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PI3WVR13412ZHEX PI3WVR13412ZHEX Diodes Incorporated PI3WVR13412-Product-Brief.pdf Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13612ZLEX PI3WVR13612ZLEX Diodes Incorporated PI3WVR13612-Product-Brief.pdf Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13412ZHEX PI3WVR13412ZHEX Diodes Incorporated PI3WVR13412-Product-Brief.pdf Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13612ZLEX PI3WVR13612ZLEX Diodes Incorporated PI3WVR13612-Product-Brief.pdf Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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ADTC114YUAQ-7 ADTC114YUAQ-7 Diodes Incorporated ADTC114YUAQ.pdf Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BCR421UFDQ-7 BCR421UFDQ-7 Diodes Incorporated BCR420UFDQ-BCR421UFDQ.pdf Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMP1009UFDF-7 DMP1009UFDF-7 Diodes Incorporated DMP1009UFDF.pdf Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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DMP3013SFV-7 DMP3013SFV-7 Diodes Incorporated DMP3013SFV.pdf Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Produkt ist nicht verfügbar
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DMP34M4SPS-13 DMP34M4SPS-13 Diodes Incorporated DMP34M4SPS.pdf Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
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DMP4065SQ-7 DMP4065SQ-7 Diodes Incorporated DMP4065SQ.pdf Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 720mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
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DPD13AWF-7 DPD13AWF-7 Diodes Incorporated Description: TVS DIODES 13VWM 21.5VC SOD123F
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HDS10M-13 HDS10M-13 Diodes Incorporated HDS10M.pdf Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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PI3DPX1202A2ZBEX PI3DPX1202A2ZBEX Diodes Incorporated PI3DPX1202A.pdf Description: DISPLAY SWITCH V-QFN7070-48 T&R
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PI3PCIE3412AZHEX PI3PCIE3412AZHEX Diodes Incorporated PI3PCIE3412A.pdf Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3PCIE3412AZLEX PI3PCIE3412AZLEX Diodes Incorporated PI3PCIE3412A.pdf Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Multiplexer/Demultiplexer Circuit: 2:1
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 40-TQFN (3x6)
-3db Bandwidth: 8.2GHz
On-State Resistance (Max): 5Ohm (Typ)
Applications: PCI Express®
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-WFQFN Exposed Pad
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Number of Channels: 4
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PI4IOE5V6408ZTAEX PI4IOE5V6408ZTAEX Diodes Incorporated PI4IOE5V6408.pdf Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
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PI4IOE5V9535ZDEX PI4IOE5V9535ZDEX Diodes Incorporated PI4IOE5V9535.pdf Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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PI6CG15401ZHIEX PI6CG15401ZHIEX Diodes Incorporated PI6CG15401.pdf Description: IC CLOCK GENERATOR 32TQFN
Produkt ist nicht verfügbar
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PI7C9X752FAEX PI7C9X752FAEX Diodes Incorporated PI7C9X752.pdf Description: IC BRIDGE DUAL UART 48TQFP
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PI7C9X794FCEX PI7C9X794FCEX Diodes Incorporated PI7C9X794.pdf Description: IC BRIDGE QUAD UART 64LQFP
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PT7C433833AZEEX PT7C433833AZEEX Diodes Incorporated PT7C433833A.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
DigiKey Programmable: Not Verified
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
Voltage - Supply, Battery: 1.5V ~ 3.7V
Supplier Device Package: 8-TDFN (2x3)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS (12/24 hr)
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Memory Size: 56B
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Features: Leap Year, NVSRAM, Square Wave Output
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDT30B100D1-13 SDT30B100D1-13 Diodes Incorporated SDT30B100D1.pdf Description: DIODE SCHOTTKY 100V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
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DPD13AWF-7 DPD13AWF-7 Diodes Incorporated Description: TVS DIODES 13VWM 21.5VC SOD123F
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ZXMN6A08GQTC ZXMN6A08GQTC Diodes Incorporated ZXMN6A08GQ.pdf Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3DPX1205AZLBEX PI3DPX1205AZLBEX Diodes Incorporated PI3DPX1205A.pdf Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Signal Conditioning: Input Equalization
Supplier Device Package: 40-TQFN (4x6)
Data Rate (Max): 10Gbps
Applications: DisplayPort
Voltage - Supply: 3.3V
Input: DisplayPort
Type: Buffer, ReDriver
Output: DisplayPort
Mounting Type: Surface Mount
Number of Channels: 6
Package / Case: 40-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PI3HDX231ZLEX PI3HDX231ZLEX Diodes Incorporated PI3HDX231.pdf Description: IC INTERFACE SPECIALIZED 72TQFN
Part Status: Active
Supplier Device Package: 72-TQFN (11x5)
Applications: HDMI Redriver, Level Shifter
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 72-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 93980 Stücke:
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10+6.13 EUR
25+5.8 EUR
100+5.02 EUR
250+4.76 EUR
500+4.27 EUR
1000+3.61 EUR
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ZXTP56020FDBQ-7 ZXTP56020FDBQ-7 Diodes Incorporated ZXTP56020FDBQ.pdf Description: TRANS 2PNP 20V 2A U-DFN2020-6
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: U-DFN2020-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 2A
Power - Max: 405mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
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3000+0.39 EUR
6000+0.36 EUR
9000+0.35 EUR
15000+0.32 EUR
21000+0.31 EUR
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ZXTP56020FDBQ-7 ZXTP56020FDBQ-7 Diodes Incorporated ZXTP56020FDBQ.pdf Description: TRANS 2PNP 20V 2A U-DFN2020-6
Qualification: AEC-Q101
Grade: Automotive
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: U-DFN2020-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 2A
Power - Max: 405mW
Operating Temperature: -55°C ~ 150°C (TJ)
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500+0.5 EUR
1000+0.45 EUR
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PI3EQX1004B1ZHEX PI3EQX1004B1ZHEX Diodes Incorporated PI3EQX1004B1-Product-Brief.pdf Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
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PI3EQX1004B1ZHEX PI3EQX1004B1ZHEX Diodes Incorporated PI3EQX1004B1-Product-Brief.pdf Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
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DMN61D9UWQ-13 DMN61D9UWQ-13 Diodes Incorporated DMN61D9UWQ_Rev2-3_Aug2022.pdf Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMP3028LPSQ-13 DMP3028LPSQ-13 Diodes Incorporated DMP3028LPSQ.pdf Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
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DMT36M1LPS-13 DMT36M1LPS-13 Diodes Incorporated DMT36M1LPS.pdf Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
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DMTH6002LPS-13 DMTH6002LPS-13 Diodes Incorporated DMTH6002LPS.pdf Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
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PDS4200HQ-13 PDS4200HQ-13 Diodes Incorporated PDS4200HQ.pdf Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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PI3DPX1203ZHEX PI3DPX1203ZHEX Diodes Incorporated PI3DPX1203-Prod-Brief.pdf Description: IC REDRIVER 8GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
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PI3USB32212ZLEX PI3USB32212ZLEX Diodes Incorporated PI3USB32212.pdf Description: USB3 SWITCH W-QFN3060-32 T&R 3.5
Features: USB 2.0, USB 3.0
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 10.6GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Part Status: Active
Number of Channels: 2
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ZXTR2105FF-7 ZXTR2105FF-7 Diodes Incorporated ZXTR2105FF.pdf Description: IC REG LINEAR 5V 89MA SOT23F
Current - Supply (Max): 6.7 mA
PSRR: 46dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-23F
Number of Regulators: 1
Voltage - Input (Max): 60V
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Output: 89mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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ADC144EUQ-13 ADC144EUQ-13 Diodes Incorporated ADC144EUQ.pdf Description: IC TRANSISTOR SOT363
Part Status: Active
Supplier Device Package: SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 270mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BSS138K-13 BSS138K-13 Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Produkt ist nicht verfügbar
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D15V0H1U2LP-7B D15V0H1U2LP-7B Diodes Incorporated D15V0H1U2LP.pdf Description: TVS DIODE 15VWM 27V X1DFN10062
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 27V
Voltage - Breakdown (Min): 16V
Unidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 70pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
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D55V0M1B2WSQ-7 D55V0M1B2WSQ-7 Diodes Incorporated D55V0M1B2WSQ.pdf Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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DMN10H170SK3Q-13 DMN10H170SK3Q-13 Diodes Incorporated DMN10H170SK3Q.pdf Description: MOSFET N-CH 100V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2058UW-7 DMN2058UW-7 Diodes Incorporated DMN2058UW.pdf Description: MOSFET N-CH 20V 3.5A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
Produkt ist nicht verfügbar
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DMN601DWKQ-7 DMN601DWKQ-7 Diodes Incorporated DMN601DWKQ.pdf Description: MOSFET 2N-CH 60V 0.305A SOT363
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Qualification: AEC-Q101
Grade: Automotive
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DMN62D1LFB-7B DMN62D1LFB-7B Diodes Incorporated DMN62D1LFB.pdf Description: MOSFET N-CH 60V 320MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
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DMP2078LCA3-7 DMP2078LCA3-7 Diodes Incorporated DMP2078LCA3.pdf Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
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DXT2011P5Q-13 DXT2011P5Q-13 Diodes Incorporated DXT2011P5Q.pdf Description: TRANS NPN 100V 6A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SBR0240LPW-7B SBR0240LPW-7B Diodes Incorporated SBR0240LPW.pdf Description: DIODE STD 40V 200MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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ZXTN4240F-7 ZXTN4240F-7 Diodes Incorporated ZXTN4240F.pdf Description: TRANS NPN 40V 2A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 730 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
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ZXTP5240F-7 ZXTP5240F-7 Diodes Incorporated ZXTP5240F.pdf Description: TRANS PNP 40V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Grade: Automotive
Qualification: AEC-Q101
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ADC144EUQ-13 ADC144EUQ-13 Diodes Incorporated ADC144EUQ.pdf Description: IC TRANSISTOR SOT363
Power - Max: 270mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Qualification: AEC-Q101
Grade: Automotive
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BSS138K-13 BSS138K-13 Diodes Incorporated BSS138K.pdf Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 6292 Stücke:
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D15V0H1U2LP-7B D15V0H1U2LP-7B Diodes Incorporated D15V0H1U2LP.pdf Description: TVS DIODE 15VWM 27V X1DFN10062
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 27V
Voltage - Breakdown (Min): 16V
Unidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 70pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
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D55V0M1B2WSQ-7 D55V0M1B2WSQ-7 Diodes Incorporated D55V0M1B2WSQ.pdf Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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DMN10H170SK3Q-13 DMN10H170SK3Q-13 Diodes Incorporated DMN10H170SK3Q.pdf Description: MOSFET N-CH 100V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
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DMN2058UW-7 DMN2058UW-7 Diodes Incorporated DMN2058UW.pdf Description: MOSFET N-CH 20V 3.5A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
Produkt ist nicht verfügbar
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DMN601DWKQ-7 DMN601DWKQ-7 Diodes Incorporated DMN601DWKQ.pdf Description: MOSFET 2N-CH 60V 0.305A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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DMN62D1LFB-7B DMN62D1LFB-7B Diodes Incorporated DMN62D1LFB.pdf Description: MOSFET N-CH 60V 320MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
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DMP2078LCA3-7 DMP2078LCA3-7 Diodes Incorporated DMP2078LCA3.pdf Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
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PI3WVR13412ZHEX PI3WVR13412-Product-Brief.pdf
PI3WVR13412ZHEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13612ZLEX PI3WVR13612-Product-Brief.pdf
PI3WVR13612ZLEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13412ZHEX PI3WVR13412-Product-Brief.pdf
PI3WVR13412ZHEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13612ZLEX PI3WVR13612-Product-Brief.pdf
PI3WVR13612ZLEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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ADTC114YUAQ-7 ADTC114YUAQ.pdf
ADTC114YUAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BCR421UFDQ-7 BCR420UFDQ-BCR421UFDQ.pdf
BCR421UFDQ-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMP1009UFDF-7 DMP1009UFDF.pdf
DMP1009UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
auf Bestellung 2398 Stücke:
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16+1.32 EUR
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DMP3013SFV-7 DMP3013SFV.pdf
DMP3013SFV-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Produkt ist nicht verfügbar
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DMP34M4SPS-13 DMP34M4SPS.pdf
DMP34M4SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
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DMP4065SQ-7 DMP4065SQ.pdf
DMP4065SQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 720mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
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DPD13AWF-7
DPD13AWF-7
Hersteller: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
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HDS10M-13 HDS10M.pdf
HDS10M-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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PI3DPX1202A2ZBEX PI3DPX1202A.pdf
PI3DPX1202A2ZBEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN7070-48 T&R
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PI3PCIE3412AZHEX PI3PCIE3412A.pdf
PI3PCIE3412AZHEX
Hersteller: Diodes Incorporated
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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5+4.38 EUR
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PI3PCIE3412AZLEX PI3PCIE3412A.pdf
PI3PCIE3412AZLEX
Hersteller: Diodes Incorporated
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Multiplexer/Demultiplexer Circuit: 2:1
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 40-TQFN (3x6)
-3db Bandwidth: 8.2GHz
On-State Resistance (Max): 5Ohm (Typ)
Applications: PCI Express®
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-WFQFN Exposed Pad
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Number of Channels: 4
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PI4IOE5V6408ZTAEX PI4IOE5V6408.pdf
PI4IOE5V6408ZTAEX
Hersteller: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
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PI4IOE5V9535ZDEX PI4IOE5V9535.pdf
PI4IOE5V9535ZDEX
Hersteller: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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PI6CG15401ZHIEX PI6CG15401.pdf
PI6CG15401ZHIEX
Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 32TQFN
Produkt ist nicht verfügbar
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PI7C9X752FAEX PI7C9X752.pdf
PI7C9X752FAEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE DUAL UART 48TQFP
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PI7C9X794FCEX PI7C9X794.pdf
PI7C9X794FCEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE QUAD UART 64LQFP
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PT7C433833AZEEX PT7C433833A.pdf
PT7C433833AZEEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
DigiKey Programmable: Not Verified
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
Voltage - Supply, Battery: 1.5V ~ 3.7V
Supplier Device Package: 8-TDFN (2x3)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS (12/24 hr)
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Memory Size: 56B
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Features: Leap Year, NVSRAM, Square Wave Output
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDT30B100D1-13 SDT30B100D1.pdf
SDT30B100D1-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
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DPD13AWF-7
DPD13AWF-7
Hersteller: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
auf Bestellung 3000 Stücke:
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ZXMN6A08GQTC ZXMN6A08GQ.pdf
ZXMN6A08GQTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3DPX1205AZLBEX PI3DPX1205A.pdf
PI3DPX1205AZLBEX
Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Signal Conditioning: Input Equalization
Supplier Device Package: 40-TQFN (4x6)
Data Rate (Max): 10Gbps
Applications: DisplayPort
Voltage - Supply: 3.3V
Input: DisplayPort
Type: Buffer, ReDriver
Output: DisplayPort
Mounting Type: Surface Mount
Number of Channels: 6
Package / Case: 40-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PI3HDX231ZLEX PI3HDX231.pdf
PI3HDX231ZLEX
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 72TQFN
Part Status: Active
Supplier Device Package: 72-TQFN (11x5)
Applications: HDMI Redriver, Level Shifter
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 72-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
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4+6.83 EUR
10+6.13 EUR
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500+4.27 EUR
1000+3.61 EUR
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ZXTP56020FDBQ-7 ZXTP56020FDBQ.pdf
ZXTP56020FDBQ-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: U-DFN2020-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 2A
Power - Max: 405mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
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3000+0.39 EUR
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ZXTP56020FDBQ-7 ZXTP56020FDBQ.pdf
ZXTP56020FDBQ-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Qualification: AEC-Q101
Grade: Automotive
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: U-DFN2020-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 2A
Power - Max: 405mW
Operating Temperature: -55°C ~ 150°C (TJ)
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13+1.62 EUR
21+1 EUR
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500+0.5 EUR
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PI3EQX1004B1ZHEX PI3EQX1004B1-Product-Brief.pdf
PI3EQX1004B1ZHEX
Hersteller: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
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3500+2.7 EUR
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PI3EQX1004B1ZHEX PI3EQX1004B1-Product-Brief.pdf
PI3EQX1004B1ZHEX
Hersteller: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
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DMN61D9UWQ-13 DMN61D9UWQ_Rev2-3_Aug2022.pdf
DMN61D9UWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9690 Stücke:
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33+0.65 EUR
53+0.39 EUR
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5000+0.13 EUR
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DMP3028LPSQ-13 DMP3028LPSQ.pdf
DMP3028LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
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9+2.57 EUR
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DMT36M1LPS-13 DMT36M1LPS.pdf
DMT36M1LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
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14+1.59 EUR
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DMTH6002LPS-13 DMTH6002LPS.pdf
DMTH6002LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
auf Bestellung 3847 Stücke:
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PDS4200HQ-13 PDS4200HQ.pdf
PDS4200HQ-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1011 Stücke:
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8+2.64 EUR
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PI3DPX1203ZHEX PI3DPX1203-Prod-Brief.pdf
PI3DPX1203ZHEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER 8GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
auf Bestellung 128 Stücke:
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5+4.96 EUR
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PI3USB32212ZLEX PI3USB32212.pdf
PI3USB32212ZLEX
Hersteller: Diodes Incorporated
Description: USB3 SWITCH W-QFN3060-32 T&R 3.5
Features: USB 2.0, USB 3.0
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 10.6GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Part Status: Active
Number of Channels: 2
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5+4.3 EUR
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ZXTR2105FF-7 ZXTR2105FF.pdf
ZXTR2105FF-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 89MA SOT23F
Current - Supply (Max): 6.7 mA
PSRR: 46dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-23F
Number of Regulators: 1
Voltage - Input (Max): 60V
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Output: 89mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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42+0.5 EUR
63+0.33 EUR
70+0.3 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
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ADC144EUQ-13 ADC144EUQ.pdf
ADC144EUQ-13
Hersteller: Diodes Incorporated
Description: IC TRANSISTOR SOT363
Part Status: Active
Supplier Device Package: SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 270mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 90000 Stücke:
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10000+0.1 EUR
20000+0.092 EUR
30000+0.087 EUR
50000+0.082 EUR
70000+0.079 EUR
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BSS138K-13 BSS138K.pdf
BSS138K-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Produkt ist nicht verfügbar
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D15V0H1U2LP-7B D15V0H1U2LP.pdf
D15V0H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 27V X1DFN10062
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 27V
Voltage - Breakdown (Min): 16V
Unidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 70pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
auf Bestellung 750000 Stücke:
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10000+0.1 EUR
20000+0.096 EUR
30000+0.094 EUR
50000+0.084 EUR
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D55V0M1B2WSQ-7 D55V0M1B2WSQ.pdf
D55V0M1B2WSQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 123000 Stücke:
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AnzahlPrivatkunde
3000+0.27 EUR
9000+0.24 EUR
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DMN10H170SK3Q-13 DMN10H170SK3Q.pdf
DMN10H170SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2058UW-7 DMN2058UW.pdf
DMN2058UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.5A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
Produkt ist nicht verfügbar
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DMN601DWKQ-7 DMN601DWKQ.pdf
DMN601DWKQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 18000 Stücke:
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AnzahlPrivatkunde
3000+0.13 EUR
6000+0.11 EUR
9000+0.11 EUR
15000+0.1 EUR
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DMN62D1LFB-7B DMN62D1LFB.pdf
DMN62D1LFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
auf Bestellung 20000 Stücke:
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10000+0.13 EUR
20000+0.12 EUR
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DMP2078LCA3-7 DMP2078LCA3.pdf
DMP2078LCA3-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
auf Bestellung 70000 Stücke:
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10000+0.17 EUR
20000+0.15 EUR
50000+0.14 EUR
70000+0.13 EUR
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DXT2011P5Q-13 DXT2011P5Q.pdf
DXT2011P5Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Power - Max: 3.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: PowerDI™ 5
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.5 EUR
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SBR0240LPW-7B SBR0240LPW.pdf
SBR0240LPW-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 40V 200MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
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10000+0.09 EUR
30000+0.077 EUR
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ZXTN4240F-7 ZXTN4240F.pdf
ZXTN4240F-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 2A SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 730 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
auf Bestellung 69000 Stücke:
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3000+0.13 EUR
6000+0.12 EUR
9000+0.12 EUR
15000+0.11 EUR
21000+0.1 EUR
30000+0.1 EUR
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ZXTP5240F-7 ZXTP5240F.pdf
ZXTP5240F-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 730 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
6000+0.17 EUR
9000+0.15 EUR
15000+0.14 EUR
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ADC144EUQ-13 ADC144EUQ.pdf
ADC144EUQ-13
Hersteller: Diodes Incorporated
Description: IC TRANSISTOR SOT363
Power - Max: 270mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 93409 Stücke:
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36+0.58 EUR
59+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
5000+0.11 EUR
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BSS138K-13 BSS138K.pdf
BSS138K-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 6292 Stücke:
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40+0.52 EUR
64+0.33 EUR
78+0.27 EUR
90+0.24 EUR
103+0.2 EUR
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D15V0H1U2LP-7B D15V0H1U2LP.pdf
D15V0H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 27V X1DFN10062
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 27V
Voltage - Breakdown (Min): 16V
Unidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 70pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 767530 Stücke:
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48+0.44 EUR
69+0.31 EUR
159+0.13 EUR
500+0.12 EUR
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D55V0M1B2WSQ-7 D55V0M1B2WSQ.pdf
D55V0M1B2WSQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 123009 Stücke:
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18+1.21 EUR
29+0.75 EUR
34+0.62 EUR
50+0.55 EUR
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DMN10H170SK3Q-13 DMN10H170SK3Q.pdf
DMN10H170SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1823 Stücke:
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11+2.03 EUR
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DMN2058UW-7 DMN2058UW.pdf
DMN2058UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.5A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
Produkt ist nicht verfügbar
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DMN601DWKQ-7 DMN601DWKQ.pdf
DMN601DWKQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 19322 Stücke:
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35+0.61 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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DMN62D1LFB-7B DMN62D1LFB.pdf
DMN62D1LFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 320MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
auf Bestellung 27457 Stücke:
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30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
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2000+0.17 EUR
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DMP2078LCA3-7 DMP2078LCA3.pdf
DMP2078LCA3-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): -12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V
auf Bestellung 77666 Stücke:
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AnzahlPrivatkunde
23+0.92 EUR
38+0.56 EUR
100+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
2000+0.21 EUR
5000+0.19 EUR
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