODE ARR SCHOTT 60V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF20200CT-LJ MBRF20200CT-LJ Diodes Incorporated MBR%28F%2920200CT_20A.pdf Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF2045CT-LJ MBRF2045CT-LJ Diodes Incorporated MBR%28F%292045CT-2060CT.pdf Description: DIODE ARR SCHOT 45V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF2060CT-LJ MBRF2060CT-LJ Diodes Incorporated MBR%28F%292045CT-2060CT.pdf Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF3045CT-LJ MBRF3045CT-LJ Diodes Incorporated MBR%28F%293045CT.pdf Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBR05U40CSP-7 SBR05U40CSP-7 Diodes Incorporated SBR05U40CSP.pdf Description: DIODE SBR 40V 500MA WLB1006
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SBR05U40CSP-7 SBR05U40CSP-7 Diodes Incorporated SBR05U40CSP.pdf Description: DIODE SBR 40V 500MA WLB1006
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SBR05U40CSP-7 SBR05U40CSP-7 Diodes Incorporated SBR05U40CSP.pdf Description: DIODE SBR 40V 500MA WLB1006
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SBRT10U50SP5-13 SBRT10U50SP5-13 Diodes Incorporated SBRT10U50SP5.pdf Description: DIODE SBR 50V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 75 mA @ 50 V
auf Bestellung 229029 Stücke:
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16+1.16 EUR
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SBRT10U50SP5-13 SBRT10U50SP5-13 Diodes Incorporated SBRT10U50SP5.pdf Description: DIODE SBR 50V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 75 mA @ 50 V
auf Bestellung 225000 Stücke:
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SBRT20U50SLP-13 SBRT20U50SLP-13 Diodes Incorporated SBRT20U50SLP.pdf Description: DIODE SBR 50V 20A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 350pF @ 50V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 3962 Stücke:
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1000+0.67 EUR
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SBRT25U60SLP-13 SBRT25U60SLP-13 Diodes Incorporated SBRT25U60SLP.pdf Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 45760 Stücke:
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12+1.48 EUR
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100+0.98 EUR
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1000+0.7 EUR
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SBRT25U60SLP-13 SBRT25U60SLP-13 Diodes Incorporated SBRT25U60SLP.pdf Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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2500+0.61 EUR
5000+0.56 EUR
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Mindestbestellmenge: 2500
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SBRT3M40P1-7 SBRT3M40P1-7 Diodes Incorporated SBRT3M40P1.pdf Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
auf Bestellung 112016 Stücke:
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28+0.65 EUR
41+0.43 EUR
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500+0.25 EUR
1000+0.21 EUR
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SBRT3M40P1-7 SBRT3M40P1-7 Diodes Incorporated SBRT3M40P1.pdf Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
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3000+0.15 EUR
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SBRT3U40P1-7 SBRT3U40P1-7 Diodes Incorporated SBRT3U40P1.pdf Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
auf Bestellung 359840 Stücke:
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33+0.55 EUR
52+0.34 EUR
100+0.23 EUR
500+0.19 EUR
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SBRT3U40P1-7 SBRT3U40P1-7 Diodes Incorporated SBRT3U40P1.pdf Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
auf Bestellung 354000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
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SBRT5A50SAF-13 SBRT5A50SAF-13 Diodes Incorporated SBRT5A50SAF.pdf Description: DIODE SBR 50V 5A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
auf Bestellung 71410 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
23+0.8 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
2000+0.31 EUR
5000+0.3 EUR
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SBRT5A50SAF-13 SBRT5A50SAF-13 Diodes Incorporated SBRT5A50SAF.pdf Description: DIODE SBR 50V 5A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
auf Bestellung 60000 Stücke:
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TLV271CW5-7 TLV271CW5-7 Diodes Incorporated TLV27x.pdf Description: IC CMOS 1 CIRCUIT SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SOT-25
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 401303 Stücke:
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TLV271CW5-7 TLV271CW5-7 Diodes Incorporated TLV27x.pdf Description: IC CMOS 1 CIRCUIT SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SOT-25
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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ZXMN6A08E6QTA ZXMN6A08E6QTA Diodes Incorporated ZXMN6A08E6Q.pdf Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28473 Stücke:
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74AUP2G07FW4-7 74AUP2G07.pdf
74AUP2G07FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 4mA
Supplier Device Package: X2-DFN1010-6
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28+0.63 EUR
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74AUP2G07FW4-7 74AUP2G07.pdf
74AUP2G07FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 4mA
Supplier Device Package: X2-DFN1010-6
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5000+0.13 EUR
10000+0.12 EUR
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74AUP2G07FZ4-7 74AUP2G07.pdf
74AUP2G07FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
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74AUP2G07FZ4-7 74AUP2G07.pdf
74AUP2G07FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
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5000+0.17 EUR
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74AUP2G14FW3-7 74AUP2G14.pdf
74AUP2G14FW3-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN0910-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0910-6
Input Logic Level - High: 0.6V ~ 2.29V
Input Logic Level - Low: 0.1V ~ 0.88V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
auf Bestellung 114655 Stücke:
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Anzahl Preis
23+0.77 EUR
31+0.57 EUR
36+0.5 EUR
100+0.32 EUR
250+0.27 EUR
500+0.22 EUR
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74AUP2G14FZ4-7 74AUP2G14.pdf
74AUP2G14FZ4-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN1410-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 0.6V ~ 2.29V
Input Logic Level - Low: 0.1V ~ 0.88V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
Produkt ist nicht verfügbar
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74AUP2G14FZ4-7 74AUP2G14.pdf
74AUP2G14FZ4-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP DFN1410-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 0.6V ~ 2.29V
Input Logic Level - Low: 0.1V ~ 0.88V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
Produkt ist nicht verfügbar
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74AUP2G17FW3-7 74AUP2G17.pdf
74AUP2G17FW3-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN0910-6
Part Status: Active
auf Bestellung 109984 Stücke:
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Anzahl Preis
24+0.76 EUR
39+0.45 EUR
48+0.37 EUR
100+0.28 EUR
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500+0.2 EUR
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74AUP2G17FW4-7 74AUP2G17.pdf
74AUP2G17FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1010-6
Part Status: Active
auf Bestellung 94056 Stücke:
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Anzahl Preis
24+0.76 EUR
39+0.45 EUR
48+0.37 EUR
100+0.28 EUR
250+0.23 EUR
500+0.2 EUR
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74AUP2G34FW4-7 74AUP2G34.pdf
74AUP2G34FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FW4-7 74AUP2G34.pdf
74AUP2G34FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FW4-7 74AUP2G34.pdf
74AUP2G34FW4-7
Hersteller: Diodes Incorporated
Description: IC BUFF/DVR DUAL LP 6DFN
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74AUP2G34FZ4-7 74AUP2G34.pdf
74AUP2G34FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFF NON-INVERT 3.6V 6DFN
Produkt ist nicht verfügbar
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74AUP2G34FZ4-7 74AUP2G34.pdf
74AUP2G34FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFF NON-INVERT 3.6V 6DFN
Produkt ist nicht verfügbar
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D12V0H1U2WS-7 D12V0H1U2WS.pdf
D12V0H1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 24VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 140655 Stücke:
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Anzahl Preis
39+0.46 EUR
59+0.3 EUR
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D12V0H1U2WS-7 D12V0H1U2WS.pdf
D12V0H1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 24VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 180pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 140655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.098 EUR
21000+0.095 EUR
30000+0.091 EUR
75000+0.089 EUR
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D24V0L1B2LPS-7B D24V0L1B2LPS.pdf
D24V0L1B2LPS-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 167988 Stücke:
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Anzahl Preis
44+0.4 EUR
56+0.32 EUR
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D24V0L1B2LPS-7B D24V0L1B2LPS.pdf
D24V0L1B2LPS-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.14 EUR
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D5V0F4U5P5-7 D5V0F4U5P5.pdf
D5V0F4U5P5-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12.5VC SOT953
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-953
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Part Status: Active
auf Bestellung 21466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
36+0.49 EUR
100+0.33 EUR
500+0.26 EUR
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DMG3402L-7 DMG3402L.pdf
DMG3402L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
auf Bestellung 792591 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.21 EUR
500+0.2 EUR
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DMG3402L-7 DMG3402L.pdf
DMG3402L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
auf Bestellung 789000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
9000+0.099 EUR
15000+0.095 EUR
21000+0.092 EUR
Mindestbestellmenge: 3000
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DMN10H120SFG-7 DMN10H120SFG.pdf
DMN10H120SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 53294 Stücke:
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Anzahl Preis
13+1.41 EUR
17+1.06 EUR
100+0.7 EUR
500+0.54 EUR
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DMN10H120SFG-7 DMN10H120SFG.pdf
DMN10H120SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.8A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.37 EUR
4000+0.36 EUR
Mindestbestellmenge: 2000
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DMN10H220LE-13 DMN10H220LE.pdf
DMN10H220LE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 28654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.85 EUR
100+0.58 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H220LE-13 DMN10H220LE.pdf
DMN10H220LE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.35 EUR
5000+0.34 EUR
12500+0.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMN3032LE-13 DMN3032LE.pdf
DMN3032LE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
auf Bestellung 1345053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
23+0.78 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DMN3032LE-13 DMN3032LE.pdf
DMN3032LE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
auf Bestellung 1345000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.29 EUR
5000+0.27 EUR
12500+0.26 EUR
17500+0.25 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMP6250SE-13 DMP6250SE.pdf
DMP6250SE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
auf Bestellung 42323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMP6250SE-13 DMP6250SE.pdf
DMP6250SE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.46 EUR
5000+0.43 EUR
7500+0.41 EUR
12500+0.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DT1452-02SO-7 DT1452-02SO.pdf
DT1452-02SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: Yes
auf Bestellung 243335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
39+0.46 EUR
100+0.23 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DT1452-02SO-7 DT1452-02SO.pdf
DT1452-02SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: Yes
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
9000+0.12 EUR
75000+0.1 EUR
Mindestbestellmenge: 3000
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DXT696BK-13 DXT696BK.pdf
DXT696BK-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 180V 0.5A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 3.9 W
auf Bestellung 114273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.94 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.42 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DXT696BK-13 DXT696BK.pdf
DXT696BK-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 180V 0.5A TO-252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 3.9 W
auf Bestellung 112500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.37 EUR
5000+0.34 EUR
7500+0.33 EUR
12500+0.31 EUR
17500+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GDZ3V9LP3-7 GDZxVxLP3.pdf
GDZ3V9LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.9V 250MW 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 177599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
137+0.13 EUR
269+0.066 EUR
500+0.063 EUR
1000+0.061 EUR
2000+0.058 EUR
5000+0.056 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
GDZ3V9LP3-7 GDZxVxLP3.pdf
GDZ3V9LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.9V 250MW 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.055 EUR
Mindestbestellmenge: 10000
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GDZ4V7LP3-7 GDZxVxLP3.pdf
GDZ4V7LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.7V 250MW 2DFN
auf Bestellung 5174 Stücke:
Lieferzeit 10-14 Tag (e)
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GDZ4V7LP3-7 GDZxVxLP3.pdf
GDZ4V7LP3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 4.7V 250MW 2DFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF10150CT-LJ MBR%28F%2910150CT.pdf
MBRF10150CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 150V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF1060CT-JT MBRF1030_60CT.pdf
MBRF1060CT-JT
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 60V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRF20200CT-LJ MBR%28F%2920200CT_20A.pdf
MBRF20200CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF2045CT-LJ MBR%28F%292045CT-2060CT.pdf
MBRF2045CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 45V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF2060CT-LJ MBR%28F%292045CT-2060CT.pdf
MBRF2060CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF3045CT-LJ MBR%28F%293045CT.pdf
MBRF3045CT-LJ
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBR05U40CSP-7 SBR05U40CSP.pdf
SBR05U40CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 500MA WLB1006
auf Bestellung 3160 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR05U40CSP-7 SBR05U40CSP.pdf
SBR05U40CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 500MA WLB1006
auf Bestellung 3160 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR05U40CSP-7 SBR05U40CSP.pdf
SBR05U40CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 500MA WLB1006
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRT10U50SP5-13 SBRT10U50SP5.pdf
SBRT10U50SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 75 mA @ 50 V
auf Bestellung 229029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.01 EUR
100+0.7 EUR
500+0.58 EUR
1000+0.5 EUR
2000+0.44 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SBRT10U50SP5-13 SBRT10U50SP5.pdf
SBRT10U50SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 75 mA @ 50 V
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.42 EUR
10000+0.39 EUR
25000+0.38 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SBRT20U50SLP-13 SBRT20U50SLP.pdf
SBRT20U50SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 20A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 350pF @ 50V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 3962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
14+1.3 EUR
100+0.9 EUR
500+0.73 EUR
1000+0.67 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SBRT25U60SLP-13 SBRT25U60SLP.pdf
SBRT25U60SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 45760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
16+1.17 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SBRT25U60SLP-13 SBRT25U60SLP.pdf
SBRT25U60SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 25A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 25A
Supplier Device Package: PowerDI5060-8
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.61 EUR
5000+0.56 EUR
7500+0.55 EUR
Mindestbestellmenge: 2500
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SBRT3M40P1-7 SBRT3M40P1.pdf
SBRT3M40P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
auf Bestellung 112016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.43 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
Mindestbestellmenge: 28
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SBRT3M40P1-7 SBRT3M40P1.pdf
SBRT3M40P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000
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SBRT3U40P1-7 SBRT3U40P1.pdf
SBRT3U40P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
auf Bestellung 359840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
52+0.34 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.16 EUR
Mindestbestellmenge: 33
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SBRT3U40P1-7 SBRT3U40P1.pdf
SBRT3U40P1-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
auf Bestellung 354000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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SBRT5A50SAF-13 SBRT5A50SAF.pdf
SBRT5A50SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 5A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
auf Bestellung 71410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
23+0.8 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
2000+0.31 EUR
5000+0.3 EUR
Mindestbestellmenge: 19
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SBRT5A50SAF-13 SBRT5A50SAF.pdf
SBRT5A50SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 5A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 5A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.28 EUR
30000+0.27 EUR
50000+0.26 EUR
Mindestbestellmenge: 10000
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TLV271CW5-7 TLV27x.pdf
TLV271CW5-7
Hersteller: Diodes Incorporated
Description: IC CMOS 1 CIRCUIT SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SOT-25
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 401303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
57+0.31 EUR
64+0.28 EUR
100+0.24 EUR
250+0.22 EUR
500+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 40
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TLV271CW5-7 TLV27x.pdf
TLV271CW5-7
Hersteller: Diodes Incorporated
Description: IC CMOS 1 CIRCUIT SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SOT-25
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 401000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
75000+0.14 EUR
Mindestbestellmenge: 3000
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ZXMN6A08E6QTA ZXMN6A08E6Q.pdf
ZXMN6A08E6QTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
14+1.27 EUR
100+0.85 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 11
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