Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (78495) > Seite 403 nach 1309
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SMCJ28AQ-13-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SNF550018 | Diodes Incorporated | Description: CLOCK SAW OSCILLATOR SEAM7050 T& |
Produkt ist nicht verfügbar |
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SRX7302(T) | Diodes Incorporated |
Description: CRYSTAL CERAMIC GLASS5032 T&R 1K Packaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
Produkt ist nicht verfügbar |
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SXF620006 | Diodes Incorporated | Description: CLOCK SAW OSCILLATOR SEAM7050 T& |
Produkt ist nicht verfügbar |
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US2500002Z | Diodes Incorporated |
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US2600008Z | Diodes Incorporated |
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US3840004 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.016" (0.40mm) Part Status: Active ESR (Equivalent Series Resistance): 80 Ohms Frequency: 38.4 MHz |
Produkt ist nicht verfügbar |
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US3840005 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 10pF Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -30°C ~ 85°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Height - Seated (Max): 0.016" (0.40mm) Part Status: Active ESR (Equivalent Series Resistance): 60 Ohms Frequency: 38.4 MHz |
Produkt ist nicht verfügbar |
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UX31200001 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Type: XO (Standard) Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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UX31400003 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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UX31B42001 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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UX31B42002 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Type: XO (Standard) Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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UX31B42004 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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UX31C50001 | Diodes Incorporated |
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UX31C50002 | Diodes Incorporated |
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UX31C50003 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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UX31C50004 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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UX31F62001 | Diodes Incorporated |
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auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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UX31F62002 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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UX72F55001 | Diodes Incorporated |
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UX72F62022 | Diodes Incorporated |
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UX72F62035 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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UX72G11001 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: LVPECL Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 161.132812 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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UX73F55001 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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WC215CF0019.200000 | Diodes Incorporated | Description: VOLTAGE CONTROL XO SEAM2520 T&R |
Produkt ist nicht verfügbar |
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WF91250002 | Diodes Incorporated | Description: CLOCK SAW OSCILLATOR FR4-14090 T |
Produkt ist nicht verfügbar |
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WL21156001 | Diodes Incorporated | Description: CLOCK SAW OSCILLATOR SEAM2520 T& |
Produkt ist nicht verfügbar |
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WL3124501Q | Diodes Incorporated |
Description: CLOCK SAW OSCILLATOR SEAM3225 T& Packaging: Tape & Reel (TR) Type: XO (Standard) Part Status: Obsolete Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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WL3140002P | Diodes Incorporated | Description: CLOCK SAW OSCILLATOR SEAM3225 T& |
Produkt ist nicht verfügbar |
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WL51400001 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V Frequency: 40 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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WT2516340Q | Diodes Incorporated | Description: TEMP COMP XO SEAM2520 T&R 3K |
Produkt ist nicht verfügbar |
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WT2538404P | Diodes Incorporated | Description: TEMP COMP XO SEAM2520 T&R 3K |
Produkt ist nicht verfügbar |
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WT2538405P | Diodes Incorporated | Description: TEMP COMP XO SEAM2520 T&R 3K |
Produkt ist nicht verfügbar |
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WT2538801P | Diodes Incorporated | Description: TEMP COMP XO SEAM2520 T&R 3K |
Produkt ist nicht verfügbar |
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WT3124502Z | Diodes Incorporated |
Description: XTAL OSC XO 24.5760MHZ CMOS Packaging: Tape & Reel (TR) Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -30°C ~ 75°C Voltage - Supply: 3.3V Part Status: Obsolete Frequency: 24.576 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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WT31360001 | Diodes Incorporated | Description: TEMP COMP XO SEAM3225 T&R 3K |
Produkt ist nicht verfügbar |
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WT3138401P | Diodes Incorporated | Description: TEMP COMP XO SEAM3225 T&R 3K |
Produkt ist nicht verfügbar |
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WT3252I0032.000000 | Diodes Incorporated |
Description: XTAL OSC TCXO 32.0000MHZ SNWV Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Type: TCXO Operating Temperature: -30°C ~ 85°C Frequency Stability: ±2ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 2mA Height - Seated (Max): 0.047" (1.20mm) Frequency: 32 MHz Base Resonator: Crystal Supplier Device Package: 4-VDFN (3.2x2.5) |
Produkt ist nicht verfügbar |
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WT3532014A | Diodes Incorporated | Description: TEMP COMP XO SEAM3225 T&R 3K |
Produkt ist nicht verfügbar |
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WX5021B0212.500000 | Diodes Incorporated |
Description: XTAL OSC TCXO 212.5000MHZ LVPECL Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: TCXO Operating Temperature: -20°C ~ 70°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Current - Supply (Max): 90mA Height - Seated (Max): 0.051" (1.30mm) Frequency: 212.5 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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WX7012C0125.000000 | Diodes Incorporated |
Description: XTAL OSC XO 125.0000MHZ CMOS SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.5V Current - Supply (Max): 70mA Height - Seated (Max): 0.061" (1.55mm) Part Status: Obsolete Frequency: 125 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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WX71A80003 | Diodes Incorporated | Description: CLOCK SAW OSCILLATOR SEAM7050 T& |
Produkt ist nicht verfügbar |
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ZTX658QSTZ | Diodes Incorporated |
Description: TRANS NPN 400V 0.5A E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Frequency - Transition: 50MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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ZXTP56060FDBQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 510mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V Supplier Device Package: U-DFN2020-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC2025UFDB-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
Produkt ist nicht verfügbar |
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DMN1014UFDF-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1014UFDF-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V |
auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2012UCA6-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 |
Produkt ist nicht verfügbar |
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DMN2025UFDB-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
Produkt ist nicht verfügbar |
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DMN2025UFDB-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025UFDF-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2040UVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6017SFV-7 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMN6040SK3Q-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1022UWS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN3020-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V |
Produkt ist nicht verfügbar |
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DMP1022UWS-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN3020-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V |
Produkt ist nicht verfügbar |
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DMP2043UCA3-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V X2-DSN1010- |
auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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DMP2075UVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2075UVT-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V TSOT26 T&R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DMP2110UVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
SMCJ28AQ-13-F |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 28VWM 45.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.43 EUR |
SNF550018 |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SRX7302(T) |
Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC GLASS5032 T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL CERAMIC GLASS5032 T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SXF620006 |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
US2500002Z |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 20PF SMD
Description: CRYSTAL 25.0000MHZ 20PF SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
US2600008Z |
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Hersteller: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM1612 T&R 3K
Description: CRYSTAL CERAMIC SEAM1612 T&R 3K
Produkt ist nicht verfügbar
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US3840004 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 38.4000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 38.4 MHz
Description: CRYSTAL 38.4000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
ESR (Equivalent Series Resistance): 80 Ohms
Frequency: 38.4 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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US3840005 |
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Hersteller: Diodes Incorporated
Description: CRYSTAL 38.4000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
Description: CRYSTAL 38.4000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 38.4 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31200001 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31400003 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 40.0000MHZ CMOS
Description: XTAL OSC XO 40.0000MHZ CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31B42001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Base Resonator: Crystal
Description: XTAL OSC XO CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31B42002 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31B42004 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Base Resonator: Crystal
Description: XTAL OSC XO CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31C50001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ CMOS
Description: XTAL OSC XO 125.0000MHZ CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31C50002 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31C50003 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31C50004 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX31F62001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 156.2500MHZ CMOS
Description: XTAL OSC XO 156.2500MHZ CMOS
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
UX31F62002 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 156.253906MHZ CMOS
Description: XTAL OSC XO 156.253906MHZ CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX72F55001 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX72F62022 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX72F62035 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX72G11001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 161.132812MHZ LVPECL
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: LVPECL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 161.132812 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 161.132812MHZ LVPECL
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: LVPECL
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 161.132812 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UX73F55001 |
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Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WC215CF0019.200000 |
Hersteller: Diodes Incorporated
Description: VOLTAGE CONTROL XO SEAM2520 T&R
Description: VOLTAGE CONTROL XO SEAM2520 T&R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WF91250002 |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR FR4-14090 T
Description: CLOCK SAW OSCILLATOR FR4-14090 T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WL21156001 |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM2520 T&
Description: CLOCK SAW OSCILLATOR SEAM2520 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WL3124501Q |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Part Status: Obsolete
Base Resonator: Crystal
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Part Status: Obsolete
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WL3140002P |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WL51400001 |
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Hersteller: Diodes Incorporated
Description: XTAL OSC XO 40.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V
Frequency: 40 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 40.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V
Frequency: 40 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT2516340Q |
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT2538404P |
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT2538405P |
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT2538801P |
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM2520 T&R 3K
Description: TEMP COMP XO SEAM2520 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT3124502Z |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -30°C ~ 75°C
Voltage - Supply: 3.3V
Part Status: Obsolete
Frequency: 24.576 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 24.5760MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -30°C ~ 75°C
Voltage - Supply: 3.3V
Part Status: Obsolete
Frequency: 24.576 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT31360001 |
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM3225 T&R 3K
Description: TEMP COMP XO SEAM3225 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT3138401P |
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM3225 T&R 3K
Description: TEMP COMP XO SEAM3225 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT3252I0032.000000 |
Hersteller: Diodes Incorporated
Description: XTAL OSC TCXO 32.0000MHZ SNWV
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±2ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 2mA
Height - Seated (Max): 0.047" (1.20mm)
Frequency: 32 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
Description: XTAL OSC TCXO 32.0000MHZ SNWV
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Type: TCXO
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±2ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 2mA
Height - Seated (Max): 0.047" (1.20mm)
Frequency: 32 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WT3532014A |
Hersteller: Diodes Incorporated
Description: TEMP COMP XO SEAM3225 T&R 3K
Description: TEMP COMP XO SEAM3225 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WX5021B0212.500000 |
Hersteller: Diodes Incorporated
Description: XTAL OSC TCXO 212.5000MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 90mA
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 212.5 MHz
Base Resonator: Crystal
Description: XTAL OSC TCXO 212.5000MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: TCXO
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 90mA
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 212.5 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WX7012C0125.000000 |
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 70mA
Height - Seated (Max): 0.061" (1.55mm)
Part Status: Obsolete
Frequency: 125 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.5V
Current - Supply (Max): 70mA
Height - Seated (Max): 0.061" (1.55mm)
Part Status: Obsolete
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WX71A80003 |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZTX658QSTZ |
Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
Description: TRANS NPN 400V 0.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZXTP56060FDBQ-7 |
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Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.23 EUR |
9000+ | 0.22 EUR |
30000+ | 0.21 EUR |
DMC2025UFDB-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET N/P-CH 20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
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DMN1014UFDF-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V
Description: MOSFET N-CH 12V 8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.15 EUR |
20000+ | 0.14 EUR |
30000+ | 0.13 EUR |
DMN1014UFDF-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V
Description: MOSFET N-CH 12V 8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.18 EUR |
6000+ | 0.16 EUR |
9000+ | 0.15 EUR |
15000+ | 0.14 EUR |
30000+ | 0.13 EUR |
DMN2012UCA6-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 24V 13A X3-DSN2718
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN2718-6
Description: MOSFET 2N-CH 24V 13A X3-DSN2718
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN2718-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN2025UFDB-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2N-CH 20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN2025UFDB-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2N-CH 20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.19 EUR |
DMN2025UFDF-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V
Description: MOSFET N-CH 20V 6.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.15 EUR |
DMN2040UVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.7A TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V
Description: MOSFET N-CH 20V 6.7A TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.13 EUR |
DMN6017SFV-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 35A POWERDI3333
Description: MOSFET N-CH 60V 35A POWERDI3333
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMN6040SK3Q-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Description: MOSFET BVDSS: 41V-60V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.52 EUR |
5000+ | 0.49 EUR |
DMP1022UWS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 7.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN3020-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V
Description: MOSFET P-CH 12V 7.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN3020-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP1022UWS-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 7.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN3020-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V
Description: MOSFET P-CH 12V 7.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN3020-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2043UCA3-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V-24V X2-DSN1010-
Description: MOSFET BVDSS: 8V-24V X2-DSN1010-
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
DMP2075UVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.8A TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 10 V
Description: MOSFET P-CH 20V 3.8A TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.13 EUR |
DMP2075UVT-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V-24V TSOT26 T&R
Description: MOSFET BVDSS: 8V-24V TSOT26 T&R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DMP2110UVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2P-CH 20V 1.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.13 EUR |