Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (74603) > Seite 328 nach 1244
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AZV3002S-13 | Diodes Incorporated |
Description: IC COMP PUSH PULL 8SO |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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AZV3002RL-7 | Diodes Incorporated |
Description: IC COMPAR 2 GEN PUR U-FLGA1616-8Packaging: Cut Tape (CT) Package / Case: 8-UFLGA Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V Supplier Device Package: U-FLGA1616-8 Propagation Delay (Max): 0.8µs Current - Quiescent (Max): 6µA (Typ) Voltage - Input Offset (Max): 30mV Current - Input Bias (Max): 1pA Current - Output (Typ): 68mA CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR Hysteresis: 13mV Part Status: Active |
auf Bestellung 42195 Stücke: Lieferzeit 10-14 Tag (e) |
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AZV3002S-13 | Diodes Incorporated |
Description: IC COMP PUSH PULL 8SO |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTR2112FQ-7 | Diodes Incorporated |
Description: IC REG LINEAR 12V 15MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 15mA Operating Temperature: -65°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 360 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 12V Grade: Automotive Part Status: Active PSRR: 50dB (100Hz) Current - Supply (Max): 6 mA Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP9234LA-AO-HSB-7 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL 6UDFN |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DDZX5V1BQ-7 | Diodes Incorporated |
Description: DIODE ZENER 5.1V 300MW SOT23 |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3008SFGQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3008SFGQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ1117IH-ADJTRG1 | Diodes Incorporated |
Description: IC REG LIN POS ADJ 1A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Max): 13.7V Voltage - Output (Min/Fixed): 1.25V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ1117IH-3.3TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 3.3V 1A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
auf Bestellung 64000 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ1117IH-5.0TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 5V 1A SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
auf Bestellung 188000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTR2112FQ-7 | Diodes Incorporated |
Description: IC REG LINEAR 12V 15MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 15mA Operating Temperature: -65°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 360 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 12V Grade: Automotive Part Status: Active PSRR: 50dB (100Hz) Current - Supply (Max): 6 mA Qualification: AEC-Q101 |
auf Bestellung 32858 Stücke: Lieferzeit 10-14 Tag (e) |
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AP9234LA-AO-HSB-7 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL 6UDFN |
auf Bestellung 14505 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DDZX5V1BQ-7 | Diodes Incorporated |
Description: DIODE ZENER 5.1V 300MW SOT23 |
auf Bestellung 72621 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3008SFGQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 50514 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ1117IH-ADJTRG1 | Diodes Incorporated |
Description: IC REG LIN POS ADJ 1A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Max): 13.7V Voltage - Output (Min/Fixed): 1.25V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
auf Bestellung 59357 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ1117IH-3.3TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 3.3V 1A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
auf Bestellung 66721 Stücke: Lieferzeit 10-14 Tag (e) |
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AZ1117IH-5.0TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 5V 1A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 15V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (120Hz) Voltage Dropout (Max): 1.3V @ 800mA Protection Features: Thermal Shutdown |
auf Bestellung 189117 Stücke: Lieferzeit 10-14 Tag (e) |
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AH5775-P-B | Diodes Incorporated |
Description: IC MOTOR DRIVER 2.5V-18V TO94Packaging: Bulk Package / Case: 4-SSIP Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 300mA Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.5V ~ 18V Applications: Fan Motor Driver Technology: Power MOSFET Voltage - Load: 2.5V ~ 18V Supplier Device Package: TO-94 Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMC2450UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DML1005LDS-7 | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8VDFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 3.8mOhm Voltage - Load: 0.8V ~ 4V Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMN63D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
auf Bestellung 207000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH10H028SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V |
auf Bestellung 195000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH4006SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 18A/90A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP10H4D2S-7 | Diodes Incorporated |
Description: MOSFET P-CH 100V 270MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP510DL-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 7.3A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 107500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 57500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6004LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 22A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.1W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.8A TO252 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMTH6010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-13 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 4294967295 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-7 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15004500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-7D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15006000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR8E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 350 µA @ 45 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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D14V0S1U2WS-7 | Diodes Incorporated |
Description: TVS DIODE 14VWM 26VC SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 360pF @ 1MHz Current - Peak Pulse (10/1000µs): 50A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: SOD-323 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.5V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1300W (1.3kW) Power Line Protection: No |
auf Bestellung 48136 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2450UV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 3635 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN63D8L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
auf Bestellung 209519 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH10H028SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V |
auf Bestellung 195000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH4006SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 18A/90A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP10H4D2S-7 | Diodes Incorporated |
Description: MOSFET P-CH 100V 270MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V |
auf Bestellung 6002 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP510DL-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V |
auf Bestellung 37118 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 108296 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 7.3A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 108220 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT10H015LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.3A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V |
auf Bestellung 58894 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6004LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 22A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.1W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V |
auf Bestellung 13622 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.8A TO252 |
auf Bestellung 2197 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMTH6010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-13 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 4294967295 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-7 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15004500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-7D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15006000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR8E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 8A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 350 µA @ 45 V |
auf Bestellung 13400 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-13 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 4294967295 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-7 | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15004500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SBR5E45P5-7D | Diodes Incorporated |
Description: DIODE RECT SBR 45V 5A POWERDI5 |
auf Bestellung 15006000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AL5801EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL5801Packaging: Box Voltage - Input: 3.5V ~ 20V Current - Output / Channel: 350mA Utilized IC / Part: AL5801 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AL5802EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL5802Packaging: Box Voltage - Input: 4.5V ~ 30V Current - Output / Channel: 120mA Utilized IC / Part: AL5802 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AL8400EV1 | Diodes Incorporated |
Description: EVAL BOARD FOR AL8400Packaging: Box Voltage - Input: 4V ~ 18V Current - Output / Channel: 150mA Utilized IC / Part: AL8400 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AZV3002S-13 |
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Hersteller: Diodes Incorporated
Description: IC COMP PUSH PULL 8SO
Description: IC COMP PUSH PULL 8SO
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 5000+ | 0.31 EUR |
| 12500+ | 0.3 EUR |
| AZV3002RL-7 |
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Hersteller: Diodes Incorporated
Description: IC COMPAR 2 GEN PUR U-FLGA1616-8
Packaging: Cut Tape (CT)
Package / Case: 8-UFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Supplier Device Package: U-FLGA1616-8
Propagation Delay (Max): 0.8µs
Current - Quiescent (Max): 6µA (Typ)
Voltage - Input Offset (Max): 30mV
Current - Input Bias (Max): 1pA
Current - Output (Typ): 68mA
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Hysteresis: 13mV
Part Status: Active
Description: IC COMPAR 2 GEN PUR U-FLGA1616-8
Packaging: Cut Tape (CT)
Package / Case: 8-UFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Supplier Device Package: U-FLGA1616-8
Propagation Delay (Max): 0.8µs
Current - Quiescent (Max): 6µA (Typ)
Voltage - Input Offset (Max): 30mV
Current - Input Bias (Max): 1pA
Current - Output (Typ): 68mA
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Hysteresis: 13mV
Part Status: Active
auf Bestellung 42195 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 24+ | 0.75 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.47 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| AZV3002S-13 |
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Hersteller: Diodes Incorporated
Description: IC COMP PUSH PULL 8SO
Description: IC COMP PUSH PULL 8SO
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 22+ | 0.81 EUR |
| 25+ | 0.75 EUR |
| 100+ | 0.6 EUR |
| 250+ | 0.56 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.37 EUR |
| ZXTR2112FQ-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.25 EUR |
| 21000+ | 0.24 EUR |
| AP9234LA-AO-HSB-7 |
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Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Description: IC BATT PROT LI-ION 1CELL 6UDFN
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DDZX5V1BQ-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Description: DIODE ZENER 5.1V 300MW SOT23
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.092 EUR |
| 15000+ | 0.078 EUR |
| 30000+ | 0.074 EUR |
| DMP3008SFGQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.79 EUR |
| 4000+ | 0.78 EUR |
| 6000+ | 0.77 EUR |
| DMP3008SFGQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.79 EUR |
| 6000+ | 0.77 EUR |
| AZ1117IH-ADJTRG1 |
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Hersteller: Diodes Incorporated
Description: IC REG LIN POS ADJ 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 13.7V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LIN POS ADJ 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 13.7V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| AZ1117IH-3.3TRG1 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 64000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| AZ1117IH-5.0TRG1 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 188000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| ZXTR2112FQ-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
auf Bestellung 32858 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 42+ | 0.42 EUR |
| 47+ | 0.38 EUR |
| 100+ | 0.33 EUR |
| 250+ | 0.3 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
| AP9234LA-AO-HSB-7 |
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Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Description: IC BATT PROT LI-ION 1CELL 6UDFN
auf Bestellung 14505 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DDZX5V1BQ-7 |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Description: DIODE ZENER 5.1V 300MW SOT23
auf Bestellung 72621 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| DMP3008SFGQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 50514 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.45 EUR |
| 11+ | 1.72 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.92 EUR |
| AZ1117IH-ADJTRG1 |
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Hersteller: Diodes Incorporated
Description: IC REG LIN POS ADJ 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 13.7V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LIN POS ADJ 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 13.7V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 59357 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 73+ | 0.24 EUR |
| 82+ | 0.22 EUR |
| 100+ | 0.18 EUR |
| 250+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| AZ1117IH-3.3TRG1 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 66721 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 73+ | 0.24 EUR |
| 82+ | 0.22 EUR |
| 100+ | 0.18 EUR |
| 250+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| AZ1117IH-5.0TRG1 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 189117 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 73+ | 0.24 EUR |
| 82+ | 0.22 EUR |
| 100+ | 0.18 EUR |
| 250+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| AH5775-P-B |
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Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2.5V-18V TO94
Packaging: Bulk
Package / Case: 4-SSIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 18V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 18V
Supplier Device Package: TO-94
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 2.5V-18V TO94
Packaging: Bulk
Package / Case: 4-SSIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 18V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 18V
Supplier Device Package: TO-94
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMC2450UV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| DML1005LDS-7 |
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Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.8mOhm
Voltage - Load: 0.8V ~ 4V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.8mOhm
Voltage - Load: 0.8V ~ 4V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN63D8L-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.053 EUR |
| 6000+ | 0.05 EUR |
| 9000+ | 0.041 EUR |
| 15000+ | 0.039 EUR |
| 30000+ | 0.037 EUR |
| DMNH10H028SK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.91 EUR |
| 5000+ | 0.87 EUR |
| 12500+ | 0.85 EUR |
| DMNH4006SK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.24 EUR |
| 5000+ | 1.19 EUR |
| DMP10H4D2S-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| DMP510DL-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.082 EUR |
| 6000+ | 0.074 EUR |
| 9000+ | 0.072 EUR |
| 30000+ | 0.07 EUR |
| DMT10H015LFG-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.64 EUR |
| 4000+ | 0.6 EUR |
| 6000+ | 0.59 EUR |
| DMT10H015LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.68 EUR |
| 5000+ | 0.67 EUR |
| DMT10H015LSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 57500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.71 EUR |
| 5000+ | 0.66 EUR |
| DMT6004LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.9 EUR |
| 5000+ | 0.87 EUR |
| DMTH6010LK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A TO252
Description: MOSFET N-CH 60V 14.8A TO252
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMTH6010LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-13 |
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Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-7 |
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Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-7D |
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Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR8E45P5-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.32 EUR |
| 3000+ | 0.31 EUR |
| 4500+ | 0.3 EUR |
| 7500+ | 0.29 EUR |
| D14V0S1U2WS-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
auf Bestellung 48136 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 47+ | 0.38 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| DMC2450UV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3635 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.18 EUR |
| DMN63D8L-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 209519 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 89+ | 0.2 EUR |
| 170+ | 0.1 EUR |
| 500+ | 0.076 EUR |
| 1000+ | 0.073 EUR |
| DMNH10H028SK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.26 EUR |
| DMNH4006SK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.83 EUR |
| DMP10H4D2S-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 6002 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 44+ | 0.4 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.16 EUR |
| DMP510DL-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 37118 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 60+ | 0.3 EUR |
| 113+ | 0.16 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| DMT10H015LFG-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108296 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.74 EUR |
| DMT10H015LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108220 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 13+ | 1.44 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.81 EUR |
| DMT10H015LSS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 58894 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.62 EUR |
| 11+ | 1.65 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| DMT6004LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 13622 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.34 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.07 EUR |
| DMTH6010LK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A TO252
Description: MOSFET N-CH 60V 14.8A TO252
auf Bestellung 2197 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DMTH6010LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-13 |
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Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-7 |
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Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-7D |
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Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR8E45P5-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 13400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.43 EUR |
| DMTH6010LPS-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-13 |
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Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-7 |
![]() |
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SBR5E45P5-7D |
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Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| AL5801EV1 |
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Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL5802EV1 |
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Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AL8400EV1 |
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Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH















