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AP2401ASN-7 AP2401ASN-7 Diodes Incorporated AP24x1A.pdf Description: IC PWR SWITCH P-CHAN 1:1 6UDFN
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STPR1030 STPR1030 Diodes Incorporated STPR1030.pdf Description: DIODE ARRAY GP 300V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO220AB (Type WX)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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STPR1640CTW STPR1640CTW Diodes Incorporated STPR1640CTW.pdf Description: DIODE ARRAY GP 400V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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STPR2030 STPR2030 Diodes Incorporated STPR2030.pdf Description: DIODE ARRAY GP 300V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO220AB (Type WX)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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STPR860D STPR860D Diodes Incorporated STPR820D.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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STPR560D STPR560D Diodes Incorporated STPR560D.pdf Description: DIODE GEN PURP 600V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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STPR1620 STPR1620 Diodes Incorporated STPR1620.pdf Description: DIODE ARRAY GP 200V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO220AB (Type WX)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BSS84V-7-79 BSS84V-7-79 Diodes Incorporated Description: DIODE
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BSS84DWQ-7 BSS84DWQ-7 Diodes Incorporated BSS84DWQ.pdf Description: MOSFET 2P-CH 50V 0.13A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BSS84DWQ-13 BSS84DWQ-13 Diodes Incorporated BSS84DWQ.pdf Description: MOSFET 2P-CH 50V 0.13A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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FMMT491AQTC FMMT491AQTC Diodes Incorporated FMMT491A.pdf Description: SS MID-PERF TRANSISTOR SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q101
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FMMT491AQTA FMMT491AQTA Diodes Incorporated FMMT491A.pdf Description: SS MID-PERF TRANSISTOR SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q101
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PS4157NCEX PS4157NCEX Diodes Incorporated PS4157N.pdf Description: IC SWITCH SPDTX1 4.5OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 4V ~ 12V
Charge Injection: 170pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 220ns, 225ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 20µA
Part Status: Active
Number of Circuits: 1
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PS4157NCEX PS4157NCEX Diodes Incorporated PS4157N.pdf Description: IC SWITCH SPDTX1 4.5OHM SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 4V ~ 12V
Charge Injection: 170pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 220ns, 225ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 20µA
Part Status: Active
Number of Circuits: 1
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DMTH10H2M5STLW-13 DMTH10H2M5STLW-13 Diodes Incorporated DMTH10H2M5STLW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
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SMAJ10AQ-13-F SMAJ10AQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TVS DIODE 10VWM 17VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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G30H150CTFW G30H150CTFW Diodes Incorporated Description: DIODE ARR SCHOTTKY 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Qualification: AEC-Q101
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G30H150CTW G30H150CTW Diodes Incorporated Description: DIODE ARR SCHOT 150V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Qualification: AEC-Q101
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SK33-7 SK33-7 Diodes Incorporated SK32-SK36.pdf Description: DIODE SCHOTTKY 30V 3A SMC
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AP7375-50SA-7 AP7375-50SA-7 Diodes Incorporated AP7375.pdf Description: IC REG LINEAR 5V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP7375-50SA-7 AP7375-50SA-7 Diodes Incorporated AP7375.pdf Description: IC REG LINEAR 5V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
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FK1220017Z FK1220017Z Diodes Incorporated FK1220017Z.pdf Description: XTAL OSC XO 12.2880MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 12.288 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
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FK1220017Z FK1220017Z Diodes Incorporated FK1220017Z.pdf Description: XTAL OSC XO 12.2880MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 12.288 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
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F60800010 F60800010 Diodes Incorporated F6_FX.pdf Description: CRYSTAL 8.0000MHZ 18PF SMD
Frequency: 8 MHz
ESR (Equivalent Series Resistance): 100 Ohms
Height - Seated (Max): 0.053" (1.35mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±30ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Load Capacitance: 18pF
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LSP78L33AATB LSP78L33AATB Diodes Incorporated Description: IC REGULATOR
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.8V @ 100mA
Protection Features: Over Temperature, Short Circuit
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S3MB_HF S3MB_HF Diodes Incorporated S3JB-S3MB_LS.pdf Description: DIODE STANDARD 1000V 3A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
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PI6ULS5V9509WE PI6ULS5V9509WE Diodes Incorporated PI6ULS5V9509.pdf Description: IC REDRIVER I2C 1CH 400KHZ 8SOIC
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D18V0L1B2LPQ-7B D18V0L1B2LPQ-7B Diodes Incorporated D18V0L1B2LPQ.pdf Description: TVS DIODE 20VWM 30V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 68W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D18V0L1B2LPQ-7B D18V0L1B2LPQ-7B Diodes Incorporated D18V0L1B2LPQ.pdf Description: TVS DIODE 20VWM 30V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 68W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC847BTQ-7 BC847BTQ-7 Diodes Incorporated BC847BTQ.pdf Description: TRANS NPN 45V 0.1A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-523
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Qualification: AEC-Q101
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15000+0.056 EUR
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DMP31D7LW-7 DMP31D7LW-7 Diodes Incorporated DMP31D7LW.pdf Description: MOSFET BVDSS: 25V-30V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
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DMP31D7LW-7 DMP31D7LW-7 Diodes Incorporated DMP31D7LW.pdf Description: MOSFET BVDSS: 25V-30V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
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PI3A6386ZLEX PI3A6386ZLEX Diodes Incorporated PI3A6386.pdf Description: ANALOG SWITCH 3V-5V V-QFN3030-24
Features: USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-TQFN (3x3)
Voltage - Supply, Single (V+): 1.7V ~ 5.5V
Voltage - Supply, Dual (V±): ±3V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1, 3:1
Number of Channels: 2
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PI3A6386ZLEX PI3A6386ZLEX Diodes Incorporated PI3A6386.pdf Description: ANALOG SWITCH 3V-5V V-QFN3030-24
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-TQFN (3x3)
Voltage - Supply, Single (V+): 1.7V ~ 5.5V
Voltage - Supply, Dual (V±): ±3V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1, 3:1
Number of Channels: 2
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D5V0H1B2LP-7B D5V0H1B2LP-7B Diodes Incorporated D5V0H1B2LP.pdf Description: TVS DIODE 5.5VWM X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 375W
Power Line Protection: No
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D5V0H1B2LP-7B D5V0H1B2LP-7B Diodes Incorporated D5V0H1B2LP.pdf Description: TVS DIODE 5.5VWM X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 375W
Power Line Protection: No
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ZXT10P20DE6TA ZXT10P20DE6TA Diodes Incorporated ZXT10P20DE6.pdf Description: TRANS PNP 20V 2.5A SOT23-6
Qualification: AEC-Q101
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2.5 A
Grade: Automotive
Supplier Device Package: SOT-26
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 2.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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AH211Z4-BG1 AH211Z4-BG1 Diodes Incorporated AH211.pdf Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 9mT Trip, -9mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 8mA
Supplier Device Package: TO-94
Test Condition: 25°C
Part Status: Active
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ZTX753QSTZ ZTX753QSTZ Diodes Incorporated ZTX752.pdf Description: TRANS PNP 100V 2A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 140MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BZT52C6V8Q-7-F BZT52C6V8Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 6.8V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
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BZT52C6V8-7-G Diodes Incorporated Description: DIODE ZENER
Produkt ist nicht verfügbar
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BZT52C6V8LP-7B-79 Diodes Incorporated Description: DIODE ZENER
Produkt ist nicht verfügbar
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DMP3011SFVW-13 DMP3011SFVW-13 Diodes Incorporated DMP3011SFVW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3011SFVW-13 DMP3011SFVW-13 Diodes Incorporated DMP3011SFVW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
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DMP3011SFVW-7 DMP3011SFVW-7 Diodes Incorporated DMP3011SFVW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMP3011SFVW-7 DMP3011SFVW-7 Diodes Incorporated DMP3011SFVW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
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DMP3011SFVWQ-13 DMP3011SFVWQ-13 Diodes Incorporated DMP3011SFVWQ.pdf Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Qualification: AEC-Q101
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DMP3011SFVWQ-13 DMP3011SFVWQ-13 Diodes Incorporated DMP3011SFVWQ.pdf Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Qualification: AEC-Q101
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500+0.76 EUR
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S1614A-25.0000(T) Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
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S1643B-10.0000(T) Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM3225 T&
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S1634E-125.0000 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM5032 T&
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S1614B-25.0000 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
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S1615B-10.0000(T) Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
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S1615B-32.0000 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
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S1615B-1.8432(T) Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
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S1615B-4.0000(T) Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
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DMN90H8D5HCT DMN90H8D5HCT Diodes Incorporated DMN90H8D5HCT.pdf Description: MOSFET N-CH 900V 2.5A TO220AB
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AP7387-36Y-13 AP7387-36Y-13 Diodes Incorporated AP7387.pdf Description: IC REG LINEAR 3.6V 150MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.6V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
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DMN2990UFO-7B DMN2990UFO-7B Diodes Incorporated DMN2990UFO.pdf Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
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DMN2990UFO-7B DMN2990UFO-7B Diodes Incorporated DMN2990UFO.pdf Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
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AP2401ASN-7 AP24x1A.pdf
AP2401ASN-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 6UDFN
Produkt ist nicht verfügbar
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STPR1030 STPR1030.pdf
STPR1030
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO220AB (Type WX)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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STPR1640CTW STPR1640CTW.pdf
STPR1640CTW
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 400V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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STPR2030 STPR2030.pdf
STPR2030
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 300V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO220AB (Type WX)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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STPR860D STPR820D.pdf
STPR860D
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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STPR560D STPR560D.pdf
STPR560D
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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STPR1620 STPR1620.pdf
STPR1620
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO220AB (Type WX)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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BSS84V-7-79
BSS84V-7-79
Hersteller: Diodes Incorporated
Description: DIODE
Produkt ist nicht verfügbar
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BSS84DWQ-7 BSS84DWQ.pdf
BSS84DWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.13A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+0.2 EUR
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BSS84DWQ-13 BSS84DWQ.pdf
BSS84DWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.13A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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10000+0.18 EUR
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FMMT491AQTC FMMT491A.pdf
FMMT491AQTC
Hersteller: Diodes Incorporated
Description: SS MID-PERF TRANSISTOR SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FMMT491AQTA FMMT491A.pdf
FMMT491AQTA
Hersteller: Diodes Incorporated
Description: SS MID-PERF TRANSISTOR SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q101
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PS4157NCEX PS4157N.pdf
PS4157NCEX
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDTX1 4.5OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 4V ~ 12V
Charge Injection: 170pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 220ns, 225ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 20µA
Part Status: Active
Number of Circuits: 1
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PS4157NCEX PS4157N.pdf
PS4157NCEX
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDTX1 4.5OHM SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 4V ~ 12V
Charge Injection: 170pC
Crosstalk: -42dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 220ns, 225ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 20µA
Part Status: Active
Number of Circuits: 1
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DMTH10H2M5STLW-13 DMTH10H2M5STLW.pdf
DMTH10H2M5STLW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
Produkt ist nicht verfügbar
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SMAJ10AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ10AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 10VWM 17VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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G30H150CTFW
G30H150CTFW
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTTKY 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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G30H150CTW
G30H150CTW
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 150V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SK33-7 SK32-SK36.pdf
SK33-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 3A SMC
Produkt ist nicht verfügbar
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AP7375-50SA-7 AP7375.pdf
AP7375-50SA-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
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AP7375-50SA-7 AP7375.pdf
AP7375-50SA-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.36V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
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FK1220017Z FK1220017Z.pdf
FK1220017Z
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 12.2880MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 12.288 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
Produkt ist nicht verfügbar
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FK1220017Z FK1220017Z.pdf
FK1220017Z
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 12.2880MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Voltage - Supply: 3.3V
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 12.288 MHz
Base Resonator: Crystal
Supplier Device Package: 4-VDFN (3.2x2.5)
Produkt ist nicht verfügbar
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F60800010 F6_FX.pdf
F60800010
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 18PF SMD
Frequency: 8 MHz
ESR (Equivalent Series Resistance): 100 Ohms
Height - Seated (Max): 0.053" (1.35mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±30ppm
Operating Temperature: -40°C ~ 85°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Load Capacitance: 18pF
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LSP78L33AATB
LSP78L33AATB
Hersteller: Diodes Incorporated
Description: IC REGULATOR
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.8V @ 100mA
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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S3MB_HF S3JB-S3MB_LS.pdf
S3MB_HF
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 3A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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PI6ULS5V9509WE PI6ULS5V9509.pdf
PI6ULS5V9509WE
Hersteller: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8SOIC
Produkt ist nicht verfügbar
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D18V0L1B2LPQ-7B D18V0L1B2LPQ.pdf
D18V0L1B2LPQ-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 20VWM 30V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 68W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D18V0L1B2LPQ-7B D18V0L1B2LPQ.pdf
D18V0L1B2LPQ-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 20VWM 30V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 68W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC847BTQ-7 BC847BTQ.pdf
BC847BTQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-523
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 1590000 Stücke:
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AnzahlPrivatkunde
3000+0.073 EUR
6000+0.064 EUR
9000+0.061 EUR
15000+0.056 EUR
21000+0.054 EUR
30000+0.051 EUR
75000+0.045 EUR
150000+0.042 EUR
300000+0.039 EUR
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DMP31D7LW-7 DMP31D7LW.pdf
DMP31D7LW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
auf Bestellung 96000 Stücke:
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AnzahlPrivatkunde
3000+0.11 EUR
6000+0.099 EUR
9000+0.094 EUR
15000+0.088 EUR
21000+0.084 EUR
30000+0.081 EUR
75000+0.076 EUR
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DMP31D7LW-7 DMP31D7LW.pdf
DMP31D7LW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
auf Bestellung 97909 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
76+0.27 EUR
113+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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PI3A6386ZLEX PI3A6386.pdf
PI3A6386ZLEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 3V-5V V-QFN3030-24
Features: USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-TQFN (3x3)
Voltage - Supply, Single (V+): 1.7V ~ 5.5V
Voltage - Supply, Dual (V±): ±3V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1, 3:1
Number of Channels: 2
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3500+1.26 EUR
7000+1.25 EUR
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PI3A6386ZLEX PI3A6386.pdf
PI3A6386ZLEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 3V-5V V-QFN3030-24
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-TQFN (3x3)
Voltage - Supply, Single (V+): 1.7V ~ 5.5V
Voltage - Supply, Dual (V±): ±3V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1, 3:1
Number of Channels: 2
auf Bestellung 360500 Stücke:
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5+4.77 EUR
10+2.99 EUR
25+2.52 EUR
100+2 EUR
250+1.74 EUR
500+1.58 EUR
1000+1.45 EUR
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D5V0H1B2LP-7B D5V0H1B2LP.pdf
D5V0H1B2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 375W
Power Line Protection: No
Produkt ist nicht verfügbar
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D5V0H1B2LP-7B D5V0H1B2LP.pdf
D5V0H1B2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 375W
Power Line Protection: No
auf Bestellung 1949 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
124+0.17 EUR
291+0.073 EUR
500+0.067 EUR
1000+0.061 EUR
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ZXT10P20DE6TA ZXT10P20DE6.pdf
ZXT10P20DE6TA
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 2.5A SOT23-6
Qualification: AEC-Q101
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2.5 A
Grade: Automotive
Supplier Device Package: SOT-26
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 2.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.42 EUR
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AH211Z4-BG1 AH211.pdf
AH211Z4-BG1
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 9mT Trip, -9mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 8mA
Supplier Device Package: TO-94
Test Condition: 25°C
Part Status: Active
auf Bestellung 1967 Stücke:
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11+1.9 EUR
15+1.46 EUR
25+1.26 EUR
50+1.21 EUR
100+1.04 EUR
500+0.9 EUR
1000+0.79 EUR
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ZTX753QSTZ ZTX752.pdf
ZTX753QSTZ
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 2A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 140MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BZT52C6V8Q-7-F ds18004.pdf
BZT52C6V8Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C6V8-7-G
Hersteller: Diodes Incorporated
Description: DIODE ZENER
Produkt ist nicht verfügbar
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BZT52C6V8LP-7B-79
Hersteller: Diodes Incorporated
Description: DIODE ZENER
Produkt ist nicht verfügbar
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DMP3011SFVW-13 DMP3011SFVW.pdf
DMP3011SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3011SFVW-13 DMP3011SFVW.pdf
DMP3011SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
auf Bestellung 977 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
19+1.11 EUR
100+0.86 EUR
500+0.68 EUR
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DMP3011SFVW-7 DMP3011SFVW.pdf
DMP3011SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.51 EUR
4000+0.46 EUR
6000+0.45 EUR
10000+0.43 EUR
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DMP3011SFVW-7 DMP3011SFVW.pdf
DMP3011SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
auf Bestellung 11898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
18+1.23 EUR
100+0.81 EUR
500+0.62 EUR
1000+0.56 EUR
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DMP3011SFVWQ-13 DMP3011SFVWQ.pdf
DMP3011SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.6 EUR
6000+0.56 EUR
9000+0.54 EUR
15000+0.52 EUR
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DMP3011SFVWQ-13 DMP3011SFVWQ.pdf
DMP3011SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 26810 Stücke:
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AnzahlPrivatkunde
9+2.37 EUR
15+1.49 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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S1614A-25.0000(T)
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
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S1643B-10.0000(T)
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225 T&
Produkt ist nicht verfügbar
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S1634E-125.0000
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM5032 T&
Produkt ist nicht verfügbar
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S1614B-25.0000
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
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S1615B-10.0000(T)
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
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S1615B-32.0000
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
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S1615B-1.8432(T)
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
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S1615B-4.0000(T)
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Produkt ist nicht verfügbar
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DMN90H8D5HCT DMN90H8D5HCT.pdf
DMN90H8D5HCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 900V 2.5A TO220AB
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
10+2.4 EUR
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AP7387-36Y-13 AP7387.pdf
AP7387-36Y-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.6V 150MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.6V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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DMN2990UFO-7B DMN2990UFO.pdf
DMN2990UFO-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
auf Bestellung 2990000 Stücke:
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AnzahlPrivatkunde
10000+0.23 EUR
20000+0.2 EUR
50000+0.19 EUR
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DMN2990UFO-7B DMN2990UFO.pdf
DMN2990UFO-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
auf Bestellung 2990880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
30+0.7 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
2000+0.27 EUR
5000+0.24 EUR
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