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PI7VD9004ACHFCIE PI7VD9004ACHFCIE Diodes Incorporated Description: IC VIDEO DECODER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Decoder
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: 80-LQFP (10x10)
Part Status: Obsolete
Control Interface: I²C, I²S
Produkt ist nicht verfügbar
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BAV199WQ-7 BAV199WQ-7 Diodes Incorporated BAV199WQ.pdf Description: DIODE ARRAY GP 85V 140MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT46WQ-7-F BAT46WQ-7-F Diodes Incorporated BAT46WQ.pdf Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
Qualification: AEC-Q101
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74LVC1G3157DW-7 74LVC1G3157DW-7 Diodes Incorporated 74LVC1G3157.pdf Description: IC SWITCH SPDT X 1 10OHM SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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74LVC1G3157FZ4-7 74LVC1G3157FZ4-7 Diodes Incorporated 74LVC1G3157.pdf Description: IC SWITCH SPDT X 1 10OHM 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: X2-DFN1410-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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B190BQ-13-F B190BQ-13-F Diodes Incorporated B170BQ-B180BQ-B190BQ-B1100BQ.pdf Description: DIODE SCHOTTKY 90V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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BAV199WQ-7 BAV199WQ-7 Diodes Incorporated BAV199WQ.pdf Description: DIODE ARRAY GP 85V 140MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
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BAT46WQ-7-F BAT46WQ-7-F Diodes Incorporated BAT46WQ.pdf Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
Qualification: AEC-Q101
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74LVC1G3157DW-7 74LVC1G3157DW-7 Diodes Incorporated 74LVC1G3157.pdf Description: IC SWITCH SPDT X 1 10OHM SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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74LVC1G3157FZ4-7 74LVC1G3157FZ4-7 Diodes Incorporated 74LVC1G3157.pdf Description: IC SWITCH SPDT X 1 10OHM 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: X2-DFN1410-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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B190BQ-13-F B190BQ-13-F Diodes Incorporated B170BQ-B180BQ-B190BQ-B1100BQ.pdf Description: DIODE SCHOTTKY 90V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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BAV199Q-7-F BAV199Q-7-F Diodes Incorporated ds30232.pdf Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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BAV199Q-7-F BAV199Q-7-F Diodes Incorporated ds30232.pdf Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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ZXLD1366QET5TA ZXLD1366QET5TA Diodes Incorporated ZXLD1366Q.pdf Description: IC LED DRVR RGLTR PWM 1A TSOT25
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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ZXLD1366QEN8TC ZXLD1366QEN8TC Diodes Incorporated ZXLD1366Q.pdf Description: IC LED DRIVER RGLTR PWM 1A 8SO
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 60V
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 60V
Voltage - Supply (Min): 6V
Dimming: PWM
Supplier Device Package: 8-SO-EP
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 1A
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 1MHz
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D22V0S1U2WS-7 D22V0S1U2WS-7 Diodes Incorporated D22V0S1U2WS.pdf Description: TVS DIODE 22VWM 37VC SOD323
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 37V
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 220pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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D5V0M1U2LP3-7 D5V0M1U2LP3-7 Diodes Incorporated D5V0M1U2LP3.pdf Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6.2V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
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DMG2302UK-7 DMG2302UK-7 Diodes Incorporated DMG2302UK.pdf Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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DMPH6050SK3-13 DMPH6050SK3-13 Diodes Incorporated DMPH6050SK3.pdf Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
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DMT3006LDK-7 DMT3006LDK-7 Diodes Incorporated DMT3006LDK.pdf Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
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DMT6004SCT DMT6004SCT Diodes Incorporated DMT6004SCT.pdf Description: MOSFET N-CH 60V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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DRTR5V0U4LP16-7 DRTR5V0U4LP16-7 Diodes Incorporated DRTR5V0U4LP16.pdf Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: U-DFN1616-6
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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SBR2U100LP-7 SBR2U100LP-7 Diodes Incorporated SBR2U100LP.pdf Description: DIODE SBR 100V 1.5A X1DFN14113
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
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SBR2U60S1F-7 SBR2U60S1F-7 Diodes Incorporated SBR2U60S1F.pdf Description: DIODE SBR 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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D22V0S1U2WS-7 D22V0S1U2WS-7 Diodes Incorporated D22V0S1U2WS.pdf Description: TVS DIODE 22VWM 37VC SOD323
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 37V
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 220pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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D5V0M1U2LP3-7 D5V0M1U2LP3-7 Diodes Incorporated D5V0M1U2LP3.pdf Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6.2V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
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DMG2302UK-7 DMG2302UK-7 Diodes Incorporated DMG2302UK.pdf Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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DMPH6050SK3-13 DMPH6050SK3-13 Diodes Incorporated DMPH6050SK3.pdf Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
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DMT3006LDK-7 DMT3006LDK-7 Diodes Incorporated DMT3006LDK.pdf Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
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DMT3009LDT-7 DMT3009LDT-7 Diodes Incorporated DMT3009LDT.pdf Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
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DRTR5V0U4LP16-7 DRTR5V0U4LP16-7 Diodes Incorporated DRTR5V0U4LP16.pdf Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
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SBR2U100LP-7 SBR2U100LP-7 Diodes Incorporated SBR2U100LP.pdf Description: DIODE SBR 100V 1.5A X1DFN14113
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
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SBR2U60S1F-7 SBR2U60S1F-7 Diodes Incorporated SBR2U60S1F.pdf Description: DIODE SBR 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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ZXMP10A17GQTA ZXMP10A17GQTA Diodes Incorporated ZXMP10A17GQ.pdf Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Qualification: AEC-Q101
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DMP3130LQ-7 DMP3130LQ-7 Diodes Incorporated DMP3130LQ.pdf Description: MOSFET P-CH 30V 3.5A SOT23
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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BAV199DWQ-7-F BAV199DWQ-7-F Diodes Incorporated BAV199DWQ.pdf Description: DIODE ARRAY GP 85V 140MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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B340BQ-13-F B340BQ-13-F Diodes Incorporated B340BQ-B360BQ.pdf Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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DMP3130LQ-7 DMP3130LQ-7 Diodes Incorporated DMP3130LQ.pdf Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Qualification: AEC-Q101
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BAV199DWQ-7-F BAV199DWQ-7-F Diodes Incorporated BAV199DWQ.pdf Description: DIODE ARRAY GP 85V 140MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
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B340BQ-13-F B340BQ-13-F Diodes Incorporated B340BQ-B360BQ.pdf Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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DMP4010SK3Q-13 DMP4010SK3Q-13 Diodes Incorporated DMP4010SK3Q.pdf Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
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DMN6040SSDQ-13 DMN6040SSDQ-13 Diodes Incorporated DMN6040SSDQ.pdf Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMP4010SK3Q-13 DMP4010SK3Q-13 Diodes Incorporated DMP4010SK3Q.pdf Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
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DMN6040SSDQ-13 DMN6040SSDQ-13 Diodes Incorporated DMN6040SSDQ.pdf Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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B340Q-13-F B340Q-13-F Diodes Incorporated B320Q-B360Q.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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AP3125CMKTR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
Produkt ist nicht verfügbar
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DMC1015UPD-13 DMC1015UPD-13 Diodes Incorporated DMC1015UPD.pdf Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
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DMC1016UPD-13 DMC1016UPD-13 Diodes Incorporated DMC1016UPD.pdf Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
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DSS4160FDB-7 DSS4160FDB-7 Diodes Incorporated DSS4160FDB.pdf Description: TRANS NPH U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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DSS45160FDB-7 DSS45160FDB-7 Diodes Incorporated DSS45160FDB.pdf Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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SBR20B100CT SBR20B100CT Diodes Incorporated Description: DIODE ARRAY SBR 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
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SBR30E100CT SBR30E100CT Diodes Incorporated SBR30E100CT.pdf Description: DIODE SBR 100V 15A TO220AB
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SDM05U20CSP-7 SDM05U20CSP-7 Diodes Incorporated SDM05U20CSP.pdf Description: DIODE SCHOT 20V 500MA X3WLB10062
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
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SDM2U40CSP-7B SDM2U40CSP-7B Diodes Incorporated SDM2U40CSP.pdf Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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AP3125CMKTR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
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DMC1015UPD-13 DMC1015UPD-13 Diodes Incorporated DMC1015UPD.pdf Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
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DMC1016UPD-13 DMC1016UPD-13 Diodes Incorporated DMC1016UPD.pdf Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
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DSS4160FDB-7 DSS4160FDB-7 Diodes Incorporated DSS4160FDB.pdf Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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DSS45160FDB-7 DSS45160FDB-7 Diodes Incorporated DSS45160FDB.pdf Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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SDM05U20CSP-7 SDM05U20CSP-7 Diodes Incorporated SDM05U20CSP.pdf Description: DIODE SCHOT 20V 500MA X3WLB10062
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
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PI7VD9004ACHFCIE
PI7VD9004ACHFCIE
Hersteller: Diodes Incorporated
Description: IC VIDEO DECODER 80LQFP
Packaging: Tray
Package / Case: 80-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Decoder
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: 80-LQFP (10x10)
Part Status: Obsolete
Control Interface: I²C, I²S
Produkt ist nicht verfügbar
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BAV199WQ-7 BAV199WQ.pdf
BAV199WQ-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT46WQ-7-F BAT46WQ.pdf
BAT46WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
Qualification: AEC-Q101
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74LVC1G3157DW-7 74LVC1G3157.pdf
74LVC1G3157DW-7
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 1 10OHM SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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74LVC1G3157FZ4-7 74LVC1G3157.pdf
74LVC1G3157FZ4-7
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 1 10OHM 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: X2-DFN1410-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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B190BQ-13-F B170BQ-B180BQ-B190BQ-B1100BQ.pdf
B190BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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BAV199WQ-7 BAV199WQ.pdf
BAV199WQ-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT46WQ-7-F BAT46WQ.pdf
BAT46WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 1V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
Qualification: AEC-Q101
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74LVC1G3157DW-7 74LVC1G3157.pdf
74LVC1G3157DW-7
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 1 10OHM SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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74LVC1G3157FZ4-7 74LVC1G3157.pdf
74LVC1G3157FZ4-7
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 1 10OHM 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: X2-DFN1410-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm
Switch Time (Ton, Toff) (Max): 4ns, 7.5ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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B190BQ-13-F B170BQ-B180BQ-B190BQ-B1100BQ.pdf
B190BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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BAV199Q-7-F ds30232.pdf
BAV199Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.12 EUR
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BAV199Q-7-F ds30232.pdf
BAV199Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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71+0.3 EUR
82+0.26 EUR
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ZXLD1366QET5TA ZXLD1366Q.pdf
ZXLD1366QET5TA
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 1A TSOT25
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ZXLD1366QEN8TC ZXLD1366Q.pdf
ZXLD1366QEN8TC
Hersteller: Diodes Incorporated
Description: IC LED DRIVER RGLTR PWM 1A 8SO
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 60V
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 60V
Voltage - Supply (Min): 6V
Dimming: PWM
Supplier Device Package: 8-SO-EP
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Current - Output / Channel: 1A
Applications: Lighting
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Regulator
Frequency: 1MHz
Produkt ist nicht verfügbar
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D22V0S1U2WS-7 D22V0S1U2WS.pdf
D22V0S1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 37VC SOD323
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 37V
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 220pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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3000+0.23 EUR
9000+0.19 EUR
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D5V0M1U2LP3-7 D5V0M1U2LP3.pdf
D5V0M1U2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6.2V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
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DMG2302UK-7 DMG2302UK.pdf
DMG2302UK-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.14 EUR
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DMPH6050SK3-13 DMPH6050SK3.pdf
DMPH6050SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Produkt ist nicht verfügbar
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DMT3006LDK-7 DMT3006LDK.pdf
DMT3006LDK-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Produkt ist nicht verfügbar
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DMT6004SCT DMT6004SCT.pdf
DMT6004SCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 139737 Stücke:
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5+4.77 EUR
50+2.36 EUR
100+2.12 EUR
500+1.7 EUR
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5000+1.45 EUR
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DRTR5V0U4LP16-7 DRTR5V0U4LP16.pdf
DRTR5V0U4LP16-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: U-DFN1616-6
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SBR2U100LP-7 SBR2U100LP.pdf
SBR2U100LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 1.5A X1DFN14113
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 54000 Stücke:
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3000+0.42 EUR
9000+0.37 EUR
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SBR2U60S1F-7 SBR2U60S1F.pdf
SBR2U60S1F-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 216000 Stücke:
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3000+0.3 EUR
9000+0.26 EUR
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D22V0S1U2WS-7 D22V0S1U2WS.pdf
D22V0S1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 22VWM 37VC SOD323
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Voltage - Clamping (Max) @ Ipp: 37V
Voltage - Breakdown (Min): 24V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 220pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 14730 Stücke:
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21+1.02 EUR
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41+0.52 EUR
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D5V0M1U2LP3-7 D5V0M1U2LP3.pdf
D5V0M1U2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6.2V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 13955 Stücke:
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77+0.27 EUR
108+0.19 EUR
250+0.083 EUR
500+0.079 EUR
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5000+0.07 EUR
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DMG2302UK-7 DMG2302UK.pdf
DMG2302UK-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 83870 Stücke:
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31+0.69 EUR
49+0.43 EUR
60+0.36 EUR
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DMPH6050SK3-13 DMPH6050SK3.pdf
DMPH6050SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
auf Bestellung 377 Stücke:
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11+1.99 EUR
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DMT3006LDK-7 DMT3006LDK.pdf
DMT3006LDK-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
auf Bestellung 2278 Stücke:
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14+1.55 EUR
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27+0.8 EUR
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DMT3009LDT-7 DMT3009LDT.pdf
DMT3009LDT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
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8+2.98 EUR
12+1.88 EUR
25+1.58 EUR
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DRTR5V0U4LP16-7 DRTR5V0U4LP16.pdf
DRTR5V0U4LP16-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 2216 Stücke:
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20+1.07 EUR
32+0.67 EUR
38+0.55 EUR
50+0.49 EUR
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SBR2U100LP-7 SBR2U100LP.pdf
SBR2U100LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 1.5A X1DFN14113
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 55643 Stücke:
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12+1.76 EUR
20+1.09 EUR
25+0.92 EUR
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100+0.71 EUR
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SBR2U60S1F-7 SBR2U60S1F.pdf
SBR2U60S1F-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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ZXMP10A17GQTA ZXMP10A17GQ.pdf
ZXMP10A17GQTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 74363 Stücke:
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DMP3130LQ-7 DMP3130LQ.pdf
DMP3130LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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BAV199DWQ-7-F BAV199DWQ.pdf
BAV199DWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B340BQ-13-F B340BQ-B360BQ.pdf
B340BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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3000+0.18 EUR
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DMP3130LQ-7 DMP3130LQ.pdf
DMP3130LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Qualification: AEC-Q101
auf Bestellung 31286 Stücke:
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BAV199DWQ-7-F BAV199DWQ.pdf
BAV199DWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B340BQ-13-F B340BQ-B360BQ.pdf
B340BQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 96208 Stücke:
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72+0.3 EUR
98+0.21 EUR
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DMP4010SK3Q-13 DMP4010SK3Q.pdf
DMP4010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN6040SSDQ-13 DMN6040SSDQ.pdf
DMN6040SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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2500+0.42 EUR
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DMP4010SK3Q-13 DMP4010SK3Q.pdf
DMP4010SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
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DMN6040SSDQ-13 DMN6040SSDQ.pdf
DMN6040SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 911975 Stücke:
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17+1.26 EUR
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100+0.74 EUR
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B340Q-13-F B320Q-B360Q.pdf
B340Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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16+1.32 EUR
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AP3125CMKTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
Produkt ist nicht verfügbar
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DMC1015UPD-13 DMC1015UPD.pdf
DMC1015UPD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
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2500+0.57 EUR
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DMC1016UPD-13 DMC1016UPD.pdf
DMC1016UPD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Produkt ist nicht verfügbar
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DSS4160FDB-7 DSS4160FDB.pdf
DSS4160FDB-7
Hersteller: Diodes Incorporated
Description: TRANS NPH U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
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DSS45160FDB-7 DSS45160FDB.pdf
DSS45160FDB-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
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SBR20B100CT
SBR20B100CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
Produkt ist nicht verfügbar
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SBR30E100CT SBR30E100CT.pdf
SBR30E100CT
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 15A TO220AB
Produkt ist nicht verfügbar
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SDM05U20CSP-7 SDM05U20CSP.pdf
SDM05U20CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOT 20V 500MA X3WLB10062
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
auf Bestellung 155000 Stücke:
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5000+0.18 EUR
15000+0.15 EUR
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SDM2U40CSP-7B SDM2U40CSP.pdf
SDM2U40CSP-7B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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10000+0.2 EUR
30000+0.18 EUR
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AP3125CMKTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
auf Bestellung 3057 Stücke:
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AnzahlPrivatkunde
28+0.75 EUR
41+0.52 EUR
46+0.46 EUR
100+0.4 EUR
250+0.37 EUR
500+0.36 EUR
1000+0.35 EUR
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DMC1015UPD-13 DMC1015UPD.pdf
DMC1015UPD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
auf Bestellung 8159 Stücke:
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AnzahlPrivatkunde
10+2.24 EUR
15+1.4 EUR
100+0.92 EUR
500+0.71 EUR
1000+0.64 EUR
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DMC1016UPD-13 DMC1016UPD.pdf
DMC1016UPD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 2504 Stücke:
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AnzahlPrivatkunde
10+2.18 EUR
16+1.37 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
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DSS4160FDB-7 DSS4160FDB.pdf
DSS4160FDB-7
Hersteller: Diodes Incorporated
Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 55 Stücke:
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17+1.26 EUR
20+1.08 EUR
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DSS45160FDB-7 DSS45160FDB.pdf
DSS45160FDB-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
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SDM05U20CSP-7 SDM05U20CSP.pdf
SDM05U20CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOT 20V 500MA X3WLB10062
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
auf Bestellung 161581 Stücke:
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AnzahlPrivatkunde
24+0.88 EUR
39+0.55 EUR
47+0.45 EUR
54+0.39 EUR
100+0.35 EUR
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