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PT7M6101CLTA5E Diodes Incorporated Description: IC SUPERVISOR 1 CHANNEL SOT23-5
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PT7M6101NLTA5E PT7M6101NLTA5E Diodes Incorporated Description: IC SUPERVISOR 1 CHANNEL SOT23-5
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PI6C5913004-01ZHIEX PI6C5913004-01ZHIEX Diodes Incorporated Description: CLOCK BUFFER W-QFN3030-16 T&R 3.
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SMAJ58AQ-13-F SMAJ58AQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMAJ58AQ-13-F SMAJ58AQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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MMSTA64-7 MMSTA64-7 Diodes Incorporated ds30159.pdf Description: TRANS PNP DARL 30V 0.5A SC70-3
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DDTA114WCA-7 DDTA114WCA-7 Diodes Incorporated ds30334.pdf Description: TRANS PREBIAS PNP 200MW SOT23-3
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DMTH10H010SPS-13 DMTH10H010SPS-13 Diodes Incorporated DMTH10H010SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H010SPS-13 DMTH10H010SPS-13 Diodes Incorporated DMTH10H010SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H010LCT DMTH10H010LCT Diodes Incorporated DMTH10H010LCT.pdf Description: MOSFET N-CH 100V 108A TO220AB
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DMTH10H025LPS-13 Diodes Incorporated Description: MOSFET BVDSS: 61V-100V POWERDI50
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DMTH10H015LK3-13 DMTH10H015LK3-13 Diodes Incorporated DMTH10H015LK3.pdf Description: MOSFET N-CH 100V 52.5A TO252-4L
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DMTH10H025LPSQ-13 DMTH10H025LPSQ-13 Diodes Incorporated DMTH10H025LPSQ.pdf Description: MOSFET N-CH 100V PWRDI5060
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DMTH10H009LPS-13 DMTH10H009LPS-13 Diodes Incorporated DMTH10H009LPS.pdf Description: MOSFET N-CH 100V PWRDI5060
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DMTH10H009SPS-13 DMTH10H009SPS-13 Diodes Incorporated DMTH10H009SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
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DMTH10H015SPS-13 DMTH10H015SPS-13 Diodes Incorporated DMTH10H015SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
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DMTH10H010LPS-13 DMTH10H010LPS-13 Diodes Incorporated DMTH10H010LPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W, 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
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DMTH10H015SPSQ-13 DMTH10H015SPSQ-13 Diodes Incorporated DMTH10H015SPSQ.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
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DMTH10H010LCTB-13 DMTH10H010LCTB-13 Diodes Incorporated DMTH10H010LCTB.pdf Description: MOSFET N-CH 100V 108A TO220AB
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DMTH10H4M5LPS-13 DMTH10H4M5LPS-13 Diodes Incorporated DMTH10H4M5LPS.pdf Description: MOSFET N-CH 100V PWRDI5060
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DMTH10H010SCT DMTH10H010SCT Diodes Incorporated DMTH10H010SCT.pdf Description: MOSFET N-CH 100V 100A TO220AB
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DMTH10H005LCT DMTH10H005LCT Diodes Incorporated DMTH10H005LCT.pdf Description: MOSFET N-CH 100V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H030LK3-13 DMTH10H030LK3-13 Diodes Incorporated DMTH10H030LK3.pdf Description: MOSFET N-CH 100V 28A TO252-4L
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DMP2160UFDBQ-7 DMP2160UFDBQ-7 Diodes Incorporated DMP2160UFDBQ.pdf Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMP2160UFDBQ-7 DMP2160UFDBQ-7 Diodes Incorporated DMP2160UFDBQ.pdf Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMP2160UFDB-7R Diodes Incorporated Description: MOSFET P-CH SOT23
Packaging: Tape & Reel (TR)
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74AUP2G17FZ4-7 74AUP2G17FZ4-7 Diodes Incorporated 74AUP2G17.pdf Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1410-6
Part Status: Active
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BAS16HLPQ-7B BAS16HLPQ-7B Diodes Incorporated BAS16HLPQ.pdf Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
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BAS16HLPQ-7B BAS16HLPQ-7B Diodes Incorporated BAS16HLPQ.pdf Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
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F95400008 F95400008 Diodes Incorporated FY.pdf Description: CRYSTAL 54.0000MHZ 19PF
Packaging: Tape & Reel (TR)
Load Capacitance: 19pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Part Status: Obsolete
ESR (Equivalent Series Resistance): 15 Ohms
Frequency: 54 MHz
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F95400010 F95400010 Diodes Incorporated FY.pdf Description: CRYSTAL 54.0000MHZ 19PF
Packaging: Tape & Reel (TR)
Load Capacitance: 19pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Part Status: Obsolete
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 54 MHz
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AZ4580P-E1 Diodes Incorporated Description: IC AUDIO 2 CIRCUIT 8DIP
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P6SMAJ75ADF P6SMAJ75ADF Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMAJ75ADF P6SMAJ75ADF Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMAJ75ADF-13 P6SMAJ75ADF-13 Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
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P4SMAJ85ADF-13 P4SMAJ85ADF-13 Diodes Incorporated P4SMAJ50ADF_P4SMAJ85ADF.pdf Description: TVS DIODE 85VWM 137VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
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P6SMAJ85ADF P6SMAJ85ADF Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 85V 137V DFLAT
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P6SMAJ85ADF P6SMAJ85ADF Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 85V 137V DFLAT
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P6SMAJ85ADF-13 P6SMAJ85ADF-13 Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 85V 137V DFLAT
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P6SMAJ78ADF P6SMAJ78ADF Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 78V 126V DFLAT
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P6SMAJ78ADF P6SMAJ78ADF Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 78V 126V DFLAT
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P6SMAJ78ADF-13 P6SMAJ78ADF-13 Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 78V 126V DFLAT
Produkt ist nicht verfügbar
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ZXPD4000DH-7 Diodes Incorporated ZXPD4000DH.pdf Description: PRINTER HEAD DRIVER V-DFN3030-8
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PT7C433833AWEX PT7C433833AWEX Diodes Incorporated PT7C433833A.pdf Description: IC RTC I2C SER 8SOIC T&R 2.5K
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PT7C433833AWEX PT7C433833AWEX Diodes Incorporated PT7C433833A.pdf Description: IC RTC I2C SER 8SOIC T&R 2.5K
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PT7C433833AUEX PT7C433833AUEX Diodes Incorporated PT7C433833A.pdf Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5K
Packaging: Tape & Reel (TR)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PT7C433833AUEX PT7C433833AUEX Diodes Incorporated PT7C433833A.pdf Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5K
Packaging: Cut Tape (CT)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PT7C4337AWE PT7C4337AWE Diodes Incorporated PT7C4337A-4337AC.pdf Description: IC RTC CLK/CALENDAR I2C
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PT7C4339WEX PT7C4339WEX Diodes Incorporated PT7C4339-4339C.pdf Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-SOIC
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
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PT7C4339WEX PT7C4339WEX Diodes Incorporated PT7C4339-4339C.pdf Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-SOIC
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
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10+1.96 EUR
25+1.86 EUR
100+1.53 EUR
250+1.43 EUR
500+1.26 EUR
1000+0.99 EUR
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PT7C43390AWEX PT7C43390AWEX Diodes Incorporated PT7C43390.pdf Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.35V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.6µA ~ 0.7µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PT7C4337BWEX PT7C4337BWEX Diodes Incorporated Description: IC REAL TIME CLOCK SO-8 T&R 2.5K
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PT7C4337BUEX PT7C4337BUEX Diodes Incorporated Description: IC REAL TIME CLK MSOP-8 T&R 2.5K
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PT7C4337BZEEX PT7C4337BZEEX Diodes Incorporated Description: IC REAL TIME CLK W-DFN2030-8 T&R
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PT7C4337AWEX PT7C4337AWEX Diodes Incorporated PT7C4337A-4337AC.pdf Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.8µA @ 1.3V ~ 1.8V
DigiKey Programmable: Not Verified
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2500+0.92 EUR
5000+0.88 EUR
12500+0.84 EUR
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PT7C4339UEX PT7C4339UEX Diodes Incorporated PT7C4339-4339C.pdf Description: IC RTC CLK/CALENDAR I2C 8MSOP
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PT7C4337BLEX PT7C4337BLEX Diodes Incorporated Description: IC REAL TIME CLK TSSOP T&R 2.5K
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PT7C4337ACSEX Diodes Incorporated PT7C4337A-4337AC.pdf Description: IC RTC CAL I2C/2-WIRE SER 16SOIC
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PT7C4337ACSE PT7C4337ACSE Diodes Incorporated PT7C4337A-4337AC.pdf Description: IC RTC CLK/CALENDAR I2C 16SOIC
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 16-SOIC
Current - Timekeeping (Max): 0.8µA @ 1.3V ~ 1.8V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AH3232Q-W-7 AH3232Q-W-7 Diodes Incorporated AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf Description: MAG SWITCH UNIPOLAR SC59 T&R 3K
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Switch
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 6mT Trip, 4mT Release
Supplier Device Package: SC-59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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3000+0.48 EUR
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PT7M6101CLTA5E
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Produkt ist nicht verfügbar
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PT7M6101NLTA5E
PT7M6101NLTA5E
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Produkt ist nicht verfügbar
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PI6C5913004-01ZHIEX
PI6C5913004-01ZHIEX
Hersteller: Diodes Incorporated
Description: CLOCK BUFFER W-QFN3030-16 T&R 3.
Produkt ist nicht verfügbar
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SMAJ58AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ58AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMAJ58AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ58AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Anzahl Preis
30+0.6 EUR
43+0.41 EUR
100+0.28 EUR
500+0.22 EUR
1000+0.16 EUR
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MMSTA64-7 ds30159.pdf
MMSTA64-7
Hersteller: Diodes Incorporated
Description: TRANS PNP DARL 30V 0.5A SC70-3
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DDTA114WCA-7 ds30334.pdf
DDTA114WCA-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
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DMTH10H010SPS-13 DMTH10H010SPS.pdf
DMTH10H010SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H010SPS-13 DMTH10H010SPS.pdf
DMTH10H010SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Qualification: AEC-Q101
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Anzahl Preis
6+3.03 EUR
10+1.94 EUR
100+1.3 EUR
500+1.03 EUR
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DMTH10H010LCT DMTH10H010LCT.pdf
DMTH10H010LCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 108A TO220AB
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DMTH10H025LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V POWERDI50
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DMTH10H015LK3-13 DMTH10H015LK3.pdf
DMTH10H015LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 52.5A TO252-4L
Produkt ist nicht verfügbar
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DMTH10H025LPSQ-13 DMTH10H025LPSQ.pdf
DMTH10H025LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Produkt ist nicht verfügbar
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DMTH10H009LPS-13 DMTH10H009LPS.pdf
DMTH10H009LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Produkt ist nicht verfügbar
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DMTH10H009SPS-13 DMTH10H009SPS.pdf
DMTH10H009SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Produkt ist nicht verfügbar
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DMTH10H015SPS-13 DMTH10H015SPS.pdf
DMTH10H015SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
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DMTH10H010LPS-13 DMTH10H010LPS.pdf
DMTH10H010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W, 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
Produkt ist nicht verfügbar
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DMTH10H015SPSQ-13 DMTH10H015SPSQ.pdf
DMTH10H015SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+0.89 EUR
Mindestbestellmenge: 2500
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DMTH10H010LCTB-13 DMTH10H010LCTB.pdf
DMTH10H010LCTB-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 108A TO220AB
Produkt ist nicht verfügbar
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DMTH10H4M5LPS-13 DMTH10H4M5LPS.pdf
DMTH10H4M5LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
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DMTH10H010SCT DMTH10H010SCT.pdf
DMTH10H010SCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 100A TO220AB
Produkt ist nicht verfügbar
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DMTH10H005LCT DMTH10H005LCT.pdf
DMTH10H005LCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 354 Stücke:
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Anzahl Preis
5+4.17 EUR
10+3.46 EUR
100+2.76 EUR
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DMTH10H030LK3-13 DMTH10H030LK3.pdf
DMTH10H030LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 28A TO252-4L
Produkt ist nicht verfügbar
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DMP2160UFDBQ-7 DMP2160UFDBQ.pdf
DMP2160UFDBQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.27 EUR
9000+0.25 EUR
Mindestbestellmenge: 3000
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DMP2160UFDBQ-7 DMP2160UFDBQ.pdf
DMP2160UFDBQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 229406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
25+0.73 EUR
100+0.51 EUR
500+0.4 EUR
1000+0.32 EUR
Mindestbestellmenge: 21
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DMP2160UFDB-7R
Hersteller: Diodes Incorporated
Description: MOSFET P-CH SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74AUP2G17FZ4-7 74AUP2G17.pdf
74AUP2G17FZ4-7
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1410-6
Part Status: Active
Produkt ist nicht verfügbar
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BAS16HLPQ-7B BAS16HLPQ.pdf
BAS16HLPQ-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.073 EUR
20000+0.068 EUR
30000+0.067 EUR
Mindestbestellmenge: 10000
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BAS16HLPQ-7B BAS16HLPQ.pdf
BAS16HLPQ-7B
Hersteller: Diodes Incorporated
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 47925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
77+0.23 EUR
107+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.097 EUR
Mindestbestellmenge: 53
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F95400008 FY.pdf
F95400008
Hersteller: Diodes Incorporated
Description: CRYSTAL 54.0000MHZ 19PF
Packaging: Tape & Reel (TR)
Load Capacitance: 19pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Part Status: Obsolete
ESR (Equivalent Series Resistance): 15 Ohms
Frequency: 54 MHz
Produkt ist nicht verfügbar
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F95400010 FY.pdf
F95400010
Hersteller: Diodes Incorporated
Description: CRYSTAL 54.0000MHZ 19PF
Packaging: Tape & Reel (TR)
Load Capacitance: 19pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Part Status: Obsolete
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 54 MHz
Produkt ist nicht verfügbar
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AZ4580P-E1
Hersteller: Diodes Incorporated
Description: IC AUDIO 2 CIRCUIT 8DIP
Produkt ist nicht verfügbar
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P6SMAJ75ADF P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ75ADF
Hersteller: Diodes Incorporated
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMAJ75ADF P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ75ADF
Hersteller: Diodes Incorporated
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMAJ75ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ75ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ85ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
P4SMAJ85ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 85VWM 137VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.15 EUR
Mindestbestellmenge: 10000
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P6SMAJ85ADF P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ85ADF
Hersteller: Diodes Incorporated
Description: TVS DIODE 85V 137V DFLAT
Produkt ist nicht verfügbar
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P6SMAJ85ADF P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ85ADF
Hersteller: Diodes Incorporated
Description: TVS DIODE 85V 137V DFLAT
Produkt ist nicht verfügbar
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P6SMAJ85ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ85ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 85V 137V DFLAT
Produkt ist nicht verfügbar
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P6SMAJ78ADF P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ78ADF
Hersteller: Diodes Incorporated
Description: TVS DIODE 78V 126V DFLAT
Produkt ist nicht verfügbar
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P6SMAJ78ADF P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ78ADF
Hersteller: Diodes Incorporated
Description: TVS DIODE 78V 126V DFLAT
Produkt ist nicht verfügbar
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P6SMAJ78ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ78ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 78V 126V DFLAT
Produkt ist nicht verfügbar
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ZXPD4000DH-7 ZXPD4000DH.pdf
Hersteller: Diodes Incorporated
Description: PRINTER HEAD DRIVER V-DFN3030-8
Produkt ist nicht verfügbar
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PT7C433833AWEX PT7C433833A.pdf
PT7C433833AWEX
Hersteller: Diodes Incorporated
Description: IC RTC I2C SER 8SOIC T&R 2.5K
Produkt ist nicht verfügbar
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PT7C433833AWEX PT7C433833A.pdf
PT7C433833AWEX
Hersteller: Diodes Incorporated
Description: IC RTC I2C SER 8SOIC T&R 2.5K
Produkt ist nicht verfügbar
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PT7C433833AUEX PT7C433833A.pdf
PT7C433833AUEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5K
Packaging: Tape & Reel (TR)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PT7C433833AUEX PT7C433833A.pdf
PT7C433833AUEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5K
Packaging: Cut Tape (CT)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PT7C4337AWE PT7C4337A-4337AC.pdf
PT7C4337AWE
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
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PT7C4339WEX PT7C4339-4339C.pdf
PT7C4339WEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-SOIC
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
auf Bestellung 15500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.93 EUR
5000+0.88 EUR
12500+0.85 EUR
Mindestbestellmenge: 2500
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PT7C4339WEX PT7C4339-4339C.pdf
PT7C4339WEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-SOIC
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
auf Bestellung 15908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
10+1.96 EUR
25+1.86 EUR
100+1.53 EUR
250+1.43 EUR
500+1.26 EUR
1000+0.99 EUR
Mindestbestellmenge: 8
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PT7C43390AWEX PT7C43390.pdf
PT7C43390AWEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.35V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.6µA ~ 0.7µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PT7C4337BWEX
PT7C4337BWEX
Hersteller: Diodes Incorporated
Description: IC REAL TIME CLOCK SO-8 T&R 2.5K
Produkt ist nicht verfügbar
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PT7C4337BUEX
PT7C4337BUEX
Hersteller: Diodes Incorporated
Description: IC REAL TIME CLK MSOP-8 T&R 2.5K
Produkt ist nicht verfügbar
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PT7C4337BZEEX
PT7C4337BZEEX
Hersteller: Diodes Incorporated
Description: IC REAL TIME CLK W-DFN2030-8 T&R
Produkt ist nicht verfügbar
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PT7C4337AWEX PT7C4337A-4337AC.pdf
PT7C4337AWEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.8µA @ 1.3V ~ 1.8V
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.92 EUR
5000+0.88 EUR
12500+0.84 EUR
Mindestbestellmenge: 2500
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PT7C4339UEX PT7C4339-4339C.pdf
PT7C4339UEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8MSOP
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PT7C4337BLEX
PT7C4337BLEX
Hersteller: Diodes Incorporated
Description: IC REAL TIME CLK TSSOP T&R 2.5K
Produkt ist nicht verfügbar
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PT7C4337ACSEX PT7C4337A-4337AC.pdf
Hersteller: Diodes Incorporated
Description: IC RTC CAL I2C/2-WIRE SER 16SOIC
Produkt ist nicht verfügbar
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PT7C4337ACSE PT7C4337A-4337AC.pdf
PT7C4337ACSE
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 16SOIC
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 16-SOIC
Current - Timekeeping (Max): 0.8µA @ 1.3V ~ 1.8V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AH3232Q-W-7 AH3231Q-AH3234Q_AH3270Q-AH3272Q.pdf
AH3232Q-W-7
Hersteller: Diodes Incorporated
Description: MAG SWITCH UNIPOLAR SC59 T&R 3K
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Switch
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 27V
Technology: Hall Effect
Sensing Range: 6mT Trip, 4mT Release
Supplier Device Package: SC-59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.48 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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