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BAS40-05-7-F-2477 Diodes Incorporated Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Produkt ist nicht verfügbar
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DMN2004WKQ-7 DMN2004WKQ-7 Diodes Incorporated DMN2004WKQ.pdf Description: MOSFET N-CH 20V 540MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 27660000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
21000+0.12 EUR
30000+0.11 EUR
75000+0.1 EUR
150000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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DMN2004WKQ-7 DMN2004WKQ-7 Diodes Incorporated DMN2004WKQ.pdf Description: MOSFET N-CH 20V 540MA SOT323
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Qualification: AEC-Q101
Grade: Automotive
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47+0.44 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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BAT54CTA-2477 Diodes Incorporated Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI6C557-06LE PI6C557-06LE Diodes Incorporated PI6C557-06.pdf Description: IC CLOCK GENERATOR 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 200MHz
Input: HCSL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 2:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S1GB-13-F S1GB-13-F Diodes Incorporated ds16003.pdf Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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9000+0.11 EUR
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S1GB-13-F S1GB-13-F Diodes Incorporated ds16003.pdf Description: DIODE STANDARD 400V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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56+0.38 EUR
67+0.31 EUR
78+0.27 EUR
100+0.24 EUR
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BZT585B5V6TQ-7 BZT585B5V6TQ-7 Diodes Incorporated BZT585B5V1TQ-BZT585B43TQ.pdf Description: DIODE ZENER 5.6V 350MW SOD523
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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6000+0.076 EUR
9000+0.07 EUR
15000+0.069 EUR
21000+0.064 EUR
30000+0.061 EUR
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BZT585B5V6TQ-7 BZT585B5V6TQ-7 Diodes Incorporated BZT585B5V1TQ-BZT585B43TQ.pdf Description: DIODE ZENER 5.6V 350MW SOD523
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 427508 Stücke:
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63+0.33 EUR
89+0.24 EUR
173+0.12 EUR
500+0.12 EUR
1000+0.11 EUR
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BZX84B5V6Q-7-F BZX84B5V6Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 5.6V 300MW SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP25810LQDFZ20-13 AP25810LQDFZ20-13 Diodes Incorporated AP25810LQ.pdf Description: USB POWER SWITCH W-QFN3040-20 T&
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.9V ~ 5.5V, 4.5V ~ 6.5V
Applications: USB, Type-C Controller
Current - Supply: 160µA, 360µA
Supplier Device Package: W-QFN3040-20 Type A1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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AP25810LQDFZ20-13 AP25810LQDFZ20-13 Diodes Incorporated AP25810LQ.pdf Description: USB POWER SWITCH W-QFN3040-20 T&
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.9V ~ 5.5V, 4.5V ~ 6.5V
Applications: USB, Type-C Controller
Current - Supply: 160µA, 360µA
Supplier Device Package: W-QFN3040-20 Type A1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5868 Stücke:
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9+2.48 EUR
12+1.8 EUR
25+1.63 EUR
100+1.44 EUR
250+1.36 EUR
500+1.31 EUR
1000+1.26 EUR
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DMMT3906W-7-F-79 Diodes Incorporated DMMT3906W.pdf Description: IC TRANSISTOR ARRAY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DMMT3906Q-7-F DMMT3906Q-7-F Diodes Incorporated ds30293.pdf Description: TRANS 2PNP 40V 200MA SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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15+1.44 EUR
24+0.89 EUR
29+0.75 EUR
50+0.65 EUR
100+0.57 EUR
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SBR10200CTB-13 SBR10200CTB-13 Diodes Incorporated Description: DIODE ARR SBR 200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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ZVN4206GTC ZVN4206GTC Diodes Incorporated ZVN4206G.pdf Description: MOSFET N-CH 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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4000+0.67 EUR
8000+0.63 EUR
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ZVN4206GTC ZVN4206GTC Diodes Incorporated ZVN4206G.pdf Description: MOSFET N-CH 60V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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13+1.69 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.81 EUR
2000+0.77 EUR
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DESD5V0S1BLP3-7 DESD5V0S1BLP3-7 Diodes Incorporated DESD5V0S1BLP3.pdf Description: TVS DIODE 5VWM 14.5VC X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 145W
Power Line Protection: No
Part Status: Active
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20000+0.067 EUR
30000+0.063 EUR
50000+0.06 EUR
70000+0.057 EUR
100000+0.055 EUR
250000+0.05 EUR
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DESD5V0S1BLP3-7 DESD5V0S1BLP3-7 Diodes Incorporated DESD5V0S1BLP3.pdf Description: TVS DIODE 5VWM 14.5VC X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 145W
Power Line Protection: No
Part Status: Active
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79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.095 EUR
5000+0.082 EUR
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DESD5V0X1BCSF-7 DESD5V0X1BCSF-7 Diodes Incorporated DESD5V0X1BCSF.pdf Description: TVS DIODE 5VWM 9VC X2DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Active
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41+0.52 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.14 EUR
2000+0.13 EUR
5000+0.12 EUR
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DESD5V0S2UAT-7 Diodes Incorporated Description: DIODE TVS LOW CAP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DESD5V0U1UT-7 Diodes Incorporated Description: DIODE TVS LOW CAP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DESD5V0S1UB-7 Diodes Incorporated Description: DIODE TVS LOW CAP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ZXTN649FTA ZXTN649FTA Diodes Incorporated ZXTN649F.pdf Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
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ZXTN649FTA ZXTN649FTA Diodes Incorporated ZXTN649F.pdf Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
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49+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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ZXTN19020CFFTA ZXTN19020CFFTA Diodes Incorporated ZXTN19020CFF.pdf Description: TRANS NPN 20V 7A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 175mV @ 280mA, 7A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23F
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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ZXTN19020CFFTA ZXTN19020CFFTA Diodes Incorporated ZXTN19020CFF.pdf Description: TRANS NPN 20V 7A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 175mV @ 280mA, 7A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23F
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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ZXTN19020DZTA ZXTN19020DZTA Diodes Incorporated ZXTN19020DZ.pdf Description: TRANS NPN 20V 7.5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 7.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2.4 W
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ZXTN19020DZTA ZXTN19020DZTA Diodes Incorporated ZXTN19020DZ.pdf Description: TRANS NPN 20V 7.5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 7.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2.4 W
Produkt ist nicht verfügbar
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ZXTN10150DZTA ZXTN10150DZTA Diodes Incorporated ZXTN10150DZ.pdf Description: TRANS NPN 150V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 250mV
Frequency - Transition: 135MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
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ZXTN10150DZTA ZXTN10150DZTA Diodes Incorporated ZXTN10150DZ.pdf Description: TRANS NPN 150V 1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 250mV
Frequency - Transition: 135MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
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PT7C4563BWEX PT7C4563BWEX Diodes Incorporated PT7C4563B.pdf Description: IC RTC CLK/CAL I2C 8SOIC TR 2.5K
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.65µA ~ 0.85µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
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PT7C4563BWEX PT7C4563BWEX Diodes Incorporated PT7C4563B.pdf Description: IC RTC CLK/CAL I2C 8SOIC TR 2.5K
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.65µA ~ 0.85µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
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B2100Q-13-F B2100Q-13-F Diodes Incorporated B270Q_B2100Q.pdf Description: DIODE SCHOTTKY 100V 2A SMB
Current - Reverse Leakage @ Vr: 7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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B2100Q-13-F B2100Q-13-F Diodes Incorporated B270Q_B2100Q.pdf Description: DIODE SCHOTTKY 100V 2A SMB
Current - Reverse Leakage @ Vr: 7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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SMCJ11CA-13-F SMCJ11CA-13-F Diodes Incorporated ds19003.pdf Description: TVS DIODE 11VWM 18.2VC SMC
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 11V
Current - Peak Pulse (10/1000µs): 82.4A
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ZXMN4A06KTC ZXMN4A06KTC Diodes Incorporated ZXMN4A06K.pdf Description: MOSFET N-CH 40V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 20 V
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ZXMN4A06KTC ZXMN4A06KTC Diodes Incorporated ZXMN4A06K.pdf Description: MOSFET N-CH 40V 7.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 20 V
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ZXMN2F30FHQTA ZXMN2F30FHQTA Diodes Incorporated Description: MOSFET N-CH 20V 4.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
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ZXMN2F30FHQTA ZXMN2F30FHQTA Diodes Incorporated Description: MOSFET N-CH 20V 4.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
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ZXMN3A14FQTA ZXMN3A14FQTA Diodes Incorporated ZXMN3A14FQ.pdf Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
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ZXMN3A14FQTA ZXMN3A14FQTA Diodes Incorporated ZXMN3A14FQ.pdf Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
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ZXMN3A02X8TA ZXMN3A02X8TA Diodes Incorporated ZXMN3A02X8.pdf Description: MOSFET N-CH 30V 5.3A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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ZXMN3A02X8TA ZXMN3A02X8TA Diodes Incorporated ZXMN3A02X8.pdf Description: MOSFET N-CH 30V 5.3A 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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ZXMN3G32DN8TA ZXMN3G32DN8TA Diodes Incorporated ZXMN3G32DN8.pdf Description: MOSFET 2N-CH 30V 5.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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ZXMN3G32DN8TA ZXMN3G32DN8TA Diodes Incorporated ZXMN3G32DN8.pdf Description: MOSFET 2N-CH 30V 5.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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ADTC144EUAQ-7 ADTC144EUAQ-7 Diodes Incorporated ADTC144EUAQ.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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ADTC144EUAQ-7 ADTC144EUAQ-7 Diodes Incorporated ADTC144EUAQ.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DMP3056LSSQ-13 DMP3056LSSQ-13 Diodes Incorporated DMP3056LSSQ.pdf Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1951 Stücke:
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25+1.05 EUR
50+0.93 EUR
100+0.82 EUR
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PI7C9X2G303ELBZXEX PI7C9X2G303ELBZXEX Diodes Incorporated PI7C9X2G303EL.pdf Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Tape & Reel (TR)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: JTAG
Applications: Wireless
Supplier Device Package: 136-aQFN (8x8)
Part Status: Active
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PI7C9X2G303ELBZXEX PI7C9X2G303ELBZXEX Diodes Incorporated PI7C9X2G303EL.pdf Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Cut Tape (CT)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: JTAG
Applications: Wireless
Supplier Device Package: 136-aQFN (8x8)
Part Status: Active
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DMPH6050SPD-13 DMPH6050SPD-13 Diodes Incorporated DMPH6050SPD.pdf Description: MOSFET 2P-CH 26A POWERDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
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DMPH6050SPD-13 DMPH6050SPD-13 Diodes Incorporated DMPH6050SPD.pdf Description: MOSFET 2P-CH 26A POWERDI5060-8
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMC3028LSDX-13 DMC3028LSDX-13 Diodes Incorporated DMC3028LSDX.pdf Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMC3028LSDX-13 DMC3028LSDX-13 Diodes Incorporated DMC3028LSDX.pdf Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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AP7351D-08FS4-7B Diodes Incorporated AP7351D.pdf Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.4V @ 150mA
Protection Features: Over Current
Qualification: AEC-Q100
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SBR40U100CT-G SBR40U100CT-G Diodes Incorporated SBR40U100CT.pdf Description: DIODE ARR SBR 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SBR40U100CT-2223 SBR40U100CT-2223 Diodes Incorporated Description: DIODE ARR SBR 100V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SBR40U100CT-01-2084 SBR40U100CT-01-2084 Diodes Incorporated Description: DIODE ARR SBR 100V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SBR40U100CT-01 SBR40U100CT-01 Diodes Incorporated Description: DIODE ARR SBR 100V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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BAS40-05-7-F-2477
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
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DMN2004WKQ-7 DMN2004WKQ.pdf
DMN2004WKQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 540MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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DMN2004WKQ-7 DMN2004WKQ.pdf
DMN2004WKQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 540MA SOT323
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Qualification: AEC-Q101
Grade: Automotive
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BAT54CTA-2477
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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PI6C557-06LE PI6C557-06.pdf
PI6C557-06LE
Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 200MHz
Input: HCSL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 2:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S1GB-13-F ds16003.pdf
S1GB-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S1GB-13-F ds16003.pdf
S1GB-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BZT585B5V6TQ-7 BZT585B5V1TQ-BZT585B43TQ.pdf
BZT585B5V6TQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 350MW SOD523
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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BZT585B5V6TQ-7 BZT585B5V1TQ-BZT585B43TQ.pdf
BZT585B5V6TQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 350MW SOD523
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
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BZX84B5V6Q-7-F BZX84Bxxx.pdf
BZX84B5V6Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 300MW SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
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AP25810LQDFZ20-13 AP25810LQ.pdf
AP25810LQDFZ20-13
Hersteller: Diodes Incorporated
Description: USB POWER SWITCH W-QFN3040-20 T&
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.9V ~ 5.5V, 4.5V ~ 6.5V
Applications: USB, Type-C Controller
Current - Supply: 160µA, 360µA
Supplier Device Package: W-QFN3040-20 Type A1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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AP25810LQDFZ20-13 AP25810LQ.pdf
AP25810LQDFZ20-13
Hersteller: Diodes Incorporated
Description: USB POWER SWITCH W-QFN3040-20 T&
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.9V ~ 5.5V, 4.5V ~ 6.5V
Applications: USB, Type-C Controller
Current - Supply: 160µA, 360µA
Supplier Device Package: W-QFN3040-20 Type A1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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DMMT3906W-7-F-79 DMMT3906W.pdf
Hersteller: Diodes Incorporated
Description: IC TRANSISTOR ARRAY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DMMT3906Q-7-F ds30293.pdf
DMMT3906Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 40V 200MA SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SBR10200CTB-13
SBR10200CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 200V 5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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ZVN4206GTC ZVN4206G.pdf
ZVN4206GTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.67 EUR
8000+0.63 EUR
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ZVN4206GTC ZVN4206G.pdf
ZVN4206GTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 31951 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
13+1.69 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.81 EUR
2000+0.77 EUR
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DESD5V0S1BLP3-7 DESD5V0S1BLP3.pdf
DESD5V0S1BLP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14.5VC X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 145W
Power Line Protection: No
Part Status: Active
auf Bestellung 520000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.074 EUR
20000+0.067 EUR
30000+0.063 EUR
50000+0.06 EUR
70000+0.057 EUR
100000+0.055 EUR
250000+0.05 EUR
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DESD5V0S1BLP3-7 DESD5V0S1BLP3.pdf
DESD5V0S1BLP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14.5VC X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 145W
Power Line Protection: No
Part Status: Active
auf Bestellung 522000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.095 EUR
5000+0.082 EUR
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DESD5V0X1BCSF-7 DESD5V0X1BCSF.pdf
DESD5V0X1BCSF-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 9VC X2DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Active
auf Bestellung 8979 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
41+0.52 EUR
100+0.25 EUR
500+0.21 EUR
1000+0.14 EUR
2000+0.13 EUR
5000+0.12 EUR
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DESD5V0S2UAT-7
Hersteller: Diodes Incorporated
Description: DIODE TVS LOW CAP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DESD5V0U1UT-7
Hersteller: Diodes Incorporated
Description: DIODE TVS LOW CAP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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DESD5V0S1UB-7
Hersteller: Diodes Incorporated
Description: DIODE TVS LOW CAP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ZXTN649FTA ZXTN649F.pdf
ZXTN649FTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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ZXTN649FTA ZXTN649F.pdf
ZXTN649FTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
auf Bestellung 6435 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
49+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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ZXTN19020CFFTA ZXTN19020CFF.pdf
ZXTN19020CFFTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 7A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 175mV @ 280mA, 7A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23F
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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ZXTN19020CFFTA ZXTN19020CFF.pdf
ZXTN19020CFFTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 7A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 175mV @ 280mA, 7A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23F
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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ZXTN19020DZTA ZXTN19020DZ.pdf
ZXTN19020DZTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 7.5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 7.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2.4 W
Produkt ist nicht verfügbar
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ZXTN19020DZTA ZXTN19020DZ.pdf
ZXTN19020DZTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 7.5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 7.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2.4 W
Produkt ist nicht verfügbar
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ZXTN10150DZTA ZXTN10150DZ.pdf
ZXTN10150DZTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 250mV
Frequency - Transition: 135MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
auf Bestellung 316000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.35 EUR
2000+0.31 EUR
5000+0.3 EUR
10000+0.27 EUR
50000+0.26 EUR
Mindestbestellmenge: 1000 Stücke
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ZXTN10150DZTA ZXTN10150DZ.pdf
ZXTN10150DZTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 250mV
Frequency - Transition: 135MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1.5 W
auf Bestellung 316190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
27+0.8 EUR
100+0.55 EUR
500+0.43 EUR
Mindestbestellmenge: 23 Stücke
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PT7C4563BWEX PT7C4563B.pdf
PT7C4563BWEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CAL I2C 8SOIC TR 2.5K
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.65µA ~ 0.85µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.7 EUR
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PT7C4563BWEX PT7C4563B.pdf
PT7C4563BWEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CAL I2C 8SOIC TR 2.5K
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.65µA ~ 0.85µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4522 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.65 EUR
15+1.46 EUR
25+1.39 EUR
100+1.14 EUR
250+1.07 EUR
500+0.94 EUR
1000+0.75 EUR
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B2100Q-13-F B270Q_B2100Q.pdf
B2100Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMB
Current - Reverse Leakage @ Vr: 7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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B2100Q-13-F B270Q_B2100Q.pdf
B2100Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMB
Current - Reverse Leakage @ Vr: 7 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
22+0.96 EUR
27+0.81 EUR
50+0.7 EUR
100+0.62 EUR
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SMCJ11CA-13-F ds19003.pdf
SMCJ11CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 11VWM 18.2VC SMC
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Bidirectional Channels: 1
Supplier Device Package: SMC
Voltage - Reverse Standoff (Typ): 11V
Current - Peak Pulse (10/1000µs): 82.4A
Produkt ist nicht verfügbar
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ZXMN4A06KTC ZXMN4A06K.pdf
ZXMN4A06KTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 20 V
Produkt ist nicht verfügbar
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ZXMN4A06KTC ZXMN4A06K.pdf
ZXMN4A06KTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 7.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 20 V
auf Bestellung 1796 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+2.59 EUR
100+1.76 EUR
500+1.4 EUR
1000+1.29 EUR
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ZXMN2F30FHQTA
ZXMN2F30FHQTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
Produkt ist nicht verfügbar
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ZXMN2F30FHQTA
ZXMN2F30FHQTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
29+0.73 EUR
100+0.5 EUR
500+0.37 EUR
1000+0.29 EUR
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ZXMN3A14FQTA ZXMN3A14FQ.pdf
ZXMN3A14FQTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Produkt ist nicht verfügbar
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ZXMN3A14FQTA ZXMN3A14FQ.pdf
ZXMN3A14FQTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 2975 Stücke:
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16+1.37 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.67 EUR
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ZXMN3A02X8TA ZXMN3A02X8.pdf
ZXMN3A02X8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+1.29 EUR
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ZXMN3A02X8TA ZXMN3A02X8.pdf
ZXMN3A02X8TA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-MSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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ZXMN3G32DN8TA ZXMN3G32DN8.pdf
ZXMN3G32DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 64000 Stücke:
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500+0.82 EUR
1000+0.75 EUR
1500+0.7 EUR
2500+0.67 EUR
3500+0.64 EUR
5000+0.62 EUR
12500+0.58 EUR
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ZXMN3G32DN8TA ZXMN3G32DN8.pdf
ZXMN3G32DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 64279 Stücke:
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9+2.53 EUR
14+1.59 EUR
100+1.05 EUR
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ADTC144EUAQ-7 ADTC144EUAQ.pdf
ADTC144EUAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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ADTC144EUAQ-7 ADTC144EUAQ.pdf
ADTC144EUAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 3509 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
67+0.31 EUR
81+0.26 EUR
94+0.23 EUR
108+0.19 EUR
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DMP3056LSSQ-13 DMP3056LSSQ.pdf
DMP3056LSSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1951 Stücke:
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11+2.01 EUR
17+1.25 EUR
25+1.05 EUR
50+0.93 EUR
100+0.82 EUR
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PI7C9X2G303ELBZXEX PI7C9X2G303EL.pdf
PI7C9X2G303ELBZXEX
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Tape & Reel (TR)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: JTAG
Applications: Wireless
Supplier Device Package: 136-aQFN (8x8)
Part Status: Active
Produkt ist nicht verfügbar
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PI7C9X2G303ELBZXEX PI7C9X2G303EL.pdf
PI7C9X2G303ELBZXEX
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Cut Tape (CT)
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: JTAG
Applications: Wireless
Supplier Device Package: 136-aQFN (8x8)
Part Status: Active
auf Bestellung 529 Stücke:
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AnzahlPrivatkunde
2+19.75 EUR
10+15.37 EUR
25+14.29 EUR
50+13.63 EUR
100+13.08 EUR
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DMPH6050SPD-13 DMPH6050SPD.pdf
DMPH6050SPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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DMPH6050SPD-13 DMPH6050SPD.pdf
DMPH6050SPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1826 Stücke:
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6+3.89 EUR
10+2.49 EUR
25+2.11 EUR
50+1.87 EUR
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DMC3028LSDX-13 DMC3028LSDX.pdf
DMC3028LSDX-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Produkt ist nicht verfügbar
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DMC3028LSDX-13 DMC3028LSDX.pdf
DMC3028LSDX-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2054 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
15+1.48 EUR
25+1.24 EUR
50+1.09 EUR
100+0.98 EUR
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AP7351D-08FS4-7B AP7351D.pdf
Hersteller: Diodes Incorporated
Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.4V @ 150mA
Protection Features: Over Current
Qualification: AEC-Q100
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
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10000+0.3 EUR
20000+0.27 EUR
50000+0.26 EUR
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SBR40U100CT-G SBR40U100CT.pdf
SBR40U100CT-G
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SBR40U100CT-2223
SBR40U100CT-2223
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SBR40U100CT-01-2084
SBR40U100CT-01-2084
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SBR40U100CT-01
SBR40U100CT-01
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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