Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (73201) > Seite 338 nach 1221

Wählen Sie Seite:   [  << Vorherige Seite ]  1 122 244 333 334 335 336 337 338 339 340 341 342 343 366 488 610 732 854 976 1098 1220 1221  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
FN2500140 FN2500140 Diodes Incorporated FN2500140_B.pdf Description: XTAL OSC XO 25.000625MHZ CMOS
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FD2450017 FD2450017 Diodes Incorporated FD2450017_D.pdf Description: XTAL OSC XO 24.5760MHZ LVCMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC500026 FDC500026 Diodes Incorporated FDC500026_C.pdf Description: XTAL OSC XO 125.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 20mA
Height - Seated (Max): 0.051" (1.30mm)
Part Status: Active
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FK2400017 FK2400017 Diodes Incorporated FK2400017_B.pdf Description: XTAL OSC XO 24.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24 MHz
Base Resonator: Crystal
auf Bestellung 21713 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
10+2.47 EUR
50+2.41 EUR
100+2.07 EUR
500+2.01 EUR
1000+1.7 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FK2450016 FK2450016 Diodes Incorporated FK2450016_A.pdf Description: XTAL OSC XO 24.5760MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FK2500025 FK2500025 Diodes Incorporated FK2500025_D.pdf Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 25 MHz
Base Resonator: Crystal
auf Bestellung 9702 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.82 EUR
10+9.42 EUR
25+8.91 EUR
50+8.54 EUR
100+8.19 EUR
250+8.11 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FK2500067 FK2500067 Diodes Incorporated FK2500067_A.pdf Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 25 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
auf Bestellung 6747 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
11+1.67 EUR
25+1.58 EUR
50+1.52 EUR
100+1.45 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.26 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FN0200045 FN0200045 Diodes Incorporated FN0200045_F.pdf Description: XTAL OSC XO 2.0480MHZ LVCMOS SMD
Base Resonator: Crystal
Frequency: 2.048 MHz
Height - Seated (Max): 0.071" (1.80mm)
Supplier Device Package: 4-SMD (7x5)
Current - Supply (Max): 15mA
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FN2500140 FN2500140 Diodes Incorporated FN2500140_B.pdf Description: XTAL OSC XO 25.000625MHZ CMOS
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FN4800068 FN4800068 Diodes Incorporated FN4800068_E.pdf Description: XTAL OSC XO 48.0000MHZ LVCMOS
Frequency: 48 MHz
Height - Seated (Max): 0.071" (1.80mm)
Current - Supply (Max): 25mA
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Base Resonator: Crystal
auf Bestellung 62000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.18 EUR
10+2.09 EUR
50+2.04 EUR
100+1.75 EUR
500+1.7 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FNC500131 FNC500131 Diodes Incorporated FNC500131_D.pdf Description: XTAL OSC XO 125.0000MHZ LVCMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8019KGR PAM8019KGR Diodes Incorporated PAM8019.pdf Description: IC AMP D/AB STER 3W U-QFN4040-20
Packaging: Tape & Reel (TR)
Features: Mute, Short-Circuit and Thermal Protection
Package / Case: 20-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class D, Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: U-QFN4040-20
Part Status: Active
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.51 EUR
6000+0.5 EUR
9000+0.49 EUR
21000+0.48 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PAM8019KGR PAM8019KGR Diodes Incorporated PAM8019.pdf Description: IC AMP D/AB STER 3W U-QFN4040-20
Packaging: Cut Tape (CT)
Features: Mute, Short-Circuit and Thermal Protection
Package / Case: 20-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class D, Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: U-QFN4040-20
Part Status: Active
auf Bestellung 131659 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
23+0.8 EUR
25+0.72 EUR
100+0.63 EUR
250+0.58 EUR
500+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16HTW-13 BAS16HTW-13 Diodes Incorporated BAS16HTW.pdf Description: DIODE ARRAY GP 100V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.088 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS28-7 BAS28-7 Diodes Incorporated BAS28.pdf Description: DIODE ARRAY GP 85V 215MA SOT-143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR401UW6-7 BCR401UW6-7 Diodes Incorporated BCR401UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
6000+0.17 EUR
21000+0.16 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR402UW6-7 BCR402UW6-7 Diodes Incorporated BCR402UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
6000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR405UW6-7 BCR405UW6-7 Diodes Incorporated BCR405UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Internal Switch(s): No
Current - Output / Channel: 50mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
auf Bestellung 720000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+0.2 EUR
15000+0.19 EUR
30000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DM1231-02SO-7 DM1231-02SO-7 Diodes Incorporated Description: TVS DIODE 5VWM 14VC SOT26
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-26
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
21000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMC3730UFL3-7 DMC3730UFL3-7 Diodes Incorporated DMC3730UFL3.pdf Description: MOSFET N/P-CH 30V 6DFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.15 EUR
9000+0.13 EUR
30000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2301LK-7 DMG2301LK-7 Diodes Incorporated DMG2301LK.pdf Description: MOSFET P-CH 20V 2.4A SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
30000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMHC6070LSD-13 DMHC6070LSD-13 Diodes Incorporated DMHC6070LSD.pdf Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.71 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-7 DMN10H700S-7 Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.12 EUR
15000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN1150UFL3-7 DMN1150UFL3-7 Diodes Incorporated DMN1150UFL3.pdf Description: MOSFET 2N-CH 12V 2A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 12V
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2008LFU-7 DMN2008LFU-7 Diodes Incorporated DMN2008LFU.pdf Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.4 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP6350S-7 DMP6350S-7 Diodes Incorporated DMP6350S.pdf Description: MOSFET P-CH 60V 1.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFG-7 DMT3006LFG-7 Diodes Incorporated DMT3006LFG.pdf Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.52 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LPS-13 DMT3006LPS-13 Diodes Incorporated DMT3006LPS.pdf Description: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.37 EUR
5000+0.34 EUR
7500+0.32 EUR
12500+0.31 EUR
17500+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-7 DMT3020LFDB-7 Diodes Incorporated DMT3020LFDB.pdf Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDF-7 DMT3020LFDF-7 Diodes Incorporated DMT3020LFDF.pdf Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT4004LPS-13 DMT4004LPS-13 Diodes Incorporated DMT4004LPS.pdf Description: MOSFET N-CH 40V 26A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 355000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.68 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LPS-13 DMT6005LPS-13 Diodes Incorporated DMT6005LPS.pdf Description: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LSS-13 DMT6005LSS-13 Diodes Incorporated DMT6005LSS.pdf Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.01 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6009LCT DMT6009LCT Diodes Incorporated DMT6009LCT.pdf Description: MOSFET N-CH 60V 37.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 2033 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.29 EUR
50+1.08 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
2000+0.63 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6009LPS-13 DMT6009LPS-13 Diodes Incorporated DMT6009LPS.pdf Description: MOSFET N-CHA 60V 10.6A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6015LSS-13 DMT6015LSS-13 Diodes Incorporated DMT6015LSS.pdf Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 192500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.46 EUR
5000+0.43 EUR
7500+0.41 EUR
12500+0.39 EUR
17500+0.38 EUR
25000+0.36 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6017LSS-13 DMT6017LSS-13 Diodes Incorporated DMT6017LSS.pdf Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6009LPS-13 DMTH6009LPS-13 Diodes Incorporated DMTH6009LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 320000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.51 EUR
5000+0.47 EUR
7500+0.45 EUR
12500+0.44 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LPD-13 DMTH6010LPD-13 Diodes Incorporated DMTH6010LPD.pdf Description: MOSFET 2N-CH 60V 13.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.73 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT3U60SAF-13 SBRT3U60SAF-13 Diodes Incorporated SBRT3U60SAF.pdf Description: DIODE SBR 60V 3A SMAF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.19 EUR
20000+0.18 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT40V100CTE SBRT40V100CTE Diodes Incorporated SBRT40V100CT.pdf Description: DIODE ARR SBR 100V 20A TO262
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-262
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
50+2.26 EUR
100+1.86 EUR
500+1.57 EUR
1000+1.33 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16HTW-13 BAS16HTW-13 Diodes Incorporated BAS16HTW.pdf Description: DIODE ARRAY GP 100V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 10206 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.097 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS28-7 BAS28-7 Diodes Incorporated BAS28.pdf Description: DIODE ARRAY GP 85V 215MA SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR401UW6-7 BCR401UW6-7 Diodes Incorporated BCR401UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31488 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
60+0.3 EUR
68+0.26 EUR
100+0.22 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR402UW6-7 BCR402UW6-7 Diodes Incorporated BCR402UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11620 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
60+0.3 EUR
67+0.26 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR405UW6-7 BCR405UW6-7 Diodes Incorporated BCR405UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): No
Current - Output / Channel: 50mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 723335 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
29+0.62 EUR
32+0.56 EUR
100+0.42 EUR
250+0.38 EUR
500+0.32 EUR
1000+0.24 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DM1231-02SO-7 DM1231-02SO-7 Diodes Incorporated Description: TVS DIODE 5VWM 14VC SOT26
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-26
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 108639 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
49+0.36 EUR
100+0.25 EUR
500+0.19 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMC3730UFL3-7 DMC3730UFL3-7 Diodes Incorporated DMC3730UFL3.pdf Description: MOSFET N/P-CH 30V 6DFN
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 35669 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2301LK-7 DMG2301LK-7 Diodes Incorporated DMG2301LK.pdf Description: MOSFET P-CH 20V 2.4A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 32906 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
41+0.43 EUR
100+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMHC6070LSD-13 DMHC6070LSD-13 Diodes Incorporated DMHC6070LSD.pdf Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6573 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
10+1.77 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-7 DMN10H700S-7 Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 31696 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
32+0.55 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN1150UFL3-7 DMN1150UFL3-7 Diodes Incorporated DMN1150UFL3.pdf Description: MOSFET 2N-CH 12V 2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2008LFU-7 DMN2008LFU-7 Diodes Incorporated DMN2008LFU.pdf Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 3590 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.64 EUR
18+1.02 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP6350S-7 DMP6350S-7 Diodes Incorporated DMP6350S.pdf Description: MOSFET P-CH 60V 1.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 8435 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
29+0.62 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFG-7 DMT3006LFG-7 Diodes Incorporated DMT3006LFG.pdf Description: MOSFET N-CH 30V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3455 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LPS-13 DMT3006LPS-13 Diodes Incorporated DMT3006LPS.pdf Description: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 69958 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-7 DMT3020LFDB-7 Diodes Incorporated DMT3020LFDB.pdf Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
17+1.06 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.48 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDF-7 DMT3020LFDF-7 Diodes Incorporated DMT3020LFDF.pdf Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT4004LPS-13 DMT4004LPS-13 Diodes Incorporated DMT4004LPS.pdf Description: MOSFET N-CH 40V 26A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 356008 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
13+1.44 EUR
100+1.01 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LPS-13 DMT6005LPS-13 Diodes Incorporated DMT6005LPS.pdf Description: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
11+1.7 EUR
100+1.14 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FN2500140 FN2500140_B.pdf
FN2500140
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.000625MHZ CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FD2450017 FD2450017_D.pdf
FD2450017
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ LVCMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC500026 FDC500026_C.pdf
FDC500026
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 20mA
Height - Seated (Max): 0.051" (1.30mm)
Part Status: Active
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FK2400017 FK2400017_B.pdf
FK2400017
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24 MHz
Base Resonator: Crystal
auf Bestellung 21713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.59 EUR
10+2.47 EUR
50+2.41 EUR
100+2.07 EUR
500+2.01 EUR
1000+1.7 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FK2450016 FK2450016_A.pdf
FK2450016
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FK2500025 FK2500025_D.pdf
FK2500025
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 25 MHz
Base Resonator: Crystal
auf Bestellung 9702 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.82 EUR
10+9.42 EUR
25+8.91 EUR
50+8.54 EUR
100+8.19 EUR
250+8.11 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FK2500067 FK2500067_A.pdf
FK2500067
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 25 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
auf Bestellung 6747 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.92 EUR
11+1.67 EUR
25+1.58 EUR
50+1.52 EUR
100+1.45 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.26 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FN0200045 FN0200045_F.pdf
FN0200045
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 2.0480MHZ LVCMOS SMD
Base Resonator: Crystal
Frequency: 2.048 MHz
Height - Seated (Max): 0.071" (1.80mm)
Supplier Device Package: 4-SMD (7x5)
Current - Supply (Max): 15mA
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FN2500140 FN2500140_B.pdf
FN2500140
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.000625MHZ CMOS
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FN4800068 FN4800068_E.pdf
FN4800068
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 48.0000MHZ LVCMOS
Frequency: 48 MHz
Height - Seated (Max): 0.071" (1.80mm)
Current - Supply (Max): 25mA
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVCMOS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Base Resonator: Crystal
auf Bestellung 62000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.18 EUR
10+2.09 EUR
50+2.04 EUR
100+1.75 EUR
500+1.7 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FNC500131 FNC500131_D.pdf
FNC500131
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ LVCMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PAM8019KGR PAM8019.pdf
PAM8019KGR
Hersteller: Diodes Incorporated
Description: IC AMP D/AB STER 3W U-QFN4040-20
Packaging: Tape & Reel (TR)
Features: Mute, Short-Circuit and Thermal Protection
Package / Case: 20-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class D, Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: U-QFN4040-20
Part Status: Active
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.51 EUR
6000+0.5 EUR
9000+0.49 EUR
21000+0.48 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PAM8019KGR PAM8019.pdf
PAM8019KGR
Hersteller: Diodes Incorporated
Description: IC AMP D/AB STER 3W U-QFN4040-20
Packaging: Cut Tape (CT)
Features: Mute, Short-Circuit and Thermal Protection
Package / Case: 20-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class D, Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: U-QFN4040-20
Part Status: Active
auf Bestellung 131659 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
16+1.13 EUR
23+0.8 EUR
25+0.72 EUR
100+0.63 EUR
250+0.58 EUR
500+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16HTW-13 BAS16HTW.pdf
BAS16HTW-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 100V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.088 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS28-7 BAS28.pdf
BAS28-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 215MA SOT-143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR401UW6-7 BCR401UW6.pdf
BCR401UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.18 EUR
6000+0.17 EUR
21000+0.16 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR402UW6-7 BCR402UW6.pdf
BCR402UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.18 EUR
6000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR405UW6-7 BCR405UW6.pdf
BCR405UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Internal Switch(s): No
Current - Output / Channel: 50mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
auf Bestellung 720000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.22 EUR
6000+0.2 EUR
15000+0.19 EUR
30000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DM1231-02SO-7
DM1231-02SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC SOT26
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-26
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
21000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMC3730UFL3-7 DMC3730UFL3.pdf
DMC3730UFL3-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6DFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.16 EUR
6000+0.15 EUR
9000+0.13 EUR
30000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2301LK-7 DMG2301LK.pdf
DMG2301LK-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.4A SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
30000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMHC6070LSD-13 DMHC6070LSD.pdf
DMHC6070LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.71 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-7 DMN10H700S.pdf
DMN10H700S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
6000+0.12 EUR
15000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN1150UFL3-7 DMN1150UFL3.pdf
DMN1150UFL3-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 2A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 12V
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2008LFU-7 DMN2008LFU.pdf
DMN2008LFU-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.4 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP6350S-7 DMP6350S.pdf
DMP6350S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.25 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFG-7 DMT3006LFG.pdf
DMT3006LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.52 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LPS-13 DMT3006LPS.pdf
DMT3006LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 67500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.37 EUR
5000+0.34 EUR
7500+0.32 EUR
12500+0.31 EUR
17500+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-7 DMT3020LFDB.pdf
DMT3020LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDF-7 DMT3020LFDF.pdf
DMT3020LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT4004LPS-13 DMT4004LPS.pdf
DMT4004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 26A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 355000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.68 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LPS-13 DMT6005LPS.pdf
DMT6005LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LSS-13 DMT6005LSS.pdf
DMT6005LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.01 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6009LCT DMT6009LCT.pdf
DMT6009LCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 37.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 2033 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.29 EUR
50+1.08 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
2000+0.63 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6009LPS-13 DMT6009LPS.pdf
DMT6009LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHA 60V 10.6A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6015LSS-13 DMT6015LSS.pdf
DMT6015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 192500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.46 EUR
5000+0.43 EUR
7500+0.41 EUR
12500+0.39 EUR
17500+0.38 EUR
25000+0.36 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6017LSS-13 DMT6017LSS.pdf
DMT6017LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6009LPS-13 DMTH6009LPS.pdf
DMTH6009LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 320000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.51 EUR
5000+0.47 EUR
7500+0.45 EUR
12500+0.44 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LPD-13 DMTH6010LPD.pdf
DMTH6010LPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 13.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.73 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT3U60SAF-13 SBRT3U60SAF.pdf
SBRT3U60SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMAF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.19 EUR
20000+0.18 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SBRT40V100CTE SBRT40V100CT.pdf
SBRT40V100CTE
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 20A TO262
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-262
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.82 EUR
50+2.26 EUR
100+1.86 EUR
500+1.57 EUR
1000+1.33 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16HTW-13 BAS16HTW.pdf
BAS16HTW-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 100V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 10206 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.097 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS28-7 BAS28.pdf
BAS28-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 215MA SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR401UW6-7 BCR401UW6.pdf
BCR401UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
60+0.3 EUR
68+0.26 EUR
100+0.22 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR402UW6-7 BCR402UW6.pdf
BCR402UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11620 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
60+0.3 EUR
67+0.26 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR405UW6-7 BCR405UW6.pdf
BCR405UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): No
Current - Output / Channel: 50mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 723335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
29+0.62 EUR
32+0.56 EUR
100+0.42 EUR
250+0.38 EUR
500+0.32 EUR
1000+0.24 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DM1231-02SO-7
DM1231-02SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC SOT26
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-26
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 108639 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
49+0.36 EUR
100+0.25 EUR
500+0.19 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMC3730UFL3-7 DMC3730UFL3.pdf
DMC3730UFL3-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6DFN
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 35669 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMG2301LK-7 DMG2301LK.pdf
DMG2301LK-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.4A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 32906 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.7 EUR
41+0.43 EUR
100+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMHC6070LSD-13 DMHC6070LSD.pdf
DMHC6070LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6573 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.78 EUR
10+1.77 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-7 DMN10H700S.pdf
DMN10H700S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 31696 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.74 EUR
32+0.55 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN1150UFL3-7 DMN1150UFL3.pdf
DMN1150UFL3-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN2008LFU-7 DMN2008LFU.pdf
DMN2008LFU-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 3590 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.64 EUR
18+1.02 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP6350S-7 DMP6350S.pdf
DMP6350S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 8435 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1.02 EUR
29+0.62 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LFG-7 DMT3006LFG.pdf
DMT3006LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3006LPS-13 DMT3006LPS.pdf
DMT3006LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 69958 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDB-7 DMT3020LFDB.pdf
DMT3020LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.69 EUR
17+1.06 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.48 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT3020LFDF-7 DMT3020LFDF.pdf
DMT3020LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT4004LPS-13 DMT4004LPS.pdf
DMT4004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 26A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 356008 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.15 EUR
13+1.44 EUR
100+1.01 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LPS-13 DMT6005LPS.pdf
DMT6005LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.68 EUR
11+1.7 EUR
100+1.14 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 122 244 333 334 335 336 337 338 339 340 341 342 343 366 488 610 732 854 976 1098 1220 1221  [ Nächste Seite >> ]